FR2980916B1 - Procede de fabrication d'une structure de type silicium sur isolant - Google Patents

Procede de fabrication d'une structure de type silicium sur isolant

Info

Publication number
FR2980916B1
FR2980916B1 FR1158898A FR1158898A FR2980916B1 FR 2980916 B1 FR2980916 B1 FR 2980916B1 FR 1158898 A FR1158898 A FR 1158898A FR 1158898 A FR1158898 A FR 1158898A FR 2980916 B1 FR2980916 B1 FR 2980916B1
Authority
FR
France
Prior art keywords
insulation
producing
type structure
silicon type
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1158898A
Other languages
English (en)
Other versions
FR2980916A1 (fr
Inventor
Carole David
Sebastien Kerdiles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1158898A priority Critical patent/FR2980916B1/fr
Priority to SG2012061990A priority patent/SG188721A1/en
Priority to TW101131054A priority patent/TWI567825B/zh
Priority to CN201210322180.6A priority patent/CN103035562B/zh
Priority to JP2012205652A priority patent/JP6139081B2/ja
Priority to US13/629,093 priority patent/US9230848B2/en
Priority to KR1020120109037A priority patent/KR101970221B1/ko
Priority to EP12187002.6A priority patent/EP2579303B1/fr
Publication of FR2980916A1 publication Critical patent/FR2980916A1/fr
Application granted granted Critical
Publication of FR2980916B1 publication Critical patent/FR2980916B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Formation Of Insulating Films (AREA)
FR1158898A 2011-10-03 2011-10-03 Procede de fabrication d'une structure de type silicium sur isolant Active FR2980916B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1158898A FR2980916B1 (fr) 2011-10-03 2011-10-03 Procede de fabrication d'une structure de type silicium sur isolant
SG2012061990A SG188721A1 (en) 2011-10-03 2012-08-22 Process for fabricating a silicon-on-insulator structure
TW101131054A TWI567825B (zh) 2011-10-03 2012-08-27 製造絕緣體上矽結構之方法
CN201210322180.6A CN103035562B (zh) 2011-10-03 2012-09-03 制造绝缘体上硅结构的工艺
JP2012205652A JP6139081B2 (ja) 2011-10-03 2012-09-19 シリコンオンインシュレーター構造体の製造方法
US13/629,093 US9230848B2 (en) 2011-10-03 2012-09-27 Process for fabricating a silicon-on-insulator structure
KR1020120109037A KR101970221B1 (ko) 2011-10-03 2012-09-28 실리콘-온-절연체 구조 제조 방법
EP12187002.6A EP2579303B1 (fr) 2011-10-03 2012-10-02 Procédé de fabrication d'une structure de silicium sur isolant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158898A FR2980916B1 (fr) 2011-10-03 2011-10-03 Procede de fabrication d'une structure de type silicium sur isolant

Publications (2)

Publication Number Publication Date
FR2980916A1 FR2980916A1 (fr) 2013-04-05
FR2980916B1 true FR2980916B1 (fr) 2014-03-28

Family

ID=46888970

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158898A Active FR2980916B1 (fr) 2011-10-03 2011-10-03 Procede de fabrication d'une structure de type silicium sur isolant

Country Status (8)

Country Link
US (1) US9230848B2 (fr)
EP (1) EP2579303B1 (fr)
JP (1) JP6139081B2 (fr)
KR (1) KR101970221B1 (fr)
CN (1) CN103035562B (fr)
FR (1) FR2980916B1 (fr)
SG (1) SG188721A1 (fr)
TW (1) TWI567825B (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010029299B4 (de) † 2010-05-26 2023-06-29 Robert Bosch Gmbh Verfahren zum Betreiben eines Systems, System, Steuerung und Computergrogrammprodukt
CN108766873B (zh) 2011-01-25 2023-04-07 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
EP2695182B1 (fr) * 2011-04-08 2016-03-30 Ev Group E. Thallner GmbH Procédé de liaison permanente de plaquettes de semi-conducteurs
EP2695183A1 (fr) * 2011-04-08 2014-02-12 Ev Group E. Thallner GmbH Procédé de liaison permanente de plaquettes de semi-conducteurs
FR2993095B1 (fr) * 2012-07-03 2014-08-08 Commissariat Energie Atomique Detachement d’une couche autoportee de silicium <100>
FR2995136B1 (fr) * 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
FR3012258A1 (fr) * 2013-10-23 2015-04-24 St Microelectronics Crolles 2 Procede de realisation de transistors nmos et pmos sur un substrat du type soi, en particulier fdsoi, et circuit integre correspondant
EP4170705A3 (fr) 2014-11-18 2023-10-18 GlobalWafers Co., Ltd. Tranche semi-conductrice sur isolant à haute résistivité et procédé de fabrication
WO2016081367A1 (fr) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited Substrat de silicium sur isolant de grande résistivité comprenant une couche de piégeage de charge formée par co-implantation he-n2
FR3029352B1 (fr) * 2014-11-27 2017-01-06 Soitec Silicon On Insulator Procede d'assemblage de deux substrats
CN107533953B (zh) 2015-03-03 2021-05-11 环球晶圆股份有限公司 具有可控膜应力的在硅衬底上沉积电荷捕获多晶硅膜的方法
EP3304586B1 (fr) 2015-06-01 2020-10-07 GlobalWafers Co., Ltd. Procédé de fabrication de silicium-germanium sur isolant
CN117198983A (zh) 2015-11-20 2023-12-08 环球晶圆股份有限公司 使半导体表面平整的制造方法
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
WO2017155806A1 (fr) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Structure de semi-conducteur sur isolant contenant une couche d'oxyde de plasma et son procédé de fabrication
US11848227B2 (en) 2016-03-07 2023-12-19 Globalwafers Co., Ltd. Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
CN116314384A (zh) 2016-06-08 2023-06-23 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
FR3057705B1 (fr) * 2016-10-13 2019-04-12 Soitec Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant
FR3079659B1 (fr) * 2018-03-29 2020-03-13 Soitec Procede de fabrication d'un substrat donneur pour la realisation d'une structure integree en trois dimensions et procede de fabrication d'une telle structure integree
US10818540B2 (en) 2018-06-08 2020-10-27 Globalwafers Co., Ltd. Method for transfer of a thin layer of silicon
FR3099291A1 (fr) 2019-07-23 2021-01-29 Soitec procédé de préparation d’une couche mince, incluant une séquence d’étapes pour ameliorer l’uniformité d’epaisseur de ladite couche mince
CN112735964B (zh) * 2020-12-23 2023-12-22 武汉新芯集成电路制造有限公司 晶圆表面缺陷检测及表面修复方法
CN113421849B (zh) * 2021-06-09 2023-01-03 中环领先半导体材料有限公司 一种带绝缘埋层的硅衬底的制备工艺

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
DE10124030A1 (de) * 2001-05-16 2002-11-21 Atmel Germany Gmbh Verfahren zur Herstellung eines Silizium-Wafers
WO2003046993A1 (fr) * 2001-11-29 2003-06-05 Shin-Etsu Handotai Co.,Ltd. Procede de production de plaquettes soi
FR2867307B1 (fr) * 2004-03-05 2006-05-26 Soitec Silicon On Insulator Traitement thermique apres detachement smart-cut
FR2867310B1 (fr) 2004-03-05 2006-05-26 Soitec Silicon On Insulator Technique d'amelioration de la qualite d'une couche mince prelevee
FR2896619B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite a proprietes electriques ameliorees
EP1818976A1 (fr) * 2006-02-14 2007-08-15 S.O.I.Tec Silicon on Insulator Technologies Procédé de transfert d'une couche mince formée dans un substrat présentant des amas de lacunes
FR2911429B1 (fr) 2007-01-11 2009-04-17 Soitec Silicon On Insulator "procede et systeme de detection d'amas de defauts a la surface d'un substrat"
JP5303883B2 (ja) * 2007-09-04 2013-10-02 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造装置及び製造方法
US20100022070A1 (en) * 2008-07-22 2010-01-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
FR2938118B1 (fr) 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de fabrication d'un empilement de couches minces semi-conductrices
FR2938119B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de detachement de couches semi-conductrices a basse temperature
JP5496608B2 (ja) * 2008-11-12 2014-05-21 信越化学工業株式会社 Ｓｏｉ基板の作製方法
JP5493343B2 (ja) * 2008-12-04 2014-05-14 信越半導体株式会社 貼り合わせウェーハの製造方法
EP2200077B1 (fr) * 2008-12-22 2012-12-05 Soitec Procédé pour la liaison de deux substrats
WO2010150671A1 (fr) * 2009-06-24 2010-12-29 Semiconductor Energy Laboratory Co., Ltd. Procédé de retraitement d'un substrat semi-conducteur et procédé de fabrication d'un substrat soi
JP5643509B2 (ja) * 2009-12-28 2014-12-17 信越化学工業株式会社 応力を低減したｓｏｓ基板の製造方法

Also Published As

Publication number Publication date
JP2013080917A (ja) 2013-05-02
JP6139081B2 (ja) 2017-05-31
EP2579303B1 (fr) 2014-12-03
KR101970221B1 (ko) 2019-08-13
CN103035562A (zh) 2013-04-10
US20130207244A1 (en) 2013-08-15
TW201316412A (zh) 2013-04-16
CN103035562B (zh) 2016-12-21
TWI567825B (zh) 2017-01-21
EP2579303A1 (fr) 2013-04-10
SG188721A1 (en) 2013-04-30
US9230848B2 (en) 2016-01-05
KR20130036155A (ko) 2013-04-11
FR2980916A1 (fr) 2013-04-05

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