FR2958200B1 - Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium - Google Patents
Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de siliciumInfo
- Publication number
- FR2958200B1 FR2958200B1 FR1152169A FR1152169A FR2958200B1 FR 2958200 B1 FR2958200 B1 FR 2958200B1 FR 1152169 A FR1152169 A FR 1152169A FR 1152169 A FR1152169 A FR 1152169A FR 2958200 B1 FR2958200 B1 FR 2958200B1
- Authority
- FR
- France
- Prior art keywords
- elimination
- substrate
- increase
- silicon oxide
- chemical mechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 230000008030 elimination Effects 0.000 title 1
- 238000003379 elimination reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/750,799 US8431490B2 (en) | 2010-03-31 | 2010-03-31 | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2958200A1 FR2958200A1 (fr) | 2011-10-07 |
FR2958200B1 true FR2958200B1 (fr) | 2015-04-17 |
Family
ID=44653739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1152169A Active FR2958200B1 (fr) | 2010-03-31 | 2011-03-16 | Procede de polissage chimico-mecanique d'un substrat avec une composition de polissage adaptee pour accroitre l'elimination de l'oxyde de silicium |
Country Status (7)
Country | Link |
---|---|
US (1) | US8431490B2 (fr) |
JP (1) | JP5861906B2 (fr) |
KR (1) | KR101672809B1 (fr) |
CN (1) | CN102206465B (fr) |
DE (1) | DE102011013982B4 (fr) |
FR (1) | FR2958200B1 (fr) |
TW (1) | TWI500749B (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
US9275899B2 (en) | 2014-06-27 | 2016-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing tungsten |
JP6533439B2 (ja) * | 2015-09-15 | 2019-06-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
CN107953225A (zh) * | 2016-10-14 | 2018-04-24 | 上海新昇半导体科技有限公司 | 半导体晶圆的抛光方法 |
US10683439B2 (en) * | 2018-03-15 | 2020-06-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
JP7222750B2 (ja) * | 2019-02-14 | 2023-02-15 | ニッタ・デュポン株式会社 | 研磨用組成物 |
US11292938B2 (en) * | 2019-09-11 | 2022-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
US20220348788A1 (en) * | 2021-04-27 | 2022-11-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU7147798A (en) | 1997-04-23 | 1998-11-13 | Advanced Chemical Systems International, Inc. | Planarization compositions for cmp of interlayer dielectrics |
JP2000136375A (ja) * | 1998-10-30 | 2000-05-16 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ− |
JP4644323B2 (ja) * | 1999-04-28 | 2011-03-02 | Agcセイミケミカル株式会社 | 有機アルカリを含有する半導体用研磨剤 |
JP2001162515A (ja) * | 1999-07-08 | 2001-06-19 | Ricoh Co Ltd | 研磨布およびその製造方法並びにマイクロカプセルおよびその製造方法 |
US6303506B1 (en) * | 1999-09-30 | 2001-10-16 | Infineon Technologies Ag | Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process |
WO2002083757A1 (fr) * | 2001-04-09 | 2002-10-24 | Toyo Boseki Kabushiki Kaisha | Composition de polyurethanne et tampon a polir |
JP2004266155A (ja) * | 2003-03-03 | 2004-09-24 | Jsr Corp | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
TW200424299A (en) * | 2002-12-26 | 2004-11-16 | Kao Corp | Polishing composition |
JP2004303983A (ja) * | 2003-03-31 | 2004-10-28 | Fuji Photo Film Co Ltd | 研磨パッド |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
US20060124026A1 (en) * | 2004-12-10 | 2006-06-15 | 3M Innovative Properties Company | Polishing solutions |
US7446046B2 (en) | 2005-01-06 | 2008-11-04 | Intel Corporation | Selective polish for fabricating electronic devices |
US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
US7585340B2 (en) * | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
CN101437918B (zh) * | 2006-05-02 | 2012-11-21 | 卡伯特微电子公司 | 用于半导体材料的化学机械抛光的组合物及方法 |
KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
US7820068B2 (en) * | 2007-02-21 | 2010-10-26 | Houghton Technical Corp. | Chemical assisted lapping and polishing of metals |
JP2009278061A (ja) * | 2008-04-16 | 2009-11-26 | Hitachi Chem Co Ltd | Cmp用研磨液及び研磨方法 |
US20110045203A1 (en) * | 2009-08-21 | 2011-02-24 | E. I. Du Pont De Nemours And Company | Process for inhibiting oxide formation on copper surfaces |
-
2010
- 2010-03-31 US US12/750,799 patent/US8431490B2/en active Active
-
2011
- 2011-03-10 JP JP2011052896A patent/JP5861906B2/ja active Active
- 2011-03-14 TW TW100108480A patent/TWI500749B/zh active
- 2011-03-15 KR KR1020110022818A patent/KR101672809B1/ko active IP Right Grant
- 2011-03-15 DE DE102011013982.6A patent/DE102011013982B4/de active Active
- 2011-03-16 CN CN201110072112.4A patent/CN102206465B/zh active Active
- 2011-03-16 FR FR1152169A patent/FR2958200B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
US8431490B2 (en) | 2013-04-30 |
CN102206465A (zh) | 2011-10-05 |
FR2958200A1 (fr) | 2011-10-07 |
DE102011013982A1 (de) | 2014-02-13 |
KR101672809B1 (ko) | 2016-11-04 |
DE102011013982B4 (de) | 2023-08-10 |
JP2011216873A (ja) | 2011-10-27 |
KR20110109859A (ko) | 2011-10-06 |
JP5861906B2 (ja) | 2016-02-16 |
CN102206465B (zh) | 2014-04-02 |
TWI500749B (zh) | 2015-09-21 |
US20110244685A1 (en) | 2011-10-06 |
TW201139635A (en) | 2011-11-16 |
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