JP2007537602A - フルオロカーボン化学エッチングにおけるh2添加物を使用しての炭素ドープ酸化ケイ素エッチング - Google Patents
フルオロカーボン化学エッチングにおけるh2添加物を使用しての炭素ドープ酸化ケイ素エッチング Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 338
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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Abstract
Description
本発明の実施形態は水素を含む化学エッチングを利用するものであり、なかでも、望ましいエッチングプロファイルを実現しながらも、フォトレジスト層への選択性を向上させ、エッチングプロファイルのマイクロローディングやエッチング速度のマイクロローディングを最低限にする又は排除することが可能である。
エッチング構造体が、誘電層のエッチングに使用する化学反応と同一の反応でエッチング可能なARC層を有する場合、単一エッチング工程が使用し得る。同一の化学反応でエッチング可能なARC層の一例は、記載のDUO ARCである。図3の構造体300は、誘電体をエッチングするために使用したものと同一の化学反応でエッチング可能なARCを含み得る。
本発明の実施形態の一例は、水素つまりH2、テトラフルオロメタンつまりCF4、窒素つまりN2、アルゴンつまりArを含有する混合ガスを用いてトレンチ構造をエッチングすることを含む。
トレンチをエッチングする本発明の別の実施形態は、H2、CF4、N2、Arを含有する混合ガスでトレンチ構造をエッチングすることを含む。本例で得られるエッチング構造体は図6の断面図に示される。
単一の化学反応では効果的に及び/又は効率よくエッチングできない実施形態に関しては、方法200に追加エッチング工程を追加することが可能である。こういった効果的及び/又は効率的でないエッチングには、単一の化学反応では全層を貫通してのエッチングが許容限度を越える長時間となる場合及び/又はエッチングの質が許容限度を越えて低い場合が含まれる。エッチング構造体が別の化学エッチングでエッチングする必要があるARCを有する実施形態の場合、方法200は、図2Iに示されるように、ARC層のエッチング工程220を含み得る。このエッチング工程220は、貫通エッチング、ARC開口エッチング、ARCエッチング、キャップエッチングその他であることが考えられる。
バイアをエッチングするための本発明の実施形態の一例は、H2、CF4、オクタフルオロシクロブタンつまりC4F8、N2及びArを含有する混合ガスを用いた構造体のエッチングを含む。
バイアをエッチングするための本発明の実施形態の別例は、H2、CF4、C4F8、CH2F2、N2及びArを含有する混合ガスを用いた構造体のエッチングを含む。この例の結果が図9に示されている。
本発明の実施形態の一例は、H2、CF4、C4F8、ジフルオロメタンつまりCH2F2、N2及びArを含有する混合ガスでバイア構造をエッチングすることを含む。本例で得られるエッチング構造体は図10の断面図に示される。
本発明のその他の実施形態と比較して、エッチング法の一部の実施形態では、エッチング中に低減した又は低い流量の水素を用いる。エッチング中の水素ガス流量を低減することにより、エッチングプロファイルはより綺麗に形成され、フォトレジストはより保持され、ストライエーションや速いエッチング等による損傷が低下する。
本発明のエッチング実施形態の一例においては、H2、CF4、N2、Arを含有する混合ガスを使用するが、その他の例で示したものと比較して、水素ガス流量は低い。本例により得られるエッチングしたトレンチは、図11の断面図に示される。
本発明の実施形態の別例において、バイアは誘電層を低流量水素混合ガスでエッチングする多段階エッチング処理によってエッチングされる。低流量水素とは、その他の実施例で記載した高い水素流量と比較してのものである。本例によって得られるエッチングしたバイアが、図13の断面図に示される。
本発明の実施形態の追加例は、多段階エッチング処理によってバイアをエッチングすることを含み、誘電層は低流量水素混合ガスを用いてエッチングされる。本例において、バイアス電力は2MHzバイアス50%と13.56MHzバイアス50%との組み合わせである。低流量水素とは、その他の例で示した高い水素流量と比較してのものである。本例で得られるエッチングしたバイアは、図14の断面図に示される。
本発明の実施形態において、水素添加剤は、炭化水素及び水素高含有ガス等の様々な水素含有添加剤のいずれでも代用可能である。特定の実施形態において、水素含有ガスはCH4、C2H4、NH3、H2O及び/又はシランガスを含む。
本発明の実施形態の別例において、バイアは多段階エッチング処理によってエッチングされ、誘電層は炭化水素を含む混合ガスによってエッチングされる。本例によって得られるエッチングしたバイアは図15の断面図に示される。
Claims (52)
- (a)チャンバへの低k誘電性材料の供給と、
(b)水素非含有フルオロカーボンを含む第1ガスと、水素を含む第2ガスと、窒素を含む第3ガスとを含む混合ガスのチャンバ内への適用と、
(c)混合ガスを用いたプラズマの発生と、
(d)低k誘電性材料のエッチングとを含むエッチング方法。 - 低k誘電性材料が約4.0未満の誘電率を有する誘電性材料を含む請求項1に記載のエッチング方法。
- 低k誘電性材料が約3.1〜約2の誘電率を有する誘電性材料を含む請求項1に記載のエッチング方法。
- 低k誘電性材料が約2.2〜約2の誘電率を有する誘電性材料を含む請求項1に記載のエッチング方法。
- 低k誘電性材料が炭素ドープ酸化ケイ素を含む請求項1に記載のエッチング方法。
- 第1ガスがエッチャントガスであり、第2ガスが非エッチャントガスである請求項1に記載のエッチング方法。
- 混合ガスにおける非エッチャントガスのエッチャントガスに対するガス比が約0.6〜約5.0である請求項6に記載のエッチング方法。
- 混合ガスにおける非エッチャントガスのエッチャントガスに対するガス比が約1.0〜約2.5である請求項6に記載のエッチング方法。
- 第1ガスの水素非含有フルオロカーボンがCxFyを含み、x≧1でありy≧1である請求項1に記載のエッチング方法。
- 第1ガスの水素非含有フルオロカーボンが、(1)CF4、(2)C2F2、(3)C2F4、(4)C3F6、(5)C4F6、(6)C4F8、(7)C5F8、(8)C6F6の少なくとも1つを含む請求項1に記載のエッチング方法。
- 第2ガスが(1)二原子水素、(2)炭化水素、(3)シラン、(4)フッ素非含有水素ガスの少なくとも1つを含む請求項1に記載のエッチング方法。
- 第2ガスが(1)H2、(2)CH4、(3)C2H4、(4)NH3、(5)H2Oの少なくとも1つを含む請求項1に記載のエッチング方法。
- 第2ガスがH2を含む請求項1に記載のエッチング方法。
- 第3ガスがN2を含む請求項1に記載のエッチング方法。
- 混合ガスがハイドロフルオロカーボンガスをさらに含む請求項1に記載のエッチング方法。
- ハイドロフルオロカーボンガスがCxHyFzをさらに含み、x≧1、y≧1、z≧1である請求項15に記載のエッチング方法。
- ハイドロフルオロカーボンガスが、(1)C2HF5、(2)CHF3、(3)CH2F2、(4)CH3F、(5)C3H2F6、(6)C3H2F4、(7)C3HF5、(8)C3HF7の少なくとも1つを含む請求項15に記載のエッチング方法。
- 混合ガスの適用が、混合ガスを圧力約5mTorr〜約400mTorrで適用することを含む請求項1に記載のエッチング方法。
- 混合ガスの適用が、混合ガスを圧力約5mTorr〜約30mTorrで適用することをさらに含む請求項1に記載のエッチング方法。
- プラズマの発生が、プラズマを少なくとも2つのバイアス周波数で発生させることを含む請求項1に記載のエッチング方法。
- プラズマの発生が、プラズマを(1)実質的に2MHz、又は(2)実質的に13.56MHzの少なくとも1つのバイアス周波数で発生させることをさらに含む請求項1に記載のエッチング方法。
- 混合ガスが酸素非含有混合ガスを含む請求項1に記載のエッチング方法。
- 混合ガスが不活性ガスをさらに含む請求項1に記載のエッチング方法。
- 混合ガスが一酸化炭素ガスをさらに含む請求項1に記載のエッチング方法。
- (a)約3.7未満の誘電率を有する誘電性材料のチャンバへの供給と、
(b)水素非含有フルオロカーボン含有エッチャントガスと、水素含有非エッチャントガスと、窒素含有ガスと、不活性ガスとを含む混合ガスのチャンバ内への適用と、
(c)混合ガスを用いたプラズマの発生と、
(d)誘電性材料のエッチングによるフィーチャの少なくとも一部の形成とを含むチャンバにおけるフィーチャを形成するためのプラズマエッチング方法。 - 誘電率が約3.1〜約2である請求項25に記載のプラズマエッチング方法。
- 誘電性材料が炭素ドープ酸化ケイ素を含む請求項25に記載のプラズマエッチング方法。
- 混合ガスにおける非エッチャントガスのエッチャントガスに対するガス比が約0.6〜約2.7である請求項25に記載のプラズマエッチング方法。
- 混合ガスがハイドロフルオロカーボン含有エッチャントガスをさらに含む請求項25のプラズマエッチング方法。
- 混合ガスにおける非エッチャントガスのエッチャントガスに対するガス比が約0.55〜約2.1である請求項29に記載のプラズマエッチング方法。
- 混合ガスにおける非エッチャントガスのエッチャントガスに対するガス比が約1.1である請求項29に記載のプラズマエッチング方法。
- 水素非含有フルオロカーボン含有エッチャントガスが、(1)CF4、(2)C2F2、(3)C2F4、(4)C3F6、(5)C4F6、(6)C4F8、(7)C5F8、(8)C6F6の少なくとも1つである請求項25に記載のプラズマエッチング方法。
- ハイドロフルオロカーボン含有エッチャントガスが、(1)C2HF5、(2)CHF3、(3)CH2F2、(4)CH3F、(5)C3H2F6、(6)C3H2F4、(7)C3HF5、(8)C3HF7の少なくとも1つである請求項29に記載のプラズマエッチング方法。
- 水素含有非エッチャントガスが、(1)H2、(2)CH4、(3)C2H4、(4)NH3、(5)H2Oの少なくとも1つである請求項25に記載のプラズマエッチング方法。
- 窒素含有ガスがN2である請求項25に記載のプラズマエッチング方法。
- 不活性ガスが、(1)He、(2)Ne、(3)Kr、(4)Xe、(5)Arの少なくとも1つを含む請求項25に記載のプラズマエッチング方法。
- チャンバ内への混合ガスの適用が、混合ガスを圧力約5mTorr〜約30mTorrでチャンバ内に適用することをさらに含む請求項25に記載のプラズマエッチング方法。
- プラズマの発生が、プラズマを(1)実質的に2MHz、(2)実質的に13.56MHz、又は(2)実質的に162MHzの少なくとも1つのバイアス周波数で発生させることをさらに含む請求項25に記載のプラズマエッチング方法。
- 混合ガスが酸素非含有混合ガスを含む請求項25に記載のプラズマエッチング方法。
- 水素含有非エッチャントガスの流量が約10sccm〜約250sccmである請求項25に記載のプラズマエッチング方法。
- 水素含有非エッチャントガスの流量が約10sccm〜約75sccmである請求項25に記載のプラズマエッチング方法。
- 水素非含有フルオロカーボン含有エッチャントガスの流量が約20sccm〜約200sccmである請求項25に記載のプラズマエッチング方法。
- ハイドロフルオロカーボン含有エッチャントガスの流量が約20sccm〜約200sccmである請求項29に記載のプラズマエッチング方法。
- 水素非含有フルオロカーボン含有エッチャントガス及びハイドロフルオロカーボン含有エッチャントガスの総流量が約10sccm〜約200sccmである請求項29に記載のプラズマエッチング方法。
- 窒素含有ガスの流量が約0sccm〜約200sccmである請求項25に記載のプラズマエッチング方法。
- 不活性ガスの流量が約0sccm〜約800sccmである請求項25に記載のプラズマエッチング方法。
- プラズマの発生が、プラズマを約0ワット〜約2000ワットの電源電力で発生させることを含む請求項25に記載のプラズマエッチング方法。
- プラズマの発生がプラズマを約0ワット〜約200ワットの電源電力で発生させることを含む請求項25に記載のプラズマエッチング方法。
- プラズマの発生がプラズマを約300ワット〜約3000ワットのバイアス電力で発生させることを含む請求項25に記載のプラズマエッチング方法。
- プラズマの発生が、プラズマを約5x109電子/cm3〜約5x1011電子/cm3の電子密度で発生させることを含む請求項25に記載のプラズマエッチング方法。
- プラズマの発生がプラズマを約5x1010電子/cm3より高い電子密度で発生させることを含む請求項25に記載のプラズマエッチング方法。
- (a)低k誘電層と、低k誘電層上の第1パターンフォトレジスト層とを有する半導体ウェハの供給と、
(b)水素非含有フルオロカーボン含有エッチャントガスと、水素含有非エッチャントガスと、窒素含有ガスと、不活性ガスとを含む第1混合ガスの適用と、
(c)低k誘電層のエッチングによる半導体ウェハへの第1フィーチャの形成と、
(d)第1フォトレジスト層の剥離と、
(e)ARC層の半導体ウェハ上への堆積と、
(f)ARC層のエッチングと、
(g)半導体ウェハ上への、第2フィーチャを形成する第2パターンフォトレジスト層の適用と、
(h)水素非含有フルオロカーボン含有エッチャントガスと、水素含有非エッチャントガスと、窒素含有ガスと、不活性ガスとを含む第2混合ガスの適用と、
(i)低k誘電層とARC層とのエッチングによる半導体ウェハへの第2フィーチャの形成とを含むダマシンエッチング方法。
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JP2016178222A (ja) * | 2015-03-20 | 2016-10-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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JP2022520190A (ja) * | 2019-02-08 | 2022-03-29 | アプライド マテリアルズ インコーポレイテッド | 半導体構造をエッチングするための方法及び装置 |
JP7259061B2 (ja) | 2019-02-08 | 2023-04-17 | アプライド マテリアルズ インコーポレイテッド | 半導体構造をエッチングするための方法及び装置 |
CN113366603B (zh) * | 2019-02-08 | 2024-05-31 | 应用材料公司 | 蚀刻半导体结构的方法和设备 |
JP2021106228A (ja) * | 2019-12-26 | 2021-07-26 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
JP7403314B2 (ja) | 2019-12-26 | 2023-12-22 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
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CN101124661A (zh) | 2008-02-13 |
US20050266691A1 (en) | 2005-12-01 |
KR20070009729A (ko) | 2007-01-18 |
WO2005112092A3 (en) | 2007-05-18 |
TW200601459A (en) | 2006-01-01 |
WO2005112092A2 (en) | 2005-11-24 |
TWI279861B (en) | 2007-04-21 |
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