FR2788880B1 - Procede de formation de couche d'oxyde de silicium et procede de fabrication d'un transistor en couche mince associe - Google Patents

Procede de formation de couche d'oxyde de silicium et procede de fabrication d'un transistor en couche mince associe

Info

Publication number
FR2788880B1
FR2788880B1 FR9913635A FR9913635A FR2788880B1 FR 2788880 B1 FR2788880 B1 FR 2788880B1 FR 9913635 A FR9913635 A FR 9913635A FR 9913635 A FR9913635 A FR 9913635A FR 2788880 B1 FR2788880 B1 FR 2788880B1
Authority
FR
France
Prior art keywords
manufacturing
forming
thin film
film transistor
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9913635A
Other languages
English (en)
Other versions
FR2788880A1 (fr
Inventor
Kwang Nam Kim
Gee Sung Chae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Philips LCD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Philips LCD Co Ltd filed Critical LG Philips LCD Co Ltd
Publication of FR2788880A1 publication Critical patent/FR2788880A1/fr
Application granted granted Critical
Publication of FR2788880B1 publication Critical patent/FR2788880B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
FR9913635A 1998-10-29 1999-10-29 Procede de formation de couche d'oxyde de silicium et procede de fabrication d'un transistor en couche mince associe Expired - Lifetime FR2788880B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30923798A JP3818561B2 (ja) 1998-10-29 1998-10-29 シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
FR2788880A1 FR2788880A1 (fr) 2000-07-28
FR2788880B1 true FR2788880B1 (fr) 2004-08-13

Family

ID=17990590

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9913635A Expired - Lifetime FR2788880B1 (fr) 1998-10-29 1999-10-29 Procede de formation de couche d'oxyde de silicium et procede de fabrication d'un transistor en couche mince associe

Country Status (6)

Country Link
US (5) US6337292B1 (fr)
JP (1) JP3818561B2 (fr)
KR (1) KR100335135B1 (fr)
DE (1) DE19952316B4 (fr)
FR (1) FR2788880B1 (fr)
GB (1) GB2343197B (fr)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4332263B2 (ja) * 1998-10-07 2009-09-16 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタの製造方法
JP3818561B2 (ja) * 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
JP2001057359A (ja) * 1999-08-17 2001-02-27 Tokyo Electron Ltd プラズマ処理装置
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6853141B2 (en) 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
TW511158B (en) * 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
KR100416373B1 (ko) * 2000-11-21 2004-01-31 삼성전자주식회사 알에프 매칭 유닛
TWI279169B (en) * 2002-01-24 2007-04-11 Alps Electric Co Ltd Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
JP4388287B2 (ja) * 2003-02-12 2009-12-24 東京エレクトロン株式会社 プラズマ処理装置及び高周波電力供給装置
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7371436B2 (en) * 2003-08-21 2008-05-13 Tokyo Electron Limited Method and apparatus for depositing materials with tunable optical properties and etching characteristics
JP2005167019A (ja) 2003-12-03 2005-06-23 Sharp Corp トランジスタおよびそのゲート絶縁膜の成膜に用いるｃｖｄ装置
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
US7855153B2 (en) * 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5052638B2 (ja) * 2010-03-17 2012-10-17 Ｓｐｐテクノロジーズ株式会社 成膜方法
JP5595134B2 (ja) * 2010-06-11 2014-09-24 富士フイルム株式会社 ドライエッチング装置及びドライエッチング方法
CN103578903B (zh) * 2012-07-18 2016-02-10 上海华虹宏力半导体制造有限公司 可调电极间距及平行度的刻蚀腔
CN102856392B (zh) * 2012-10-09 2015-12-02 深圳市华星光电技术有限公司 薄膜晶体管主动装置及其制作方法
JP5764246B1 (ja) * 2014-09-24 2015-08-19 株式会社日立国際電気 基板処理装置、ガス導入シャフト及びガス供給プレート
JP6929021B2 (ja) * 2016-04-25 2021-09-01 Ｓｐｐテクノロジーズ株式会社 シリコン酸化膜の製造方法
CN110911262B (zh) * 2019-11-12 2022-07-22 北京北方华创微电子装备有限公司 电感耦合等离子体系统
JP2021176988A (ja) * 2020-05-07 2021-11-11 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
US20220122811A1 (en) * 2020-10-16 2022-04-21 Applied Materials, Inc. Electric arc mitigating faceplate

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747711A (en) * 1980-08-08 1982-03-18 Fujitsu Ltd Chemical plasma growing method in vapor phase
JPS58181865A (ja) * 1982-04-20 1983-10-24 Citizen Watch Co Ltd プラズマｃｖｄ装置
JPS59115564A (ja) * 1982-12-23 1984-07-04 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
US4681653A (en) * 1984-06-01 1987-07-21 Texas Instruments Incorporated Planarized dielectric deposited using plasma enhanced chemical vapor deposition
JPS63262472A (ja) * 1987-04-20 1988-10-28 Sanyo Electric Co Ltd 膜形成方法
JPH0197681A (ja) * 1987-10-08 1989-04-17 Kanzaki Paper Mfg Co Ltd 感熱記録体
JPH01107547A (ja) * 1987-10-20 1989-04-25 Hitachi Cable Ltd 化合物半導体基板
JP2734021B2 (ja) * 1988-11-08 1998-03-30 日本電気株式会社 プラズマ気相成長方法
US5098865A (en) * 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
JPH03203317A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd プラズマ処理装置
FR2663806A1 (fr) 1990-06-25 1991-12-27 Commissariat Energie Atomique Reacteur a plasma du type triode, utilisable notamment pour la gravure, le depot ou le nettoyage de surfaces.
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
JPH0547750A (ja) * 1991-08-08 1993-02-26 Fujitsu Ltd 半導体装置
JP3154335B2 (ja) * 1991-08-13 2001-04-09 ソニー株式会社 画質制御装置
JPH0653151A (ja) * 1992-06-03 1994-02-25 Showa Shell Sekiyu Kk アモルファスシリコン薄膜およびそれを応用した太陽電池
JP3351843B2 (ja) * 1993-02-24 2002-12-03 忠弘 大見 成膜方法
JPH06328864A (ja) * 1993-03-23 1994-11-29 Fuji Photo Film Co Ltd 感熱記録材料
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3336747B2 (ja) * 1994-06-09 2002-10-21 ソニー株式会社 絶縁膜の形成方法、並びに半導体装置の作製方法及び半導体装置
JP3417072B2 (ja) * 1994-08-15 2003-06-16 ソニー株式会社 半導体装置の製法
JPH08227888A (ja) 1995-02-21 1996-09-03 Sony Corp 誘電体膜の形成方法
KR960039197A (ko) * 1995-04-12 1996-11-21 모리시다 요이치 실리콘 산화막의 형성방법 및 반도체 장치의 제조방법
EP0759481A1 (fr) * 1995-06-23 1997-02-26 Novellus Systems, Inc. Méthode pour déposer un film stable de TEOS fluoré
KR100300263B1 (ko) * 1995-08-04 2001-12-17 구사마 사부로 박막트랜지스터의제조방법,액티브매트릭스기판의제조방법및액정표시장치
US5736423A (en) * 1995-11-16 1998-04-07 Advanced Micro Devices, Inc. Method for depositing very thin PECVD SiO2 in 0.5 micron and 0.35 micron technologies
US5968324A (en) * 1995-12-05 1999-10-19 Applied Materials, Inc. Method and apparatus for depositing antireflective coating
US6391690B2 (en) * 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US5660895A (en) * 1996-04-24 1997-08-26 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Low-temperature plasma-enhanced chemical vapor deposition of silicon oxide films and fluorinated silicon oxide films using disilane as a silicon precursor
JPH09298193A (ja) 1996-05-08 1997-11-18 Fuji Film Micro Device Kk パッシベーション膜の製造方法
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
JPH10125669A (ja) * 1996-10-22 1998-05-15 Hitachi Electron Eng Co Ltd プラズマｃｖｄ装置及び酸化膜の成膜方法
US6562544B1 (en) * 1996-11-04 2003-05-13 Applied Materials, Inc. Method and apparatus for improving accuracy in photolithographic processing of substrates
JPH10172792A (ja) * 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US6077764A (en) * 1997-04-21 2000-06-20 Applied Materials, Inc. Process for depositing high deposition rate halogen-doped silicon oxide layer
JP3384714B2 (ja) * 1997-07-16 2003-03-10 富士通株式会社 半導体装置およびその製造方法
JP2916119B2 (ja) * 1997-08-06 1999-07-05 アプライド マテリアルズ インコーポレイテッド 薄膜形成方法
JPH1178255A (ja) * 1997-09-03 1999-03-23 Dainippon Printing Co Ltd 熱転写受像シート
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
US6294459B1 (en) * 1998-09-03 2001-09-25 Micron Technology, Inc. Anti-reflective coatings and methods for forming and using same
JP3818561B2 (ja) * 1998-10-29 2006-09-06 エルジー フィリップス エルシーディー カンパニー リミテッド シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法
US6221794B1 (en) * 1998-12-08 2001-04-24 Advanced Micro Devices, Inc. Method of reducing incidence of stress-induced voiding in semiconductor interconnect lines
US6100163A (en) * 1999-01-07 2000-08-08 Taiwan Semiconductor Manufacturing Company Gap filling of shallow trench isolation by ozone-tetraethoxysilane
US6693061B2 (en) * 2000-11-24 2004-02-17 Ricoh Company, Ltd. Light-permeable thermosensitive recording material

Also Published As

Publication number Publication date
GB2343197B (en) 2001-01-10
US20020019144A1 (en) 2002-02-14
DE19952316A1 (de) 2000-06-08
US6627545B2 (en) 2003-09-30
US6337292B1 (en) 2002-01-08
JP3818561B2 (ja) 2006-09-06
US6716752B2 (en) 2004-04-06
KR100335135B1 (ko) 2002-05-04
KR20000029171A (ko) 2000-05-25
US20050112806A1 (en) 2005-05-26
GB9925564D0 (en) 1999-12-29
FR2788880A1 (fr) 2000-07-28
US20050074984A1 (en) 2005-04-07
US7378304B2 (en) 2008-05-27
GB2343197A (en) 2000-05-03
JP2000138211A (ja) 2000-05-16
DE19952316B4 (de) 2004-05-06
US20030109147A1 (en) 2003-06-12

Similar Documents

Publication Publication Date Title
FR2788880B1 (fr) Procede de formation de couche d'oxyde de silicium et procede de fabrication d'un transistor en couche mince associe
FR2750796B1 (fr) Procede de fabrication d'un transistor en couche mince
FR2795555B1 (fr) Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
FR2761808B1 (fr) Transistor en couche mince et son procede de fabrication
FR2725074B1 (fr) Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
GB2338598B (en) Methods of crystalizing amorphous silicon layer and fabricating thin film transistors using the same
FR2747234B1 (fr) Procede de fabrication d'un transistor en couche mince, et transistor en couche mince
SG49343A1 (en) Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate
EP0749165A3 (fr) Transitor à couche mince sur un substrat semi-conducteur isolé et méthode de fabrication
FR2679069B1 (fr) Dispositif a semiconducteur comportant une couche d'interconnexion et procede de fabrication de celui-ci.
FR2812764B1 (fr) Procede de fabrication d'un substrat de type substrat-sur- isolant ou substrat-sur-vide et dispositif obtenu
FR2788629B1 (fr) Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur
FR2729328B1 (fr) Stratifie de barriere d'infiltration d'air et procede de fabrication
EP0506416A3 (en) Manufacturing method of soi substrate having monocrystal silicon layer on insulating film
KR0138071B1 (en) Thin layer forming method and its manufacturing method of semiconductor device
FR2573916B1 (fr) Procede de fabrication d'un film semi-conducteur mince et film ainsi obtenu
FR2698210B1 (fr) Procédé de fabrication de transistors à film mince.
FR2769406B1 (fr) Substrat semiconducteur ayant une pellicule d'oxyde enterree et procede de fabrication d'un dispositif a semiconducteur
FR2766613B1 (fr) Procede de cristallisation de couche de silicium amorphe et procede de fabrication de transistor en couche mince
CA2153848A1 (fr) Mince pellicule d'oxyde possedant la structure cristalline du quartz; methode d'obtention
FR2728103B1 (fr) Substrat de base en si recouvert d'une couche de cdte ou de cdznte riche en cd et procede pour sa production
FR2775120B1 (fr) Procede de nitruration de la couche d'oxyde de grille d'un dispositif semiconducteur et dispositif obtenu
FR2575332B1 (fr) Dispositif semi-conducteur ayant une couche metallisee de plusieurs epaisseurs et procede pour sa fabrication
FR2708142B1 (fr) Procédé de fabrication d'un transistor en technologie silicium sur isolant.
FR2746544B1 (fr) Substrat de type silicium sur isolant pour la fabrication de transistors et procede de preparation d'un tel substrat

Legal Events

Date Code Title Description
CD Change of name or company name
PLFP Fee payment

Year of fee payment: 18

PLFP Fee payment

Year of fee payment: 19