TWI687549B - 用於高深寬比溝槽的均等鎢蝕刻 - Google Patents

用於高深寬比溝槽的均等鎢蝕刻 Download PDF

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TWI687549B
TWI687549B TW103141629A TW103141629A TWI687549B TW I687549 B TWI687549 B TW I687549B TW 103141629 A TW103141629 A TW 103141629A TW 103141629 A TW103141629 A TW 103141629A TW I687549 B TWI687549 B TW I687549B
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aspect ratio
tungsten
high aspect
fluorine
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王希坤
劉杰
王安川
英格爾尼汀Ｋ
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應用材料股份有限公司
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Abstract

在此描述從高深寬比溝槽均等地蝕刻鎢襯墊的方法。該等方法包括離子轟擊具有高深寬比溝槽的圖案化基板。離子轟擊包括含氟離子，且該離子轟擊可在破穿溝槽外側但接近溝槽開口處的水平襯墊部分之前停止。該等方法之後包括遠端電漿蝕刻，該遠端電漿蝕刻使用由含氟前驅物形成的電漿流出物。來自該遠端電漿的電漿流出物流進基板處理區域，在該基板處理區域，該等電漿流出物與鎢反應。該等電漿流出物與暴露的表面反應，且從溝槽外側及溝槽側壁上移除鎢。該等電漿流出物通過離子抑制元件，該離子抑制元件定位在遠端電漿與基板處理區域之間。

Description

用於高深寬比溝槽的均等鎢蝕刻 【針對相關申請案的交互參照】
此申請案主張美國非臨時申請案14/215,417號之優先權，該美國非臨時申請案於2014年3月17日提出申請，且主張美國臨時申請案61/917,433號之權益，該美國臨時申請案於2013年12月18日提出申請，前述美國申請案之發明名稱皆為「EVEN TUNGSTEN ETCH FOR HIGH ASPECT RATIO TRENCHES」且由Wang等人提出申請，該等美國申請案在此以其全文透過參考形式併入本文，以用於所有目的。
本發明之實施例關於從溝槽側壁均等地(evenly)蝕刻鎢。
藉由在基板表面上產生錯綜複雜的圖案化材料層之製程而能夠實現積體電路。在基板上產生圖案化材料需要受控的方法以移除暴露的材料。化學蝕刻用於各種目的，包括將光阻中的圖案轉移到下面的層、使層變薄，或使已存在於該表面上的特徵的側向尺寸變薄。經常，期望有一種蝕刻製 程會蝕刻一種材料比另一種材料還快，而助於例如圖案轉移製程進行。如此的蝕刻製程稱為對該第一材料具選擇性。作為材料、電路，與製程多樣化的結果，已開發出選擇性移除大範圍材料中的一或多者的蝕刻製程。
對於從半導體基板選擇性移除材料而言，經常期望有乾蝕刻製程。該期望是源自以極小的實體擾動而從極微結構溫和地移除材料的能力。乾蝕刻製程也容許藉由移除氣相試劑而使蝕刻速率突然停止。一些乾蝕刻製程涉及基板對遠端電漿副產物的暴露，該等遠端電漿副產物是由一或多個前驅物形成。舉例而言，當電漿流出物流進基板處理區域時，氨與三氟化氮的遠端電漿激發能使氧化矽選擇性地從圖案化基板移除。最近已開發遠端電漿蝕刻製程，以選擇性相對於彼此移除多種介電質。然而，幾乎未開發移除類似鎢之耐火金屬的乾蝕刻製程。
需要多種方法透過使用乾蝕刻製程而選擇性且均等地從圖案化基板蝕刻鎢。
在此描述從高深寬比溝槽均等地蝕刻鎢襯墊的方法。該等方法包括離子轟擊具有高深寬比溝槽的圖案化基板。離子轟擊包括含氟離子，且該離子轟擊可在破穿溝槽外側但接近溝槽開口處的水平襯墊部分之前停止。該等方法之後包括遠端電漿蝕刻，該遠端電漿蝕刻使用由含氟前驅物形成的電漿流出物。來自該遠端電漿的電漿流出物流進基板處理區域，在該基板處理區域，該等電漿流出物與鎢反應。該 等電漿流出物與暴露的表面反應，且從溝槽外側及溝槽側壁上移除鎢。該等電漿流出物通過離子抑制元件，該離子抑制元件定位在遠端電漿與基板處理區域之間。
多個實施例包括蝕刻鎢的方法。該等方法包括將圖案化基板移送至基板處理區域中。該圖案化基板具有鎢襯墊層，該鎢襯墊層塗布高深寬比溝槽，該高深寬比溝槽的深度是該高深寬比溝槽的寬度的超過五倍大。該等方法進一步包括將第一含氟前驅物流進該基板處理區域，同時施加偏壓電漿電力以用含氟離子轟擊該圖案化基板。該等方法進一步包括將第二含氟前驅物流進遠端電漿區域，該遠端電漿區域經由多孔板中的穿孔流體連通式(fluidly)耦接基板處理區域。該等方法進一步包括在該遠端電漿區域中形成遠端電漿，而從該第二含氟前驅物產生電漿流出物，以及將該等電漿流出物透過該等穿孔流進該基板處理區域。該等方法進一步包括蝕刻該鎢襯墊層。蝕刻該鎢襯墊層後，於該高深寬比溝槽的開口附近的該高深寬比溝槽的側壁上所測量到的該鎢襯墊層的頂部厚度是於該高深寬比溝槽的底部附近的該高深寬比溝槽的該側壁上所測量到的該鎢襯墊層的底部厚度的20%內。
多個實施例包括蝕刻鎢的方法。該等方法包括將圖案化基板移送至基板處理區域中。該圖案化基板具有鎢襯墊層，該鎢襯墊層塗布兩個相鄰的堆疊以及在該兩個相鄰的堆疊之間的高深寬比溝槽。該等方法進一步包括將第一含氟前驅物流進該基板處理區域，同時施加原地(local)電漿電力，該原地電漿電力將含氟離子朝該圖案化基板加速。該等方法 進一步包括將第二含氟前驅物流進遠端電漿區域，該遠端電漿區域經由多孔板中的多個穿孔而流體連通式耦接基板處理區域。該等方法進一步包括在該遠端電漿區域中形成遠端電漿，以從該第二含氟前驅物產生電漿流出物，且使該等電漿流出物透過該等穿孔流進該基板處理區域。該等方法進一步包括蝕刻該鎢襯墊層。蝕刻該鎢襯墊層減少該高深寬比溝槽的側壁上的該鎢襯墊層的厚度。
多個實施例包括蝕刻鎢的方法。該等方法包括將圖案化基板移送進入基板處理區域中。該圖案化基板具有鎢襯墊層，該鎢襯墊層塗布高深寬比溝槽，該高深寬比溝槽的深度是該高深寬溝槽的寬度的超過五倍大。該等方法進一步包括將含氟前驅物流進該基板處理區域，同時在穿孔板與基板基座之間以電容式施加原地電漿電力，而產生含氟離子且將該等含氟離子朝該圖案化基板加速，而該基板基座支撐該圖案化基板。該等方法進一步包括將三氟化氮流進遠端電漿區域，該遠端電漿區域經由該多孔板中的多個穿孔而流體連通式耦接基板處理區域。該等方法進一步包括在該遠端電漿區域中形成遠端電漿，以從該三氟化氮產生電漿流出物，且使該等電漿流出物透過該等穿孔流進該基板處理區域。該等方法進一步包括蝕刻該鎢襯墊層。蝕刻該鎢襯墊層之步驟以頂部速率減少該高深寬比溝槽的側壁上的該鎢襯墊層的厚度，該頂部速率在底部速率的20%內，該頂部速率是在接近該高深寬比溝槽的該側壁的最外側部分，而該底部速率是在接近該高深寬比溝槽的該側壁的最內側部分處。
額外的實施例與特徵部分地描述在以下說明中，且部分地對於此技術領域中具有通常知識者而言在參閱說明書後能清楚明瞭，或可藉由實施所揭露的實施例而習得。可藉由說明書中所描述的手段、組合和方法來瞭解並獲得該所揭露的實施例之特徵及優點。
100‧‧‧製程
110-145‧‧‧操作
200-1、200-2‧‧‧圖案化基板
210-1、210-2、210-3、210-4‧‧‧鎢襯墊
1001‧‧‧基板處理腔室
1010‧‧‧遠端電漿系統
1011‧‧‧氣體入口組件
1012‧‧‧第一通道
1013‧‧‧第二通道
1020‧‧‧腔室電漿區域
1021‧‧‧蓋
1024‧‧‧絕緣環
1026‧‧‧長度
1050‧‧‧通孔之最小直徑
1051‧‧‧中空空間
1053‧‧‧多孔隔板
1055‧‧‧小孔洞
1056‧‧‧通孔
1070‧‧‧基板處理區域
1101‧‧‧處理系統
1102‧‧‧FOUP
1104、1110‧‧‧機械手臂
1106‧‧‧固持區域
1108a-f‧‧‧處理腔室
1155‧‧‧氣體調動系統
1157‧‧‧系統控制器
透過參考本說明書的其餘部分與圖式，可實現對本案揭露實施例之本質與優點的進一步瞭解。
第1圖是根據多個實施例的鎢襯墊蝕刻製程的流程圖。
第2A圖至第2D圖是根據多個實施例的鎢蝕刻製程前與後的高深寬比溝槽上的鎢的剖面示意圖。
第3A圖顯示根據多個實施例的基板處理腔室。
第3B圖顯示根據多個實施例的基板處理腔室的噴淋頭。
第4圖顯示根據多個實施例的基板處理系統。
在所附圖示中，相似的部件及/或特徵可具有相同的元件符號。另外，相同類型的各種部件可藉由以下方式區別：將虛線和第二符號接在該元件符號之後，該第二符號用於區別該等類似的部件。如果說明書中僅使用第一元件符號，則該說明適用於具有相同第一元件符號之相似部件的任一者，無關於第二元件符號為何。
在此描述從高深寬比溝槽均等地蝕刻鎢襯墊的方 法。該等方法包括離子轟擊具有高深寬比溝槽的圖案化基板。離子轟擊包括含氟離子，且該離子轟擊可在破穿溝槽外側但接近溝槽開口處的水平襯墊部分之前停止。該等方法之後包括遠端電漿蝕刻，該遠端電漿蝕刻使用由含氟前驅物形成的電漿流出物。來自該遠端電漿的電漿流出物流進基板處理區域，在該基板處理區域，該等電漿流出物與鎢反應。該等電漿流出物與暴露的表面反應，且從溝槽外側及溝槽側壁上移除鎢。該等電漿流出物通過離子抑制元件，該離子抑制元件定位在遠端電漿與基板處理區域之間。
為了更佳地瞭解與認識本發明，現在請參考第1圖，第1圖是根據多個實施例的鎢襯墊(亦稱鎢襯墊層)蝕刻製程100之流程圖。在第一操作前，鎢襯墊形成於基板上。鎢襯墊可在多個特徵上呈現正形(conformal)，該等特徵存在於圖案化基板表面上。該等特徵包括高深寬比溝槽，該溝槽的深度超過該溝槽的寬度一倍數因子(multiplicative factor)，根據多個實施例，該倍數因子為5、10，或15。該圖案化基板之後被遞送至基板處理區域中(操作110)。另一實施例中，鎢襯墊可在將基板遞送到基板處理區域之後形成。
將三氟化氮流引入基板處理區域中(操作120)。將電漿電力供應至基板處理區域以形成原地電漿。該原地電漿可為感應耦合電漿或電容耦合電漿。任一情況中，供應偏壓電力以使由三氟化氮形成的含氟離子朝向該圖案化基板加速。可使用分開的電源以相對於圖案化基板偏壓感應耦合電漿。在電容耦合電漿的情況中，較佳實施例中，電容電漿電 力已相對於基板偏壓含氟離子。可使用其他的氟來源增大或置換三氟化氮。大體而言，可使含氟前驅物流進電漿區域，且含氟前驅物包括至少一種前驅物，該前驅物選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫，與二氟化氙所組成的群組。在操作125中，該圖案化基板被該等含氟離子轟擊(亦稱濺射)。
在較佳實施例中，隨後將三氟化氮流引入電漿區域，該電漿區域與該處理區域分開(操作130)。可使用其他的氟來源增大或置換三氟化氮。大體而言，含氟前驅物可流進電漿區域中，且該含氟前驅物包括至少一種前驅物，該前驅物選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫，與二氟化氙所組成的群組。在操作130中，也施加遠端電漿電力至遠端電漿區域以激發含氟前驅物(例如，三氟化氮)且形成電漿流出物。
對於本文所述的所有蝕刻製程而言，分開的電漿區域可稱為遠端電漿區域，且該分開的電漿區域可位在獨立於處理腔室的模組內，或者該分開的電漿區域可以是處理腔室內的隔間。該分開的電漿區域可藉由穿孔而流體連通式耦接基板處理區域，該等穿孔位於噴淋頭中，該噴淋頭配置在該兩個區域之間。方才所述之硬體也可用於本文所討論的所有製程中。遠端電漿區域在多個實施例中可以是電容耦合電漿區域，且遠端電漿區域可配置成在處理腔室的基板處理區域之遠端。舉例而言，電容耦合電漿區域(以及大體上該遠端電漿區域)可與基板處理區域透過噴淋頭而分開。
在遠端電漿區域中形成的電漿流出物隨後流入基板處理區域中(操作135)。基板上的鎢襯墊被均等地蝕刻(同樣在操作135中)，使得高深寬比溝槽的側壁上的鎢襯墊實質上均等地移除。從基板處理區域移除反應性化學物種與任何製程流出物，並且隨後從基板處理區域移除基板(操作145)。
在本文所述的每一原地電漿及/或遠端電漿中，進入遠端電漿區域的前驅物流可進一步包括一或多個相對惰性的氣體，諸如He、N2、Ar。惰氣可用於改善電漿穩定性、使電漿起始容易，且改善製程均勻性。作為添加物，氬有助於促進形成穩定電漿。當納入氦時，大體上製程均勻性增加。該等添加物存在於本說明書全文中的實施例中。可使用不同氣體的流速與比例以控制蝕刻速率與蝕刻選擇性。
下述流速應用至鎢襯墊蝕刻製程100的原地電漿部分(即操作120-125)或是鎢襯墊蝕刻製程的遠端電漿部分(即操作130-135)。原地電漿部分期間所用的前驅物可稱為第一含氟前驅物，且遠端電漿部分期間所用的前驅物可稱為第二含氟前驅物。根據多個實施例，第一含氟前驅物可與第二含氟前驅物相同。多個實施例中，含氟氣體(例如NF3)是以約25sccm(標準狀態下每分鐘的立方公分數)至400sccm之間的流速供應，氦是以約0slm(標準狀態下每分鐘的升數)至3slm之間的流速供應，且氬是以約0slm至3slm之間的流速供應。根據多個實施例，含氟前驅物可以下述的流速供應：約25sccm至約400sccm之間、約50sccm至約300sccm之 間、約75sccm至約200sccm之間，或較佳為約125sccm至約175sccm之間。
根據多個實施例，原地電漿電力(或偏壓電漿電力)可為電容式施加，且原地電漿電力可介於約10瓦至約2000瓦之間、介於約30瓦至約1500瓦之間、介於約100瓦至約1000瓦之間、介於約150瓦至約700瓦之間，或較佳為介於約200瓦至約500瓦之間。多個實施例中，原地電漿電力可介於約20瓦至約500瓦之間。可使用射頻(例如13.56MHz)施加原地電漿電力。多個實施例中，原地電漿電力或偏壓電漿電力的施加期間基板處理區域中的壓力可介於約0.01托耳至約5托耳之間、介於0.05托耳至約2托耳之間，或較佳為介於約0.1托耳至約1托耳之間。原地或偏壓電漿電力的施加期間，在多個實施例中，基板的溫度可介於約30℃至400℃之間、介於約40℃至約350℃之間、介於約60℃至約280℃之間、介於約80℃至約250℃之間，或較佳為介於約100℃至約160℃之間。
多個實施例中，形成該遠端電漿之操作發生在施加該偏壓電漿電力或原地電漿電力的操作之後。根據多個實施例，遠端電漿電力可為電容式施加，且遠端電漿電力可介於約10瓦至約2500瓦之間、介於約30瓦至約2000瓦之間、介於約100瓦至約1500瓦之間、介於約300瓦至約1000瓦之間，或介於約400瓦至約800瓦之間。多個實施例中，遠端電漿電力可大於50瓦。可使用射頻(例如13.56MHz)施加遠端電漿電力。根據多個實施例，在所有本文所述的鎢襯 墊蝕刻製程中，該製程的此部分期間，基板處理區域中的壓力大約與基板處理區域中的壓力相同。多個實施例中，在遠端電漿電力的施加期間，基板處理區域及/或遠端電漿區域中的壓力可介於約0.1托耳至約50托耳之間、介於約0.5托耳至約20托耳之間，或較佳為介於約1托耳至約10托耳之間。遠端電漿電力的施加期間，在多個實施例中，基板的溫度可介於約30℃至400℃之間、介於約40℃至約350℃之間、介於約60℃至約280℃之間、介於約80℃至約250℃之間，或較佳為介於約100℃至約160℃之間。根據多個實施例，在形成該遠端電漿的操作期間無原地電漿電力施加(或無偏壓電漿電力施加)。
在運用遠端電漿的實施例與操作中，可使用在示範性設備章節中所述的離子抑制器，以提供自由基及/或中性物種而選擇性蝕刻基板。離子抑制器也可稱為離子抑制元件。多個實施例中，舉例而言，離子抑制器用於過濾含氟電漿流出物以選擇性蝕刻鎢。該離子抑制器可納入本文所述之每一示範性製程中。透過使用電漿流出物，可達成鎢相對於各式各樣材料的蝕刻速率選擇性。
離子抑制器可用於提供自由基之濃度比離子高的反應性氣體。該離子抑制器作用為劇烈減少或實質上消除從電漿生成區域行進至基板的離子式帶電荷(ionically charged)物種。在離子抑制器之另側上的遠端電漿區域中的電漿激發期間，可使用朗繆爾(Langmuir)探針於基板處理區域中測量電子溫度。多個實施例中，電子溫度可低於0.5eV、低於 0.45eV、低於0.4eV，或較佳為低於0.35eV。該等電子溫度的極端低值是藉由噴淋頭及/或離子抑制器的存在而實現，該噴淋頭及/或離子抑制器定位在基板處理區域與遠端電漿區域之間。不帶電荷的中性與自由基物種可通過離子抑制器中的開口而在基板處反應。因為電漿之大多數帶電荷粒子被離子抑制器過濾或移除，所以基板不必然要在蝕刻製程期間偏壓。使用自由基與其他中性物種的此類製程相較於包括濺射與轟擊的習知電漿蝕刻製程可減少電漿傷害。離子抑制器助於將反應區域中離子物種的濃度控制在有助製程的層級。本發明之實施例也較習知濕式蝕刻製程有利，該濕式蝕刻製程中，液體的表面張力可能引發小特徵的彎折與剝落。
為了進一步認識發明，現在請參考第2A圖至第2D圖，第2A圖至第2D圖是根據多個實施例的鎢蝕刻製程前與後的高深寬比溝槽上的鎢的剖面示意圖。一開始，圖案化基板200-1有於第2A圖所示的高深寬比結構。於本文所述的蝕刻製程前，正形鎢襯墊210-1存在於高深寬比結構上。第2B圖至第2C圖顯示若僅執行鎢襯墊蝕刻製程100的數個部分時殘餘鎢的輪廓。第2B圖顯示圖案化基板200-1上執行僅使用操作130-135的蝕刻製程之後的鎢襯墊210-2的輪廓。操作130-135取決於形成鎢襯墊210-2的中性氟自由基與鎢襯墊210-1之化學反應。鎢襯墊210-2在接近高深寬比溝槽的開口處以較大的速率移除(相較於溝槽內深處的移除速率)，此舉是不受期望的。此觀察到的現象可能歸因於為了移除鎢而發生的化學反應之反應動力。第2C圖顯示僅使用操作 120-125的蝕刻製程後的鎢襯墊210-3的輪廓。操作120-125提供圖案化基板200-1的離子與物理性轟擊，已發現此轟擊也造成非期望地從溝槽之開口附近優先移除鎢。圖案化基板200-1可能甚至損失鎢襯墊210-1下方的一些材料(這是由於該製程的彈道性本質)而形成圖案化基板200-2。
第2D圖顯示完整的鎢襯墊蝕刻製程100之後的鎢襯墊210-4的輪廓。明顯地，在完整的鎢襯墊蝕刻100中鎢襯墊蝕刻製程100的原地電漿部分的經過時間相較於原地電漿製程(造成第2B圖中所繪的輪廓)較短。但是，轟擊的效應是為了增加鎢襯墊蝕刻製程100的遠端電漿部分的移除速率，以及為了使製程進行得更加均等。接近頂部(即接近溝槽開口)的移除速率幾乎匹配接近底部(即溝槽內深處)的移除速率。根據多個實施例，該製程可在溝槽任一側上的塔狀物(pylon)頂部上留下一些鎢，或是該等塔狀物之頂部上的鎢可移除(圖中未示)。鎢襯墊蝕刻製程的任一部分在單獨執行時，會造成接近溝槽開口附近有較高的移除速率，然而，以適當順序結合兩者製程，會造成溝槽側壁上下有期望的均等側壁移除速率。
第2A圖至第2D圖顯示圖案化基板200為一個均質材料。大體而言，高深寬比溝槽可形成於與基板其餘部分不同的材料之塔狀物之間。根據多個實施例，塔狀物本身可能實際上是以多層排列的多種材料的堆疊。甚至更大體而言，高深寬比溝槽可形成至基板中，如此則該等側壁毫不形成於塔狀物上，而是在挖掘至大塊基板本身中的溝槽之壁上。將 使用「基板」以指任何在鎢襯墊下方的物質，所以將包括大塊基板(例如矽晶圓)之表面上的沉積與圖案化層(當該等層存在時)。根據多個實施例，高深寬比溝槽形成於兩個塔狀物之間。多個實施例中，兩個相鄰堆疊的其中一者或二者可包括至少十個交替的介電層(例如氧化矽)與鎢。
高深寬比溝槽可具有各種尺寸。根據多個實施例，高深寬比溝槽的深度可超過該溝槽之寬度一倍數因子，該倍數因子為5、8、10，或15。根據多個實施例，高深寬比溝槽的深度可大於一微米、大於1.5μm，或大於2μm。多個實施例中，高深寬比溝槽的寬度可低於一百奈米、低於75nm、低於50nm，或低於30nm。
現在將描述鎢襯墊蝕刻製程100期間或之後的蝕刻效應。在蝕刻後，在該高深寬比溝槽之開口附近的該高深寬比溝槽的側壁上測量到的鎢襯墊層的頂部側壁厚度可在該高深寬比溝槽之底部附近的該高深寬比溝槽的側壁上測量到的鎢襯墊層的底部側壁厚度的20%之內。再一次，分別將底部界定為溝槽內較深處而將頂部界定為較靠近溝槽之開口處。底部側壁厚度可在溝槽深度(以線性且非以體積式測量)的底部10%內測量到。類似地，頂部側壁厚度可在溝槽深度的頂部10%內測量到。蝕刻該鎢襯墊層可在接近該高深寬比溝槽的側壁的最外部分處用頂部速率減少鎢襯墊層的厚度，該頂部速率是在該高深寬比溝槽的側壁的最內部分附近的底部速率的20%內。再度分別將最外部分界定為該溝槽深度的頂部10%，而最內部分界定為該溝槽深度的底部10%。
額外的製程參數揭露於描述示範性處理腔室和系統之過程中。
示範性處理系統
可實施本發明之實施例的處理腔室可納入諸如CENTURA®及PRODUCER®系統的處理平台內，該等系統可購自美國加州聖克拉拉(Santa Clara)的應用材料公司。
第3A圖是根據多個實施例之基板處理腔室1001。遠端電漿系統1010可處理含氟前驅物，隨後該含氟前驅物行進穿過氣體入口組件1011。在氣體入口組件1011內可見兩個截然不同的氣體供應通道。第一通道1012載送穿過遠端電漿系統(RPS)1010的氣體，而第二通道1013繞過遠端電漿系統1010。在多個實施例中，任一通道皆可用於含氟前驅物。另一方面，第一通道1012可用於製程氣體，而第二通道1013可用於處理氣體。圖中顯示蓋(或導電的頂部部分)1021以及多孔(perforated)隔板1053之間具有絕緣環1024，該絕緣環使得AC電位得以相對於多孔隔板1053而施加到蓋1021。AC電位在腔室電漿區域1020中點燃電漿。製程氣體可行進穿過第一通道1012進入腔室電漿區域1020，且製程氣體可在單獨腔室電漿區域1020中(或者，在腔室電漿區域1020中連同在遠端電漿系統1010中)由電漿激發。如果製程氣體(含氟前驅物)流過第二通道1013，隨後僅腔室電漿區域1020用於激發。腔室電漿區域1020及/或遠端電漿系統1010的結合在本文中可被稱為遠端電漿系統。多孔隔板(亦稱為噴淋頭)1053使噴淋頭1053下方的基板處理區域1070 與腔室電漿區域1020間隔開。噴淋頭1053使得電漿存在於腔室電漿區域1020中，以避免於基板處理區域1070中直接激發氣體，同時仍使得受激發的物種從腔室電漿區域1020行進至基板處理區域1070。
噴淋頭1053位於腔室電漿區域1020與基板處理區域1070之間，且噴淋頭1053使得電漿流出物(前驅物或其他氣體之受激發的衍生物)在遠端電漿系統1010及/或腔室電漿區域1020內生成，以穿過複數個橫切板厚的通孔1056。噴淋頭1053亦具有一或多個中空空間1051，該中空空間可被呈蒸氣或氣態之形式的前驅物(諸如含氟前驅物)填滿，並且穿過小孔洞1055進入基板處理區域1070，但不直接進入腔室電漿區域1020。在此實施例中，噴淋頭1053比通孔1056的最小直徑1050的長度還厚。為了維持從腔室電漿區域1020穿透至基板處理區域1070之受激發的物種的顯著濃度，透過形成通孔1056之較大的直徑部分且使該較大的直徑部分僅穿過噴淋頭1053的一部分(part way)，而可限制通孔之最小直徑1050的長度1026。在多個實施例中，通孔1056之最小直徑1050的長度可與通孔1056的最小直徑為相同量級，或者為較小的量級。
噴淋頭1053可設置成作為離子抑制器之用途，如第3A圖所示。或者，可納入分別的處理腔室元件(圖中未示)以抑制行進至基板處理區域1070中的離子濃度。無論是描述噴淋頭或離子抑制器，該物件可指具有穿孔的多孔板，該等穿孔使一些或實質上全部的電漿流出物通過且中和。蓋1021 與噴淋頭1053可分別作為第一電極與第二電極，使得蓋1021與噴淋頭1053可接收不同的電壓。該等設置方式中，可施加電力(例如射頻電力)至蓋1021、噴淋頭1053，或前述二者。例如，可施加電力至蓋1021，同時噴淋頭1053(作為離子抑制器)接地。基板處理系統可包括射頻生成器，該射頻生成器提供電力給蓋及/或噴淋頭1053。施加給蓋1021的電壓可有助腔室電漿區域1020內有均勻的電漿分佈(即，減少局部化的電漿)。為了使電漿形成在腔室電漿區域1020內，絕緣環1024可使蓋1021與噴淋頭1053電絕緣。絕緣環1024可由陶瓷製成，且絕緣環1024可具有高擊穿電壓以避免火花產生。基板處理腔室1001接近前述之電容耦合電漿部件的部分可進一步包括冷卻單元(圖中未示)，該冷卻單元包括一或多個冷卻流體通道，以用循環冷卻劑(例如，水)冷卻暴露至電漿的表面。
在所示的實施例中，一旦製程氣體受到腔室電漿區域1020中的電漿激發，噴淋頭1053可(透過通孔1056)分配製程氣體，該等製程氣體含有氟或該等製程氣體的電漿流出物。在多個實施例中，導入遠端電漿系統1010中及/或腔室電漿區域1020中的製程氣體可以含有氟(例如F2、NF3或XeF2)。製程氣體亦可包括載氣，諸如氦氣、氬氣、氮氣(N2)等。電漿流出物可包括製程氣體的離子化或中性的衍生物，且電漿流出物在此亦可稱為自由基氟，該自由基氟是指被導入的製程氣體之原子組分。
通孔1056設置成抑制離子式帶電荷的物種遷移出 腔室電漿區域1020，同時容許未帶電荷的中性或自由基物種通過噴淋頭1053進入基板處理區域1070。該等未帶電荷的物種可包括高度反應性物種，該等高度反應性物種透過通孔1056與較不具反應性的載氣一併輸送。如前文所註明，可減少離子物種透過通孔1056的遷移，且在一些例子中，離子物種透過通孔1056的遷移完全地受到抑制。控制通過噴淋頭1053的離子物種的量增加對被帶至與底下晶圓基板接觸的氣體混合物的控制，進而增加對氣體混合物的沉積及/或蝕刻特性的控制。例如，氣體混合物的離子濃度中的調整可改變蝕刻選擇性。
在多個實施例中，通孔1056的數量可以介於約60個至約2000個之間。通孔1056可具有多種的形狀，但最容易製成圓形。在多個實施例中，通孔1056的最小直徑1050可以介於約0.5毫米(mm)至約20mm之間，或介於約1mm至約6mm之間。在選擇通孔的截面形狀時，亦有範圍，通孔的截面形狀可被製成錐形、圓柱形或該二種形狀的組合。在不同的實施例中，用於將未激發前驅物導進基板處理區域1070的小孔洞1055的數量可以介於約100個至約5000個之間，或介於約500個至約2000個之間。小孔洞1055的直徑可以介於約0.1mm至約2mm之間。
通孔1056可設置成控制電漿活化氣體(即，離子性、自由基，及/或中性物種)經過噴淋頭1053的通過過程(passage)。例如，可控制孔洞的深寬比(即，孔洞直徑對長度之比)及/或孔洞的幾何形狀，使得減少通過噴淋頭1053 的活化氣體中的離子式帶電荷的物種的流動。噴淋頭1053中的通孔1056可包括漸縮部分與圓柱部分，該漸縮部分面向腔室電漿區域1020，該圓柱部分面向基板處理區域1070。圓柱部分可在比例與尺寸上設計成控制通過進入基板處理區域1070中的離子物種的流動。也可將可調整的電偏壓施加予以噴淋頭1053作為控制通過噴淋頭1053之離子物種流動的額外手段。
或者，通孔1056可具有朝向噴淋頭1054之頂部表面的較小內徑(ID)與朝向底部表面的較大ID。此外，通孔1056的底部邊緣可被切角(chamfer)，以當電漿流出物離開噴淋頭時協助將電漿流出物均勻地分佈在基板處理區域1070中，且促進電漿流出物與前驅物氣體之均勻分佈。較小的ID可位在沿著通孔1056的多個位置處，且較小的ID仍容許噴淋頭1053得以減少基板處理區域1070內的離子密度。離子密度的減少是由於進入基板處理區域1070前與壁的碰撞數增加所造成。每一次碰撞增加離子因從壁得電子或失電子而中和的可能性。大體而言，通孔1056的較小ID可介於約0.2mm至約20mm之間。其他實施例中，較小ID可介於約1mm至約6mm之間，或介於約0.2mm至約5mm之間。進一步而言，通孔1056的深寬比(即較小的ID對孔洞長度之比)可大約為1至20。通孔的較小ID可為沿著通孔長度上所見的最小ID。通孔1056的截面形狀可以是大體錐形、圓柱形或該二種形狀的組合。
第3B圖是根據多個實施例與處理腔室一併使用的 噴淋頭1053的底視圖。噴淋頭1053對應第3A圖中所示的噴淋頭。通孔1056被繪成在噴淋頭1053之底部上具有較大的內徑(ID)，而在頂部處具有較小的ID。小孔洞1055在噴淋頭之表面上實質上均勻分佈，甚至分佈在通孔1056之間，相較於在此描述的其他實施例，此種分佈助於提供更均勻的混合。
當含氟電漿流出物穿過噴淋頭1053中的通孔1056而抵達時，示範性圖案化的基板可在基板處理區域1070內由底座(圖中未示)支撐。根據多個實施例中，儘管可將基板處理區域1070裝配成支撐用於諸如固化之其他製程的電漿，然而在蝕刻圖案化的基板期間無電漿存在。
電漿既可在噴淋頭1053上方的腔室電漿區域1020中點燃，亦可在噴淋頭1053下方的基板處理區域1070點燃。電漿存在於腔室電漿區域1020中，以從含氟前驅物的流入中產生自由基氟。在處理腔室之導電頂部部分(蓋1021)與噴淋頭1053之間施加通常在射頻(RF)範圍的AC電壓，以在沉積期間在腔室電漿區域1020中點燃電漿。射頻電源供應器產生13.56MHz的高射頻頻率，但亦可產生單獨其他的頻率或者與13.56MHz頻率結合的頻率。
當開啟基板處理區域1070中的底部電漿以固化膜或清潔接壤基板處理區域1070的內部表面時，頂部電漿可處於低功率或無功率。基板處理區域1070中的電漿經由在噴淋頭1053與底座(或腔室之底部)之間施加AC電壓而點燃。清潔氣體可在電漿存在的同時被導入基板處理區域1070。
底座可具有熱交換通道，熱交換流體流過該熱交換通道以控制基板的溫度。此設置方式使得基板溫度得以冷卻或加熱，以維持相對低的溫度(從室溫直到約120℃)。熱交換流體可包含乙二醇和水。底座的晶圓支撐淺盤(較佳為鋁、陶瓷或前述材料之組合)亦可被電阻式加熱以達成相對高的溫度(從約120℃直到約1100℃)，此加熱是使用嵌入單迴圈之嵌入式加熱器元件，該元件設置成製造平行的同心圓形式的兩個完整匝。加熱器元件的外部可繞於鄰接支撐淺盤的周邊處，同時內部繞於具有較小半徑的同心圓的路徑上。接至加熱器元件的配線穿過底座的心柱。
腔室電漿區域或遠端電漿系統中的區域可稱為遠端電漿區域。在多個實施例中，自由基氟在遠端電漿區域中形成並且行進至基板處理區域中，在此處該自由基氟優先地蝕刻鎢。在多個實施例中，電漿電力基本上可僅被施加至遠端電漿區域，以確保自由基氟(可稱為電漿流出物)不會進一步於基板處理區域中激發。
在利用腔室電漿區域的實施例中，被激發的電漿流出物在與基板處理區域分隔的基板處理腔室的區段中生成。該基板處理區域是電漿流出物混合並且反應以蝕刻圖案化基板(例如半導體晶圓)之處。受激發的電漿流出物亦可伴隨惰氣(在該示範性實例中，該惰氣為氬氣)。在此可將基板處理區域描述為在蝕刻基板期間為「無電漿」。「無電漿」不必然意味著該區域缺乏電漿。在電漿區域內生成的相對低濃度的離子化物種與自由電子確實行進穿過隔件(噴淋頭/離子抑 制器)中的孔隙(口孔)，如此是由於通孔1056的形狀與尺寸所致。一些實施例中，在基板處理區域內基本上離子化物種與自由電子無濃度。腔室電漿區域中之電漿的邊界難以界定，且該電漿的邊界可能透過噴淋頭中的口孔侵入基板處理區域上。在感應耦合電漿的實例中，可直接在基板處理區域內執行少量的離子化。再者，低強度的電漿可在基板處理區域中生成，且不消滅形成的膜的期望特徵。在激發的電漿流出物之生成期間，電漿的強度離子密度遠比腔室電漿區域低(就此而言，或者是遠比遠端電漿區域低)的所有原因不背離在此所用的「無電漿」之範疇。
三氟化氮(或另一含氟前驅物)可以一速率流進腔室電漿區域1020，該速率在多個實施例中為約5sccm至約500sccm之間、約10sccm至約300sccm之間、約25sccm至約200sccm之間、約50sccm至約150sccm之間，或約75sccm至約125sccm之間。
進入腔室中的含氟前驅物之結合流速可佔總氣體混合物的0.05體積%至約20體積%；其餘為載氣。多個實施例中，含氟前驅物流進遠端電漿區域，但電漿流出物具有相同的體積流動比例。在含氟前驅物的情況中，可在彼等含氟氣體之前先啟動淨化氣體或載氣進入遠端電漿區域，以穩定遠端電漿區域內的壓力。
施加至遠端電漿區域的電漿功率可以是各種頻率或多重頻率的組合。在示範性處理系統中，由噴淋頭1053與蓋1021之間傳遞的射頻電力提供電漿。在一實施例中，使用電 容耦合電漿單元施加能量。在多個實施例中，當使用FrontierTM或類似系統時，遠端電漿源功率可為約100W至約3000W之間、約200W至約2500W之間，約300W至約2000W之間或約500W至約1500W之間。根據多個實施例，在示範性處理系統中所施加的射頻頻率可以是低於約200kHz的低射頻頻率、約10MHz至約15MHz之間的高射頻頻率，或大於1GHz或約1GHz的微波頻率。
在將載氣與電漿流出物流進基板處理區域1070期間，基板處理區域1070可被維持在各種壓力下。多個實施例中，該基板處理區域內的該壓力為約50Torr或更低、約30Torr或更低、約20Torr或更低、約10Torr或更低，或者是約5Torr或更低。根據多個實施例，該壓力可為約0.1Torr或更高、約0.2Torr或更高、約0.5Torr或更高，或約1Torr或更高。多個實施例中，壓力的下限可與壓力之上限結合。
在一或多個實施例中，基板處理腔室1001可被整合至各種多處理平台中，該等平台包括可購自美國加州聖克拉拉市的應用材料公司的ProducerTMGT、CenturaTMAP及EnduraTM平台。該處理平台能夠執行數種處理操作而不破真空。除了其他類型的腔室之外，可實施本發明之實施例的處理腔室可包括介電質蝕刻腔室或各種化學氣相沉積腔室。
沉積系統的實施例可併入至用於生產積體電路晶片的較大型製造系統。第4圖顯示根據多個實施例之一個沉積、烘烤及固化腔室之此類系統1101。在該圖中，一對FOUP(前開式晶圓盒)1102供應基板(例如300mm直徑的晶圓)，在 該等基板被放進晶圓處理腔室1108a-f之一者前，基板是由機械手臂1104接收並放置到低壓固持區域1106。第二機械手臂1110可用於從低壓固持區域1106傳輸基板晶圓至晶圓處理腔室1108a-f並且往回傳輸。每一晶圓處理腔室1108a-f可被裝備成執行多個基板處理操作，該等操作除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、脫氣、定向及其他基板製程之外，還包括本文所述的乾蝕刻製程。
晶圓處理腔室1108a-f可包括一或多個系統部件，以在基板晶圓上沉積、退火、固化及/或蝕刻可流動的介電膜。在一種設置方式中，兩對處理腔室(例如，1108c-d及1108e-f)可用於沉積介電材料於基板上，而第三對處理腔室(例如，1108a-b)可用於蝕刻沉積的介電質。在另一設置方式中，所有三對腔室(例如1108a-f)可設置成蝕刻基板上的介電膜。任一或多個所述的製程可在與多個實施例中所示的製造系統分開的腔室上執行。
基板處理系統受系統控制器控制。在示範性實施例中，系統控制器包括硬碟機、軟碟機及處理器。處理器含有單板電腦(SBC)、類比數位輸入/輸出板、介面板及步進馬達控制板。CVD系統的各部件皆符合Versa Modular European (VME)標準，該標準界定電路板、卡片機架(card cage)，以及連結器規格與類型。VME標準亦界定匯流排結構為具有16位元資料匯流排或24位元位址匯流排。
系統控制器1157用於控制馬達、閥、流量控制器、 電源供應器以及執行在此所述製程配方所需的其他功能。氣體調動系統1155也可由系統控制器1157控制，以將氣體導入晶圓處理腔室1108a-f的其中一個或全部。系統控制器1157可依賴來自光學感測器的反饋，以確定並調整氣體調動系統1155中及/或晶圓處理腔室1108a-f中的可移動的機械組件之位置。機械組件可包括機器人、節流閥及基座，該等組件在系統控制器1157之控制下經由馬達移動。
在示範性實施例中，系統控制器1157包括硬碟機(記憶體)、USB埠、軟碟機及處理器。系統控制器1157包括類比數位輸入/輸出板、介面板及步進馬達控制板。含有基板處理腔室1001的多重腔室處理系統1101之各部件由系統控制器1157控制。系統控制器執行系統控制軟體，該軟體以電腦程式之形式儲存在電腦可讀媒體上，該等媒體諸如硬碟、軟碟或快閃記憶體隨身碟。亦可使用其他種類的記憶體。電腦程式包括指令集，該等指令集指示時間、氣體之混合、腔室壓力、腔室溫度、射頻功率層級、基座位置及特定製程的其他參數。
可使用經由控制器執行的電腦程式產品實施用於在基板上蝕刻、沉積膜(或否則以其他方式處理膜)的製程或者用於清潔腔室的製程。電腦程式編碼可以任何習知的電腦可讀的程式語言來撰寫：例如68000組語、C、C++、Pascal、Fortran或其他的程式語言。使用習知的文件編輯器將適合的程式編碼編入單一檔案或多重檔案，並且將適合的程式編碼儲存於電腦可使用的媒體(如電腦的記憶體系統)或由該媒 體實施。如果編入的編碼內文是高階語言，則編譯編碼，且所得的編譯編碼隨後與預先編譯的Microsoft Windows®程式館常式之目標碼連結。為了執行該連結、編譯的目標碼，系統使用者援用該目標碼，使電腦系統載入記憶體中的編碼。CPU隨後讀取並且執行該編碼，以操作程式中辨識的任務。
使用者與控制器之間的介面可透過接觸感應顯示器，且該介面亦可包括滑鼠及鍵盤。在一個實施例中，使用兩個顯示器，一個安裝在無塵室壁以供操作者使用，另一個在壁後以供維修技術人員使用。兩個顯示器可同時顯示相同資訊，該此情況中，一次僅有一個顯示器被設置成接受輸入。為了選擇特定的螢幕或功能，操作者以手指或滑鼠接觸顯示器螢幕上的指定的區域。接觸區域改變該區域的強調色彩，或顯示新的選單或螢幕，確認操作者的選擇。
在此所使用的「基板」可為具有(或不具有)形成在上面的多個層的支撐基板。該圖案化基板可為有各種摻雜濃度及摻雜輪廓的絕緣體或半導體，且該圖案化基板例如可為用在積體電路製造上的類型的半導體基板。圖案化基板的暴露的「氮化矽」主要是Si3N4，但可包括低濃度的其他元素組份(諸如氧、氫、碳)。圖案化基板的暴露的「氧化矽」主要是SiO2，但可包括低濃度的其他元素組份(諸如氮、氫、碳)。在一些實施例中，使用本文所述之方法所蝕刻的氧化矽膜基本上由矽與氧構成。「氮化鈦」主要是鈦與氮，但可包括低濃度的其他元素組份(諸如氮、氫、碳)。氮化鈦可由鈦與氮構成。
術語「前驅物」是用於指任何參與反應從表面移除材料或沉積材料在表面上的製程氣體。「電漿流出物」是描述從腔室電漿區域離開並進入基板處理區域的氣體。電漿流出物是處於「激發態」，其中至少有一些氣體分子處於振動型式的激發、解離及/或離子化的狀態。「自由基前驅物」是用於描述參與反應從表面移除材料或沉積材料在表面上的電漿流出物(離開電漿而處於激發態的氣體)。「自由基氟」是含有氟但可含有其他元素組份的自由基前驅物。詞彙「惰氣」是指在蝕刻或被併入膜中時不形成化學鍵結的任何氣體。示範性的惰氣包括稀有氣體，但可包括其他氣體，只要當(一般而言)在膜中補捉到痕量的該氣體時不形成化學鍵結即可。
全文中所用之術語「間隙」(gap)與「溝槽」(trench)非暗指經蝕刻之幾何形狀具有大的水平尺度比(horizontal aspect ratio)。由表面上方來看，溝槽可顯現圓形、卵形、多邊形、矩形或各種其他形狀。溝槽可以呈現材料島狀物周圍的壕溝形狀。術語「介層窗」(via)用於指可或可不被金屬填充而形成垂直的電連接的低深寬比溝槽(由上方觀看)。如在此所用，正形蝕刻製程是指以與表面相同的形狀大體上均勻地移除表面上的材料，即經蝕刻之層的表面與蝕刻前的表面大體上平行。發明所屬技術領域中具有通常知識者將瞭解經蝕刻之介面可能不會100%正形，因此術語「大體上」容許可接受的容忍度。
已在此揭露數個實施例，發明所屬技術領域中具有通常知識者應知可使用各種修飾例、替代架構與等效例而不 會背離所揭露之實施例的精神。此外，為了避免不必要地混淆本發明，未描述多種習知的製程及元件。因此，上述說明不應被視為對本發明範疇之限制。
在提供一範圍之值之情況下，除非本文另有明確指定，應理解亦特定地揭露該範圍之上限與下限之間的每一中間值，精確度為至下限單位的十分位。也涵蓋在陳述範圍中之任一陳述值(或中間值)與在彼陳述範圍中之任一其他陳述值(或中間值)之間的每一較小範圍。該等較小範圍的上限值與下限值可獨立包含或排除於該範圍中，且其中在該較小範圍內包含任一個極限值、不含極限值或包含兩個極限值的各範圍皆被本發明涵蓋，除非在該陳述的範圍中有任何特別排除之極限。在所陳述之範圍包括極限值的一者或兩者之處，該範圍也包括該些排除其中任一者或兩者被包括的極限值的範圍。
在此與如後附申請專利範圍中所使用之單數形式「一」(a、an)與「該」(the)也包括複數個參考對象，除非本文中另外清楚指明。因此，舉例而言，所參考的「一種製程」(a process)包括複數個此類製程，而參考的「該介電材料」(the dielectric material)包括一或多種介電材料以及該領域中具有通常知識者所熟知的該等材料之等效例等。
又，在此說明書與下述申請專利範圍中所用的「包含」與「包括」等用語欲專指存在所陳述之特徵、整體、部件或步驟，但該等用語不排除存在或增加一或多種其他特徵、整體、部件、步驟、動作或群組。
100‧‧‧製程
110-145‧‧‧操作

Claims (14)

  1. 一種蝕刻鎢的方法，該方法包括以下步驟：將一圖案化基板移送至一基板處理區域中，其中該圖案化基板具有一鎢襯墊層，該鎢襯墊層塗布一高深寬比溝槽，該高深寬比溝槽的一深度是該高深寬比溝槽的一寬度的超過五倍大，其中該高深寬比溝槽配置在兩個相鄰堆疊之間，且該兩個相鄰的堆疊的其中一者或兩者包括至少10個交替的介電層與鎢層；將一第一含氟前驅物流進該基板處理區域，同時施加一偏壓電漿電力而以含氟離子轟擊該圖案化基板；將一第二含氟前驅物流進一遠端電漿區域，該遠端電漿區域經由一多孔板中的多個穿孔而流體連通式(fluidly)耦接一基板處理區域；在該遠端電漿區域中形成一遠端電漿，以從該第二含氟前驅物產生電漿流出物，且使該等電漿流出物透過該等穿孔流進該基板處理區域；及蝕刻該鎢襯墊層，其中，在蝕刻該鎢襯墊層後，於該高深寬比溝槽的開口附近的該高深寬比溝槽的一側壁上所測量到的該鎢襯墊層的一頂部側壁厚度是於該高深寬比溝槽的底部附近的該高深寬比溝槽的該側壁上所測量到的該鎢襯墊層的一底部側壁厚度的20%內。
  2. 如請求項1所述之方法，其中該高深寬比溝槽的該深度大於一微米。
  3. 如請求項1所述之方法，其中該高深寬比溝槽的該寬度少於100奈米。
  4. 如請求項1所述之方法，其中該形成該遠端電漿之操作是發生在施加一偏壓電漿電力之該操作後。
  5. 如請求項1所述之方法，其中在形成該遠端電漿之該操作期間，不施加偏壓電漿電力。
  6. 如請求項1所述之方法，其中該偏壓電漿電力介於20瓦至500瓦之間。
  7. 如請求項1所述之方法，其中該遠端電漿是藉由下述方式形成：電容式施加大於50瓦的一遠端電漿電力至該遠端電漿區域。
  8. 如請求項1所述之方法，其中該第一含氟前驅物包括至少一種前驅物，該前驅物選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫，與二氟化氙所組成的群組。
  9. 如請求項1所述之方法，其中該圖案化基板的一溫度在蝕刻該鎢襯墊層之該操作期間為介於30℃至400℃之間。
  10. 一種蝕刻鎢的方法，該方法包括以下步驟：將一圖案化基板移送至一基板處理區域中，其中該圖案化基板具有一鎢襯墊層，該鎢襯墊層塗布兩個相鄰的堆疊以及在該兩個相鄰的堆疊之間的一高深寬比溝槽，且其中該兩個相鄰的堆疊的其中一者或兩者包括至少10個交替的介電層與鎢層；將一第一含氟前驅物流進該基板處理區域，同時施加一原地(local)電漿電力，該原地電漿電力將含氟離子朝該圖案化基板加速；將一第二含氟前驅物流進一遠端電漿區域，該遠端電漿區域經由一多孔板中的多個穿孔而流體連通式耦接一基板處理區域；在該遠端電漿區域中形成一遠端電漿，以從該第二含氟前驅物產生電漿流出物，且使該等電漿流出物透過該等穿孔流進該基板處理區域；及蝕刻該鎢襯墊層，其中蝕刻該鎢襯墊層之步驟減少該高深寬比溝槽的一側壁上的該鎢襯墊層的一厚度。
  11. 如請求項10所述之方法，其中該第一含氟前驅物與該第二含氟前驅物相同。
  12. 如請求項10所述之方法，其中蝕刻該鎢襯墊層之步驟以一頂部速率減少該鎢襯墊層的一厚度，該頂部速率在一底部 速率的20%內，該頂部速率是在接近該高深寬比溝槽的該側壁的最外側部分處，而該底部速率是在接近該高深寬比溝槽的該側壁的最內側部分處。
  13. 如請求項10所述之方法，其中該第二含氟前驅物是三氟化氮。
  14. 一種蝕刻鎢的方法，該方法包括下述步驟：將一圖案化基板移送進入一基板處理區域中，其中該圖案化基板具有一鎢襯墊層，該鎢襯墊層塗布一高深寬比溝槽，該高深寬比溝槽的一深度是該高深寬溝槽的一寬度的超過五倍大，其中該高深寬比溝槽配置在兩個相鄰堆疊之間，且該兩個相鄰的堆疊的其中一者或兩者包括至少10個交替的介電層與鎢層；將一含氟前驅物流進該基板處理區域，同時在一穿孔板與一基板基座之間以電容式施加原地電漿電力，而產生含氟離子且將該等含氟離子朝該圖案化基板加速，而該基板基座支撐該圖案化基板；將三氟化氮流進一遠端電漿區域，該遠端電漿區域經由該多孔板中的多個穿孔而流體連通式耦接一基板處理區域；在該遠端電漿區域中形成一遠端電漿，以從該三氟化氮產生電漿流出物，且使該等電漿流出物透過該等穿孔流進該基板處理區域；及蝕刻該鎢襯墊層，其中蝕刻該鎢襯墊層之步驟以一頂部 速率減少該高深寬比溝槽的一側壁上的該鎢襯墊層的一厚度，該頂部速率在一底部速率的20%內，該頂部速率是在接近該高深寬比溝槽的該側壁的最外側部分處，而該底部速率是在接近該高深寬比溝槽的該側壁的最內側部分處。
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