WO2001093317A1 - Circuits inducteurs integres - Google Patents

Circuits inducteurs integres Download PDF

Info

Publication number
WO2001093317A1
WO2001093317A1 PCT/US2000/040646 US0040646W WO0193317A1 WO 2001093317 A1 WO2001093317 A1 WO 2001093317A1 US 0040646 W US0040646 W US 0040646W WO 0193317 A1 WO0193317 A1 WO 0193317A1
Authority
WO
WIPO (PCT)
Prior art keywords
well
substrate
circuit
circuits
radio frequency
Prior art date
Application number
PCT/US2000/040646
Other languages
English (en)
Inventor
Ting-Wah Wong
Original Assignee
Programmable Silicon Solutions
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Programmable Silicon Solutions filed Critical Programmable Silicon Solutions
Priority to EP00967395A priority Critical patent/EP1203401A1/fr
Priority to AU2000277602A priority patent/AU2000277602A1/en
Priority to EP01201777A priority patent/EP1160842A3/fr
Publication of WO2001093317A1 publication Critical patent/WO2001093317A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

On peut former un circuit RF (12) sur un puits triple, de façon à créer deux jonctions polarisées inverses (66b et 66c). En réglant la polarisation à travers ces jonctions, la capacitance (67a et 67b) à travers les jonctions peut être réduite, ce qui réduit le couplage capacitif depuis les circuits RF jusqu'au substrat (42), améliorant ainsi la fréquence d'autorésonance des inducteurs (48, 50) et réduisant le couplage des signaux et des bruits parasites indésirés depuis le substrat sous-jacent jusqu'aux circuits actifs et aux composants passifs, tels que les condensateurs et inducteurs. Il en résulte que des dispositifs à radiofréquence (10), tels que radios, téléphones cellulaires et émetteurs-récepteurs, par exemple émetteurs-récepteurs Bluetooth, dispositifs logiques et dispositifs à mémoire flash et SRAM, peuvent être formés dans la même microplaquette à circuit intégré, en utilisant des processus de fabrication CMOS.
PCT/US2000/040646 2000-05-30 2000-08-16 Circuits inducteurs integres WO2001093317A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP00967395A EP1203401A1 (fr) 2000-05-30 2000-08-16 Circuits inducteurs integres
AU2000277602A AU2000277602A1 (en) 2000-05-30 2000-08-16 Integrated inductive circuits
EP01201777A EP1160842A3 (fr) 2000-05-30 2001-05-14 Circuits integrés à haute fréquence

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/580,713 2000-05-30
US59648600A 2000-06-19 2000-06-19
US09/596,486 2000-06-19

Publications (1)

Publication Number Publication Date
WO2001093317A1 true WO2001093317A1 (fr) 2001-12-06

Family

ID=24387472

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/040646 WO2001093317A1 (fr) 2000-05-30 2000-08-16 Circuits inducteurs integres

Country Status (1)

Country Link
WO (1) WO2001093317A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0751573A1 (fr) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Circuit intégré de puissance et procédé de fabrication associé
WO1998016010A1 (fr) * 1996-10-10 1998-04-16 Macronix International Co., Ltd. Pompe a charge avec trois puits
FR2776128A1 (fr) * 1998-03-11 1999-09-17 Fujitsu Ltd Dispositif a inductance forme sur un substrat semiconducteur
DE19851718A1 (de) * 1998-05-07 1999-11-18 Mitsubishi Electric Corp Verstärkungsschaltung
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0751573A1 (fr) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Circuit intégré de puissance et procédé de fabrication associé
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor
WO1998016010A1 (fr) * 1996-10-10 1998-04-16 Macronix International Co., Ltd. Pompe a charge avec trois puits
FR2776128A1 (fr) * 1998-03-11 1999-09-17 Fujitsu Ltd Dispositif a inductance forme sur un substrat semiconducteur
DE19851718A1 (de) * 1998-05-07 1999-11-18 Mitsubishi Electric Corp Verstärkungsschaltung

Similar Documents

Publication Publication Date Title
EP1291918B1 (fr) Circuits integrés à radio-fréquence
US6605857B2 (en) Reducing magnetic coupling using triple well
US8039925B2 (en) Integrated radio frequency circuits
US5939766A (en) High quality capacitor for sub-micrometer integrated circuits
US7808752B2 (en) Integrated passive filter incorporating inductors and ESD protectors
US9899982B2 (en) On-chip electromagnetic bandgap (EBG) structure for noise suppression
US20040041234A1 (en) 3-D spiral stacked inductor on semiconductor material
US7075167B2 (en) Spiral inductor formed in a semiconductor substrate
US6441442B1 (en) Integrated inductive circuits
JP2003338556A (ja) 並列積層インダクタ
US6806552B2 (en) Integrated inductive circuits
US11651884B2 (en) Peaking inductor embedded within a T-coil
WO2001093317A1 (fr) Circuits inducteurs integres
EP1203401A1 (fr) Circuits inducteurs integres
US20020097128A1 (en) Electronic component and method of manufacturing
EP1160842A2 (fr) Circuits integrés à haute fréquence
US20020005554A1 (en) Integrated radio frequency circuits
KR20060067082A (ko) 집적형 인덕터 및 그 제조방법
US20060125046A1 (en) Integrated inductor and method of fabricating the same
KR101559911B1 (ko) 금속 배선 형태의 인덕터 하부에 ｍｉｍ 캐패시터를 상기 배선의 폭보다 크지 않게 접목시키는 ｌｃ 회로 제조방법
CN1450642A (zh) 螺旋电感内含垂直电容的结构
KR20050062069A (ko) 고주파 반도체 장치의 제조 방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2000967395

Country of ref document: EP

AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2000967395

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWW Wipo information: withdrawn in national office

Ref document number: 2000967395

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP