FR2573916B1 - Procede de fabrication d'un film semi-conducteur mince et film ainsi obtenu - Google Patents

Procede de fabrication d'un film semi-conducteur mince et film ainsi obtenu

Info

Publication number
FR2573916B1
FR2573916B1 FR858517451A FR8517451A FR2573916B1 FR 2573916 B1 FR2573916 B1 FR 2573916B1 FR 858517451 A FR858517451 A FR 858517451A FR 8517451 A FR8517451 A FR 8517451A FR 2573916 B1 FR2573916 B1 FR 2573916B1
Authority
FR
France
Prior art keywords
film
manufacturing
thin semiconductor
semiconductor film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858517451A
Other languages
English (en)
Other versions
FR2573916A1 (fr
Inventor
Takashi Noguchi
Hisao Hayashi
Takefumi Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59249406A external-priority patent/JPH0824103B2/ja
Priority claimed from JP59252882A external-priority patent/JPH0817157B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2573916A1 publication Critical patent/FR2573916A1/fr
Application granted granted Critical
Publication of FR2573916B1 publication Critical patent/FR2573916B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/061—Gettering-armorphous layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
FR858517451A 1984-11-26 1985-11-26 Procede de fabrication d'un film semi-conducteur mince et film ainsi obtenu Expired - Lifetime FR2573916B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59249406A JPH0824103B2 (ja) 1984-11-26 1984-11-26 薄膜トランジスタの製造方法
JP59252882A JPH0817157B2 (ja) 1984-11-30 1984-11-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
FR2573916A1 FR2573916A1 (fr) 1986-05-30
FR2573916B1 true FR2573916B1 (fr) 1991-06-28

Family

ID=26539269

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858517451A Expired - Lifetime FR2573916B1 (fr) 1984-11-26 1985-11-26 Procede de fabrication d'un film semi-conducteur mince et film ainsi obtenu

Country Status (7)

Country Link
US (1) US4693759A (fr)
AT (1) AT399421B (fr)
CA (1) CA1239706A (fr)
DE (1) DE3541587C2 (fr)
FR (1) FR2573916B1 (fr)
GB (1) GB2169442B (fr)
NL (1) NL194832C (fr)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4946735A (en) * 1986-02-10 1990-08-07 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
US5081062A (en) * 1987-08-27 1992-01-14 Prahalad Vasudev Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies
US4904611A (en) * 1987-09-18 1990-02-27 Xerox Corporation Formation of large grain polycrystalline films
JPH01244664A (ja) * 1988-03-25 1989-09-29 Sanyo Electric Co Ltd 薄膜トランジスタ
DE69030822T2 (de) 1989-02-14 1997-11-27 Seiko Epson Corp Halbleitervorrichtung und Verfahren zu ihrer Herstellung
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
EP0459763B1 (fr) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Transistors en couche mince
JPH0456325A (ja) * 1990-06-26 1992-02-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5169806A (en) * 1990-09-26 1992-12-08 Xerox Corporation Method of making amorphous deposited polycrystalline silicon thermal ink jet transducers
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US5298455A (en) * 1991-01-30 1994-03-29 Tdk Corporation Method for producing a non-single crystal semiconductor device
JP3056813B2 (ja) 1991-03-25 2000-06-26 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその製造方法
US6556257B2 (en) * 1991-09-05 2003-04-29 Sony Corporation Liquid crystal display device
US5576222A (en) * 1992-01-27 1996-11-19 Tdk Corp. Method of making a semiconductor image sensor device
JP2935446B2 (ja) * 1992-02-28 1999-08-16 カシオ計算機株式会社 半導体装置
US5904550A (en) * 1992-02-28 1999-05-18 Casio Computer Co., Ltd. Method of producing a semiconductor device
JPH06140631A (ja) * 1992-10-28 1994-05-20 Ryoden Semiconductor Syst Eng Kk 電界効果型薄膜トランジスタおよびその製造方法
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US6323071B1 (en) * 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US5563093A (en) * 1993-01-28 1996-10-08 Kawasaki Steel Corporation Method of manufacturing fet semiconductor devices with polysilicon gate having large grain sizes
KR100255689B1 (ko) * 1993-05-27 2000-05-01 윤종용 반도체 레이져 소자 및 그 제조방법
JP3157985B2 (ja) * 1993-06-10 2001-04-23 三菱電機株式会社 薄膜トランジスタおよびその製造方法
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
TW295703B (fr) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3599290B2 (ja) * 1994-09-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
JPH08148430A (ja) * 1994-11-24 1996-06-07 Sony Corp 多結晶半導体薄膜の作成方法
KR100208439B1 (ko) * 1995-05-04 1999-07-15 김영환 반도체 소자의 폴리실리콘층 형성방법
JP4003888B2 (ja) * 1995-06-06 2007-11-07 旭化成エレクトロニクス株式会社 半導体装置およびその製造方法
US5893948A (en) * 1996-04-05 1999-04-13 Xerox Corporation Method for forming single silicon crystals using nucleation sites
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US6180539B1 (en) * 1998-12-08 2001-01-30 United Microelectronics Corp. Method of forming an inter-poly oxide layer
TW457553B (en) 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
KR100324871B1 (ko) * 1999-06-25 2002-02-28 구본준, 론 위라하디락사 박막트랜지스터 제조방법
US6726549B2 (en) * 2000-09-08 2004-04-27 Cold Jet, Inc. Particle blast apparatus
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
TW200411726A (en) * 2002-12-31 2004-07-01 Au Optronics Corp Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method
JP4655495B2 (ja) * 2004-03-31 2011-03-23 東京エレクトロン株式会社 成膜方法
US8334194B2 (en) * 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
FR2968316B1 (fr) * 2010-12-01 2013-06-28 Commissariat Energie Atomique Procede de preparation d'une couche de silicium cristallise a gros grains
KR20120127009A (ko) * 2011-05-13 2012-11-21 에스케이하이닉스 주식회사 반도체장치 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
JPS5618430A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
US4385937A (en) * 1980-05-20 1983-05-31 Tokyo Shibaura Denki Kabushiki Kaisha Regrowing selectively formed ion amorphosized regions by thermal gradient
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS59205712A (ja) * 1983-04-30 1984-11-21 Fujitsu Ltd 半導体装置の製造方法
JPS60134470A (ja) * 1983-12-22 1985-07-17 Seiko Epson Corp 半導体装置
US4588447A (en) * 1984-06-25 1986-05-13 Rockwell International Corporation Method of eliminating p-type electrical activity and increasing channel mobility of Si-implanted and recrystallized SOS films
US4584028A (en) * 1984-09-24 1986-04-22 Rca Corporation Neutralization of acceptor levels in silicon by atomic hydrogen

Also Published As

Publication number Publication date
AT399421B (de) 1995-05-26
GB2169442B (en) 1988-01-06
GB2169442A (en) 1986-07-09
NL194832B (nl) 2002-12-02
US4693759A (en) 1987-09-15
DE3541587C2 (de) 1998-04-23
GB8529007D0 (en) 1986-01-02
DE3541587A1 (de) 1986-05-28
NL194832C (nl) 2003-04-03
ATA343185A (de) 1994-09-15
FR2573916A1 (fr) 1986-05-30
CA1239706A (fr) 1988-07-26
NL8503269A (nl) 1986-06-16

Similar Documents

Publication Publication Date Title
FR2573916B1 (fr) Procede de fabrication d&#39;un film semi-conducteur mince et film ainsi obtenu
EP0249211A3 (en) Method of manufacturing a thin film transistor
FR2554625B1 (fr) Element d&#39;enregistrement magnetique et procede de fabrication
FR2566631B1 (fr) Couche-culotte a ceinture elastique et procede de fabrication d&#39;une telle couche-culotte
FR2588044B1 (fr) Procede de fabrication d&#39;un panneau mince et produit obtenu
FR2490553B1 (fr) Procede de fabrication d&#39;un stratifie revetu de cuivre et stratifie obtenu
FR2571663B1 (fr) Document d&#39;identite difficilement falsifiable et procede de fabrication d&#39;un tel document
FR2543737B1 (fr) Procede de fabrication d&#39;une pellicule fine multicomposant
FR2525388B1 (fr) Procede de fabrication d&#39;un circuit integre planaire
PT70675A (fr) Procede de fabrication d&#39;un materiau d&#39;absorption phoniqueet materiau ainsi obtenu
FR2599448B1 (fr) Procede de fabrication d&#39;un segment de frein a disque et segment de frein ainsi obtenu
FR2634562B1 (fr) Procede de fabrication d&#39;un scintillateur et scintillateur ainsi obtenu
GB2172745B (en) Method of manufacturing thin film transistor
FR2566186B1 (fr) Procede de fabrication d&#39;au moins un transistor a effet de champ en couche mince et transistor obtenu par ce procede
BE896015A (fr) Procede de fabrication d&#39;un anneau d&#39;etancheite et anneau d&#39;etancheite ainsi obtenu
FR2524354B1 (fr) Procede de fabrication d&#39;element de transmission de mouvement a denture et element ainsi obtenu
FR2555630B1 (fr) Procede de fabrication de planchers isolants a base d&#39;elements ainsi que les elements et les planchers fabriques par ledit procede
FR2573248B1 (fr) Procede de fabrication d&#39;un transistor en film mince et transistor ainsi fabrique
FR2546537B1 (fr) Membrane d&#39;etancheite et son procede de fabrication
FR2640189B1 (fr) Procede de fabrication d&#39;un reflecteur thermoplastique et reflecteur ainsi obtenu
FR2591614B1 (fr) Procede de fabrication d&#39;un film de polyparaphenylene et applications du film de polyparaphenylene obtenu.
FR2515858B1 (fr) Procede pour diminuer la capacite intrinseque d&#39;un materiau a base de zno et materiau obtenu
FR2652868B1 (fr) Element d&#39;etancheite et procede de fabrication.
KR860004464A (ko) 반도체박막의 형성방법
FR2584018B1 (fr) Procede de fabrication d&#39;un tube composite et produit obtenu