FR2794897B1 - Plaquette a semi-conducteur et dispositif a semi-conducteur fabrique a partir d'une telle plaquette - Google Patents

Plaquette a semi-conducteur et dispositif a semi-conducteur fabrique a partir d'une telle plaquette

Info

Publication number
FR2794897B1
FR2794897B1 FR0006144A FR0006144A FR2794897B1 FR 2794897 B1 FR2794897 B1 FR 2794897B1 FR 0006144 A FR0006144 A FR 0006144A FR 0006144 A FR0006144 A FR 0006144A FR 2794897 B1 FR2794897 B1 FR 2794897B1
Authority
FR
France
Prior art keywords
wafer
semiconductor
device manufactured
semiconductor device
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0006144A
Other languages
English (en)
Other versions
FR2794897A1 (fr
Inventor
Takuji Matsumoto
Toshiaki Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2794897A1 publication Critical patent/FR2794897A1/fr
Application granted granted Critical
Publication of FR2794897B1 publication Critical patent/FR2794897B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
FR0006144A 1999-06-11 2000-05-15 Plaquette a semi-conducteur et dispositif a semi-conducteur fabrique a partir d'une telle plaquette Expired - Fee Related FR2794897B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11165951A JP2000353797A (ja) 1999-06-11 1999-06-11 半導体ウエハおよびその製造方法

Publications (2)

Publication Number Publication Date
FR2794897A1 FR2794897A1 (fr) 2000-12-15
FR2794897B1 true FR2794897B1 (fr) 2003-09-26

Family

ID=15822126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0006144A Expired - Fee Related FR2794897B1 (fr) 1999-06-11 2000-05-15 Plaquette a semi-conducteur et dispositif a semi-conducteur fabrique a partir d'une telle plaquette

Country Status (3)

Country Link
US (2) US6774435B1 (fr)
JP (1) JP2000353797A (fr)
FR (1) FR2794897B1 (fr)

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FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2860341B1 (fr) * 2003-09-26 2005-12-30 Soitec Silicon On Insulator Procede de fabrication de structure multicouche a pertes diminuees
JP4885426B2 (ja) * 2004-03-12 2012-02-29 ルネサスエレクトロニクス株式会社 半導体記憶装置、半導体装置及びその製造方法
JP4814498B2 (ja) 2004-06-18 2011-11-16 シャープ株式会社 半導体基板の製造方法
JP5124931B2 (ja) * 2005-10-14 2013-01-23 信越半導体株式会社 多層ｓｏｉウエーハの製造方法
JP4677331B2 (ja) 2005-11-30 2011-04-27 エルピーダメモリ株式会社 島状の分散構造を備えた半導体チップおよびその製造方法
KR100841376B1 (ko) 2007-06-12 2008-06-26 삼성에스디아이 주식회사 접합방법 및 그를 이용한 유기전계발광표시장치의 제조방법
KR100891384B1 (ko) 2007-06-14 2009-04-02 삼성모바일디스플레이주식회사 플렉서블 기판 접합 및 탈착장치
WO2009004889A1 (fr) * 2007-07-04 2009-01-08 Shin-Etsu Handotai Co., Ltd. Tranche de silicium en film mince et procédé de fabrication de celle-ci
KR100889625B1 (ko) 2007-07-19 2009-03-20 삼성모바일디스플레이주식회사 접합방법 및 그를 이용한 유기전계발광표시장치의 제조방법
US8128749B2 (en) * 2007-10-04 2012-03-06 International Business Machines Corporation Fabrication of SOI with gettering layer
FR2926672B1 (fr) * 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication de couches de materiau epitaxie
US9245760B2 (en) * 2010-09-30 2016-01-26 Infineon Technologies Ag Methods of forming epitaxial layers on a porous semiconductor layer
JP5673170B2 (ja) * 2011-02-09 2015-02-18 信越半導体株式会社 貼り合わせ基板、貼り合わせ基板の製造方法、半導体デバイス、及び半導体デバイスの製造方法
US9601624B2 (en) 2014-12-30 2017-03-21 Globalfoundries Inc SOI based FINFET with strained source-drain regions
US10833175B2 (en) * 2015-06-04 2020-11-10 International Business Machines Corporation Formation of dislocation-free SiGe finFET using porous silicon
DE102015211087B4 (de) 2015-06-17 2019-12-05 Soitec Verfahren zur Herstellung eines Hochwiderstands-Halbleiter-auf-Isolator-Substrates
US10181428B2 (en) * 2015-08-28 2019-01-15 Skyworks Solutions, Inc. Silicon on porous silicon
CN110085550A (zh) * 2018-01-26 2019-08-02 沈阳硅基科技有限公司 一种半导体产品用绝缘层结构及其制备方法
FR3117668B1 (fr) 2020-12-16 2022-12-23 Commissariat Energie Atomique Structure amelioree de substrat rf et procede de realisation
US12027582B2 (en) 2021-10-05 2024-07-02 Globalfoundries U.S. Inc. IC structure including porous semiconductor layer under trench isolation
US12119352B2 (en) 2022-01-06 2024-10-15 Globalfoundries U.S. Inc. IC structure including porous semiconductor layer in bulk substrate adjacent trench isolation
CN116516458B (zh) * 2023-06-09 2024-04-16 中电科先进材料技术创新有限公司 本征吸杂硅片的制备方法及本征吸杂硅片

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Also Published As

Publication number Publication date
JP2000353797A (ja) 2000-12-19
US20040253458A1 (en) 2004-12-16
FR2794897A1 (fr) 2000-12-15
US6774435B1 (en) 2004-08-10

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Legal Events

Date Code Title Description
RU Appeal formed before the court of appeals
JE Final juridical decision affecting the existence or validity of an industrial property right
RP Partial renunciation
ST Notification of lapse

Effective date: 20100129