JPS591671A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS591671A
JPS591671A JP57090678A JP9067882A JPS591671A JP S591671 A JPS591671 A JP S591671A JP 57090678 A JP57090678 A JP 57090678A JP 9067882 A JP9067882 A JP 9067882A JP S591671 A JPS591671 A JP S591671A
Authority
JP
Japan
Prior art keywords
chamber
gas
film
pipe
plasma cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57090678A
Other languages
English (en)
Inventor
Yoshimi Shiotani
喜美 塩谷
Mamoru Maeda
守 前田
Yasushi Ooyama
泰 大山
Mikio Takagi
幹夫 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57090678A priority Critical patent/JPS591671A/ja
Priority to DE8383302990T priority patent/DE3375028D1/de
Priority to EP83302990A priority patent/EP0095887B2/en
Publication of JPS591671A publication Critical patent/JPS591671A/ja
Priority to US06/740,306 priority patent/US4625678A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （ａ）発明の技術分野 本発明は集積回路基板にパターン形成用のシリサイド膜
又は金属膜を生成させるプラズマＣＶＤ装置〆ｔに係り
、特に高融点の塩化系無機化合物である例えばモリブデ
ンシリサイド（ＭｏＳｉｔ）、塩化モリブデン（Ｍｏｃ
ｔ、）又は塩化タングステン（Ｗ　ｃ　Ｌの）等をプラ
ズマ化して分解反応を容易にし、イオン。
ラジカル、分解物を該起させて成膜するのに有効となる
プラズマＣＶＤ装置の改良に関する。
（ｂ）　　技術の背景 集積回路の回路構成に用いられる一般的な配線材料はア
ルミニウム（Ａ　Ｌ’）またはシリコン（Ｓｔ）とアル
ミニウムの合金であり、アルミニウム膜は抵抗値が小さ
く、シリコン酸化膜等に対して接着性及び加工性に優れ
ている反面耐湿性に劣り、マイグレーション（ｅｌｅｃ
ｔｒｏｍｌｇｒａｔｉｏｎ）を起し易く、シリコンと共
融点を持つため接触面に共晶合金を作り、シリコン層に
深いピットを生ずる。
とれに対し低温プラズマにより、高融点のシリサイド膜
又は高融点金属のモリブデン（ＭＯ）又はタングステン
（Ｗ）等を成膜させるイオンプレーテングが近年用いら
れている０ イオンプレーテングは嘆厚の成長速度が大きく、良質の
結晶膜を低温で形成する利点があるが気相での化学反応
を利用するため形成した薄膜の性質は、どのような反応
を用いたかということと共に基板温度、ガス成分や流量
、反応装置冷の形状、反応系の清浄度などに大きく依存
する。
（ｃ）　　従来技術と問題点 集積回路基板上に、ゲート電極、配Ｎ材に使用するシリ
サイド又は金属膜形成に有利な低温プラズマＣＶＤ装置
が多用されている。
第１図は従来のプラズマＣＶＤ装置を示す構成図である
。
図中１はチャンバ、２は高周波電極、３はサセプタ、４
は集積回路基板（ウェハ）ｆ５はガス誘導管、６はガス
導出口、７は排気口、８はシールド。
９はジャバラ、１０は加熱用被覆、１１はヒータをそれ
ぞれ示す。
チャンバ１内に高周波電源が印加される高周波電極２に
サセプタ３を介してウェハ４をｄｌｌして回転する高周
波電極系と化合物ガスを供給するガス誘導管５及びガス
導出口６からなる電極系を設は高周波電圧を二極間に印
加してプラズマを時起させ、導入する化合物ガスのイオ
ン化を促進させ、ガス反応によりウェハ４上に所定のシ
リサイド又は金属膜を生成させる。
チャンバ１内は減圧するだめの真空ポンプ（図示せず）
により排気ロア、７′を介して一定圧に維持される。ま
た成膜速度を加速させ、良質な膜質を得るガス誘導管５
を支持するステンレス材のジャバラ９を設は電極間隔を
調整可能とし、チャンバ１と気密性を保持するためのシ
ールド８で半固定される。ガス誘導管５の経路には図の
ように加熱用被覆１０を備える。これは温度降下によっ
て化合物ガスが固体化するのを防止するためのもので室
温で固体化合物となる化合物ガス例えば塩化モリブデン
、塩化タングステンを媒体とする場合は特に必要でステ
ンレスパイプを１５０℃に加熱するヒータ系を内蔵させ
て被覆する。
これに対しガス組成が異なり、室温で液体化合物となる
化合物ガス即ち弗化系無機化合物である例えば弗化モリ
ブデン（ＭｏＦａ）又は弗化タングステン（ＷＦ６）は
室温で気化するから化合物ガス誘導系は加熱の必要はな
く誘導系は容易に得られる反面、分離する弗素によりト
ラブルを生ずる。即ち下地基板が例えばシリコン又は二
酸化シリコンで形成される場合、弗素によシエッチング
されるためシリサイドや金属膜が成長しＫ〈い又ははが
れ易いというトラブルを生ずる。
これに対し接着強度を保ち良質の膜質が得られ、室温で
固体化合物をなす塩化系化合物ガスでは前述のガス導入
系を加熱する配慮が必要で液化温度は１５０℃に維持さ
れることが望ましい。
室温で固体化合物となる化合物ガスは一定温度１５０℃
の恒温槽よシガス導入管５を紅白してチャンバ１内に導
入されるが、高温に保つために加熱用被覆で保温し約１
５０℃に維持されるが、チャンバ１内に導入される部分
は急冷され固体化するためガス誘導管５の内壁に固体化
したガス蒸発物が付着し管内がつまる現象を生ずる。
このため化合物ガス流量が変動し、ウェハ４への膜質を
低下させ、接着強度を劣化させる。また装置の修復に時
間がか＼り稼動率を低下させる。
（ｄ）　　発明の目的 本発明は上記の欠点に鑑み、チャンバ導入口周辺及びチ
ャンバ内部の誘導管及び導出口に加熱機構を設け、導入
管に付着する化合物ガスの固体化を防止することを目的
とする。
（ｅ）　　発明の構成 上記目的は本発明によれば、チャンバ内にガス誘導管を
介して化合物ガスを導入し、該化合物ガスをプラズマ化
して試料上に被膜を形成する装置であって、該ガス誘導
管近傍に加熱機構を設けることによって達せられる。
（ｒ）　　発明の実施例 以下本発明の実施例を図面によシ詳述する。
第２図は本発明の一実施例であるプラズマＣＶＤ装置を
示す構成図である。
チャンバ２１内に導入されるガス誘導管２２及ａより送
風して内部を循環させ排出口２４ｂより排出させること
により室温で固体化合物をなす高融点の化合物ガスを１
５０℃前後に加熱すると、従来のように急激な温度降下
はなくなり化合物ガスの固体化は防止でき蒸発物の管内
付着は防止できる。媒体をなすモリブデンシリサイド（
Ｍｏｕｌｔ）、タングステンシリサイド（ＷＳｉｌ）等
の高融点メタル、及び塩化系無機化合物の化合物ガスの
流量は一定量に規定できるため安定した膜質が得られる
。
また同時に導入される還元ガス（キャリアガス）である
水素も一定量に規定できる。
シリサイド膜又は金禰膜を成膜するプロセスは従来通り
であり、高周波電極系の電極２５にサセプタ２６を介し
てウェハ２７を載置し回転させるとともに高周波電圧を
印加する。他の電極系にはガス導入管２２及びガス導出
口２３をジャバラ３０の伸縮により所定位置に上下移動
させ二電極間を固定する。
高周波電極系には高周波′電圧を印加し、一方の電極に
はシリサイド膜又は金属膜形成用の化合物ガスを導入き
せる。
例えばモリブデン金属膜を成膜させるためには塩化モリ
ブデン（Ｍｏｃｔ、１）を高温で気化蒸発させ還元用の
水素を同時に導入する。印加した高周波電源により二電
極間にプラズマを発生させ、分解反応を容易にしイオン
、ラジカル等を誘起させ、ウェハ２７上にモリブデン金
Ｈ４１１Ｋを成膜させる。
第３図は本発明の一実施例である耐熱性加熱容器の外形
を示す斜視図である。
耐熱性加熱容器２４の構造は周辺縁２８を空洞とする円
筒と円形底板２９からなり中央にはガス誘導管と密着す
る貫通孔を設けたもので、円筒部はガス導入管に、底板
２９はガス非出口に接する構造としたものである。この
ような構造の加熱機構を設けることにより化合物ガスの
固体化を防止する。本発明の実施例として温風循環させ
る加熱機構としたがガス誘導管近傍に加熱ヒータを設け
ても同様の効果が期待できる。
（ｇ）　　廃明の効果 以上詳細に説明したように本発明の加熱機構を設けるこ
とによシチャンバ内におけるガス誘導管に蒸発物質が固
体化するのを防止でき集積回路基板に安定した良質のシ
リサイド膜、金属膜生成が可能となる優れた効果がある
。
【図面の簡単な説明】
第１図は従来のプラズマＣＶＤ装置を示す構成図、第２
図は本発明の一実施例を示すプラズマＣＶＤ装置を示す
構成図、第３図は本発明の一実施例である耐熱性加熱容
器の外形を示す斜視図である。 図において、２１はチャンバ、２２はガス誘導管、２３
はガス導出口、２４は耐熱性加熱容器。 ２５は高周波電極、２６はサセプタ、２７はウェハ、２
８は周辺縁、２９は円形底版、３０はジャバラを示す。 第ｊ図

Claims (1)

    【特許請求の範囲】
  1. チャンバ内にガス誘導管を介して化合物ガスを導入し、
    該化合物ガスをプラズマ化して試料上に被膜を形成する
    装置であって、該ガス誘導管近傍に加熱機構を設けてな
    ることを特徴とするプラズマＣＶＤ装置。
JP57090678A 1982-05-28 1982-05-28 プラズマｃｖｄ装置 Pending JPS591671A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57090678A JPS591671A (ja) 1982-05-28 1982-05-28 プラズマｃｖｄ装置
DE8383302990T DE3375028D1 (en) 1982-05-28 1983-05-24 Apparatus for plasma chemical vapour deposition
EP83302990A EP0095887B2 (en) 1982-05-28 1983-05-24 Apparatus for plasma chemical vapour deposition
US06/740,306 US4625678A (en) 1982-05-28 1985-06-03 Apparatus for plasma chemical vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090678A JPS591671A (ja) 1982-05-28 1982-05-28 プラズマｃｖｄ装置

Publications (1)

Publication Number Publication Date
JPS591671A true JPS591671A (ja) 1984-01-07

Family

ID=14005190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090678A Pending JPS591671A (ja) 1982-05-28 1982-05-28 プラズマｃｖｄ装置

Country Status (4)

Country Link
US (1) US4625678A (ja)
EP (1) EP0095887B2 (ja)
JP (1) JPS591671A (ja)
DE (1) DE3375028D1 (ja)

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JP2020528491A (ja) * 2017-06-21 2020-09-24 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 基板処理装置および方法

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EP0095887B1 (en) 1987-12-23
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US4625678A (en) 1986-12-02

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