FR2769406B1 - Substrat semiconducteur ayant une pellicule d'oxyde enterree et procede de fabrication d'un dispositif a semiconducteur - Google Patents

Substrat semiconducteur ayant une pellicule d'oxyde enterree et procede de fabrication d'un dispositif a semiconducteur

Info

Publication number
FR2769406B1
FR2769406B1 FR9806097A FR9806097A FR2769406B1 FR 2769406 B1 FR2769406 B1 FR 2769406B1 FR 9806097 A FR9806097 A FR 9806097A FR 9806097 A FR9806097 A FR 9806097A FR 2769406 B1 FR2769406 B1 FR 2769406B1
Authority
FR
France
Prior art keywords
manufacturing
oxide film
buried oxide
semiconductor device
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9806097A
Other languages
English (en)
Other versions
FR2769406A1 (fr
Inventor
Toshiaki Iwamatsu
Yasuo Yamaguchi
Takashi Ipposhi
Shigenobu Maeda
Yuuichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2769406A1 publication Critical patent/FR2769406A1/fr
Application granted granted Critical
Publication of FR2769406B1 publication Critical patent/FR2769406B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
FR9806097A 1997-10-06 1998-05-14 Substrat semiconducteur ayant une pellicule d'oxyde enterree et procede de fabrication d'un dispositif a semiconducteur Expired - Fee Related FR2769406B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27254197A JP3875375B2 (ja) 1997-10-06 1997-10-06 半導体装置の製造方法および半導体基板

Publications (2)

Publication Number Publication Date
FR2769406A1 FR2769406A1 (fr) 1999-04-09
FR2769406B1 true FR2769406B1 (fr) 2004-10-22

Family

ID=17515344

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9806097A Expired - Fee Related FR2769406B1 (fr) 1997-10-06 1998-05-14 Substrat semiconducteur ayant une pellicule d'oxyde enterree et procede de fabrication d'un dispositif a semiconducteur

Country Status (7)

Country Link
US (2) US6150696A (fr)
JP (1) JP3875375B2 (fr)
KR (1) KR100269667B1 (fr)
CN (1) CN1115716C (fr)
DE (1) DE19824207A1 (fr)
FR (1) FR2769406B1 (fr)
TW (1) TW393680B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3594779B2 (ja) 1997-06-24 2004-12-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH11204452A (ja) 1998-01-13 1999-07-30 Mitsubishi Electric Corp 半導体基板の処理方法および半導体基板
US6482749B1 (en) * 2000-08-10 2002-11-19 Seh America, Inc. Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid
JP2002313757A (ja) * 2001-04-17 2002-10-25 Hitachi Ltd 半導体集積回路装置の製造方法
US20030183915A1 (en) * 2002-04-02 2003-10-02 Motorola, Inc. Encapsulated organic semiconductor device and method
FR2852143B1 (fr) * 2003-03-04 2005-10-14 Soitec Silicon On Insulator Procede de traitement preventif de la couronne d'une tranche multicouche
DE10326273B4 (de) 2003-06-11 2008-06-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Reduzierung der Scheibenkontaminierung durch Entfernen von Metallisierungsunterlagenschichten am Scheibenrand
JP4004448B2 (ja) * 2003-09-24 2007-11-07 富士通株式会社 半導体装置およびその製造方法
JP2005129676A (ja) * 2003-10-23 2005-05-19 Sumitomo Mitsubishi Silicon Corp Ｓｏｉ基板用シリコン基板、ｓｏｉ基板、及びそのｓｏｉ基板の製造方法
US7838387B2 (en) * 2006-01-13 2010-11-23 Sumco Corporation Method for manufacturing SOI wafer
KR100870602B1 (ko) * 2007-08-24 2008-11-25 주식회사 동부하이텍 반도체 다이의 제조 방법
KR20130128227A (ko) * 2012-05-16 2013-11-26 삼성전자주식회사 전자소자 탑재용 기판의 제조방법
FR3003395B1 (fr) * 2013-03-15 2015-05-29 Commissariat Energie Atomique Procede et realisation d'un substrat muni d'une protection de bord
US10987048B2 (en) 2014-08-13 2021-04-27 Elwha Llc Systems, methods, and devices to incentivize inhaler use
US10245393B2 (en) 2014-08-13 2019-04-02 Elwha Llc Methods, systems, and devices related to a supplemental inhaler
US10765817B2 (en) 2014-08-13 2020-09-08 Elwha, Llc Methods, systems, and devices related to delivery of alcohol with an inhaler
JP6304445B2 (ja) * 2015-03-16 2018-04-04 富士電機株式会社 半導体装置の製造方法
JP6676365B2 (ja) * 2015-12-21 2020-04-08 キヤノン株式会社 撮像装置の製造方法
KR102625567B1 (ko) 2018-08-20 2024-01-16 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN111640798B (zh) * 2019-03-01 2023-04-07 世界先进积体电路股份有限公司 半导体装置及其制造方法
US10840328B1 (en) * 2019-05-16 2020-11-17 Vanguard International Semiconductor Corporation Semiconductor devices having charge-absorbing structure disposed over substrate and methods for forming the semiconductor devices

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700461A (en) * 1986-09-29 1987-10-20 Massachusetts Institute Of Technology Process for making junction field-effect transistors
US5116771A (en) * 1989-03-20 1992-05-26 Massachusetts Institute Of Technology Thick contacts for ultra-thin silicon on insulator films
JPH04163907A (ja) * 1990-10-29 1992-06-09 Fujitsu Ltd 半導体基板
EP0706203A1 (fr) * 1994-09-14 1996-04-10 Nippon Telegraph And Telephone Corporation Méthode de fabrication d'un substrat SOI
US5597410A (en) * 1994-09-15 1997-01-28 Yen; Yung C. Method to make a SOI wafer for IC manufacturing
JP3078720B2 (ja) 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
JP3249892B2 (ja) * 1994-11-28 2002-01-21 三菱電機株式会社 Ｓｏｉ構造を有する半導体装置の製造方法
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
US5494849A (en) * 1995-03-23 1996-02-27 Si Bond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator substrates
JPH08330553A (ja) * 1995-05-29 1996-12-13 Hitachi Ltd Ｓｏｉウエハおよびそれを用いた半導体集積回路装置の製造方法
JPH0917984A (ja) * 1995-06-29 1997-01-17 Sumitomo Sitix Corp 貼り合わせｓｏｉ基板の製造方法
JP3368726B2 (ja) * 1995-08-07 2003-01-20 ヤマハ株式会社 半導体記憶装置とその製造方法
JPH1010A (ja) 1996-06-13 1998-01-06 Shizuoka Prefecture 農事用台車等用のレール等挾持装置
US6287900B1 (en) * 1996-08-13 2001-09-11 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with catalyst addition and removal
US6046477A (en) * 1998-03-17 2000-04-04 Micron Technology, Inc. Dense SOI programmable logic array structure

Also Published As

Publication number Publication date
JP3875375B2 (ja) 2007-01-31
KR19990036492A (ko) 1999-05-25
CN1213843A (zh) 1999-04-14
KR100269667B1 (ko) 2000-10-16
JPH11111581A (ja) 1999-04-23
FR2769406A1 (fr) 1999-04-09
TW393680B (en) 2000-06-11
DE19824207A1 (de) 1999-04-15
CN1115716C (zh) 2003-07-23
US6335267B1 (en) 2002-01-01
US6150696A (en) 2000-11-21

Similar Documents

Publication Publication Date Title
FR2769406B1 (fr) Substrat semiconducteur ayant une pellicule d'oxyde enterree et procede de fabrication d'un dispositif a semiconducteur
FR2767603B1 (fr) Procede de fabrication d'un dispositif a semiconducteur sur un substrat semiconducteur
SG49343A1 (en) Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate
FR2788629B1 (fr) Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur
FR2717503B1 (fr) Procédé et appareil de fabrication d'un dispositif à semi-conducteur pour retirer un film d'oxyde naturel sur la surface d'un substrat semi-conducteur.
FR2679069B1 (fr) Dispositif a semiconducteur comportant une couche d'interconnexion et procede de fabrication de celui-ci.
FR2812764B1 (fr) Procede de fabrication d'un substrat de type substrat-sur- isolant ou substrat-sur-vide et dispositif obtenu
FR2809867B1 (fr) Substrat fragilise et procede de fabrication d'un tel substrat
FR2738079B1 (fr) Dispositif a semiconducteurs, a tranchee, et procede de fabrication
FR2795555B1 (fr) Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
FR2723940B1 (fr) Substrat portant un revetement et son procede de fabrication.
FR2709869B1 (fr) Couche antiréfléchissante et procédé pour fabriquer un dispositif semi-conducteur en utilisant une telle couche.
FR2788880B1 (fr) Procede de formation de couche d'oxyde de silicium et procede de fabrication d'un transistor en couche mince associe
SG60012A1 (en) Semiconductor substrate and fabrication method for the same
FR2762931B1 (fr) Dispositif a base d'ilots quantiques et procede de fabrication
FR2776833B1 (fr) Condensateur ferroelectrique et procede de fabrication d'un dispositif semi-conducteur le comprenant
IT1267970B1 (it) Procedimento per produrre un wafer di semiconduttore e corrispondente sistema.
FR2776831B1 (fr) Dispositif comprenant un transistor mos et procede de developpement d'un tel dispositif sur un substrat soi
FR2794897B1 (fr) Plaquette a semi-conducteur et dispositif a semi-conducteur fabrique a partir d'une telle plaquette
FR2700041B1 (fr) Procédé de fabrication d'un substrat pour carte à circuit intégré.
GB9924488D0 (en) Semiconductor device having a plurality of mosfets on substrate and method of manufacturing the same
FR2724489B1 (fr) Dispositif a semiconducteur et son procede de fabrication
FR2772982B1 (fr) Substrat d'anode pour un dispositif d'affichage et son procede de fabrication
FR2750799B1 (fr) Dispositif a semiconducteurs empechant le deverrouillage et procede de fabrication de ce dispositif
EP0738004A4 (fr) Procede et dispositif de fabrication d'un substrat a semi-conducteurs

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070131