FR2795555B1 - Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique - Google Patents

Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique

Info

Publication number
FR2795555B1
FR2795555B1 FR9908249A FR9908249A FR2795555B1 FR 2795555 B1 FR2795555 B1 FR 2795555B1 FR 9908249 A FR9908249 A FR 9908249A FR 9908249 A FR9908249 A FR 9908249A FR 2795555 B1 FR2795555 B1 FR 2795555B1
Authority
FR
France
Prior art keywords
silicon
layers
manufacturing
semiconductor device
device including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9908249A
Other languages
English (en)
Other versions
FR2795555A1 (fr
Inventor
Thomas Skotnicki
Malgorzata Jurczak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9908249A priority Critical patent/FR2795555B1/fr
Priority to PCT/FR2000/001798 priority patent/WO2001001496A1/fr
Priority to EP00946029A priority patent/EP1190454A1/fr
Priority to US10/019,169 priority patent/US6713356B1/en
Priority to TW089118601A priority patent/TW488033B/zh
Publication of FR2795555A1 publication Critical patent/FR2795555A1/fr
Application granted granted Critical
Publication of FR2795555B1 publication Critical patent/FR2795555B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
FR9908249A 1999-06-28 1999-06-28 Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique Expired - Fee Related FR2795555B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9908249A FR2795555B1 (fr) 1999-06-28 1999-06-28 Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
PCT/FR2000/001798 WO2001001496A1 (fr) 1999-06-28 2000-06-28 Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
EP00946029A EP1190454A1 (fr) 1999-06-28 2000-06-28 Procede de fabrication d'un dispositif semiconducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US10/019,169 US6713356B1 (en) 1999-06-28 2000-06-28 Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers
TW089118601A TW488033B (en) 1999-06-28 2000-09-11 Method of fabricating a semiconductor device comprising a stack of silicon layers alternating with dielectric material layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9908249A FR2795555B1 (fr) 1999-06-28 1999-06-28 Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique

Publications (2)

Publication Number Publication Date
FR2795555A1 FR2795555A1 (fr) 2000-12-29
FR2795555B1 true FR2795555B1 (fr) 2002-12-13

Family

ID=9547390

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9908249A Expired - Fee Related FR2795555B1 (fr) 1999-06-28 1999-06-28 Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique

Country Status (5)

Country Link
US (1) US6713356B1 (fr)
EP (1) EP1190454A1 (fr)
FR (1) FR2795555B1 (fr)
TW (1) TW488033B (fr)
WO (1) WO2001001496A1 (fr)

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US6713356B1 (en) 2004-03-30

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