JP2019535144A - シリコンオンインシュレータウェハの埋め込み酸化膜を溶解するための方法 - Google Patents
シリコンオンインシュレータウェハの埋め込み酸化膜を溶解するための方法 Download PDFInfo
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- JP2019535144A JP2019535144A JP2019518498A JP2019518498A JP2019535144A JP 2019535144 A JP2019535144 A JP 2019535144A JP 2019518498 A JP2019518498 A JP 2019518498A JP 2019518498 A JP2019518498 A JP 2019518498A JP 2019535144 A JP2019535144 A JP 2019535144A
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- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000012212 insulator Substances 0.000 title claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 125
- 239000001301 oxygen Substances 0.000 claims abstract description 125
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 125
- 230000002000 scavenging effect Effects 0.000 claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 238000000137 annealing Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 77
- 238000009792 diffusion process Methods 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 238000002844 melting Methods 0.000 description 29
- 230000008018 melting Effects 0.000 description 29
- 238000004090 dissolution Methods 0.000 description 20
- 238000000151 deposition Methods 0.000 description 15
- 230000008901 benefit Effects 0.000 description 13
- 238000011978 dissolution method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000010561 standard procedure Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- -1 lanthanide metals Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/2251—Diffusion into or out of group IV semiconductors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
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Abstract
Description
Claims (11)
- シリコンオンインシュレータウェハの埋め込み酸化膜を溶解するための方法であって、
埋め込み酸化膜層(102、302、402、502)を介してキャリア基板(103、303、403、503)に張り付けられたシリコン層(101、301、401、501)を有するシリコンオンインシュレータウェハ(100、300、400、500)を用意するステップと、
前記シリコンオンインシュレータウェハ(100、300、400、500)をアニールして、前記埋め込み酸化膜層(102、302、402、502)を少なくとも部分的に溶解するステップと、
を含む方法において、
前記アニールステップの前に、前記シリコン層(101、301、401、501)上に又は前記シリコン層(101、301、401、501)を覆って酸素スカベンジング層(104、304、404、504)を設けるステップをさらに含むことを特徴とする、方法。 - 前記シリコン層(101、301、401、501)が、約150nm以下、特に約50nm以下、さらに特に約25nm以下、さらにより特に約10nmの厚さ(hSi)を有する、請求項1に記載の方法。
- 前記シリコン層(101、301、401、501)が、歪み層である、請求項1又は2に記載の方法。
- 前記酸素スカベンジング層(104、304、404、504)が、溶解すべき前記埋め込み酸化膜層(102、302、402、502)の少なくとも所定の厚さを溶解するために適合した厚さ(hscav)を有する、請求項1〜3のいずれか一項に記載の方法。
- 前記酸素スカベンジング層(104、304、404、504)が、HfO2の化学量論よりも過剰な所定の量のHfをもった準化学量論的HfO2を含む、すなわちx<2であるHfOxである、請求項1〜4のいずれか一項に記載の方法。
- 前記酸素スカベンジング層(104、304、404、504)が、ランタニド金属、希土類金属、チタンリッチ(Tiリッチ)の窒化チタン(TiN)、2族元素、及び3族元素のうちの少なくとも1つからさらに選択される、請求項1〜5のいずれか一項に記載の方法。
- アニールする前記ステップの前に、前記酸素スカベンジング層(404)の最上部に及び/又は前記酸素スカベンジング層(504)と前記シリコン層(501)との間に拡散バリア層(405、505)を設けるステップをさらに含む、請求項1〜6のいずれか一項に記載の方法。
- 前記拡散バリア層(405)が前記酸素スカベンジング層(404)の最上部に、特に、前記酸素スカベンジング層の最上部に直接設けられるときに、前記拡散バリア層(405)が酸素拡散バリア層、特に窒化シリコンの層である、請求項7に記載の方法。
- 前記拡散バリア層(505)が前記酸素スカベンジング層(504)と前記シリコン層(501)との間に設けられるときに、前記拡散バリア層(505)が、前記シリコン層(501)中への酸素スカベンジング元素の拡散を防止するように選択される、特に化学量論的HfO2の層である、請求項7又は8に記載の方法。
- アニールする前記ステップが、標準的な炉内で、特に酸素気密でない炉内で実行される、請求項1〜9のいずれか一項に記載の方法。
- 前記シリコンオンインシュレータウェハ(100、300、400、500)を用意する前記ステップが、イオン注入による層移転技術を使用して前記キャリア基板(103、303、403、503)上へと前記シリコンの層(101、301、401、501)を移転するステップを含む、請求項1〜10のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1659917A FR3057705B1 (fr) | 2016-10-13 | 2016-10-13 | Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant |
FR1659917 | 2016-10-13 | ||
PCT/EP2017/074823 WO2018069067A1 (en) | 2016-10-13 | 2017-09-29 | Method for dissolving a buried oxide in a silicon-on-insulator wafer |
Publications (2)
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JP2019535144A true JP2019535144A (ja) | 2019-12-05 |
JP6801154B2 JP6801154B2 (ja) | 2020-12-16 |
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JP2019518498A Active JP6801154B2 (ja) | 2016-10-13 | 2017-09-29 | シリコンオンインシュレータウェハの埋め込み酸化膜を溶解するための方法 |
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US (1) | US10847370B2 (ja) |
JP (1) | JP6801154B2 (ja) |
KR (1) | KR102217707B1 (ja) |
CN (1) | CN109844911B (ja) |
DE (1) | DE112017005180T5 (ja) |
FR (1) | FR3057705B1 (ja) |
SG (1) | SG11201903019XA (ja) |
TW (1) | TWI641040B (ja) |
WO (1) | WO2018069067A1 (ja) |
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US11069560B2 (en) * | 2016-11-01 | 2021-07-20 | Shin-Etsu Chemical Co., Ltd. | Method of transferring device layer to transfer substrate and highly thermal conductive substrate |
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WO2006137237A1 (ja) * | 2005-06-22 | 2006-12-28 | Nec Corporation | 半導体装置及びその製造方法 |
JP2007180416A (ja) * | 2005-12-28 | 2007-07-12 | Siltronic Ag | Soiウェーハの製造方法 |
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JP2016519432A (ja) * | 2013-03-25 | 2016-06-30 | ソイテック | 二酸化ケイ素層を分解する方法 |
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US6784072B2 (en) * | 2002-07-22 | 2004-08-31 | International Business Machines Corporation | Control of buried oxide in SIMOX |
US6664598B1 (en) * | 2002-09-05 | 2003-12-16 | International Business Machines Corporation | Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control |
US20050170570A1 (en) * | 2004-01-30 | 2005-08-04 | International Business Machines Corporation | High electrical quality buried oxide in simox |
US8138061B2 (en) * | 2005-01-07 | 2012-03-20 | International Business Machines Corporation | Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide |
FR2936356B1 (fr) * | 2008-09-23 | 2010-10-22 | Soitec Silicon On Insulator | Procede de dissolution locale de la couche d'oxyde dans une structure de type semi-conducteur sur isolant |
FR2937794A1 (fr) * | 2008-10-28 | 2010-04-30 | Soitec Silicon On Insulator | Procede de traitement d'une structure de type semi-conducteur sur isolant par dissolution selective de sa couche d'oxyde |
FR2938118B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de fabrication d'un empilement de couches minces semi-conductrices |
FR2941324B1 (fr) * | 2009-01-22 | 2011-04-29 | Soitec Silicon On Insulator | Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant. |
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FR2980916B1 (fr) * | 2011-10-03 | 2014-03-28 | Soitec Silicon On Insulator | Procede de fabrication d'une structure de type silicium sur isolant |
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- 2017-09-29 WO PCT/EP2017/074823 patent/WO2018069067A1/en active Application Filing
- 2017-09-29 CN CN201780063006.5A patent/CN109844911B/zh active Active
- 2017-09-29 KR KR1020197011145A patent/KR102217707B1/ko active IP Right Grant
- 2017-09-29 US US16/342,133 patent/US10847370B2/en active Active
- 2017-09-29 DE DE112017005180.0T patent/DE112017005180T5/de active Pending
Patent Citations (5)
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WO2006137237A1 (ja) * | 2005-06-22 | 2006-12-28 | Nec Corporation | 半導体装置及びその製造方法 |
JP2007180416A (ja) * | 2005-12-28 | 2007-07-12 | Siltronic Ag | Soiウェーハの製造方法 |
JP2012204501A (ja) * | 2011-03-24 | 2012-10-22 | Sony Corp | 半導体装置、電子デバイス、及び、半導体装置の製造方法 |
JP2013157586A (ja) * | 2012-01-27 | 2013-08-15 | Mtec:Kk | 化合物半導体 |
JP2016519432A (ja) * | 2013-03-25 | 2016-06-30 | ソイテック | 二酸化ケイ素層を分解する方法 |
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Publication number | Publication date |
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DE112017005180T5 (de) | 2019-07-04 |
CN109844911A (zh) | 2019-06-04 |
TW201814785A (zh) | 2018-04-16 |
CN109844911B (zh) | 2023-03-24 |
FR3057705B1 (fr) | 2019-04-12 |
FR3057705A1 (fr) | 2018-04-20 |
TWI641040B (zh) | 2018-11-11 |
JP6801154B2 (ja) | 2020-12-16 |
KR20190047083A (ko) | 2019-05-07 |
KR102217707B1 (ko) | 2021-02-19 |
US20190259617A1 (en) | 2019-08-22 |
WO2018069067A1 (en) | 2018-04-19 |
SG11201903019XA (en) | 2019-05-30 |
US10847370B2 (en) | 2020-11-24 |
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