FR2968316B1 - Procede de preparation d'une couche de silicium cristallise a gros grains - Google Patents

Procede de preparation d'une couche de silicium cristallise a gros grains

Info

Publication number
FR2968316B1
FR2968316B1 FR1059979A FR1059979A FR2968316B1 FR 2968316 B1 FR2968316 B1 FR 2968316B1 FR 1059979 A FR1059979 A FR 1059979A FR 1059979 A FR1059979 A FR 1059979A FR 2968316 B1 FR2968316 B1 FR 2968316B1
Authority
FR
France
Prior art keywords
preparation
silicon layer
crystallized silicon
big grains
grains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1059979A
Other languages
English (en)
Other versions
FR2968316A1 (fr
Inventor
Jean-Paul Garandet
Sebastien Dubois
Benoit Marie
Etienne Pihan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1059979A priority Critical patent/FR2968316B1/fr
Priority to PCT/IB2011/055389 priority patent/WO2012073205A1/fr
Publication of FR2968316A1 publication Critical patent/FR2968316A1/fr
Application granted granted Critical
Publication of FR2968316B1 publication Critical patent/FR2968316B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Photovoltaic Devices (AREA)
FR1059979A 2010-12-01 2010-12-01 Procede de preparation d'une couche de silicium cristallise a gros grains Expired - Fee Related FR2968316B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1059979A FR2968316B1 (fr) 2010-12-01 2010-12-01 Procede de preparation d'une couche de silicium cristallise a gros grains
PCT/IB2011/055389 WO2012073205A1 (fr) 2010-12-01 2011-11-30 Procede de preparation d'une couche de silicium cristallise a gros grains

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1059979A FR2968316B1 (fr) 2010-12-01 2010-12-01 Procede de preparation d'une couche de silicium cristallise a gros grains

Publications (2)

Publication Number Publication Date
FR2968316A1 FR2968316A1 (fr) 2012-06-08
FR2968316B1 true FR2968316B1 (fr) 2013-06-28

Family

ID=44146989

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1059979A Expired - Fee Related FR2968316B1 (fr) 2010-12-01 2010-12-01 Procede de preparation d'une couche de silicium cristallise a gros grains

Country Status (2)

Country Link
FR (1) FR2968316B1 (fr)
WO (1) WO2012073205A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2995913B1 (fr) * 2012-09-24 2014-10-10 Commissariat Energie Atomique Procede de formation d'une couche de silicium epitaxiee.
FR3000109B1 (fr) * 2012-12-21 2015-01-16 Commissariat Energie Atomique Procede de fabrication d’une couche epaisse cristalline

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1115628B (it) * 1976-05-11 1986-02-03 Ibm Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio
DE2645374A1 (de) * 1976-10-07 1978-04-13 Siemens Ag Verfahren zum herstellen von fuer halbleiterbauelemente verwendbarem polykristallinem silicium
CA1239706A (fr) * 1984-11-26 1988-07-26 Hisao Hayashi Faconnage d'une pellicule semiconductrice en couche mince
FR2620571B1 (fr) * 1987-09-11 1990-01-12 France Etat Procede de fabrication d'une structure de silicium sur isolant
US8008107B2 (en) * 2006-12-30 2011-08-30 Calisolar, Inc. Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation
FR2933684B1 (fr) * 2008-07-09 2011-05-06 Commissariat Energie Atomique Procede de purification d'un substrat en silicium cristallin et procede d'elaboration d'une cellule photovoltaique
US7914619B2 (en) * 2008-11-03 2011-03-29 International Business Machines Corporation Thick epitaxial silicon by grain reorientation annealing and applications thereof

Also Published As

Publication number Publication date
WO2012073205A1 (fr) 2012-06-07
FR2968316A1 (fr) 2012-06-08

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140829