FR3057705B1 - Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant - Google Patents

Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant Download PDF

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Publication number
FR3057705B1
FR3057705B1 FR1659917A FR1659917A FR3057705B1 FR 3057705 B1 FR3057705 B1 FR 3057705B1 FR 1659917 A FR1659917 A FR 1659917A FR 1659917 A FR1659917 A FR 1659917A FR 3057705 B1 FR3057705 B1 FR 3057705B1
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Prior art keywords
silicon
dissolving
oxide
bleed
layer
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FR1659917A
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English (en)
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FR3057705A1 (fr
Inventor
Frederic Allibert
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Soitec SA
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Soitec SA
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Priority to FR1659917A priority Critical patent/FR3057705B1/fr
Priority to TW106133228A priority patent/TWI641040B/zh
Priority to PCT/EP2017/074823 priority patent/WO2018069067A1/fr
Priority to CN201780063006.5A priority patent/CN109844911B/zh
Priority to KR1020197011145A priority patent/KR102217707B1/ko
Priority to JP2019518498A priority patent/JP6801154B2/ja
Priority to US16/342,133 priority patent/US10847370B2/en
Priority to DE112017005180.0T priority patent/DE112017005180T5/de
Priority to SG11201903019XA priority patent/SG11201903019XA/en
Publication of FR3057705A1 publication Critical patent/FR3057705A1/fr
Application granted granted Critical
Publication of FR3057705B1 publication Critical patent/FR3057705B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

La présente invention porte sur un procédé de dissolution d'un oxyde enterré dans une plaquette de silicium sur isolant, comprenant la fourniture d'une plaquette de silicium sur isolant (100, 300, 400, 500) ayant une couche de silicium (101, 301, 401, 501) fixée à un substrat de support (103, 303, 403, 503) par l'intermédiaire d'une couche d'oxyde enterrée (102, 302, 402, 502), et le recuit de ladite plaquette de silicium sur isolant (100, 300, 400, 500) pour dissoudre au moins partiellement la couche d'oxyde enterrée (102, 302, 402, 502). Le procédé inventif comprend en outre une étape de prévoir une couche de piégeage d'oxygène (104, 304, 404, 504) sur ou au-dessus de la couche de silicium (101, 301, 401, 501) avant l'étape de recuit.
FR1659917A 2016-10-13 2016-10-13 Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant Active FR3057705B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1659917A FR3057705B1 (fr) 2016-10-13 2016-10-13 Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant
TW106133228A TWI641040B (zh) 2016-10-13 2017-09-27 用於溶解絕緣體上矽晶圓中埋置氧化物之方法
CN201780063006.5A CN109844911B (zh) 2016-10-13 2017-09-29 用于在绝缘体上硅晶圆中溶解埋置氧化物的方法
KR1020197011145A KR102217707B1 (ko) 2016-10-13 2017-09-29 실리콘-온-절연체 웨이퍼 내의 매립 산화물을 용해시키기 위한 방법
PCT/EP2017/074823 WO2018069067A1 (fr) 2016-10-13 2017-09-29 Procédé de dissolution d'un oxyde enfoui dans une tranche de silicium sur isolant
JP2019518498A JP6801154B2 (ja) 2016-10-13 2017-09-29 シリコンオンインシュレータウェハの埋め込み酸化膜を溶解するための方法
US16/342,133 US10847370B2 (en) 2016-10-13 2017-09-29 Method for dissolving a buried oxide in a silicon-on-insulator wafer
DE112017005180.0T DE112017005180T5 (de) 2016-10-13 2017-09-29 Verfahren zum Auflösen eines vergrabenen Oxids in einem Silicon-On-Insulator-Wafer
SG11201903019XA SG11201903019XA (en) 2016-10-13 2017-09-29 Method for dissolving a buried oxide in a silicon-on-insulator wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1659917A FR3057705B1 (fr) 2016-10-13 2016-10-13 Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant
FR1659917 2016-10-13

Publications (2)

Publication Number Publication Date
FR3057705A1 FR3057705A1 (fr) 2018-04-20
FR3057705B1 true FR3057705B1 (fr) 2019-04-12

Family

ID=57583305

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1659917A Active FR3057705B1 (fr) 2016-10-13 2016-10-13 Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant

Country Status (9)

Country Link
US (1) US10847370B2 (fr)
JP (1) JP6801154B2 (fr)
KR (1) KR102217707B1 (fr)
CN (1) CN109844911B (fr)
DE (1) DE112017005180T5 (fr)
FR (1) FR3057705B1 (fr)
SG (1) SG11201903019XA (fr)
TW (1) TWI641040B (fr)
WO (1) WO2018069067A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11069560B2 (en) * 2016-11-01 2021-07-20 Shin-Etsu Chemical Co., Ltd. Method of transferring device layer to transfer substrate and highly thermal conductive substrate

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078116A (ja) * 2001-08-31 2003-03-14 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
US6784072B2 (en) * 2002-07-22 2004-08-31 International Business Machines Corporation Control of buried oxide in SIMOX
US6664598B1 (en) * 2002-09-05 2003-12-16 International Business Machines Corporation Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
US20050170570A1 (en) * 2004-01-30 2005-08-04 International Business Machines Corporation High electrical quality buried oxide in simox
US8138061B2 (en) * 2005-01-07 2012-03-20 International Business Machines Corporation Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide
US7867906B2 (en) * 2005-06-22 2011-01-11 Nec Corporation Semiconductor device and method for manufacturing same
JP2007180416A (ja) * 2005-12-28 2007-07-12 Siltronic Ag Ｓｏｉウェーハの製造方法
FR2936356B1 (fr) * 2008-09-23 2010-10-22 Soitec Silicon On Insulator Procede de dissolution locale de la couche d'oxyde dans une structure de type semi-conducteur sur isolant
FR2937794A1 (fr) * 2008-10-28 2010-04-30 Soitec Silicon On Insulator Procede de traitement d'une structure de type semi-conducteur sur isolant par dissolution selective de sa couche d'oxyde
FR2938118B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de fabrication d'un empilement de couches minces semi-conductrices
FR2941324B1 (fr) * 2009-01-22 2011-04-29 Soitec Silicon On Insulator Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant.
US20100244206A1 (en) 2009-03-31 2010-09-30 International Business Machines Corporation Method and structure for threshold voltage control and drive current improvement for high-k metal gate transistors
EP2381470B1 (fr) * 2010-04-22 2012-08-22 Soitec Dispositif semi-conducteur comprenant un transistor à effet de champ dans une structure silicium sur isolant
US8796116B2 (en) * 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
JP2012204501A (ja) * 2011-03-24 2012-10-22 Sony Corp 半導体装置、電子デバイス、及び、半導体装置の製造方法
FR2980916B1 (fr) * 2011-10-03 2014-03-28 Soitec Silicon On Insulator Procede de fabrication d'une structure de type silicium sur isolant
US8637381B2 (en) * 2011-10-17 2014-01-28 International Business Machines Corporation High-k dielectric and silicon nitride box region
JP2013157586A (ja) * 2012-01-27 2013-08-15 Mtec:Kk 化合物半導体
US8633118B2 (en) * 2012-02-01 2014-01-21 Tokyo Electron Limited Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging
FR3003684B1 (fr) 2013-03-25 2015-03-27 Soitec Silicon On Insulator Procede de dissolution d'une couche de dioxyde de silicium.
KR102336517B1 (ko) 2015-09-24 2021-12-07 에스케이텔레콤 주식회사 심볼 입력 방법 및 그 장치

Also Published As

Publication number Publication date
JP2019535144A (ja) 2019-12-05
DE112017005180T5 (de) 2019-07-04
CN109844911A (zh) 2019-06-04
TW201814785A (zh) 2018-04-16
CN109844911B (zh) 2023-03-24
FR3057705A1 (fr) 2018-04-20
TWI641040B (zh) 2018-11-11
JP6801154B2 (ja) 2020-12-16
KR20190047083A (ko) 2019-05-07
KR102217707B1 (ko) 2021-02-19
US20190259617A1 (en) 2019-08-22
WO2018069067A1 (fr) 2018-04-19
SG11201903019XA (en) 2019-05-30
US10847370B2 (en) 2020-11-24

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