JPS4834798A - - Google Patents

Info

Publication number
JPS4834798A
JPS4834798A JP46068658A JP6865871A JPS4834798A JP S4834798 A JPS4834798 A JP S4834798A JP 46068658 A JP46068658 A JP 46068658A JP 6865871 A JP6865871 A JP 6865871A JP S4834798 A JPS4834798 A JP S4834798A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46068658A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46068658A priority Critical patent/JPS4834798A/ja
Priority to US285379A priority patent/US3893876A/en
Publication of JPS4834798A publication Critical patent/JPS4834798A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP46068658A 1971-09-06 1971-09-06 Pending JPS4834798A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP46068658A JPS4834798A (ja) 1971-09-06 1971-09-06
US285379A US3893876A (en) 1971-09-06 1972-08-31 Method and apparatus of the continuous preparation of epitaxial layers of semiconducting III-V compounds from vapor phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46068658A JPS4834798A (ja) 1971-09-06 1971-09-06

Publications (1)

Publication Number Publication Date
JPS4834798A true JPS4834798A (ja) 1973-05-22

Family

ID=13380006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46068658A Pending JPS4834798A (ja) 1971-09-06 1971-09-06

Country Status (2)

Country Link
US (1) US3893876A (ja)
JP (1) JPS4834798A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
JPS57193025A (en) * 1981-05-25 1982-11-27 Semiconductor Energy Lab Co Ltd Manufacture of film
JPS59128299A (ja) * 1983-01-10 1984-07-24 Nec Corp 燐化アルミニウム・インジウム単結晶の製造方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010045A (en) * 1973-12-13 1977-03-01 Ruehrwein Robert A Process for production of III-V compound crystals
JPS5814644B2 (ja) * 1975-05-14 1983-03-22 松下電器産業株式会社 ヒカリデンソウロノセイゾウホウホウ
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
FR2356271A1 (fr) * 1976-02-06 1978-01-20 Labo Electronique Physique Croissance acceleree en phase vapeur
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
JPS584811B2 (ja) * 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
US4256052A (en) * 1979-10-02 1981-03-17 Rca Corp. Temperature gradient means in reactor tube of vapor deposition apparatus
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
US4479455A (en) * 1983-03-14 1984-10-30 Energy Conversion Devices, Inc. Process gas introduction and channeling system to produce a profiled semiconductor layer
JPS61275191A (ja) * 1985-05-29 1986-12-05 Furukawa Electric Co Ltd:The ＧａＡｓ薄膜の気相成長法
US4699675A (en) * 1985-12-26 1987-10-13 Rca Corporation Vapor phase growth of III-V materials
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US6537613B1 (en) 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
WO2002013245A1 (en) * 2000-08-04 2002-02-14 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2853970A (en) * 1956-03-09 1958-09-30 Ohio Commw Eng Co Continuous gas plating apparatus under vacuum seal
US2877138A (en) * 1956-05-18 1959-03-10 Ind Rayon Corp Method of heating a filament to produce a metal coating in a decomposable gas plating process
NL262949A (ja) * 1960-04-02 1900-01-01
US3314393A (en) * 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
US3441454A (en) * 1965-10-29 1969-04-29 Westinghouse Electric Corp Method of fabricating a semiconductor by diffusion
US3441453A (en) * 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
US3572286A (en) * 1967-10-09 1971-03-23 Texaco Inc Controlled heating of filaments
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
JPS57193025A (en) * 1981-05-25 1982-11-27 Semiconductor Energy Lab Co Ltd Manufacture of film
JPS59128299A (ja) * 1983-01-10 1984-07-24 Nec Corp 燐化アルミニウム・インジウム単結晶の製造方法
JPH0369879B2 (ja) * 1983-01-10 1991-11-05 Nippon Electric Co

Also Published As

Publication number Publication date
US3893876A (en) 1975-07-08

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