JP2020528491A - 基板処理装置および方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000012530 fluid Substances 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims description 60
- 230000008602 contraction Effects 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 7
- 239000002470 thermal conductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000012713 reactive precursor Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- B01J3/02—Feed or outlet devices therefor
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- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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Abstract
Description
密閉圧力容器と、
密閉圧力容器の壁に取り付けられた流体インレットアセンブリであって、壁を通過する流体インレットパイプを有する流体インレットアセンブリと、
を備える基板処理装置が提供され、この装置は、
流体インレットパイプを壁に結合する、インレットパイプの周りの流体インレットアセンブリ中の弾性要素をさらに備え、この弾性要素の内表面および外表面の一方は圧力容器内に行き渡る圧力を受け、他方は周囲圧力を受け、内側で運ばれる流体が弾性要素と接触するのを流体インレットパイプが防止する。
密閉圧力容器に、密閉圧力容器の壁に取り付けられた流体インレットアセンブリであって、壁を通過する流体インレットパイプを有する流体インレットアセンブリと、流体インレットパイプを壁に結合する、インレットパイプの周りの流体インレットアセンブリ中の弾性要素とを設けることを含む方法が提供され、この弾性要素の内表面および外表面の一方は圧力容器内に行き渡る圧力を受け、他方は周囲圧力を受け、内側で運ばれる流体が弾性要素と接触するのを流体インレットパイプが防止し、この方法は、
弾性要素の収縮を通じてインレットパイプに対する機械的圧力を生じさせることをさらに含み、機械的圧力の方向は圧力容器内部へ向かう。
Claims (17)
- 密閉圧力容器と、
前記密閉圧力容器の壁に取り付けられた流体インレットアセンブリであって、前記壁を通過する流体インレットパイプを有する前記流体インレットアセンブリと、
を備える基板処理装置であって、
前記流体インレットパイプを前記壁に結合する、前記インレットパイプの周りの前記流体インレットアセンブリ中の弾性要素をさらに備え、前記弾性要素の内表面および外表面の一方は前記圧力容器内に行き渡る圧力を受け、他方は周囲圧力を受け、内側で運ばれる流体が前記弾性要素と接触するのを前記流体インレットパイプが防止する、
基板処理装置。 - 前記弾性要素は、前記装置またはアセンブリの固定部品の間の変位の下で変形するように構成される、請求項1に記載の装置。
- 前記密閉圧力容器は、密閉された反応チャンバである内側チャンバを囲む外側チャンバを形成する、請求項1または2に記載の装置。
- 前記弾性要素は、前記インレットパイプに対する機械的圧力を生じさせるように構成される、請求項1〜3のいずれか一項に記載の装置。
- 前記機械的圧力の方向は、前記反応チャンバに向かって、内向きである、請求項4に記載の装置。
- 前記インレットパイプは、内側で互いに摺動するように配置された2つのパイプから形成される、請求項1〜5のいずれか一項に記載の装置。
- 前記反応チャンバは、前記インレットパイプをその位置にロックするカラーを備える、請求項6に記載の装置。
- 前記インレットパイプは、前記インレットパイプの少なくとも一部分を、前記装置の内部を通って内側へ取り外すことによって分解されるように配置される、請求項1〜7のいずれか一項に記載の装置。
- 前記インレットパイプは、前記インレットパイプの少なくとも一部分を、前記装置から離れるように向く方向に外側へ取り外すことによって分解されるように配置される、請求項1〜7のいずれか一項に記載の装置。
- 前記インレットパイプは、反応チャンバ壁に対して定位置にあるように配置される、請求項1〜9のいずれか一項に記載の装置。
- 前記インレットパイプは、反応チャンバ壁に対して回転可能な位置にあるように配置される、請求項1〜10のいずれか一項に記載の装置。
- 前記インレットパイプは、前記インレットパイプに沿って熱を分配するための熱分配要素が装備される、請求項1〜11のいずれか一項に記載の装置。
- 前記熱分配要素は、前記密閉圧力容器の前記壁のフィードスルー箇所を越えて延びる、請求項12に記載の装置。
- 前記インレットパイプが前記反応チャンバと接する接触箇所は、非永続的な固定箇所である、請求項3に記載の装置。
- 前記接触箇所は、密閉および/または補強されている、請求項14に記載の装置。
- 基板処理装置における方法であって、
密閉圧力容器に、前記密閉圧力容器の壁に取り付けられた流体インレットアセンブリであって、前記壁を通過する流体インレットパイプを有する前記流体インレットアセンブリと、前記流体インレットパイプを前記壁に結合する、前記インレットパイプの周りの前記流体インレットアセンブリ中の弾性要素とを設けることを含み、前記弾性要素の内表面および外表面の一方は前記圧力容器内に行き渡る圧力を受け、他方は周囲圧力を受け、内側で運ばれる流体が前記弾性要素と接触するのを前記流体インレットパイプが防止し、前記方法は、
前記弾性要素の収縮を通じて前記インレットパイプに対する機械的圧力を生じさせることをさらに含み、前記機械的圧力の方向は、前記圧力容器内部へ向かう、
方法。 - 前記機械的圧力は、前記圧力容器内に行き渡る前記圧力と前記周囲圧力との間の圧力差によって生じる、請求項16に記載の方法。
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FI128855B (en) | 2019-09-24 | 2021-01-29 | Picosun Oy | FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS |
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TW201905232A (zh) | 2019-02-01 |
US20230090809A1 (en) | 2023-03-23 |
JP7177099B2 (ja) | 2022-11-22 |
US20210189560A1 (en) | 2021-06-24 |
KR20200020783A (ko) | 2020-02-26 |
KR102580523B1 (ko) | 2023-09-20 |
JP2023017951A (ja) | 2023-02-07 |
EP3642386B1 (en) | 2024-04-03 |
KR20230133948A (ko) | 2023-09-19 |
EP3642386A4 (en) | 2020-07-08 |
WO2018234611A1 (en) | 2018-12-27 |
US11505864B2 (en) | 2022-11-22 |
EP3642386A1 (en) | 2020-04-29 |
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EP3642386C0 (en) | 2024-04-03 |
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