CN102206465B - 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法 - Google Patents
使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法 Download PDFInfo
- Publication number
- CN102206465B CN102206465B CN201110072112.4A CN201110072112A CN102206465B CN 102206465 B CN102206465 B CN 102206465B CN 201110072112 A CN201110072112 A CN 201110072112A CN 102206465 B CN102206465 B CN 102206465B
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- Prior art keywords
- mechanical polishing
- chemical
- substrate
- formula
- polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 148
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 239000000203 mixture Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 239000000126 substance Substances 0.000 title claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 46
- 239000000377 silicon dioxide Substances 0.000 claims description 40
- 230000007547 defect Effects 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000003082 abrasive agent Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 229920002635 polyurethane Polymers 0.000 claims description 6
- 239000004814 polyurethane Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- 150000007522 mineralic acids Chemical group 0.000 claims description 2
- 150000007529 inorganic bases Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000012776 electronic material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 150000001450 anions Chemical class 0.000 description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- YACKEPLHDIMKIO-UHFFFAOYSA-N methylphosphonic acid Chemical compound CP(O)(O)=O YACKEPLHDIMKIO-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- -1 lattice damage Substances 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 0 **(Cc1ccccc1)(O)O Chemical compound **(Cc1ccccc1)(O)O 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- GXGJIOMUZAGVEH-UHFFFAOYSA-N Chamazulene Chemical group CCC1=CC=C(C)C2=CC=C(C)C2=C1 GXGJIOMUZAGVEH-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/750,799 | 2010-03-31 | ||
| US12/750,799 US8431490B2 (en) | 2010-03-31 | 2010-03-31 | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102206465A CN102206465A (zh) | 2011-10-05 |
| CN102206465B true CN102206465B (zh) | 2014-04-02 |
Family
ID=44653739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110072112.4A Active CN102206465B (zh) | 2010-03-31 | 2011-03-16 | 使用适合提高氧化硅的去除的抛光组合物对基片进行化学机械抛光的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8431490B2 (fr) |
| JP (1) | JP5861906B2 (fr) |
| KR (1) | KR101672809B1 (fr) |
| CN (1) | CN102206465B (fr) |
| DE (1) | DE102011013982B4 (fr) |
| FR (1) | FR2958200B1 (fr) |
| TW (1) | TWI500749B (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9012327B2 (en) | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| US9275899B2 (en) | 2014-06-27 | 2016-03-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing tungsten |
| JP6533439B2 (ja) * | 2015-09-15 | 2019-06-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| CN107953225A (zh) * | 2016-10-14 | 2018-04-24 | 上海新昇半导体科技有限公司 | 半导体晶圆的抛光方法 |
| US10683439B2 (en) * | 2018-03-15 | 2020-06-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect inhibition |
| JP7222750B2 (ja) * | 2019-02-14 | 2023-02-15 | ニッタ・デュポン株式会社 | 研磨用組成物 |
| US11292938B2 (en) | 2019-09-11 | 2022-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films |
| US20220348788A1 (en) * | 2021-04-27 | 2022-11-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing composition and method of polishing a substrate having enhanced defect reduction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1517424A (zh) * | 2002-12-26 | 2004-08-04 | ������������ʽ���� | 研磨液组合物 |
| CN1670115A (zh) * | 2004-03-19 | 2005-09-21 | 福吉米株式会社 | 抛光用组合物及抛光方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU7147798A (en) | 1997-04-23 | 1998-11-13 | Advanced Chemical Systems International, Inc. | Planarization compositions for cmp of interlayer dielectrics |
| JP2000136375A (ja) * | 1998-10-30 | 2000-05-16 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ− |
| JP4644323B2 (ja) * | 1999-04-28 | 2011-03-02 | Ａｇｃセイミケミカル株式会社 | 有機アルカリを含有する半導体用研磨剤 |
| JP2001162515A (ja) * | 1999-07-08 | 2001-06-19 | Ricoh Co Ltd | 研磨布およびその製造方法並びにマイクロカプセルおよびその製造方法 |
| US6303506B1 (en) * | 1999-09-30 | 2001-10-16 | Infineon Technologies Ag | Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process |
| KR100790427B1 (ko) * | 2001-04-09 | 2008-01-02 | 도요 고무 고교 가부시키가이샤 | 폴리우레탄 조성물 및 연마 패드 |
| JP2004266155A (ja) * | 2003-03-03 | 2004-09-24 | Jsr Corp | 化学機械研磨用水系分散体およびこれを用いた化学機械研磨方法ならびに半導体装置の製造方法 |
| JP2004303983A (ja) * | 2003-03-31 | 2004-10-28 | Fuji Photo Film Co Ltd | 研磨パッド |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| US20060124026A1 (en) * | 2004-12-10 | 2006-06-15 | 3M Innovative Properties Company | Polishing solutions |
| US7446046B2 (en) | 2005-01-06 | 2008-11-04 | Intel Corporation | Selective polish for fabricating electronic devices |
| US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
| US7585340B2 (en) * | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
| KR101395542B1 (ko) * | 2006-05-02 | 2014-05-14 | 캐보트 마이크로일렉트로닉스 코포레이션 | 반도체 물질의 ｃｍｐ를 위한 조성물 및 방법 |
| KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
| US7820068B2 (en) * | 2007-02-21 | 2010-10-26 | Houghton Technical Corp. | Chemical assisted lapping and polishing of metals |
| JP2009278061A (ja) * | 2008-04-16 | 2009-11-26 | Hitachi Chem Co Ltd | Ｃｍｐ用研磨液及び研磨方法 |
| US20110045203A1 (en) * | 2009-08-21 | 2011-02-24 | E. I. Du Pont De Nemours And Company | Process for inhibiting oxide formation on copper surfaces |
-
2010
- 2010-03-31 US US12/750,799 patent/US8431490B2/en active Active
-
2011
- 2011-03-10 JP JP2011052896A patent/JP5861906B2/ja active Active
- 2011-03-14 TW TW100108480A patent/TWI500749B/zh active
- 2011-03-15 DE DE102011013982.6A patent/DE102011013982B4/de active Active
- 2011-03-15 KR KR1020110022818A patent/KR101672809B1/ko active IP Right Grant
- 2011-03-16 FR FR1152169A patent/FR2958200B1/fr active Active
- 2011-03-16 CN CN201110072112.4A patent/CN102206465B/zh active Active
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| CN1517424A (zh) * | 2002-12-26 | 2004-08-04 | ������������ʽ���� | 研磨液组合物 |
| CN1670115A (zh) * | 2004-03-19 | 2005-09-21 | 福吉米株式会社 | 抛光用组合物及抛光方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011013982A1 (de) | 2014-02-13 |
| JP2011216873A (ja) | 2011-10-27 |
| KR101672809B1 (ko) | 2016-11-04 |
| DE102011013982B4 (de) | 2023-08-10 |
| CN102206465A (zh) | 2011-10-05 |
| TWI500749B (zh) | 2015-09-21 |
| TW201139635A (en) | 2011-11-16 |
| JP5861906B2 (ja) | 2016-02-16 |
| FR2958200B1 (fr) | 2015-04-17 |
| US20110244685A1 (en) | 2011-10-06 |
| FR2958200A1 (fr) | 2011-10-07 |
| US8431490B2 (en) | 2013-04-30 |
| KR20110109859A (ko) | 2011-10-06 |
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