FR2776128B1 - Dispositif a inductance forme sur un substrat semiconducteur - Google Patents

Dispositif a inductance forme sur un substrat semiconducteur

Info

Publication number
FR2776128B1
FR2776128B1 FR9814825A FR9814825A FR2776128B1 FR 2776128 B1 FR2776128 B1 FR 2776128B1 FR 9814825 A FR9814825 A FR 9814825A FR 9814825 A FR9814825 A FR 9814825A FR 2776128 B1 FR2776128 B1 FR 2776128B1
Authority
FR
France
Prior art keywords
semiconductor substrate
device formed
inductance device
inductance
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9814825A
Other languages
English (en)
Other versions
FR2776128A1 (fr
Inventor
Osamu Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2776128A1 publication Critical patent/FR2776128A1/fr
Application granted granted Critical
Publication of FR2776128B1 publication Critical patent/FR2776128B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
FR9814825A 1998-03-11 1998-11-25 Dispositif a inductance forme sur un substrat semiconducteur Expired - Fee Related FR2776128B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05962098A JP3942264B2 (ja) 1998-03-11 1998-03-11 半導体基板上に形成されるインダクタンス素子

Publications (2)

Publication Number Publication Date
FR2776128A1 FR2776128A1 (fr) 1999-09-17
FR2776128B1 true FR2776128B1 (fr) 2005-04-15

Family

ID=13118479

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9814825A Expired - Fee Related FR2776128B1 (fr) 1998-03-11 1998-11-25 Dispositif a inductance forme sur un substrat semiconducteur

Country Status (5)

Country Link
US (3) US6225677B1 (fr)
JP (1) JP3942264B2 (fr)
KR (1) KR100334041B1 (fr)
FR (1) FR2776128B1 (fr)
TW (1) TW401639B (fr)

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US6455915B1 (en) * 2000-05-30 2002-09-24 Programmable Silicon Solutions Integrated inductive circuits
EP1160842A3 (fr) * 2000-05-30 2003-09-17 Programmable Silicon Solutions Circuits integrés à haute fréquence
US6917095B1 (en) 2000-05-30 2005-07-12 Altera Corporation Integrated radio frequency circuits
US6441442B1 (en) 2000-05-30 2002-08-27 Programmable Silicon Solutions Integrated inductive circuits
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DE10136740A1 (de) * 2001-07-27 2002-10-24 Infineon Technologies Ag Integriertes, induktives Bauelement
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FR2846792A1 (fr) * 2002-10-30 2004-05-07 Commissariat Energie Atomique Composant microelectrique radiofrequence et procede de realisation
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CN100461410C (zh) * 2003-08-28 2009-02-11 株式会社日立制作所 半导体器件以及其制造方法
DE102004014752B4 (de) * 2004-03-25 2008-11-20 Infineon Technologies Ag Halbleiterbauelement mit kernlosem Wandler und Halbbrücke
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US7786836B2 (en) * 2005-07-19 2010-08-31 Lctank Llc Fabrication of inductors in transformer based tank circuitry
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US7279426B2 (en) * 2005-09-22 2007-10-09 International Business Machines Corporation Like integrated circuit devices with different depth
JP4647484B2 (ja) * 2005-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US7402890B2 (en) * 2006-06-02 2008-07-22 International Business Machines Corporation Method for symmetric capacitor formation
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US7948055B2 (en) * 2006-08-31 2011-05-24 United Microelectronics Corp. Inductor formed on semiconductor substrate
KR100883036B1 (ko) * 2007-07-25 2009-02-09 주식회사 동부하이텍 반도체 소자용 인덕터 및 그 제조 방법
US20100193904A1 (en) * 2009-01-30 2010-08-05 Watt Jeffrey T Integrated circuit inductor with doped substrate
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KR101121645B1 (ko) * 2010-03-22 2012-02-28 삼성전기주식회사 평면형 트랜스포머
TWI498928B (zh) * 2010-08-04 2015-09-01 Richwave Technology Corp 螺旋電感元件
CN102376700A (zh) * 2010-08-04 2012-03-14 立积电子股份有限公司 电子组件及其制法、螺旋电感组件及其制法
US8686539B1 (en) * 2010-10-15 2014-04-01 Xilinx, Inc. Inductor having a deep-well noise isolation shield
WO2012121724A1 (fr) * 2011-03-09 2012-09-13 Hewlett-Packard Development Company, L.P. Bobine de puissance plate pour applications de charge sans fil
CN102522385A (zh) * 2011-12-30 2012-06-27 上海集成电路研发中心有限公司 片上集成铜电感
US8878334B1 (en) * 2012-03-23 2014-11-04 Altera Corporation Integrated circuit resistors with reduced parasitic capacitance
JP6057534B2 (ja) * 2012-04-18 2017-01-11 住重試験検査株式会社 半導体装置の製造方法
CN103474414B (zh) * 2012-06-06 2016-03-16 中芯国际集成电路制造(上海)有限公司 电感及其形成方法
JP5719000B2 (ja) * 2013-09-17 2015-05-13 学校法人慶應義塾 集積回路装置
JP6375872B2 (ja) * 2014-10-29 2018-08-22 住友電気工業株式会社 超電導マグネットおよび超電導機器
TWI587329B (zh) * 2014-10-31 2017-06-11 台灣東電化股份有限公司 無線充電印刷電路板線圈結構
JP7056016B2 (ja) * 2017-06-13 2022-04-19 Tdk株式会社 コイル部品
JP7169871B2 (ja) * 2018-12-26 2022-11-11 住重アテックス株式会社 半導体装置の製造方法
JP7430376B2 (ja) * 2019-12-19 2024-02-13 三安ジャパンテクノロジー株式会社 スパイラルインダクタ及びパッシブ集積回路
KR20220102772A (ko) 2021-01-14 2022-07-21 주식회사 삼주유니콘 환봉의 길이 조절장치
CN113745404A (zh) * 2021-08-25 2021-12-03 中国科学院微电子研究所 螺旋电感的制备方法、螺旋电感及无源器件模块

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JP2904086B2 (ja) * 1995-12-27 1999-06-14 日本電気株式会社 半導体装置およびその製造方法
SE510443C2 (sv) * 1996-05-31 1999-05-25 Ericsson Telefon Ab L M Induktorer för integrerade kretsar
KR100314610B1 (ko) * 1996-08-09 2001-12-28 윤덕용 산화막다공성실리콘기판을이용한초고주파소자
KR100243658B1 (ko) * 1996-12-06 2000-02-01 정선종 기판 변환기술을 이용한 인덕터 소자 및 그 제조 방법
US5844299A (en) 1997-01-31 1998-12-01 National Semiconductor Corporation Integrated inductor

Also Published As

Publication number Publication date
US20010040270A1 (en) 2001-11-15
KR19990076525A (ko) 1999-10-15
JP3942264B2 (ja) 2007-07-11
TW401639B (en) 2000-08-11
US6879022B2 (en) 2005-04-12
US20020149088A1 (en) 2002-10-17
US6225677B1 (en) 2001-05-01
KR100334041B1 (ko) 2002-09-25
FR2776128A1 (fr) 1999-09-17
JPH11261008A (ja) 1999-09-24

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Effective date: 20110801