TWI541890B - 選擇性抑制含有矽及氧兩者之材料的乾式蝕刻速率 - Google Patents
選擇性抑制含有矽及氧兩者之材料的乾式蝕刻速率 Download PDFInfo
- Publication number
- TWI541890B TWI541890B TW101128647A TW101128647A TWI541890B TW I541890 B TWI541890 B TW I541890B TW 101128647 A TW101128647 A TW 101128647A TW 101128647 A TW101128647 A TW 101128647A TW I541890 B TWI541890 B TW I541890B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- etching
- region
- patterned substrate
- oxygen
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 69
- 229910052760 oxygen Inorganic materials 0.000 title claims description 46
- 239000001301 oxygen Substances 0.000 title claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 45
- 229910052710 silicon Inorganic materials 0.000 title description 3
- 239000010703 silicon Substances 0.000 title description 3
- 230000001629 suppression Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 147
- 238000012545 processing Methods 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 94
- 239000002243 precursor Substances 0.000 claims description 66
- 238000005530 etching Methods 0.000 claims description 44
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 43
- 229910052731 fluorine Inorganic materials 0.000 claims description 41
- 239000011737 fluorine Substances 0.000 claims description 41
- 239000001257 hydrogen Substances 0.000 claims description 30
- 229910052739 hydrogen Inorganic materials 0.000 claims description 30
- 229910052732 germanium Inorganic materials 0.000 claims description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 25
- 239000006227 byproduct Substances 0.000 claims description 25
- 239000007787 solid Substances 0.000 claims description 24
- 230000001681 protective effect Effects 0.000 claims description 21
- 238000001312 dry etching Methods 0.000 claims description 19
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052707 ruthenium Inorganic materials 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 12
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000003574 free electron Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical compound [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 claims description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims 1
- MJOFSLWOGOBDQN-UHFFFAOYSA-N [O].[Ge] Chemical compound [O].[Ge] MJOFSLWOGOBDQN-UHFFFAOYSA-N 0.000 claims 1
- 150000001721 carbon Chemical class 0.000 claims 1
- 150000002483 hydrogen compounds Chemical class 0.000 claims 1
- 230000008569 process Effects 0.000 description 52
- 239000007789 gas Substances 0.000 description 48
- 239000012071 phase Substances 0.000 description 25
- 150000002500 ions Chemical class 0.000 description 23
- 150000003254 radicals Chemical class 0.000 description 16
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000151 deposition Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 7
- 229910052684 Cerium Inorganic materials 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004590 computer program Methods 0.000 description 4
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ROLJWXCAVGNMAK-UHFFFAOYSA-N [Ce]=O Chemical compound [Ce]=O ROLJWXCAVGNMAK-UHFFFAOYSA-N 0.000 description 1
- SPPCMVNDPDQNRG-UHFFFAOYSA-L [F-].[F-].[Sb++] Chemical compound [F-].[F-].[Sb++] SPPCMVNDPDQNRG-UHFFFAOYSA-L 0.000 description 1
- IQEHMXGOAXVOAA-UHFFFAOYSA-N [N].[Rh] Chemical compound [N].[Rh] IQEHMXGOAXVOAA-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- UZBMLWGAEQOROI-UHFFFAOYSA-L difluororuthenium Chemical compound F[Ru]F UZBMLWGAEQOROI-UHFFFAOYSA-L 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Description
此申請案主張美國臨時申請案61/527,823之權益,該申請案於2011年8月26日提出,發明名稱為「SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN」,該申請案以全文形式在此併入,以供所有目的之用。
本發明是關於半導體處理技術。
藉由在基板表面上產生錯綜複雜圖案化的材料層之製程,可製做積體電路。在基板上產生圖案化材料需要受控的方法以移除暴露的材料。化學蝕刻被用於各種目的,包括將光阻中的圖案轉移進入下方層中、薄化層或薄化已經存在於表面上的特徵結構之側向尺寸。通常,期望具有蝕刻一種材料比另一種快的蝕刻製程,以助於例如圖案轉移製程進行。此類蝕刻製程可說是對第一材料有選擇性。材料、電路與製程多樣化的結果是,蝕刻製程已被開發成具有對多種材料的選擇性。然而,僅有少數選項能選擇地以比蝕刻氧化矽更快的速度來蝕刻
矽。
就選擇地移除半導體基板上的材料而言,通常期望使用乾式蝕刻製程。乾式蝕刻製程受到期望的原因是源自於在最小化物理干擾的情況下,從微型結構溫和地移除材料的能力。藉由移除氣相試劑,乾式蝕刻製程也容許蝕刻速率突然停止。某些乾式蝕刻製程會使基板暴露於由一或多種前驅物所形成之遠端電漿副產物。舉例而言,當電漿流出物流入基板處理區域時,氨及三氟化氮的遠端電漿激發能自經圖案化基板選擇地移除氧化矽。最近,已經在發展比移除氧化矽更快的速度而可移除矽的乾式蝕刻製程,然而,某些應用可能需要更多的選擇性。
因此,需要就使用乾式蝕刻製程相對於氧化矽及含有矽與氧的其他物質來改良矽的選擇性的方法。
茲描述一種在圖案化異質結構上抑制對暴露的含矽與氧材料之蝕刻速率的方法,且該方法包括兩階段遠端電漿蝕刻。使用本文之技術增加選擇性的材料之範例包括氮化矽及矽。遠端電漿蝕刻的第一階段將電漿流出物與圖案化異質結構反應,以在含矽與氧材料上形成保護性固態副產物。第一階段的電漿流出物由結合前驅物的遠端電漿形成,包括含氮前驅物及含氫前驅物。遠端電漿
蝕刻的第二階段亦將電漿流出物與圖案化異質結構反應,以選擇性地移除缺乏保護性固態副產物的材料。第二階段的電漿流出物由含氟前驅物的遠端電漿形成。
本發明的實施例包括一種在基板處理腔室的基板處理區域中蝕刻圖案化基板的方法。圖案化基板具有暴露的含矽與氧區域及第二材料的暴露的區域,該第二材料具有與暴露的含矽與氧區域不同的化學計量。蝕刻圖案化基板的方法包含以下步驟序列:(1)第一乾式蝕刻階段,包含以下步驟:將第一含氟前驅物及含氫前驅物之各者流入遠端電漿區域,遠端電漿區域流體耦合至基板處理區域,同時在遠端電漿區域中形成第一電漿,以產生第一電漿流出物,及在暴露的含矽與氧區域上形成保護性固態副產物,以形成受保護的含矽與氧區域;(2)第二乾式蝕刻階段,包含以下步驟:將第二含氟前驅物流入遠端電漿區域,同時在遠端電漿區域中形成第二電漿,以產生第二電漿流出物,及藉由將第二電漿流出物通過噴頭中的通孔,流入基板處理區域,而相較於受保護的含矽與氧區域,更快速地蝕刻第二材料的暴露的區域;及(3)藉由提昇圖案化基板的溫度,自受保護的含矽與氧區域昇華保護性固態副產物。形成保護性固態副產物之步驟包含以下步驟:在噴頭中將第一電漿流出物流入基板處理區域。
部分額外實施例與特徵在隨後的說明書中提出,而對於此技術領域中具有通常知識者而言在詳閱此說明書後
可易於瞭解部分額外實施例與特徵,或者此技術領域中熟習技藝者可透過操作本文揭露的實施例而瞭解部分額外實施例與特徵。透過在說明書中描述的設備、結合物與方法,可實現與獲得本文揭露的實施例之特徵與優點。
茲描述一種在圖案化異質結構上抑制對暴露的含矽與氧材料之蝕刻速率的方法,且該方法包括兩階段遠端電漿蝕刻。使用本文之技術增加選擇性的材料之範例包括氮化矽及矽。遠端電漿蝕刻的第一階段將電漿流出物與圖案化異質結構反應,以在含矽與氧材料上形成保護性固態副產物。第一階段的電漿流出物由結合前驅物的遠端電漿形成,包括含氮前驅物及含氫前驅物。遠端電漿蝕刻的第二階段亦將電漿流出物與圖案化異質結構反應,以選擇性地移除缺乏保護性固態副產物的材料。第二階段的電漿流出物由含氟前驅物的遠端電漿形成。
為了較佳地瞭解與認識本發明,現在請參考第1圖,第1圖為根據本文揭露的實施例之矽選擇性蝕刻製程的流程圖。矽為使用本文所呈現的方法可增加選擇性的材料之一個實例。在第一個操作之前,於經圖案化基板中形成一結構。該結構擁有個別的氧化矽及矽的暴露區域。接著傳遞基板進入處理區域(操作110)。氨及三氟化氮之流體開始進入與基板處理腔室分開的電漿區域中
(操作113)。分離的電漿區域可指本文的遠端電漿區域,且可能為與處理腔室有所區別的模組,或為處理腔室內的隔間。遠端電漿流出物(即,來自遠端電漿的產物)流入處理區域中,且允許與基板表面互動(操作115)。保護性固態副產物選擇性地形成在暴露的氧化矽上,但不形成在矽上(操作118)。保護性固態副產物的形成消耗氧化矽的頂層,且保護性固態副產物具有來自電漿流出物之材料與來自氧化矽之材料。不論事實上在製程期間消耗非常少的氧化矽(且直到操作135為止更少量離開表面),操作113-118可共同指本文的第一乾式蝕刻階段。
從三氟化氮及氨所產生的電漿流出物包括各種分子、分子片段及離子物種。目前持有的保護性固態副產物形成的理論機制可能或並非完全正確,但電漿流出物被考慮為包括NH4F及NH4F.HF,此等易於與本文所述的暴露於低溫之含矽與氧的區域反應。舉例而言,電漿流出物可與氧化矽表面反應,以形成(NH4)2SiF6、NH3及H2O產物。NH3及H2O在本文所述的處理條件下為蒸氣,且可藉由真空泵從基板處理區域移除。一層薄的(NH4)2SiF6固態副產物被遺留在圖案化基板表面的氧化矽部分上。矽(Si)源自暴露的氧化矽,且來自(NH4)2SiF6的剩餘物之氮、氫及氟源自電漿流出物。可使用進入遠端電漿區域的各種三氟化氮對氨之比率,然而,介於1:1及4:1之間或約2:1的氨對三氟化氮可使用於本發明之實施例。
一般而言,在第一乾式蝕刻階段流動的含氫前驅物包含至少一個選自以下構成之群組之前驅物:氫原子、氫分子、氨、無取代之碳氫化合物(perhydrocarbon)及非完全鹵素取代的碳氫化合物。氫原子及氫分子適於保護含矽與氧的材料,同時蝕刻單晶矽及多晶矽之形式的矽,然而,當蝕刻諸如氮化矽的含矽與氮材料時,應避免氫原子及氫分子的使用。已發現氫原子及氫分子以類似於含矽與氮材料之方式在含矽與氮材料上成長保護性固態副產物。氫的剩餘來源可用於選擇性地蝕刻矽或含矽與氮材料任一者。
發明者已發現(保護性)固態副產物是針對以下乾式蝕刻階段的有效屏障。三氟化氮之流體接著被引導進入遠端電漿區域(操作120)。在此階段期間,於本發明的實施例中,少量或並無氫共同引導進入遠端電漿區域。此第二含氟前驅物不可與氫的來源混合,且第二電漿流出物接著可為基本上缺乏氫。可添加少量的氨或氫(例如,少於1:5或1:10的H:F原子流量比率),而不破壞暴露的矽區域之高度選擇性蝕刻速率。可使用氟的其它來源以增強或取代三氟化氮。一般而言,可使含氟前驅物流入電漿區域,且含氟前驅物包含選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫及二氟化氙所組成之群組中的至少一種前驅物。甚至諸如四氟化碳、三氟甲烷、二氟甲烷、氟甲烷等等的含碳前驅物也可加入已經列示的群組。
接著使在遠端電漿區域中形成的電漿流出物流入基板處理區域(操作125)。選擇地蝕刻經圖案化基板(操作130),部分歸因於保護性固態副產物的覆蓋,使得暴露的矽以顯著大於氧化矽的蝕刻速率之速率而被移除。操作120-130共同指本文的第二乾式蝕刻階段。在揭露的實施例中,蝕刻選擇性可大於或約20:1、大於或約30:1、大於或約50:1或大於或約80:1。此等蝕刻選擇性範圍不僅應用至(矽):(氧化矽),但更一般性地應用至(矽):(含矽與氧材料)。反應性化學物種藉由加熱圖案化基板自基板處理區域移除(操作135)。接著自處理區域移除基板(操作145)。一般而言,正如第一乾式蝕刻階段,含氟前驅物可包含至少一個選自以下構成之群組的前驅物:原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫及二氟化氙、四氟化碳、三氟甲烷、二氟甲烷、氟甲烷及類似者。在第二乾式蝕刻階段期間,使用含碳前驅物通常可從含氧前驅物的共同流獲得益處,以在碳可併入基板之前使含氧前驅物與碳反應。
亦已發現本文所呈現的遠端電漿蝕刻製程,相對於通常的氧化矽或含矽與氧材料,幫助含矽與氮材料(例如,氮化矽)的選擇蝕刻。先前的乾式蝕刻已達成高達約2:1之(氮化矽):(氧化矽)的選擇性。使用本文所呈現的方法,對於例如(含矽與氮材料):(含矽與氧材料)的乾式蝕刻選擇,在本發明的實施例中可大於或約5:1、10:1、
20:1、50:1或100:1。本文所回報關於矽及含矽與氮材料兩者的選擇性之任何量測,基本上受限於待移除的較高蝕刻速率材料的量。在實施例中,更迅速蝕刻的材料(例如,矽及含矽與氮材料)可基本上缺乏氧。
在本發明的實施例中,於第一乾式蝕刻階段期間圖案化基板的溫度可低於60℃、50℃、40℃或35℃之一者。於第一乾式蝕刻階段期間所形成的保護性固態副產物,於第二乾式蝕刻階段期間殘留在圖案化基板上,且於接續的昇華步驟期間被移除。一般而言,於第二乾式蝕刻階段期間基板的溫度可介於約-30℃及約80℃間,以確保保護性固態副產物並非過早地被移除。有益地,已發現在此範圍之中較低的溫度具有較高的蝕刻速率。在實施例中,於第二乾式蝕刻階段期間基板的溫度可為約-20℃或更高、約5℃或更高或約10℃或更高。在所揭露的實施例中,於第二乾式蝕刻階段期間基板溫度亦可少於或約75℃、少於或約50℃、少於或約30℃、少於或約20℃、少於或約15℃或少於或約10℃。在本發明的實施例中,完全昇華期間的固態副產物及圖案化基板的溫度可提昇高於90℃、100℃、120℃或140℃之一者。
第一乾式蝕刻階段可維持約3秒、5秒或10秒或更久。在本發明的實施例中,第一乾式蝕刻階段可維持約30秒、20秒或10秒或更少。在實施例中,第二乾式蝕刻階段可維持約15秒或約30秒或更久。在本發明的實施例中,第二乾式蝕刻階段可維持約2分鐘或約1分鐘或
更少。任何上限可與任何下限結合,以提供額外的揭露實施例所呈現的額外的範圍。在所揭露的實施例中,昇華的期限可高於45秒、60秒、75秒、90秒或120秒之一者。
在第一乾式蝕刻階段期間,含氟前驅物及/或含氫前驅物可進一步包括一或多種相對的惰性氣體,如He、N2、Ar等等。可用惰性氣體來增進電漿穩定性。在一實施例中,含氟氣體包括:流速介於約5 sccm(每分鐘標準立方公分)及300 sccm之間的NF3;流速介於約10 sccm與5 slm(每分鐘標準公升)之間的NF3;流速介於約0 sccm與5 slm之間的He;以及流速介於約0 sccm與5 slm之間的Ar。在第二乾式蝕刻階段期間僅需要含氟前驅物。含氟前驅物可進一步包括一或更多相對惰性的氣體,例如He、N2、Ar或類似者。惰性氣體可用於改善電漿穩定性。在一實施例中,含氟氣體包括:流速介於約5 sccm(每分鐘標準立方公分)及300 sccm之間的NF3;流速介於約0 sccm與3 slm(每分鐘標準公升)之間的He;以及流速介於約0 sccm與3 slm之間的Ar。在本發明的實施例中,於第二乾式蝕刻階段期間少量或基本上無NH3(或其他含氫前驅物)之流動。為了確保,可在第二乾式蝕刻階段期間利用某些含氫前驅物。含氫前驅物可結合其它前驅物後流入電漿區域或個別流入電漿區域,然而,應保持低濃度。氫可與電漿中的含氟前驅物反應,以形成可移除額外氧化矽的前驅物,所述前驅物藉由在氧化物
表面上形成固態副產物來移除氧化矽。此反應降低了暴露的矽、氮化矽或含矽與氮區域相較於暴露的氧化矽區域之選擇性。儘管在某些實施例中導入一些氫可能是有利的,但在其它實施例中,於蝕刻製程期間也可能沒有或基本上沒有氫氣流被導入電漿區域。本案所屬技術領域中之一般技藝人士可體認到可依據數個因素來使用其它氣體及/或流,該等因素包括處理腔室配置、基板尺寸、待蝕刻特徵結構的表面形貌及布局等等。
在第一乾式蝕刻階段期間,本發明之方法包括下列步驟:當含氟前驅物及含氫前驅物處在遠端電漿區域中的同時,施加能量至含氟前驅物及含氫前驅物,以產生電漿流出物。在第二乾式蝕刻階段期間,本發明之方法包括下列步驟:當含氟前驅物處在遠端電漿區域中的同時,施加能量至含氟前驅物,以產生電漿流出物。如本案所屬技術領域中的一般技藝者可認知的,在任一者階段期間的電漿可包括若干帶電荷物種及中性物種,包括自由基及離子。可使用已知技術(如,RF技術、電容耦合技術、感應耦合技術等等)來產生電漿。在一實施例中,可使用電容耦合式電漿單元在介於約10 W與15000 W之間的源功率及介於約0.2 Torr與30 Torr之間的壓力下施加能量。電容耦合式電漿單元可經設置而遠離處理腔室的氣體反應區域。舉例而言,可藉由噴頭及/或離子抑制器將電容耦合式電漿單元及電漿產生區域與氣體反應區域隔離。
在第一乾式蝕刻階段及/或第二乾式蝕刻階段期間,於基板處理區域之中的壓力低於或約50 Torr、低於或約30 Torr、低於或約20 Torr、低於或約10 Torr或低於或約5 Torr。在本發明的實施例中,在此等階段期間之壓力可高於或約0.1 Torr、高於或約0.2 Torr、高於或約0.5 Torr或高於或約1 Torr。溫度或壓力的任何上限可與任何下限結合,以形成額外的實施例。在第一乾式蝕刻階段期間的壓力可高於第二乾式蝕刻階段期間,因為前驅物結合的依賴,以形成建立保護性固態副產物的前驅物。
一般而言,本文所述的製程可使用於抑制含矽及氧(且非僅僅氧化矽)之薄膜的乾式蝕刻速率。在本發明的實施例中,遠端電漿蝕刻製程可保護含矽與氧材料,該含矽與氧材料包括約30%或更多矽的原子濃度,及約30%或更多氧的原子濃度。含矽與氧材料亦可基本上由矽及氧組成,允許少量的摻雜濃度及其他非所欲或所欲的少數添加物。當然,在本發明的實施例中,含矽與氧材料可為氧化矽。
如上所述,相較於蝕刻含矽與氧材料,遠端電漿蝕刻製程可更快速地蝕刻含矽與氮材料。在本發明的實施例中,含矽與氮材料可包括約30%或更多矽的原子濃度,及約30%或更多氮的原子濃度。含矽與氮材料亦可基本上由矽及氮組成,允許少量的其他非所欲或所欲的少數添加物之濃度。當然,在本發明的實施例中,含矽與氮材料可為氮化矽。
額外的製程參數在描述範理處理腔室與系統期間揭示。
可實施本發明之實施例的處理腔室可被納入諸如可購自美國加州聖大克勞拉市的Applied Materials,Inc.的CENTURA®及PRODUCER®系統處理平台內。可與本發明之範例方法一併使用的基板處理腔室的範例可包括顯示並描述於共同讓渡給Lubomirsky等人的美國臨時專利申請案第60/803,499號中的該等腔室,該案於2006年5月30日提出申請,且標題為「PROCESS CHAMBER FOR DIELECTRIC GAPFILL」,該案全文在此併入作為參考。額外的範例系統可包括顯示並描述於美國專利第6,387,207號與第6,830,624號中的系統,該等專利之全文亦在此併入作為參考。
第2A圖為根據本文揭露的實施例之基板處理腔室200。遠端電漿系統210可處理含氟前驅物,含氟前驅物接著行進穿過氣體入口組件211。在氣體入口組件211內可見兩個個別的氣體供應通道。第一通道212裝載穿過遠端電漿系統210(RPS)的氣體,而第二通道213繞過遠端電漿系統210。在實施例中,任一通道皆可供含氟前驅物所用。另一方面,第一通道212可供製程氣體所用,且第二通道213可供處理氣體(treatment gas)所用。圖所示之蓋體(或導電的頂部分)221及穿孔的隔件或噴
頭253之間有絕緣環224,絕緣環使得AC電位得以相對於噴頭253施加到蓋體221。AC電位在腔室電漿區域220中點燃電漿。製程氣體可行進穿過第一通道212進入腔室電漿區域220,且可單獨受到腔室電漿區域220中(或者與遠端電漿系統210結合)之電漿的激發。若製程氣體(含氟前驅物)流經第二通道213,則隨後僅有腔室電漿區域220用於激發。腔室電漿區域220及/或遠端電漿系統210的結合可指本文中的遠端電漿系統。穿孔的隔件(亦指噴頭)253將腔室電漿區域220與噴頭253下方的基板處理區域270分隔。噴頭253使電漿得以存在於腔室電漿區域220中,以避免直接於基板處理區域270中激發氣體,同時依然使受激發物種得以從腔室電漿區域220行進至基板處理區域270。
噴頭253位於腔室電漿區域220與基板處理區域270之間,且噴頭253容許在遠端電漿系統210及/或腔室電漿區域220內產生的電漿流出物(前驅物或其它氣體的受激發衍生物)通過複數個通孔256,通孔256橫切板的厚度。噴頭253也具有一或多個中空容積251,蒸氣或氣體形式的前驅物可填充中空容積251,並通過小通孔255進入基板處理區域270但不直接進入腔室電漿區域220。此揭露之實施例中的噴頭253比通孔256的最小直徑250的長度還厚。為了維持從腔室電漿區域220穿透至基板處理區域270的受激發物種之顯著濃度,可透過形成通孔256之較大的直徑部分使該較大的直徑部分穿
過噴頭253達某一程度(part way),而限制通孔的最小直徑250的長度226。在本文揭露的實施例中,通孔256的最小直徑250之長度可與通孔256的最小直徑相同數量級,或者為較小的數量級。
離子抑制器可用於控制通過進入基板處理區域的離子密度。此可供以在受保護的含矽與氧材料及矽或含矽與氮材料間進一步增加蝕刻速率。離子抑制元件的功能為減少或消滅自電漿產生區域行進至基板的帶離子電荷物種。不帶電的中性或自由基物種可通過離子抑制器中的開口而於基板處發生反應。應注意的是,完全消滅圍繞基板的反應區域中之帶離子電荷物種並不總是期望的目標。在許多實例中,需要離子物種抵達基板,以進行蝕刻及/或沉積製程。在這些實例中,離子抑制器有助於將反應區域中之離子物種的濃度控制在能協助製程的水平。
根據本發明的某些實施例,在本文所述之離子抑制器可用來提供自由基及/或中性物種,用於選擇地蝕刻基板。在一個實施例中,例如,離子抑制器可用來提供含氟之電漿流出物,以更加選擇性地蝕刻矽或氮化矽。除了保護性固態副產物之外,使用經離子過濾的電漿流出物,例如矽相對於氧化矽的蝕刻速率可進一步增加至本文所述的值。離子抑制器可用於提供反應性氣體,所述反應性氣體所具有的自由基濃度高於離子濃度。因為電漿的大部分帶電顆粒被離子抑制器過濾或移除,在蝕刻
製程期間基板不一定需要偏壓。相較於包括濺鍍及轟擊的習用電漿蝕刻製程而言,此等使用自由基及其它中性物種的製程可減少電漿傷害。
如第2A圖所示,噴頭253可經配置以符合離子抑制器的目的。或者,可包括隔離處理腔室元件(未繪示)來抑制離子濃度行進至基板處理區域270。蓋體221與噴頭253可分別具有第一電極與第二電極的功能,使得蓋體221與噴頭253可接收不同的電壓。在這些配置中,可將電功率(如,RF功率)施加至蓋體221、噴頭253或二者。舉例而言,可將電功率施加至蓋體221,同時使噴頭253(作為離子抑制器)接地。基板處理系統可包括RF產生器,RF產生器將電功率供應至蓋體及/或噴頭253。施加至蓋體221的電壓可促進腔室電漿區域220內之電漿的均勻分布(即,減少局部化的電漿)。為了能在腔室電漿區域220中形成電漿,絕緣環224可使蓋體221與噴頭253電性絕緣。絕緣環224可由陶瓷製作,且可具有高崩潰電壓以避免產生火花。接近剛才所述之電容耦合式電漿部件的基板處理腔室200部分可進一步包括冷卻單元(未繪示),冷卻單元包括一或多個冷卻流體通道,以用循環冷卻劑(如,水)冷卻暴露於電漿的表面。
在所顯示的實施例中,一旦製程氣體受到腔室電漿區域220中的電漿激發,噴頭253可(透過通孔256)分配製程氣體,製程氣體可含有氧、氟及/或氮,及/或分配此類製程氣體的電漿流出物。在某些實施例中,導入遠端電
漿系統210及/或腔室電漿區域220的製程氣體可含有氟(如,F2、NF3或XeF2)。製程氣體也可包括諸如氦、氬、氮(N2)等的載氣。電漿流出物可包括製程氣體的離子化或中性的衍生物,且在此亦可指是自由基氟,該前驅物即為所導入的製程氣體之原子的組分。
通孔256經配置以阻止帶離子電荷物種遷移離開腔室電漿區域220,同時容許不帶電的中性或自由基物種通過噴頭253進入基板處理區域270。這些不帶電的物種可包括高度反應性物種,高度反應性物種可與較不具反應性之載氣一起藉由通孔256輸送。如上文所提及,可減少離子物種藉由通孔256進行遷移,且在某些實例中,可完全阻止離子物種藉由通孔256進行遷移。控制離子物種通過噴頭253的數量可增進對與下方晶圓基板接觸之氣體混合物的控制,從而增進對氣體混合物之沉積及/或蝕刻特性的控制。舉例而言,調整氣體混合物的離子濃度可顯著改變該氣體混合物選擇性(如,氮化矽:氧化矽蝕刻比例)。
在某些實施例中,通孔256的數目可介於約60個與約2000個之間。通孔256可具有各種形狀,但最容易被製成圓形。在本文揭露的實施例中,通孔256的最小直徑250可介於約0.5 mm與約20 mm之間,或介於約1 mm與約6 mm之間。在選擇通孔的截面形狀上,亦有範圍,截面可做成錐形、圓柱形或該二種形狀的組合。在本文所揭露的實施例中,用於將未激發的前驅物導入基板處
理區域270的小通孔255數目可介於約100與約5000之間,或介於約500與約2000之間。小通孔255的直徑可介於約0.1 mm與約2 mm之間。
通孔256可經配置以控制電漿活化之氣體(即,離子、自由基及/或中性物種)通過噴頭253。舉例而言,通孔的縱橫比(即,孔徑對長度)及/或通孔的表面形貌可受到控制,藉以減少通過噴頭253的經活化氣體中的帶離子電荷物種流。噴頭253中的通孔256可包括面對腔室電漿區域220的錐形部分,以及面對基板處理區域270的圓柱形部分。可訂定圓柱形部分的比例及尺寸以控制通過進入基板處理區域270的離子物種流。可調整的電偏壓也可被施加至噴頭253作為控制穿過噴頭253的離子物種流之額外手段。
或者,通孔256朝向噴頭253的頂表面可具有較小的內徑(inner diameter;ID),且朝向噴頭253的底表面可具有較大的ID。此外,可將通孔256的底緣切角,以在電漿流出物離開噴頭時,促進將電漿流出物均勻地分布於基板處理區域270中,並因而增進電漿流出物及前驅物氣體的均勻分布。較小的ID可沿著通孔256設置於多個位置,並仍可容許噴頭253可降低基板處理區域270內的離子密度。離子密度的降低起因於離子在進入基板處理區域270之前與孔壁碰撞次數的增加。每次碰撞增加了藉由從孔壁獲得或失去電子而使離子中和的可能性。一般而言,通孔256的較小的ID可介於約0.2 mm
與約20 mm之間。在其它實施例中,較小的ID可介於約1 mm與約6 mm之間,或介於約0.2 mm與約5 mm之間。進一步,通孔256的縱橫比(即,較小的ID對通孔長度)可為將近1至20。通孔的較小的ID可為沿著通孔的長度可見之最小ID。通孔256的剖面形狀一般可為圓柱形、圓錐形或該等形狀的任何組合。
第2B圖為根據本文揭露的實施例與處理腔室一起使用之噴頭253的底視圖。噴頭253對應第2A圖所示之噴頭。通孔256被描繪成在噴頭253底部具有較大內徑(ID),且在頂部具有較小ID。小通孔255實質上平均分布在噴頭的表面上,甚至分佈在通孔256之間,相較於本文所述的其它實施例,這種分佈方式有助於提供更均勻的混合。
當含氟電漿流出物與含氧電漿流出物穿過噴頭253中的通孔256抵達基板處理區域270時,範例經圖案化基板可在基板處理區域270內由基座(未繪示)支撐。儘管可將基板處理區域270裝配成支援電漿以供諸如固化等其它製程所用,然而在本發明的實施例中,蝕刻經圖案化基板期間無電漿存在。
可在噴頭253上方的腔室電漿區域220中,或在噴頭253下方的基板處理區域270中點燃電漿。電漿存在腔室電漿區域220中,以自流入的含氟前驅物製造自由基氟。典型處在無線射頻(RF)範圍中的AC電壓可被施加在處理腔室的導電頂部分(蓋體221)與噴頭253之間,以
於沉積期間在腔室電漿區域220中點燃電漿。RF功率供應器可產生13.56 MHz的高RF頻率,但也可單獨或結合13.56 MHz頻率產生其它頻率。
當基板處理區域270中的底部電漿啟動時,可使頂部電漿處在低功率或無功率下,以硬化膜或清潔形成基板處理區域270邊界的內表面。可藉由在噴頭253與基座之間或在噴頭253與腔室的底部之間施加AC電壓,來點燃基板處理區域270中的電漿。可在電漿存在的同時,引導清潔氣體進入基板處理區域270。
基座可具有熱交換通道,熱交換流體流過熱交換通道以控制基板的溫度。此配置方式容許冷卻或加熱基板溫度,以維持相對低的溫度(從室溫直到約120℃)。熱交換流體可包含乙二醇與水。可使用埋入式單迴圈埋入式加熱器元件,來電阻式加熱基座的晶圓支撐淺盤(較佳為鋁、陶瓷或前述材料之組合)達到相對高的溫度(從約120℃直到約1100℃),該加熱器元件經配置以造成平行的同心圓形式的兩個完整迴轉。加熱器元件的外部分可繞於鄰接支撐淺盤的周邊處,同時加熱器元件的內部分繞於具有較小半徑的同心圓的路徑上。連接至加熱器元件的配線穿過基座的主幹。
腔室電漿區域或遠端電漿系統中的區域可稱為遠端電漿區域。在某些實施例中,自由基前驅物(即,自由基氟)形成於遠端電漿區域中,並行進進入矽或含矽與氮材料優先被蝕刻的基板處理區域中。在某些實施例中,電漿
功率可基本上僅被施加至遠端電漿區域,以確保自由基氟及自由基氧(二者一起被稱為電漿流出物)不會在基板處理區域中進一步被激發。
在利用腔室電漿區域的實施例中,被激發的電漿流出物是在與沉積區域分隔的基板處理區域的區段中產生。該沉積區域(在本文中亦稱作基板處理區域)是電漿流出物混合並反應以蝕刻經圖案化基板(如,半導體晶圓)之處。被激發的電漿流出物也可伴隨著惰性氣體(在範例實例中,惰性氣體為氬氣)。在蝕刻經圖案化基板期間,本文中的基板處理區域可被描述為「無電漿(plasma-free)」。「無電漿」不必然意味著該區域缺乏電漿。因通孔256的形狀及尺寸之故,在電漿區域內所產生之相對低濃度的離子化物種及自由電子會行進穿過隔件(噴頭/離子抑制器)中的孔洞(口孔)。在某些實施例中,於第一或第二蝕刻階段期間,基板處理區域內基本上沒有離子化物種及自由電子的濃度。腔室電漿區域中電漿的邊界是難以界定的,且可能透過噴頭中的口孔侵入基板處理區域上。在感應耦合電漿的實例中,可直接在基板處理區域內執行少量的離子化。再者,低強度的電漿可在基板處理區域中生成,而不至於消滅形成的膜之期望特徵。激發的電漿流出物生成期間造成電漿的強度離子密度遠低於腔室電漿區域(就此而言,或者是遠低於遠端電漿區域)的所有原因不悖離本文所用的「無電漿」之範疇。
在本文所揭露的實施例中,可以介於約25 sccm與約200 sccm之間、介於約50 sccm與約150 sccm之間或介於約75 sccm與約125 sccm之間的速率使三氟化氮(或另一種含氟前驅物)流入腔室電漿區域220。在本文所揭露的實施例中,可以大於或等於約250 sccm、大於或等於約500 sccm或大於或等於約1 slm的速率使氧氣(O2)流入腔室電漿區域220。
含氟前驅物及含氧前驅物進入腔室的結合流速可佔總氣體混合物的體積的0.05%至約20%;剩餘的部分是載氣。在一些實施例中,含氟前驅物及含氧前驅物流入遠端電漿區域,但電漿流出物具有相同的體積流量比率。在含氟前驅物的實例中,可在含氟氣體之前先啟動淨化氣體或載氣進入遠端電漿區域,以穩定遠端電漿區域內的壓力。
施加至遠端電漿區域的電漿功率可為多種頻率或為多重頻率的組合。在範例處理系統中,可藉由蓋體221與噴頭253之間所傳遞的RF功率來提供電漿。在本文所揭露的實施例中,RF功率可介於約10瓦與約15000瓦之間、介於約20瓦與約1500瓦之間,或介於約50瓦與約500瓦之間。在本文所揭露的實施例中,於範例處理系統中所施加的RF頻率可為小於約200 kHz的低RF頻率、介於約10 MHz與約15 MHz之間的高RF頻率,或大於或等於約1 GHz的微波頻率。
在將載氣與電漿流出物流入基板處理區域270期間,
可將基板處理區域270維持在各種壓力下。基板處理區域內的壓力低於或等於約50 Torr、低於或等於約30 Torr、低於或等於約20 Torr、低於或等於約10 Torr或低於或等於約5 Torr。在本發明的實施例中,壓力可高於或等於約0.1 Torr、高於或等於約0.2 Torr、高於或等於約0.5 Torr或高於或等於約1 Torr。壓力的下限可與壓力的上限結合以達成本發明的進一步實施例。
在一或多個實施例中,基板處理腔室200可整合至各種多處理平台,包括可購自美國加州聖大克勞拉市的Applied Materials,Inc.的ProducerTM GT、CenturaTM AP及EnduraTM平台。此類處理平台能夠進行數種處理操作而不破真空。可實施本發明實施例的處理腔室可包括介電蝕刻腔室或各種化學氣相沉積腔室,還有其它類型的腔室。
沉積系統的實施例可併入較大型的生產積體電路晶片的製造系統。第3圖顯示根據本文揭露的實施例的一個此類沉積、烘烤及硬化腔室的系統400。於此圖中,一對前開式晶圓盒(front opening unified pod,FOUP)302供應基板,基板(例如,300 mm直徑之晶圓)由機器人手臂304承接,並在置入晶圓處理腔室308a至308f中之一者以前先置入低壓保持區306內。可使用第二機器人手臂310自低壓保持區306傳輸基板晶圓至晶圓處理腔室308a至308f並往回傳輸。晶圓處理腔室308a至308f之各者可被裝備成進行多個基板處理操作,該等操作包
括本文所述的乾式蝕刻製程,還可包括循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清潔、脫氣、定向及其它基板製程等額外操作。
晶圓處理腔室308a至308f可包括一或多個系統部件,以在基板晶圓上沉積、退火處理、硬化及/或蝕刻可流動介電膜。在一個配置中,兩對處理腔室(如,308c至308d及308e至308f)可用於沉積介電材料於基板上,而第三對處理腔室(如,308a至308b)可用於蝕刻沉積的介電質。在另一個配置中,所有三對腔室(如,308a至308f)可經配置以在基板上蝕刻介電膜。任一或多個所述的製程可在與本文揭露的實施例中所示的製造系統分開的腔室上執行。
基板處理系統由系統控制器所控制。在示範實施例中,系統控制器包括硬碟機、軟碟機及處理器。處理器含有單板電腦(SBC)、類比及數位輸入/輸出板、介面板及步進馬達控制板。CVD系統的各種部件符合Versa Modular European(VME)標準,該標準定義板、卡片機架(card cage)以及連接器尺寸及類型。VME標準亦定義具有16位元資料匯流排及24位元位址匯流排之匯流排結構。
系統控制器357可用於控制馬達、閥、流量控制器、電源供應器以及其它執行本文所述製程配方需要的功能。氣體操縱系統355也可由系統控制器357控制,以
將氣體引導至晶圓處理腔室308a至308f的其中一個或全部。系統控制器357可仰賴來自光學感測器的反饋,以確定並且調整氣體操縱系統355及/或晶圓處理腔室308a至308f中之可移動的機械組件之位置。機械組件可包括機器人、節流閥及基座,前述部件在系統控制器357的控制下藉由馬達移動。
在示範實施例中,系統控制器357包括硬碟機(記憶體)、USB埠、軟碟機及處理器。系統控制器357包括類比及數位輸入/輸出板、介面板及步進馬達控制板。含有基板處理腔室200的多重腔室處理系統300之各種部件受到系統控制器357之控制。系統控制器執行系統控制軟體,系統控制軟體以電腦程式之形式儲存在諸如硬碟、軟碟或快閃記憶體隨身碟等電腦可讀媒體上。也可使用其它形式的記憶體。電腦程式包括指令集,該等指令集指示時間、氣體混合、腔室壓力、腔室溫度、RF功率位準、基座位置及其它特定製程的參數。
可使用由控制器執行的電腦程式產品來實施用於在基板上沉積或其它方式處理膜的製程,或者實施用於清潔腔室的製程。電腦程式編碼可以習知電腦可讀的程式語言撰寫,例如68000組合語言、C、C++、Pascal、Fortran或其它程式語言。使用習知的文字編輯器將適合的程式編碼輸入單一檔案或多重檔案,並且儲存於電腦可使用媒體(如電腦的記憶體系統)或由電腦可使用媒體實施。倘若輸入的編碼文字是高階語言,則編譯編碼,而所得
的編譯程式編碼隨後與預先編譯的Microsoft Windows®函式庫常式之目的碼連結。為了執行該連結、編譯的目的碼,系統使用者援用該目的碼,使電腦系統載入記憶體中的編碼。CPU隨後讀取並且執行該編碼,以進行程式中辨識的任務。
使用者與控制器之間的介面可為透過接觸感應顯示器,亦可包括滑鼠及鍵盤。在使用兩個顯示器的一個實施例中,一個顯示器安裝在清潔室壁以供操作者使用,且另一個顯示器在壁後以供維修技術人員使用。兩個顯示器可同時顯示相同資訊,在這樣的實例中,一次僅有一個顯示器被配置成接受輸入。為了選擇特殊的螢幕或功能,操作者以手指或滑鼠接觸顯示螢幕上的指定的區域。被接觸的區域改變該區域的強調色彩,或顯示新的選單或螢幕,確認操作者的選擇。
本文所使用的「基板(substrate)」可為具有或不具有形成在上面的多個層之支撐基板。經圖案化基板可為有各種摻雜濃度及摻雜輪廓的絕緣體或半導體,可例如為用在積體電路製造上之類型的半導體基板。經圖案化基板的暴露的「矽(silicon)」主要是Si,但也可包括少量濃度的其它基本組成分,如硼、磷、氮、氧、氫、碳等等。術語「矽」可代表單晶矽或多晶矽。經圖案化基板的暴露的「氮化矽(silicon nitride)」主要是Si3N4,但也可包括少量濃度的其它基本組成分,如氧、氫、碳等等。經圖案化基板的暴露的「氧化矽(silicon oxide)」主要是
SiO2,但也可包括其它基本組成分的濃度,如氮、氫、碳等等。在某些實施例中,使用本文所揭露之方法蝕刻的氧化矽膜基本上由矽與氧構成。術語「前驅物(precursor)」指的是參與反應從表面移除材料或沉積材料在表面上的任何製程氣體。「電漿流出物(plasma effluent)」描述自腔室電漿區域離開並且進入基板處理區域的氣體。電漿流出物處於「激發態(excited state)」,其中至少有一些氣體分子處於振動型式的激發、解離及/或離子化的狀態。「自由基前驅物(radical precursor)」是用於描述參與反應從表面移除材料或沉積材料在表面上的電漿流出物(離開電漿、處於激發態的氣體)。「自由基氟(radical-fluorine)」(或「自由基氧(radical-oxygen)」)為含有氟(或氧)的自由基前驅物,但該自由基前驅物可能不含有其它基本組成分。「惰性氣體(inert gas)」一詞是指在蝕刻時不形成化學鍵結或被併入膜中的任何氣體。範例惰性氣體包括稀有氣體,但可包括其他氣體,只要當(一般而言)在膜中補捉到痕量的該氣體時不形成化學鍵結即可。
全文中所用之術語「間隙(gap)」與「溝槽(trench)」毫無暗指意味地是指蝕刻過的幾何形狀具有大的水平縱橫比。從表面上方觀之,溝槽可呈現圓形、卵形、多邊形、矩形或各種其它形狀。溝槽可以呈現材料島狀物周圍的壕溝形狀。術語「介層孔(via)」是指低縱橫比溝槽(由上方觀之),介層孔可或可不被金屬填充而形成垂直的電
連接。如本文所用,共形蝕刻製程指的是以與表面相同的形狀大體上均勻地移除表面上的材料,即蝕刻過的層的表面與蝕刻前的表面大體上平行。發明所屬技術領域中具有通常知識者將瞭解蝕刻過的介面可能不會100%共形,因此「大體上(generally)」之用語容許可接受的容忍度。
已在此揭示數個實施例,發明所屬技術領域中具有通常知識者應知可使用多種修飾例、替代架構與等效例而不背離本文揭露的實施例的精神。此外,說明書中不對多種習知製程與元件做說明,以避免不必要地混淆了本發明。因此,上述說明不應被視為對本發明範疇之限制。
當提供一範圍的數值時,除非文本中另外清楚指明,應知亦具體揭示介於該範圍的上下限值之間各個區間值至下限值單位的十分之一。亦涵蓋了所陳述數值或陳述範圍中之區間值以及與陳述範圍中任何另一陳述數值或區間值之間的每個較小範圍。該等較小範圍的上限值與下限值可獨立包含或排除於該範圍中,且各範圍(其中,在該較小範圍內包含任一個極限值、包含兩個極限值,或不含極限值)皆被本發明內所陳述之範圍涵蓋,除非在該陳述的範圍中有特別排除之限制。在所陳述之範圍包括極限值的一者或兩者之處,該範圍也包括該些排除其中任一者或兩者被包括的極限值的範圍。
在本文與隨附申請專利範圍中所使用之單數形式「一(a、an)」與「該(the)」等用語也包括複數形式,除非文
字中另外清楚指明。因此,舉例而言,「一種製程(a process)」所指的製程包括複數個此類製程,而「該介電材料(the dielectric material)」所指的包括一或多種介電材料以及該領域技術人士所熟知的該等材料之等效例等。
同樣,申請人希望此說明書與以下申請專利範圍中所用的「包含(comprise)」與「包括(include)」等用語是指存在所陳述之特徵、整體、部件或步驟,但該等用語不排除存在或增加一或多種其他特徵、整體、部件、步驟、動作或群組。
110~145‧‧‧處理步驟
210‧‧‧遠端電漿系統
212‧‧‧第一通道
220‧‧‧腔室電漿區域
224‧‧‧絕緣環
251‧‧‧中空容積
255‧‧‧小孔
270‧‧‧基板處理區域
302‧‧‧負載鎖定腔室
306‧‧‧保持區
310‧‧‧第二機器人手臂
357‧‧‧系統控制器
200‧‧‧基板處理腔室
211‧‧‧氣體入口組件
213‧‧‧第二通道
221‧‧‧蓋體
250‧‧‧通孔的最小直徑
253‧‧‧噴頭
256‧‧‧通孔
300‧‧‧處理系統
304‧‧‧機器人手臂
308‧‧‧處理腔室
355‧‧‧氣體操縱系統
透過參考說明書的其餘部份及圖式,可進一步瞭解本文揭露之實施例的本質與優點。
第1圖是乾式蝕刻處理的流程圖,根據所揭示的實施例而具有選擇性抑制的氧化矽蝕刻速率。
第2A圖圖示根據本發明實施例的基板處理腔室。
第2B圖圖示根據本發明實施例的基板處理腔室之噴頭。
第3圖圖示根據本發明實施例的基板處理系統。
在附圖中,相似的部件及/或特徵結構可具有相同的元件符號。進一步而言,同類的各部件可透過在元件符號
後加上一破折號以及第二符號(該符號區別類似部件)加以區別。倘若在說明書中僅用第一元件符號,該敘述內容可應用至具有相同第一元件符號(無論第二元件符號為何)的類似部件之任一者。
110~145‧‧‧處理步驟
Claims (20)
- 一種在一基板處理腔室的一基板處理區域中蝕刻一圖案化基板的方法,其中該圖案化基板具有一暴露的含矽與氧區域及一第二材料的一暴露的區域,該第二材料具有與該暴露的含矽與氧區域一不同的化學計量,蝕刻該圖案化基板的該方法包含以下步驟:(1)一第一乾式蝕刻階段,包含以下步驟:將一第一含氟前驅物及一含氫前驅物之各者流入一遠端電漿區域,該遠端電漿區域流體耦合至該基板處理區域,同時在該遠端電漿區域中形成一第一電漿,以產生第一電漿流出物,及在該暴露的含矽與氧區域上形成保護性固態副產物,以形成一受保護的含矽與氧區域,其中形成該保護性固態副產物包含以下步驟:在一噴頭中將該第一電漿流出物流入該基板處理區域;(2)一第二乾式蝕刻階段,包含以下步驟:將一第二含氟前驅物流入該遠端電漿區域,同時在該遠端電漿區域中形成一第二電漿,以產生第二電漿流出物,及藉由將該第二電漿流出物通過該噴頭中的通孔,流入該基板處理區域,而相較於該受保護的含矽與氧區域,更快速地蝕刻該第二材料的該暴露的區域;及 (3)藉由提昇該圖案化基板的一溫度,自該受保護的含矽與氧區域昇華該保護性固態副產物。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該暴露的含矽與氧區域為氧化矽。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該暴露的含矽與氧區域基本上由矽及氧組成。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該暴露的含矽與氧區域包含約30%或更多的矽,及約30%或更多的氧。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中在該第一乾式蝕刻階段及該第二乾式蝕刻階段之各者期間,該圖案化基板的該溫度大於或約-20℃且小於或約75℃。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中在該第一乾式蝕刻階段及該第二乾式蝕刻階段之各者期間,於該基板處理區域之中的一壓力低於或約50Torr且高於或約0.1Torr。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其 中在該遠端電漿區域中形成該第一電漿及在該遠端電漿區域中形成該第二電漿之步驟包含以下步驟:在該第一乾式蝕刻階段及該第二乾式蝕刻階段之各者期間,施加介於約10瓦及15000瓦之間的RF功率至該遠端電漿區域。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第一電漿及該第二電漿兩者均為電容耦合式電漿。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第二材料為單晶矽或多晶矽。
- 如請求項第9項所述的蝕刻該圖案化基板之方法,其中蝕刻該圖案化基板之該方法的一蝕刻選擇性(該第二材料的暴露的區域:暴露的含矽與氧區域)為大於或約20:1。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第二材料包含矽及氮。
- 如請求項第11項所述的蝕刻該圖案化基板之方法,其中蝕刻該圖案化基板之該方法的一蝕刻選擇性(該第二材料的暴露的區域:暴露的含矽與氧區域)為大於或約5:1。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第二材料包含約30%或更多的矽及約30%或更多的氮之一原子比例。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第二材料為氮化矽。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中在該第一乾式蝕刻階段及該第二乾式蝕刻階段之各者期間,該基板處理區域基本上不含電漿。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第一含氟前驅物包含原子氟、雙原子氟、三氟化氮、四氟化碳及二氟化氙之至少一者。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該含氫前驅物包含氫原子、氫分子、氨、一無取代之碳氫化合物(perhydrocarbon)及一非完全鹵素取代的碳氫化合物之至少一者。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第二含氟前驅物不與氫的一來源混合,且該第二電漿流出物基本上缺乏氫。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該基板處理區域之中基本上沒有離子化物種及自由電子的濃度。
- 如請求項第1項所述的蝕刻該圖案化基板之方法,其中該第二材料基本上缺乏氧。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161527823P | 2011-08-26 | 2011-08-26 | |
US13/449,543 US8679982B2 (en) | 2011-08-26 | 2012-04-18 | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201314768A TW201314768A (zh) | 2013-04-01 |
TWI541890B true TWI541890B (zh) | 2016-07-11 |
Family
ID=47744321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101128647A TWI541890B (zh) | 2011-08-26 | 2012-08-08 | 選擇性抑制含有矽及氧兩者之材料的乾式蝕刻速率 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8679982B2 (zh) |
KR (1) | KR101975236B1 (zh) |
CN (1) | CN103748666B (zh) |
TW (1) | TWI541890B (zh) |
WO (1) | WO2013032638A1 (zh) |
Families Citing this family (174)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8551891B2 (en) * | 2011-10-04 | 2013-10-08 | Applied Materials, Inc. | Remote plasma burn-in |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
US9299956B2 (en) * | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
US10283615B2 (en) | 2012-07-02 | 2019-05-07 | Novellus Systems, Inc. | Ultrahigh selective polysilicon etch with high throughput |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US8945414B1 (en) | 2013-11-13 | 2015-02-03 | Intermolecular, Inc. | Oxide removal by remote plasma treatment with fluorine and oxygen radicals |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9502218B2 (en) * | 2014-01-31 | 2016-11-22 | Applied Materials, Inc. | RPS assisted RF plasma source for semiconductor processing |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
WO2016025462A1 (en) * | 2014-08-12 | 2016-02-18 | Tokyo Electron Limited | Substrate processing method |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9558928B2 (en) * | 2014-08-29 | 2017-01-31 | Lam Research Corporation | Contact clean in high-aspect ratio structures |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9355862B2 (en) | 2014-09-24 | 2016-05-31 | Applied Materials, Inc. | Fluorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) * | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9385003B1 (en) * | 2015-02-16 | 2016-07-05 | Lam Research Corporation | Residue free systems and methods for isotropically etching silicon in tight spaces |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US11384432B2 (en) | 2015-04-22 | 2022-07-12 | Applied Materials, Inc. | Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate |
US9595452B2 (en) * | 2015-05-27 | 2017-03-14 | Lam Research Corporation | Residue free oxide etch |
US9449843B1 (en) | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
TWI610361B (zh) | 2015-06-26 | 2018-01-01 | 東京威力科創股份有限公司 | 具有可控制的含矽抗反射塗層或矽氮氧化物相對於不同薄膜或遮罩之蝕刻選擇性的氣相蝕刻 |
US9922840B2 (en) | 2015-07-07 | 2018-03-20 | Applied Materials, Inc. | Adjustable remote dissociation |
US9659791B2 (en) | 2015-07-16 | 2017-05-23 | Applied Materials, Inc. | Metal removal with reduced surface roughness |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
KR20180085807A (ko) * | 2015-12-18 | 2018-07-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 세정 방법 |
US10008388B2 (en) * | 2016-04-13 | 2018-06-26 | Applied Materials, Inc. | Device conformity control by low temperature, low pressure, inductively coupled ammonia-nitrogen trifluoride plasma |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10381235B2 (en) * | 2016-05-29 | 2019-08-13 | Tokyo Electron Limited | Method of selective silicon nitride etching |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10312102B2 (en) | 2016-08-29 | 2019-06-04 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) * | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10446405B2 (en) * | 2017-02-23 | 2019-10-15 | Tokyo Electron Limited | Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures |
WO2018156975A1 (en) * | 2017-02-23 | 2018-08-30 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
JP6929148B2 (ja) * | 2017-06-30 | 2021-09-01 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
JP6951548B2 (ja) * | 2017-08-01 | 2021-10-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 金属酸化物の後処理の方法 |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
CN107731678B (zh) * | 2017-08-24 | 2020-04-14 | 长江存储科技有限责任公司 | 三维存储器的制作方法 |
US10128086B1 (en) * | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) * | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
CN109166857A (zh) * | 2018-09-03 | 2019-01-08 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
US10892198B2 (en) * | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11195718B2 (en) * | 2019-07-03 | 2021-12-07 | Beijing E-town Semiconductor Technology Co., Ltd. | Spacer open process by dual plasma |
Family Cites Families (578)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2369620A (en) | 1941-03-07 | 1945-02-13 | Battelle Development Corp | Method of coating cupreous metal with tin |
US3451840A (en) | 1965-10-06 | 1969-06-24 | Us Air Force | Wire coated with boron nitride and boron |
US4632857A (en) | 1974-05-24 | 1986-12-30 | Richardson Chemical Company | Electrolessly plated product having a polymetallic catalytic film underlayer |
US4232060A (en) | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
US4397812A (en) | 1974-05-24 | 1983-08-09 | Richardson Chemical Company | Electroless nickel polyalloys |
US4006047A (en) | 1974-07-22 | 1977-02-01 | Amp Incorporated | Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates |
US3937857A (en) | 1974-07-22 | 1976-02-10 | Amp Incorporated | Catalyst for electroless deposition of metals |
US4265943A (en) | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4234628A (en) | 1978-11-28 | 1980-11-18 | The Harshaw Chemical Company | Two-step preplate system for polymeric surfaces |
US4214946A (en) | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
US4209357A (en) | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
IT1130955B (it) | 1980-03-11 | 1986-06-18 | Oronzio De Nora Impianti | Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti |
US4368223A (en) | 1981-06-01 | 1983-01-11 | Asahi Glass Company, Ltd. | Process for preparing nickel layer |
DE3205345A1 (de) | 1982-02-15 | 1983-09-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung von fluordotierten lichtleitfasern" |
US4585920A (en) | 1982-05-21 | 1986-04-29 | Tegal Corporation | Plasma reactor removable insert |
JPS6060060A (ja) | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | 鉄道車両の扉開閉装置 |
US4579618A (en) | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
US4656052A (en) | 1984-02-13 | 1987-04-07 | Kyocera Corporation | Process for production of high-hardness boron nitride film |
US4571819A (en) | 1984-11-01 | 1986-02-25 | Ncr Corporation | Method for forming trench isolation structures |
US4807016A (en) | 1985-07-15 | 1989-02-21 | Texas Instruments Incorporated | Dry etch of phosphosilicate glass with selectivity to undoped oxide |
US4714520A (en) | 1985-07-25 | 1987-12-22 | Advanced Micro Devices, Inc. | Method for filling a trench in an integrated circuit structure without producing voids |
US4749440A (en) | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
US4690746A (en) | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
US4892753A (en) | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
US4960488A (en) | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5228501A (en) | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
JPS63204726A (ja) | 1987-02-20 | 1988-08-24 | Anelva Corp | 真空処理装置 |
US5322976A (en) | 1987-02-24 | 1994-06-21 | Polyonics Corporation | Process for forming polyimide-metal laminates |
US4868071A (en) | 1987-02-24 | 1989-09-19 | Polyonics Corporation | Thermally stable dual metal coated laminate products made from textured polyimide film |
KR910006164B1 (ko) | 1987-03-18 | 1991-08-16 | 가부시키가이샤 도시바 | 박막형성방법과 그 장치 |
US5198034A (en) | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
EP0286306B1 (en) | 1987-04-03 | 1993-10-06 | Fujitsu Limited | Method and apparatus for vapor deposition of diamond |
US4753898A (en) | 1987-07-09 | 1988-06-28 | Motorola, Inc. | LDD CMOS process |
US4886570A (en) | 1987-07-16 | 1989-12-12 | Texas Instruments Incorporated | Processing apparatus and method |
US4810520A (en) | 1987-09-23 | 1989-03-07 | Magnetic Peripherals Inc. | Method for controlling electroless magnetic plating |
US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
US4851370A (en) | 1987-12-28 | 1989-07-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabricating a semiconductor device with low defect density oxide |
US4904341A (en) | 1988-08-22 | 1990-02-27 | Westinghouse Electric Corp. | Selective silicon dioxide etchant for superconductor integrated circuits |
US4894352A (en) | 1988-10-26 | 1990-01-16 | Texas Instruments Inc. | Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
US5030319A (en) | 1988-12-27 | 1991-07-09 | Kabushiki Kaisha Toshiba | Method of oxide etching with condensed plasma reaction product |
US4985372A (en) | 1989-02-17 | 1991-01-15 | Tokyo Electron Limited | Method of forming conductive layer including removal of native oxide |
US5186718A (en) | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US5061838A (en) | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
US5270125A (en) | 1989-07-11 | 1993-12-14 | Redwood Microsystems, Inc. | Boron nutride membrane in wafer structure |
US5013691A (en) | 1989-07-31 | 1991-05-07 | At&T Bell Laboratories | Anisotropic deposition of silicon dioxide |
US4994404A (en) | 1989-08-28 | 1991-02-19 | Motorola, Inc. | Method for forming a lightly-doped drain (LDD) structure in a semiconductor device |
DE69111493T2 (de) | 1990-03-12 | 1996-03-21 | Ngk Insulators Ltd | Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten. |
JP2960466B2 (ja) | 1990-03-19 | 1999-10-06 | 株式会社日立製作所 | 半導体デバイスの配線絶縁膜の形成方法及びその装置 |
US5089441A (en) | 1990-04-16 | 1992-02-18 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafers |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5147692A (en) | 1990-05-08 | 1992-09-15 | Macdermid, Incorporated | Electroless plating of nickel onto surfaces such as copper or fused tungston |
US5238499A (en) | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
JPH04228572A (ja) | 1990-08-10 | 1992-08-18 | Sumitomo Electric Ind Ltd | 硬質窒化ホウ素合成法 |
US5235139A (en) | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
US5089442A (en) | 1990-09-20 | 1992-02-18 | At&T Bell Laboratories | Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd |
KR930011413B1 (ko) | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
US5549780A (en) | 1990-10-23 | 1996-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for plasma processing and apparatus for plasma processing |
JP2640174B2 (ja) | 1990-10-30 | 1997-08-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3206916B2 (ja) | 1990-11-28 | 2001-09-10 | 住友電気工業株式会社 | 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス |
US5578130A (en) | 1990-12-12 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for depositing a film |
US5314724A (en) | 1991-01-08 | 1994-05-24 | Fujitsu Limited | Process for forming silicon oxide film |
JP2697315B2 (ja) | 1991-01-23 | 1998-01-14 | 日本電気株式会社 | フッ素含有シリコン酸化膜の形成方法 |
JP2787142B2 (ja) | 1991-03-01 | 1998-08-13 | 上村工業 株式会社 | 無電解錫、鉛又はそれらの合金めっき方法 |
US5897751A (en) | 1991-03-11 | 1999-04-27 | Regents Of The University Of California | Method of fabricating boron containing coatings |
JP2920848B2 (ja) * | 1991-03-19 | 1999-07-19 | 東京エレクトロン株式会社 | シリコン層のエッチング方法 |
JPH04341568A (ja) | 1991-05-16 | 1992-11-27 | Toshiba Corp | 薄膜形成方法及び薄膜形成装置 |
DE69224640T2 (de) | 1991-05-17 | 1998-10-01 | Lam Res Corp | VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT |
JP2699695B2 (ja) | 1991-06-07 | 1998-01-19 | 日本電気株式会社 | 化学気相成長法 |
US5203911A (en) | 1991-06-24 | 1993-04-20 | Shipley Company Inc. | Controlled electroless plating |
US5279865A (en) | 1991-06-28 | 1994-01-18 | Digital Equipment Corporation | High throughput interlevel dielectric gap filling process |
US5240497A (en) | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
JPH05226480A (ja) | 1991-12-04 | 1993-09-03 | Nec Corp | 半導体装置の製造方法 |
US5290382A (en) | 1991-12-13 | 1994-03-01 | Hughes Aircraft Company | Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
US5352636A (en) | 1992-01-16 | 1994-10-04 | Applied Materials, Inc. | In situ method for cleaning silicon surface and forming layer thereon in same chamber |
JP3084497B2 (ja) | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
JP2773530B2 (ja) | 1992-04-15 | 1998-07-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2792335B2 (ja) | 1992-05-27 | 1998-09-03 | 日本電気株式会社 | 半導体装置の製造方法 |
US5252178A (en) | 1992-06-24 | 1993-10-12 | Texas Instruments Incorporated | Multi-zone plasma processing method and apparatus |
JP3688726B2 (ja) | 1992-07-17 | 2005-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
US5380560A (en) | 1992-07-28 | 1995-01-10 | International Business Machines Corporation | Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition |
US5271972A (en) | 1992-08-17 | 1993-12-21 | Applied Materials, Inc. | Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity |
US5306530A (en) | 1992-11-23 | 1994-04-26 | Associated Universities, Inc. | Method for producing high quality thin layer films on substrates |
KR100238629B1 (ko) | 1992-12-17 | 2000-01-15 | 히가시 데쓰로 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
US5500249A (en) | 1992-12-22 | 1996-03-19 | Applied Materials, Inc. | Uniform tungsten silicide films produced by chemical vapor deposition |
US5756402A (en) | 1992-12-28 | 1998-05-26 | Kabushiki Kaisha Toshiba | Method of etching silicon nitride film |
US5624582A (en) | 1993-01-21 | 1997-04-29 | Vlsi Technology, Inc. | Optimization of dry etching through the control of helium backside pressure |
US5345999A (en) | 1993-03-17 | 1994-09-13 | Applied Materials, Inc. | Method and apparatus for cooling semiconductor wafers |
US5302233A (en) | 1993-03-19 | 1994-04-12 | Micron Semiconductor, Inc. | Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP) |
JP3236111B2 (ja) | 1993-03-31 | 2001-12-10 | キヤノン株式会社 | プラズマ処理装置及び処理方法 |
US5800686A (en) | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
JP2664866B2 (ja) | 1993-04-09 | 1997-10-22 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 窒化ホウ素をエッチングする方法 |
US5416048A (en) | 1993-04-16 | 1995-05-16 | Micron Semiconductor, Inc. | Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage |
US5591269A (en) | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
US5560779A (en) | 1993-07-12 | 1996-10-01 | Olin Corporation | Apparatus for synthesizing diamond films utilizing an arc plasma |
WO1995002900A1 (en) | 1993-07-15 | 1995-01-26 | Astarix, Inc. | Aluminum-palladium alloy for initiation of electroless plating |
EP0637063B1 (en) | 1993-07-30 | 1999-11-03 | Applied Materials, Inc. | Method for depositing silicon nitride on silicium surfaces |
US5483920A (en) | 1993-08-05 | 1996-01-16 | Board Of Governors Of Wayne State University | Method of forming cubic boron nitride films |
US5468597A (en) | 1993-08-25 | 1995-11-21 | Shipley Company, L.L.C. | Selective metallization process |
US5384284A (en) | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
SE501888C2 (sv) | 1993-10-18 | 1995-06-12 | Ladislav Bardos | En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden |
US5505816A (en) | 1993-12-16 | 1996-04-09 | International Business Machines Corporation | Etching of silicon dioxide selectively to silicon nitride and polysilicon |
JPH07193214A (ja) | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | バイアホール及びその形成方法 |
US5415890A (en) | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5403434A (en) | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
US5451259A (en) | 1994-02-17 | 1995-09-19 | Krogh; Ole D. | ECR plasma source for remote processing |
US5439553A (en) | 1994-03-30 | 1995-08-08 | Penn State Research Foundation | Controlled etching of oxides via gas phase reactions |
US5468342A (en) | 1994-04-28 | 1995-11-21 | Cypress Semiconductor Corp. | Method of etching an oxide layer |
US5531835A (en) | 1994-05-18 | 1996-07-02 | Applied Materials, Inc. | Patterned susceptor to reduce electrostatic force in a CVD chamber |
JPH07335612A (ja) * | 1994-06-13 | 1995-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US5767373A (en) | 1994-06-16 | 1998-06-16 | Novartis Finance Corporation | Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms |
EP0697467A1 (en) | 1994-07-21 | 1996-02-21 | Applied Materials, Inc. | Method and apparatus for cleaning a deposition chamber |
US5563105A (en) | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5683538A (en) * | 1994-12-23 | 1997-11-04 | International Business Machines Corporation | Control of etch selectivity |
US5571576A (en) | 1995-02-10 | 1996-11-05 | Watkins-Johnson | Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition |
US6039851A (en) | 1995-03-22 | 2000-03-21 | Micron Technology, Inc. | Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines |
US5571577A (en) | 1995-04-07 | 1996-11-05 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
US20010028922A1 (en) | 1995-06-07 | 2001-10-11 | Sandhu Gurtej S. | High throughput ILD fill process for high aspect ratio gap fill |
JP2814370B2 (ja) | 1995-06-18 | 1998-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6197364B1 (en) | 1995-08-22 | 2001-03-06 | International Business Machines Corporation | Production of electroless Co(P) with designed coercivity |
US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
AU6962196A (en) | 1995-09-01 | 1997-03-27 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
US6228751B1 (en) | 1995-09-08 | 2001-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US5719085A (en) | 1995-09-29 | 1998-02-17 | Intel Corporation | Shallow trench isolation technique |
US5716506A (en) | 1995-10-06 | 1998-02-10 | Board Of Trustees Of The University Of Illinois | Electrochemical sensors for gas detection |
JPH09106899A (ja) | 1995-10-11 | 1997-04-22 | Anelva Corp | プラズマcvd装置及び方法並びにドライエッチング装置及び方法 |
US5910340A (en) | 1995-10-23 | 1999-06-08 | C. Uyemura & Co., Ltd. | Electroless nickel plating solution and method |
US6015724A (en) | 1995-11-02 | 2000-01-18 | Semiconductor Energy Laboratory Co. | Manufacturing method of a semiconductor device |
US5599740A (en) | 1995-11-16 | 1997-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deposit-etch-deposit ozone/teos insulator layer method |
US5648125A (en) | 1995-11-16 | 1997-07-15 | Cane; Frank N. | Electroless plating process for the manufacture of printed circuit boards |
US5846598A (en) | 1995-11-30 | 1998-12-08 | International Business Machines Corporation | Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating |
US5733816A (en) | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US6261637B1 (en) | 1995-12-15 | 2001-07-17 | Enthone-Omi, Inc. | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication |
JPH11510219A (ja) | 1995-12-19 | 1999-09-07 | エフエスアイ インターナショナル インコーポレイテッド | スプレー・プロセッサを用いる金属膜の無電解めっき |
DE69623651T2 (de) | 1995-12-27 | 2003-04-24 | Lam Research Corp., Fremont | Verfahren zur füllung von gräben auf einer halbleiterscheibe |
US5679606A (en) | 1995-12-27 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | method of forming inter-metal-dielectric structure |
US6191026B1 (en) | 1996-01-09 | 2001-02-20 | Applied Materials, Inc. | Method for submicron gap filling on a semiconductor substrate |
US5891513A (en) | 1996-01-16 | 1999-04-06 | Cornell Research Foundation | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications |
US5824599A (en) | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US5674787A (en) | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
US5872052A (en) | 1996-02-12 | 1999-02-16 | Micron Technology, Inc. | Planarization using plasma oxidized amorphous silicon |
US5648175A (en) | 1996-02-14 | 1997-07-15 | Applied Materials, Inc. | Chemical vapor deposition reactor system and integrated circuit |
US5656093A (en) | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
CA2250410C (en) | 1996-03-25 | 2003-06-10 | S. George Lesinski | Attaching an implantable hearing aid microactuator |
US5858876A (en) | 1996-04-01 | 1999-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer |
US5712185A (en) | 1996-04-23 | 1998-01-27 | United Microelectronics | Method for forming shallow trench isolation |
US6313035B1 (en) | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US6048798A (en) | 1996-06-05 | 2000-04-11 | Lam Research Corporation | Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer |
US5846332A (en) | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
US5993916A (en) | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
US6170428B1 (en) | 1996-07-15 | 2001-01-09 | Applied Materials, Inc. | Symmetric tunable inductively coupled HDP-CVD reactor |
US5781693A (en) | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US20010012700A1 (en) | 1998-12-15 | 2001-08-09 | Klaus F. Schuegraf | Semiconductor processing methods of chemical vapor depositing sio2 on a substrate |
US5661093A (en) | 1996-09-12 | 1997-08-26 | Applied Materials, Inc. | Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
US5888906A (en) | 1996-09-16 | 1999-03-30 | Micron Technology, Inc. | Plasmaless dry contact cleaning method using interhalogen compounds |
US5747373A (en) | 1996-09-24 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Nitride-oxide sidewall spacer for salicide formation |
US5846375A (en) | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US5904827A (en) | 1996-10-15 | 1999-05-18 | Reynolds Tech Fabricators, Inc. | Plating cell with rotary wiper and megasonic transducer |
US5951776A (en) | 1996-10-25 | 1999-09-14 | Applied Materials, Inc. | Self aligning lift mechanism |
KR100237825B1 (ko) | 1996-11-05 | 2000-01-15 | 윤종용 | 반도체장치 제조설비의 페디스탈 |
US5804259A (en) | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US5935334A (en) | 1996-11-13 | 1999-08-10 | Applied Materials, Inc. | Substrate processing apparatus with bottom-mounted remote plasma system |
US5812403A (en) | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5939831A (en) | 1996-11-13 | 1999-08-17 | Applied Materials, Inc. | Methods and apparatus for pre-stabilized plasma generation for microwave clean applications |
US5882786A (en) | 1996-11-15 | 1999-03-16 | C3, Inc. | Gemstones formed of silicon carbide with diamond coating |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US6152070A (en) | 1996-11-18 | 2000-11-28 | Applied Materials, Inc. | Tandem process chamber |
US5830805A (en) | 1996-11-18 | 1998-11-03 | Cornell Research Foundation | Electroless deposition equipment or apparatus and method of performing electroless deposition |
US5695810A (en) | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
FR2756663B1 (fr) | 1996-12-04 | 1999-02-26 | Berenguer Marc | Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface |
US5843538A (en) | 1996-12-09 | 1998-12-01 | John L. Raymond | Method for electroless nickel plating of metal substrates |
US5953635A (en) | 1996-12-19 | 1999-09-14 | Intel Corporation | Interlayer dielectric with a composite dielectric stack |
US5913140A (en) | 1996-12-23 | 1999-06-15 | Lam Research Corporation | Method for reduction of plasma charging damage during chemical vapor deposition |
DE19700231C2 (de) | 1997-01-07 | 2001-10-04 | Geesthacht Gkss Forschung | Vorrichtung zum Filtern und Trennen von Strömungsmedien |
US5913147A (en) | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
JPH10223608A (ja) | 1997-02-04 | 1998-08-21 | Sony Corp | 半導体装置の製造方法 |
US5800621A (en) | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6013584A (en) | 1997-02-19 | 2000-01-11 | Applied Materials, Inc. | Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications |
US6479373B2 (en) | 1997-02-20 | 2002-11-12 | Infineon Technologies Ag | Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases |
US6190233B1 (en) | 1997-02-20 | 2001-02-20 | Applied Materials, Inc. | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks |
US5990000A (en) | 1997-02-20 | 1999-11-23 | Applied Materials, Inc. | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks |
US6059643A (en) | 1997-02-21 | 2000-05-09 | Aplex, Inc. | Apparatus and method for polishing a flat surface using a belted polishing pad |
US5789300A (en) | 1997-02-25 | 1998-08-04 | Advanced Micro Devices, Inc. | Method of making IGFETs in densely and sparsely populated areas of a substrate |
US5850105A (en) | 1997-03-21 | 1998-12-15 | Advanced Micro Devices, Inc. | Substantially planar semiconductor topography using dielectrics and chemical mechanical polish |
US5786276A (en) | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
US6030666A (en) | 1997-03-31 | 2000-02-29 | Lam Research Corporation | Method for microwave plasma substrate heating |
US5968610A (en) | 1997-04-02 | 1999-10-19 | United Microelectronics Corp. | Multi-step high density plasma chemical vapor deposition process |
US6204200B1 (en) | 1997-05-05 | 2001-03-20 | Texas Instruments Incorporated | Process scheme to form controlled airgaps between interconnect lines to reduce capacitance |
US6149828A (en) | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US5969422A (en) | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
US6083344A (en) | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US5838055A (en) | 1997-05-29 | 1998-11-17 | International Business Machines Corporation | Trench sidewall patterned by vapor phase etching |
US6189483B1 (en) | 1997-05-29 | 2001-02-20 | Applied Materials, Inc. | Process kit |
US6136685A (en) | 1997-06-03 | 2000-10-24 | Applied Materials, Inc. | High deposition rate recipe for low dielectric constant films |
US5937323A (en) | 1997-06-03 | 1999-08-10 | Applied Materials, Inc. | Sequencing of the recipe steps for the optimal low-k HDP-CVD processing |
US6706334B1 (en) | 1997-06-04 | 2004-03-16 | Tokyo Electron Limited | Processing method and apparatus for removing oxide film |
US5872058A (en) | 1997-06-17 | 1999-02-16 | Novellus Systems, Inc. | High aspect ratio gapfill process by using HDP |
US5885749A (en) | 1997-06-20 | 1999-03-23 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of layer interconnect material |
US5933757A (en) | 1997-06-23 | 1999-08-03 | Lsi Logic Corporation | Etch process selective to cobalt silicide for formation of integrated circuit structures |
US6150628A (en) | 1997-06-26 | 2000-11-21 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
US6518155B1 (en) | 1997-06-30 | 2003-02-11 | Intel Corporation | Device structure and method for reducing silicide encroachment |
US6364957B1 (en) | 1997-10-09 | 2002-04-02 | Applied Materials, Inc. | Support assembly with thermal expansion compensation |
GB9722028D0 (en) | 1997-10-17 | 1997-12-17 | Shipley Company Ll C | Plating of polymers |
US6379575B1 (en) | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6013191A (en) | 1997-10-27 | 2000-01-11 | Advanced Refractory Technologies, Inc. | Method of polishing CVD diamond films by oxygen plasma |
US6136693A (en) | 1997-10-27 | 2000-10-24 | Chartered Semiconductor Manufacturing Ltd. | Method for planarized interconnect vias using electroless plating and CMP |
US6063712A (en) | 1997-11-25 | 2000-05-16 | Micron Technology, Inc. | Oxide etch and method of etching |
US5849639A (en) | 1997-11-26 | 1998-12-15 | Lucent Technologies Inc. | Method for removing etching residues and contaminants |
US6077780A (en) | 1997-12-03 | 2000-06-20 | Advanced Micro Devices, Inc. | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure |
US5976327A (en) | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
US6143476A (en) | 1997-12-12 | 2000-11-07 | Applied Materials Inc | Method for high temperature etching of patterned layers using an organic mask stack |
US6406759B1 (en) | 1998-01-08 | 2002-06-18 | The University Of Tennessee Research Corporation | Remote exposure of workpieces using a recirculated plasma |
JPH11204442A (ja) | 1998-01-12 | 1999-07-30 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
US6140234A (en) | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
US5932077A (en) | 1998-02-09 | 1999-08-03 | Reynolds Tech Fabricators, Inc. | Plating cell with horizontal product load mechanism |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
US6340435B1 (en) | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6627532B1 (en) | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6197688B1 (en) | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
US6171661B1 (en) | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
US5920792A (en) | 1998-03-19 | 1999-07-06 | Winbond Electronics Corp | High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers |
US6197181B1 (en) | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
US6194038B1 (en) | 1998-03-20 | 2001-02-27 | Applied Materials, Inc. | Method for deposition of a conformal layer on a substrate |
US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6602434B1 (en) | 1998-03-27 | 2003-08-05 | Applied Materials, Inc. | Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window |
US6395150B1 (en) | 1998-04-01 | 2002-05-28 | Novellus Systems, Inc. | Very high aspect ratio gapfill using HDP |
EP1070346A1 (en) | 1998-04-02 | 2001-01-24 | Applied Materials, Inc. | Method for etching low k dielectrics |
US6117245A (en) | 1998-04-08 | 2000-09-12 | Applied Materials, Inc. | Method and apparatus for controlling cooling and heating fluids for a gas distribution plate |
US6113771A (en) | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
US6416647B1 (en) | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
US6179924B1 (en) | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
US6093594A (en) | 1998-04-29 | 2000-07-25 | Advanced Micro Devices, Inc. | CMOS optimization method utilizing sacrificial sidewall spacer |
US6030881A (en) | 1998-05-05 | 2000-02-29 | Novellus Systems, Inc. | High throughput chemical vapor deposition process capable of filling high aspect ratio structures |
EP0959496B1 (en) | 1998-05-22 | 2006-07-19 | Applied Materials, Inc. | Methods for forming self-planarized dielectric layer for shallow trench isolation |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100296137B1 (ko) | 1998-06-16 | 2001-08-07 | 박종섭 | 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법 |
JP2000012514A (ja) | 1998-06-19 | 2000-01-14 | Hitachi Ltd | 後処理方法 |
US6147009A (en) | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
US6562128B1 (en) | 2001-11-28 | 2003-05-13 | Seh America, Inc. | In-situ post epitaxial treatment process |
ATE316426T1 (de) | 1998-06-30 | 2006-02-15 | Semitool Inc | Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen |
US6037018A (en) | 1998-07-01 | 2000-03-14 | Taiwan Semiconductor Maufacturing Company | Shallow trench isolation filled by high density plasma chemical vapor deposition |
US6248429B1 (en) | 1998-07-06 | 2001-06-19 | Micron Technology, Inc. | Metallized recess in a substrate |
US6063683A (en) | 1998-07-27 | 2000-05-16 | Acer Semiconductor Manufacturing, Inc. | Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells |
US6436816B1 (en) | 1998-07-31 | 2002-08-20 | Industrial Technology Research Institute | Method of electroless plating copper on nitride barrier |
US6074954A (en) | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
US6383951B1 (en) | 1998-09-03 | 2002-05-07 | Micron Technology, Inc. | Low dielectric constant material for integrated circuit fabrication |
US6440863B1 (en) | 1998-09-04 | 2002-08-27 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming patterned oxygen containing plasma etchable layer |
US6165912A (en) | 1998-09-17 | 2000-12-26 | Cfmt, Inc. | Electroless metal deposition of electronic components in an enclosable vessel |
US6037266A (en) | 1998-09-28 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company | Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher |
US6180523B1 (en) | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6228758B1 (en) | 1998-10-14 | 2001-05-08 | Advanced Micro Devices, Inc. | Method of making dual damascene conductive interconnections and integrated circuit device comprising same |
US6251802B1 (en) | 1998-10-19 | 2001-06-26 | Micron Technology, Inc. | Methods of forming carbon-containing layers |
US6107199A (en) | 1998-10-24 | 2000-08-22 | International Business Machines Corporation | Method for improving the morphology of refractory metal thin films |
JP3064268B2 (ja) | 1998-10-29 | 2000-07-12 | アプライド マテリアルズ インコーポレイテッド | 成膜方法及び装置 |
US6176198B1 (en) | 1998-11-02 | 2001-01-23 | Applied Materials, Inc. | Apparatus and method for depositing low K dielectric materials |
US6462371B1 (en) | 1998-11-24 | 2002-10-08 | Micron Technology Inc. | Films doped with carbon for use in integrated circuit technology |
US6203863B1 (en) | 1998-11-27 | 2001-03-20 | United Microelectronics Corp. | Method of gap filling |
US6228233B1 (en) | 1998-11-30 | 2001-05-08 | Applied Materials, Inc. | Inflatable compliant bladder assembly |
US6258220B1 (en) | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6251236B1 (en) | 1998-11-30 | 2001-06-26 | Applied Materials, Inc. | Cathode contact ring for electrochemical deposition |
US6015747A (en) | 1998-12-07 | 2000-01-18 | Advanced Micro Device | Method of metal/polysilicon gate formation in a field effect transistor |
US6242349B1 (en) | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
US6364954B2 (en) | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
EP1014434B1 (de) | 1998-12-24 | 2008-03-26 | ATMEL Germany GmbH | Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches |
KR20000044928A (ko) | 1998-12-30 | 2000-07-15 | 김영환 | 반도체 소자의 트랜치 형성 방법 |
TW428256B (en) | 1999-01-25 | 2001-04-01 | United Microelectronics Corp | Structure of conducting-wire layer and its fabricating method |
US6245669B1 (en) | 1999-02-05 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | High selectivity Si-rich SiON etch-stop layer |
US6010962A (en) | 1999-02-12 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company | Copper chemical-mechanical-polishing (CMP) dishing |
US6245670B1 (en) | 1999-02-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure |
US6136163A (en) | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
US6312995B1 (en) | 1999-03-08 | 2001-11-06 | Advanced Micro Devices, Inc. | MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration |
US6197705B1 (en) | 1999-03-18 | 2001-03-06 | Chartered Semiconductor Manufacturing Ltd. | Method of silicon oxide and silicon glass films deposition |
US6144099A (en) | 1999-03-30 | 2000-11-07 | Advanced Micro Devices, Inc. | Semiconductor metalization barrier |
US6238582B1 (en) | 1999-03-30 | 2001-05-29 | Veeco Instruments, Inc. | Reactive ion beam etching method and a thin film head fabricated using the method |
US6099697A (en) | 1999-04-13 | 2000-08-08 | Applied Materials, Inc. | Method of and apparatus for restoring a support surface in a semiconductor wafer processing system |
US6110836A (en) | 1999-04-22 | 2000-08-29 | Applied Materials, Inc. | Reactive plasma etch cleaning of high aspect ratio openings |
US6541671B1 (en) | 2002-02-13 | 2003-04-01 | The Regents Of The University Of California | Synthesis of 2H- and 13C-substituted dithanes |
JP3099066B1 (ja) | 1999-05-07 | 2000-10-16 | 東京工業大学長 | 薄膜構造体の製造方法 |
US6323128B1 (en) | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
US6174812B1 (en) | 1999-06-08 | 2001-01-16 | United Microelectronics Corp. | Copper damascene technology for ultra large scale integration circuits |
US20020033233A1 (en) | 1999-06-08 | 2002-03-21 | Stephen E. Savas | Icp reactor having a conically-shaped plasma-generating section |
US6821571B2 (en) | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6110530A (en) | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
US6277752B1 (en) | 1999-06-28 | 2001-08-21 | Taiwan Semiconductor Manufacturing Company | Multiple etch method for forming residue free patterned hard mask layer |
US6258223B1 (en) | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6516815B1 (en) | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6351013B1 (en) | 1999-07-13 | 2002-02-26 | Advanced Micro Devices, Inc. | Low-K sub spacer pocket formation for gate capacitance reduction |
US6342733B1 (en) | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
US6235643B1 (en) | 1999-08-10 | 2001-05-22 | Applied Materials, Inc. | Method for etching a trench having rounded top and bottom corners in a silicon substrate |
US6375748B1 (en) | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
US6441492B1 (en) | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
US6503843B1 (en) | 1999-09-21 | 2003-01-07 | Applied Materials, Inc. | Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6287643B1 (en) | 1999-09-30 | 2001-09-11 | Novellus Systems, Inc. | Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor |
US6153935A (en) | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
US6364949B1 (en) | 1999-10-19 | 2002-04-02 | Applied Materials, Inc. | 300 mm CVD chamber design for metal-organic thin film deposition |
KR100338768B1 (ko) | 1999-10-25 | 2002-05-30 | 윤종용 | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 |
US20010041444A1 (en) | 1999-10-29 | 2001-11-15 | Jeffrey A. Shields | Tin contact barc for tungsten polished contacts |
US6551924B1 (en) | 1999-11-02 | 2003-04-22 | International Business Machines Corporation | Post metalization chem-mech polishing dielectric etch |
KR20010051575A (ko) | 1999-11-09 | 2001-06-25 | 조셉 제이. 스위니 | 살리사이드 처리를 위한 화학적 플라즈마 세정 |
TW484170B (en) | 1999-11-30 | 2002-04-21 | Applied Materials Inc | Integrated modular processing platform |
US6342453B1 (en) | 1999-12-03 | 2002-01-29 | Applied Materials, Inc. | Method for CVD process control for enhancing device performance |
US6238513B1 (en) | 1999-12-28 | 2001-05-29 | International Business Machines Corporation | Wafer lift assembly |
KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
US6772827B2 (en) | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6656831B1 (en) | 2000-01-26 | 2003-12-02 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of a metal nitride layer |
US6494959B1 (en) | 2000-01-28 | 2002-12-17 | Applied Materials, Inc. | Process and apparatus for cleaning a silicon surface |
US6743473B1 (en) | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6350320B1 (en) | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
US6319766B1 (en) | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
US6391788B1 (en) | 2000-02-25 | 2002-05-21 | Applied Materials, Inc. | Two etchant etch method |
JP3979791B2 (ja) | 2000-03-08 | 2007-09-19 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US6527968B1 (en) | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
JP2001355074A (ja) | 2000-04-10 | 2001-12-25 | Sony Corp | 無電解メッキ処理方法およびその装置 |
US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
JP2001308023A (ja) | 2000-04-21 | 2001-11-02 | Tokyo Electron Ltd | 熱処理装置及び方法 |
US6387207B1 (en) | 2000-04-28 | 2002-05-14 | Applied Materials, Inc. | Integration of remote plasma generator with semiconductor processing chamber |
US6679981B1 (en) | 2000-05-11 | 2004-01-20 | Applied Materials, Inc. | Inductive plasma loop enhancing magnetron sputtering |
US6335261B1 (en) | 2000-05-31 | 2002-01-01 | International Business Machines Corporation | Directional CVD process with optimized etchback |
US6603269B1 (en) | 2000-06-13 | 2003-08-05 | Applied Materials, Inc. | Resonant chamber applicator for remote plasma source |
US6645550B1 (en) | 2000-06-22 | 2003-11-11 | Applied Materials, Inc. | Method of treating a substrate |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6794311B2 (en) | 2000-07-14 | 2004-09-21 | Applied Materials Inc. | Method and apparatus for treating low k dielectric layers to reduce diffusion |
KR100366623B1 (ko) | 2000-07-18 | 2003-01-09 | 삼성전자 주식회사 | 반도체 기판 또는 lcd 기판의 세정방법 |
US6764958B1 (en) | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6677242B1 (en) | 2000-08-12 | 2004-01-13 | Applied Materials Inc. | Integrated shallow trench isolation approach |
US6446572B1 (en) | 2000-08-18 | 2002-09-10 | Tokyo Electron Limited | Embedded plasma source for plasma density improvement |
US6800830B2 (en) | 2000-08-18 | 2004-10-05 | Hitachi Kokusai Electric, Inc. | Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication |
US6335288B1 (en) | 2000-08-24 | 2002-01-01 | Applied Materials, Inc. | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD |
US6372657B1 (en) | 2000-08-31 | 2002-04-16 | Micron Technology, Inc. | Method for selective etching of oxides |
US6465366B1 (en) | 2000-09-12 | 2002-10-15 | Applied Materials, Inc. | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
JP2002100578A (ja) | 2000-09-25 | 2002-04-05 | Crystage Co Ltd | 薄膜形成装置 |
KR100375102B1 (ko) | 2000-10-18 | 2003-03-08 | 삼성전자주식회사 | 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치 |
US6403491B1 (en) | 2000-11-01 | 2002-06-11 | Applied Materials, Inc. | Etch method using a dielectric etch chamber with expanded process window |
US6610362B1 (en) | 2000-11-20 | 2003-08-26 | Intel Corporation | Method of forming a carbon doped oxide layer on a substrate |
KR100382725B1 (ko) | 2000-11-24 | 2003-05-09 | 삼성전자주식회사 | 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법 |
US6291348B1 (en) | 2000-11-30 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed |
US6544340B2 (en) | 2000-12-08 | 2003-04-08 | Applied Materials, Inc. | Heater with detachable ceramic top plate |
US6448537B1 (en) | 2000-12-11 | 2002-09-10 | Eric Anton Nering | Single-wafer process chamber thermal convection processes |
US20020124867A1 (en) | 2001-01-08 | 2002-09-12 | Apl Co., Ltd. | Apparatus and method for surface cleaning using plasma |
US6879981B2 (en) | 2001-01-16 | 2005-04-12 | Corigin Ltd. | Sharing live data with a non cooperative DBMS |
US6743732B1 (en) | 2001-01-26 | 2004-06-01 | Taiwan Semiconductor Manufacturing Company | Organic low K dielectric etch with NH3 chemistry |
JP2002222934A (ja) | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
US6893969B2 (en) | 2001-02-12 | 2005-05-17 | Lam Research Corporation | Use of ammonia for etching organic low-k dielectrics |
US6537733B2 (en) | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
JP2002256235A (ja) | 2001-03-01 | 2002-09-11 | Hitachi Chem Co Ltd | 接着シート、半導体装置の製造方法および半導体装置 |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
CN1302152C (zh) | 2001-03-19 | 2007-02-28 | 株式会社Ips | 化学气相沉积设备 |
JP5013353B2 (ja) | 2001-03-28 | 2012-08-29 | 隆 杉野 | 成膜方法及び成膜装置 |
US6670278B2 (en) | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
US7084070B1 (en) | 2001-03-30 | 2006-08-01 | Lam Research Corporation | Treatment for corrosion in substrate processing |
US20020177321A1 (en) | 2001-03-30 | 2002-11-28 | Li Si Yi | Plasma etching of silicon carbide |
JP3707394B2 (ja) | 2001-04-06 | 2005-10-19 | ソニー株式会社 | 無電解メッキ方法 |
US20030019428A1 (en) | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US6740601B2 (en) | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
JP4720019B2 (ja) | 2001-05-18 | 2011-07-13 | 東京エレクトロン株式会社 | 冷却機構及び処理装置 |
US20020197823A1 (en) | 2001-05-18 | 2002-12-26 | Yoo Jae-Yoon | Isolation method for semiconductor device |
US6717189B2 (en) | 2001-06-01 | 2004-04-06 | Ebara Corporation | Electroless plating liquid and semiconductor device |
WO2002103782A2 (en) | 2001-06-14 | 2002-12-27 | Mattson Technology, Inc. | Barrier enhancement process for copper interconnects |
US6506291B2 (en) | 2001-06-14 | 2003-01-14 | Applied Materials, Inc. | Substrate support with multilevel heat transfer mechanism |
US6573606B2 (en) | 2001-06-14 | 2003-06-03 | International Business Machines Corporation | Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect |
JP2003019433A (ja) | 2001-07-06 | 2003-01-21 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
KR100403630B1 (ko) | 2001-07-07 | 2003-10-30 | 삼성전자주식회사 | 고밀도 플라즈마를 이용한 반도체 장치의 층간 절연막 형성방법 |
US6531377B2 (en) | 2001-07-13 | 2003-03-11 | Infineon Technologies Ag | Method for high aspect ratio gap fill using sequential HDP-CVD |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6846745B1 (en) | 2001-08-03 | 2005-01-25 | Novellus Systems, Inc. | High-density plasma process for filling high aspect ratio structures |
US6596654B1 (en) | 2001-08-24 | 2003-07-22 | Novellus Systems, Inc. | Gap fill for high aspect ratio structures |
JP3914452B2 (ja) | 2001-08-07 | 2007-05-16 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
CN1329972C (zh) | 2001-08-13 | 2007-08-01 | 株式会社荏原制作所 | 半导体器件及其制造方法 |
US20030038305A1 (en) | 2001-08-21 | 2003-02-27 | Wasshuber Christoph A. | Method for manufacturing and structure of transistor with low-k spacer |
JP2003059914A (ja) | 2001-08-21 | 2003-02-28 | Hitachi Kokusai Electric Inc | プラズマ処理装置 |
US6753506B2 (en) | 2001-08-23 | 2004-06-22 | Axcelis Technologies | System and method of fast ambient switching for rapid thermal processing |
US6762127B2 (en) | 2001-08-23 | 2004-07-13 | Yves Pierre Boiteux | Etch process for dielectric materials comprising oxidized organo silane materials |
US20030129106A1 (en) | 2001-08-29 | 2003-07-10 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
US6796314B1 (en) | 2001-09-07 | 2004-09-28 | Novellus Systems, Inc. | Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process |
US6656837B2 (en) | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
AU2002301252B2 (en) | 2001-10-12 | 2007-12-20 | Bayer Aktiengesellschaft | Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production |
US20030072639A1 (en) | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
JP3759895B2 (ja) | 2001-10-24 | 2006-03-29 | 松下電器産業株式会社 | エッチング方法 |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
KR100443121B1 (ko) | 2001-11-29 | 2004-08-04 | 삼성전자주식회사 | 반도체 공정의 수행 방법 및 반도체 공정 장치 |
US6794290B1 (en) | 2001-12-03 | 2004-09-21 | Novellus Systems, Inc. | Method of chemical modification of structure topography |
US6905968B2 (en) | 2001-12-12 | 2005-06-14 | Applied Materials, Inc. | Process for selectively etching dielectric layers |
JP2006501634A (ja) | 2001-12-13 | 2006-01-12 | アプライド マテリアルズ インコーポレイテッド | 基板をエッチングするための方法及び装置 |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
US6605874B2 (en) | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
US20030116439A1 (en) | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices |
US20030116087A1 (en) | 2001-12-21 | 2003-06-26 | Nguyen Anh N. | Chamber hardware design for titanium nitride atomic layer deposition |
US20030124842A1 (en) | 2001-12-27 | 2003-07-03 | Applied Materials, Inc. | Dual-gas delivery system for chemical vapor deposition processes |
US6677247B2 (en) | 2002-01-07 | 2004-01-13 | Applied Materials Inc. | Method of increasing the etch selectivity of a contact sidewall to a preclean etchant |
US6827815B2 (en) | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
JP2003217898A (ja) | 2002-01-16 | 2003-07-31 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
US6869880B2 (en) | 2002-01-24 | 2005-03-22 | Applied Materials, Inc. | In situ application of etch back for improved deposition into high-aspect-ratio features |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US7138014B2 (en) | 2002-01-28 | 2006-11-21 | Applied Materials, Inc. | Electroless deposition apparatus |
US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
US7256370B2 (en) | 2002-03-15 | 2007-08-14 | Steed Technology, Inc. | Vacuum thermal annealer |
US6913651B2 (en) | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
US20030190426A1 (en) | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US6921556B2 (en) | 2002-04-12 | 2005-07-26 | Asm Japan K.K. | Method of film deposition using single-wafer-processing type CVD |
US6616967B1 (en) | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
US7013834B2 (en) | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
KR100448714B1 (ko) | 2002-04-24 | 2004-09-13 | 삼성전자주식회사 | 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법 |
US6528409B1 (en) | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
US6908862B2 (en) | 2002-05-03 | 2005-06-21 | Applied Materials, Inc. | HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features |
JP2003347278A (ja) | 2002-05-23 | 2003-12-05 | Hitachi Kokusai Electric Inc | 基板処理装置、及び半導体装置の製造方法 |
US6500728B1 (en) | 2002-05-24 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company | Shallow trench isolation (STI) module to improve contact etch process window |
US20030224217A1 (en) | 2002-05-31 | 2003-12-04 | Applied Materials, Inc. | Metal nitride formation |
KR100434110B1 (ko) | 2002-06-04 | 2004-06-04 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US6924191B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
WO2004006303A2 (en) | 2002-07-02 | 2004-01-15 | Applied Materials, Inc. | Method for fabricating an ultra shallow junction of a field effect transistor |
US6767844B2 (en) | 2002-07-03 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma chamber equipped with temperature-controlled focus ring and method of operating |
US20040033677A1 (en) | 2002-08-14 | 2004-02-19 | Reza Arghavani | Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier |
US7223701B2 (en) | 2002-09-06 | 2007-05-29 | Intel Corporation | In-situ sequential high density plasma deposition and etch processing for gap fill |
KR100500852B1 (ko) | 2002-10-10 | 2005-07-12 | 최대규 | 원격 플라즈마 발생기 |
US6991959B2 (en) | 2002-10-10 | 2006-01-31 | Asm Japan K.K. | Method of manufacturing silicon carbide film |
JP4606713B2 (ja) | 2002-10-17 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US6699380B1 (en) | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
US7628897B2 (en) | 2002-10-23 | 2009-12-08 | Applied Materials, Inc. | Reactive ion etching for semiconductor device feature topography modification |
US6802944B2 (en) | 2002-10-23 | 2004-10-12 | Applied Materials, Inc. | High density plasma CVD process for gapfill into high aspect ratio features |
US6713873B1 (en) | 2002-11-27 | 2004-03-30 | Intel Corporation | Adhesion between dielectric materials |
US6858532B2 (en) | 2002-12-10 | 2005-02-22 | International Business Machines Corporation | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
JP3838969B2 (ja) | 2002-12-17 | 2006-10-25 | 沖電気工業株式会社 | ドライエッチング方法 |
US6720213B1 (en) | 2003-01-15 | 2004-04-13 | International Business Machines Corporation | Low-K gate spacers by fluorine implantation |
US6808748B2 (en) | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
KR101352995B1 (ko) | 2003-02-14 | 2014-01-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 수소-함유 라디칼을 이용한 자연 산화물 세정 |
US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
US6951821B2 (en) | 2003-03-17 | 2005-10-04 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
US20040182315A1 (en) | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Reduced maintenance chemical oxide removal (COR) processing system |
US7126225B2 (en) | 2003-04-15 | 2006-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling |
US6942753B2 (en) | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
US20040211357A1 (en) | 2003-04-24 | 2004-10-28 | Gadgil Pradad N. | Method of manufacturing a gap-filled structure of a semiconductor device |
US6830624B2 (en) | 2003-05-02 | 2004-12-14 | Applied Materials, Inc. | Blocker plate by-pass for remote plasma clean |
US6903511B2 (en) | 2003-05-06 | 2005-06-07 | Zond, Inc. | Generation of uniformly-distributed plasma |
US7081414B2 (en) | 2003-05-23 | 2006-07-25 | Applied Materials, Inc. | Deposition-selective etch-deposition process for dielectric film gapfill |
US7205240B2 (en) | 2003-06-04 | 2007-04-17 | Applied Materials, Inc. | HDP-CVD multistep gapfill process |
US7151277B2 (en) | 2003-07-03 | 2006-12-19 | The Regents Of The University Of California | Selective etching of silicon carbide films |
JP2005033023A (ja) | 2003-07-07 | 2005-02-03 | Sony Corp | 半導体装置の製造方法および半導体装置 |
JP4245996B2 (ja) | 2003-07-07 | 2009-04-02 | 株式会社荏原製作所 | 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置 |
US7368392B2 (en) | 2003-07-10 | 2008-05-06 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
JP3866694B2 (ja) | 2003-07-30 | 2007-01-10 | 株式会社日立ハイテクノロジーズ | Lsiデバイスのエッチング方法および装置 |
US7256134B2 (en) | 2003-08-01 | 2007-08-14 | Applied Materials, Inc. | Selective etching of carbon-doped low-k dielectrics |
JP4239750B2 (ja) | 2003-08-13 | 2009-03-18 | セイコーエプソン株式会社 | マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ |
US20050035455A1 (en) | 2003-08-14 | 2005-02-17 | Chenming Hu | Device with low-k dielectric in close proximity thereto and its method of fabrication |
US7078312B1 (en) | 2003-09-02 | 2006-07-18 | Novellus Systems, Inc. | Method for controlling etch process repeatability |
US6903031B2 (en) | 2003-09-03 | 2005-06-07 | Applied Materials, Inc. | In-situ-etch-assisted HDP deposition using SiF4 and hydrogen |
US7030034B2 (en) | 2003-09-18 | 2006-04-18 | Micron Technology, Inc. | Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum |
US6967405B1 (en) | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
US7371688B2 (en) | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
KR101109299B1 (ko) | 2003-10-06 | 2012-01-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 페이스-업 습식 프로세싱을 위해 웨이퍼 온도 균일성을강화시키는 장치 |
US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US20070111519A1 (en) | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US7465358B2 (en) | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
JP2005129688A (ja) | 2003-10-23 | 2005-05-19 | Hitachi Ltd | 半導体装置の製造方法 |
US7709392B2 (en) | 2003-11-05 | 2010-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low K dielectric surface damage control |
US20050109276A1 (en) | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
US7202172B2 (en) | 2003-12-05 | 2007-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microelectronic device having disposable spacer |
US7081407B2 (en) | 2003-12-16 | 2006-07-25 | Lam Research Corporation | Method of preventing damage to porous low-k materials during resist stripping |
US6958286B2 (en) | 2004-01-02 | 2005-10-25 | International Business Machines Corporation | Method of preventing surface roughening during hydrogen prebake of SiGe substrates |
US6893967B1 (en) | 2004-01-13 | 2005-05-17 | Advanced Micro Devices, Inc. | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials |
US20060033678A1 (en) | 2004-01-26 | 2006-02-16 | Applied Materials, Inc. | Integrated electroless deposition system |
US7291550B2 (en) | 2004-02-13 | 2007-11-06 | Chartered Semiconductor Manufacturing Ltd. | Method to form a contact hole |
JP4698251B2 (ja) | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7780793B2 (en) | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
US20070123051A1 (en) | 2004-02-26 | 2007-05-31 | Reza Arghavani | Oxide etch with nh4-nf3 chemistry |
US20060051966A1 (en) | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
JP4879159B2 (ja) | 2004-03-05 | 2012-02-22 | アプライド マテリアルズ インコーポレイテッド | アモルファス炭素膜堆積のためのcvdプロセス |
US7196342B2 (en) | 2004-03-10 | 2007-03-27 | Cymer, Inc. | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source |
US7109521B2 (en) | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
US7582555B1 (en) | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US7115974B2 (en) | 2004-04-27 | 2006-10-03 | Taiwan Semiconductor Manfacturing Company, Ltd. | Silicon oxycarbide and silicon carbonitride based materials for MOS devices |
JP2007537602A (ja) | 2004-05-11 | 2007-12-20 | アプライド マテリアルズ インコーポレイテッド | フルオロカーボン化学エッチングにおけるh2添加物を使用しての炭素ドープ酸化ケイ素エッチング |
US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US8328939B2 (en) | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
CN100594619C (zh) | 2004-05-21 | 2010-03-17 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US7049200B2 (en) | 2004-05-25 | 2006-05-23 | Applied Materials Inc. | Method for forming a low thermal budget spacer |
US7122949B2 (en) | 2004-06-21 | 2006-10-17 | Neocera, Inc. | Cylindrical electron beam generating/triggering device and method for generation of electrons |
JP2006049817A (ja) | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
US7217626B2 (en) | 2004-07-26 | 2007-05-15 | Texas Instruments Incorporated | Transistor fabrication methods using dual sidewall spacers |
US7192863B2 (en) | 2004-07-30 | 2007-03-20 | Texas Instruments Incorporated | Method of eliminating etch ridges in a dual damascene process |
US7329576B2 (en) | 2004-09-02 | 2008-02-12 | Micron Technology, Inc. | Double-sided container capacitors using a sacrificial layer |
US7390710B2 (en) | 2004-09-02 | 2008-06-24 | Micron Technology, Inc. | Protection of tunnel dielectric using epitaxial silicon |
US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US20060093756A1 (en) | 2004-11-03 | 2006-05-04 | Nagarajan Rajagopalan | High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films |
US20060130971A1 (en) | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
EP1831430A2 (en) | 2004-12-21 | 2007-09-12 | Applied Materials, Inc. | An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20060148243A1 (en) | 2004-12-30 | 2006-07-06 | Jeng-Ho Wang | Method for fabricating a dual damascene and polymer removal |
US7253123B2 (en) | 2005-01-10 | 2007-08-07 | Applied Materials, Inc. | Method for producing gate stack sidewall spacers |
US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
JP4475136B2 (ja) | 2005-02-18 | 2010-06-09 | 東京エレクトロン株式会社 | 処理システム、前処理装置及び記憶媒体 |
JP4506677B2 (ja) | 2005-03-11 | 2010-07-21 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
US7253118B2 (en) | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US7514353B2 (en) | 2005-03-18 | 2009-04-07 | Applied Materials, Inc. | Contact metallization scheme using a barrier layer over a silicide layer |
TW200734482A (en) | 2005-03-18 | 2007-09-16 | Applied Materials Inc | Electroless deposition process on a contact containing silicon or silicide |
US7611944B2 (en) | 2005-03-28 | 2009-11-03 | Micron Technology, Inc. | Integrated circuit fabrication |
US7442274B2 (en) | 2005-03-28 | 2008-10-28 | Tokyo Electron Limited | Plasma etching method and apparatus therefor |
KR100689826B1 (ko) | 2005-03-29 | 2007-03-08 | 삼성전자주식회사 | 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들 |
US7288482B2 (en) | 2005-05-04 | 2007-10-30 | International Business Machines Corporation | Silicon nitride etching methods |
KR100745067B1 (ko) | 2005-05-18 | 2007-08-01 | 주식회사 하이닉스반도체 | 반도체 소자의 트렌치 소자분리막 및 그 형성방법 |
WO2007035880A2 (en) | 2005-09-21 | 2007-03-29 | Applied Materials, Inc. | Method and apparatus for forming device features in an integrated electroless deposition system |
US7884032B2 (en) | 2005-10-28 | 2011-02-08 | Applied Materials, Inc. | Thin film deposition |
US20070099806A1 (en) | 2005-10-28 | 2007-05-03 | Stewart Michael P | Composition and method for selectively removing native oxide from silicon-containing surfaces |
US7696101B2 (en) | 2005-11-01 | 2010-04-13 | Micron Technology, Inc. | Process for increasing feature density during the manufacture of a semiconductor device |
US20070107750A1 (en) | 2005-11-14 | 2007-05-17 | Sawin Herbert H | Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers |
US7405160B2 (en) | 2005-12-13 | 2008-07-29 | Tokyo Electron Limited | Method of making semiconductor device |
JP2007173383A (ja) | 2005-12-20 | 2007-07-05 | Sharp Corp | トレンチ素子分離領域の形成方法、窒化シリコン膜ライナーの形成方法、半導体装置の製造方法 |
US7494545B2 (en) | 2006-02-03 | 2009-02-24 | Applied Materials, Inc. | Epitaxial deposition process and apparatus |
US7780865B2 (en) | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
JP5042517B2 (ja) | 2006-04-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2007311540A (ja) | 2006-05-18 | 2007-11-29 | Renesas Technology Corp | 半導体装置の製造方法 |
US20070281106A1 (en) | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
US7416989B1 (en) * | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
US20080124937A1 (en) | 2006-08-16 | 2008-05-29 | Songlin Xu | Selective etching method and apparatus |
JP2008103645A (ja) | 2006-10-20 | 2008-05-01 | Toshiba Corp | 半導体装置の製造方法 |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7700479B2 (en) | 2006-11-06 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning processes in the formation of integrated circuit interconnect structures |
US20080142483A1 (en) | 2006-12-07 | 2008-06-19 | Applied Materials, Inc. | Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills |
US7939422B2 (en) | 2006-12-07 | 2011-05-10 | Applied Materials, Inc. | Methods of thin film process |
US20100059889A1 (en) | 2006-12-20 | 2010-03-11 | Nxp, B.V. | Adhesion of diffusion barrier on copper-containing interconnect element |
US7808053B2 (en) | 2006-12-29 | 2010-10-05 | Intel Corporation | Method, apparatus, and system for flash memory |
KR100853485B1 (ko) | 2007-03-19 | 2008-08-21 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
US20080233709A1 (en) | 2007-03-22 | 2008-09-25 | Infineon Technologies North America Corp. | Method for removing material from a semiconductor |
JP5135879B2 (ja) | 2007-05-21 | 2013-02-06 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US8084105B2 (en) | 2007-05-23 | 2011-12-27 | Applied Materials, Inc. | Method of depositing boron nitride and boron nitride-derived materials |
US7807578B2 (en) | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
KR101050454B1 (ko) | 2007-07-02 | 2011-07-19 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 및 그 형성방법 |
US8008166B2 (en) | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US7871926B2 (en) | 2007-10-22 | 2011-01-18 | Applied Materials, Inc. | Methods and systems for forming at least one dielectric layer |
US8252696B2 (en) * | 2007-10-22 | 2012-08-28 | Applied Materials, Inc. | Selective etching of silicon nitride |
CN101999022A (zh) | 2007-12-04 | 2011-03-30 | 帕勒拜尔股份公司 | 多层的太阳能元件 |
US8187486B1 (en) * | 2007-12-13 | 2012-05-29 | Novellus Systems, Inc. | Modulating etch selectivity and etch rate of silicon nitride thin films |
JP2009170890A (ja) | 2007-12-18 | 2009-07-30 | Takashima & Co Ltd | 可撓性膜状太陽電池複層体 |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
US20090275206A1 (en) | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
US8372756B2 (en) * | 2008-08-29 | 2013-02-12 | Air Products And Chemicals, Inc. | Selective etching of silicon dioxide compositions |
US7709396B2 (en) | 2008-09-19 | 2010-05-04 | Applied Materials, Inc. | Integral patterning of large features along with array using spacer mask patterning process flow |
US7968441B2 (en) | 2008-10-08 | 2011-06-28 | Applied Materials, Inc. | Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage |
US8563090B2 (en) | 2008-10-16 | 2013-10-22 | Applied Materials, Inc. | Boron film interface engineering |
US7910491B2 (en) | 2008-10-16 | 2011-03-22 | Applied Materials, Inc. | Gapfill improvement with low etch rate dielectric liners |
US20100099263A1 (en) | 2008-10-20 | 2010-04-22 | Applied Materials, Inc. | Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects |
US8173547B2 (en) | 2008-10-23 | 2012-05-08 | Lam Research Corporation | Silicon etch with passivation using plasma enhanced oxidation |
US8058179B1 (en) | 2008-12-23 | 2011-11-15 | Novellus Systems, Inc. | Atomic layer removal process with higher etch amount |
JP2010154699A (ja) | 2008-12-26 | 2010-07-08 | Hitachi Ltd | 磁束可変型回転電機 |
US8193075B2 (en) | 2009-04-20 | 2012-06-05 | Applied Materials, Inc. | Remote hydrogen plasma with ion filter for terminating silicon dangling bonds |
US8211808B2 (en) | 2009-08-31 | 2012-07-03 | Applied Materials, Inc. | Silicon-selective dry etch for carbon-containing films |
US8202803B2 (en) | 2009-12-11 | 2012-06-19 | Tokyo Electron Limited | Method to remove capping layer of insulation dielectric in interconnect structures |
US20110151677A1 (en) | 2009-12-21 | 2011-06-23 | Applied Materials, Inc. | Wet oxidation process performed on a dielectric material formed from a flowable cvd process |
US8501629B2 (en) | 2009-12-23 | 2013-08-06 | Applied Materials, Inc. | Smooth SiConi etch for silicon-containing films |
JP5450187B2 (ja) | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
US8435902B2 (en) | 2010-03-17 | 2013-05-07 | Applied Materials, Inc. | Invertable pattern loading with dry etch |
US8475674B2 (en) | 2010-04-30 | 2013-07-02 | Applied Materials, Inc. | High-temperature selective dry etch having reduced post-etch solid residue |
US9324576B2 (en) * | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US20120009796A1 (en) | 2010-07-09 | 2012-01-12 | Applied Materials, Inc. | Post-ash sidewall healing |
US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US20120285621A1 (en) | 2011-05-10 | 2012-11-15 | Applied Materials, Inc. | Semiconductor chamber apparatus for dielectric processing |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US20130045605A1 (en) | 2011-08-18 | 2013-02-21 | Applied Materials, Inc. | Dry-etch for silicon-and-nitrogen-containing films |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
-
2012
- 2012-04-18 US US13/449,543 patent/US8679982B2/en not_active Expired - Fee Related
- 2012-08-06 WO PCT/US2012/049768 patent/WO2013032638A1/en active Application Filing
- 2012-08-06 CN CN201280040443.2A patent/CN103748666B/zh not_active Expired - Fee Related
- 2012-08-06 KR KR1020137002108A patent/KR101975236B1/ko active IP Right Grant
- 2012-08-08 TW TW101128647A patent/TWI541890B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20140065369A (ko) | 2014-05-29 |
WO2013032638A1 (en) | 2013-03-07 |
CN103748666B (zh) | 2016-05-25 |
CN103748666A (zh) | 2014-04-23 |
US8679982B2 (en) | 2014-03-25 |
TW201314768A (zh) | 2013-04-01 |
KR101975236B1 (ko) | 2019-05-07 |
US20130052827A1 (en) | 2013-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI541890B (zh) | 選擇性抑制含有矽及氧兩者之材料的乾式蝕刻速率 | |
TWI459464B (zh) | 選擇性抑制含有矽及氮兩者之材料的乾蝕刻率之方法 | |
TWI471932B (zh) | 用於含矽與氮之薄膜的乾式蝕刻 | |
TWI597775B (zh) | 差別氧化矽蝕刻 | |
US8765574B2 (en) | Dry etch process | |
JP6272873B2 (ja) | 炭窒化ケイ素の選択的エッチング | |
TWI601204B (zh) | 自由基成分的氧化物蝕刻 | |
TWI631614B (zh) | 氮化矽的選擇性蝕刻 | |
US9384997B2 (en) | Dry-etch selectivity | |
TWI625824B (zh) | 銅線間的氣隙 | |
US8771536B2 (en) | Dry-etch for silicon-and-carbon-containing films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |