FR2973159B1 - Procede de fabrication d'un substrat de base - Google Patents
Procede de fabrication d'un substrat de baseInfo
- Publication number
- FR2973159B1 FR2973159B1 FR1152353A FR1152353A FR2973159B1 FR 2973159 B1 FR2973159 B1 FR 2973159B1 FR 1152353 A FR1152353 A FR 1152353A FR 1152353 A FR1152353 A FR 1152353A FR 2973159 B1 FR2973159 B1 FR 2973159B1
- Authority
- FR
- France
- Prior art keywords
- base substrate
- manufacturing base
- manufacturing
- substrate
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76262—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using selective deposition of single crystal silicon, i.e. SEG techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1152353A FR2973159B1 (fr) | 2011-03-22 | 2011-03-22 | Procede de fabrication d'un substrat de base |
TW101107519A TWI458020B (zh) | 2011-03-22 | 2012-03-06 | 供絕緣體上半導體類型底材所用之基底底材之製造方法 |
SG2012016770A SG184651A1 (en) | 2011-03-22 | 2012-03-09 | Method of manufacturing a base substrate for a semi-conductor on insulator type substrate |
KR1020120027527A KR101379885B1 (ko) | 2011-03-22 | 2012-03-19 | 반도체 온 절연체형 기판을 위한 베이스 기판의 제조 방법 |
CN201210074558.5A CN102693933B (zh) | 2011-03-22 | 2012-03-20 | 用于绝缘体型衬底上的半导体的基础衬底的制造方法 |
US13/426,190 US8765571B2 (en) | 2011-03-22 | 2012-03-21 | Method of manufacturing a base substrate for a semi-conductor on insulator type substrate |
JP2012064056A JP5726796B2 (ja) | 2011-03-22 | 2012-03-21 | 絶縁体上の半導体タイプの基板のためのベース基板を製造する方法 |
EP12160793A EP2503592A1 (fr) | 2011-03-22 | 2012-03-22 | Procédé de fabrication d'un substrat de base pour un substrat de type semi-conducteur sur isolant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1152353A FR2973159B1 (fr) | 2011-03-22 | 2011-03-22 | Procede de fabrication d'un substrat de base |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2973159A1 FR2973159A1 (fr) | 2012-09-28 |
FR2973159B1 true FR2973159B1 (fr) | 2013-04-19 |
Family
ID=45841392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1152353A Active FR2973159B1 (fr) | 2011-03-22 | 2011-03-22 | Procede de fabrication d'un substrat de base |
Country Status (8)
Country | Link |
---|---|
US (1) | US8765571B2 (fr) |
EP (1) | EP2503592A1 (fr) |
JP (1) | JP5726796B2 (fr) |
KR (1) | KR101379885B1 (fr) |
CN (1) | CN102693933B (fr) |
FR (1) | FR2973159B1 (fr) |
SG (1) | SG184651A1 (fr) |
TW (1) | TWI458020B (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2987166B1 (fr) | 2012-02-16 | 2017-05-12 | Soitec Silicon On Insulator | Procede de transfert d'une couche |
CN103296013B (zh) * | 2013-05-28 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | 射频器件的形成方法 |
US8951896B2 (en) | 2013-06-28 | 2015-02-10 | International Business Machines Corporation | High linearity SOI wafer for low-distortion circuit applications |
WO2016081367A1 (fr) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | Substrat de silicium sur isolant de grande résistivité comprenant une couche de piégeage de charge formée par co-implantation he-n2 |
WO2016081356A1 (fr) | 2014-11-18 | 2016-05-26 | Sunedison Semiconductor Limited | Plaquette semi-conducteur sur isolant haute résistivité et procédé de fabrication |
EP3367424B1 (fr) * | 2015-03-03 | 2022-10-19 | GlobalWafers Co., Ltd. | Films de silicium polycristallin de piégeage de charge sur des substrats de silicium avec une contrainte de film controlable |
JP6637515B2 (ja) | 2015-03-17 | 2020-01-29 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 半導体オン・インシュレータ構造の製造において使用するための熱的に安定した電荷トラップ層 |
US10304722B2 (en) | 2015-06-01 | 2019-05-28 | Globalwafers Co., Ltd. | Method of manufacturing semiconductor-on-insulator |
WO2016196011A1 (fr) | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | Procédé de fabrication de silicium-germanium sur isolant |
JP6353814B2 (ja) | 2015-06-09 | 2018-07-04 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
CN105261586B (zh) * | 2015-08-25 | 2018-05-25 | 上海新傲科技股份有限公司 | 带有电荷陷阱和绝缘埋层衬底的制备方法 |
CN117198983A (zh) | 2015-11-20 | 2023-12-08 | 环球晶圆股份有限公司 | 使半导体表面平整的制造方法 |
WO2017214084A1 (fr) | 2016-06-08 | 2017-12-14 | Sunedison Semiconductor Limited | Lingot et plaquette de silicium monocristallin à résistivité élevée présentant une résistance mécanique améliorée |
US10269617B2 (en) | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
SG11201903090SA (en) | 2016-10-26 | 2019-05-30 | Globalwafers Co Ltd | High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency |
FR3066858B1 (fr) * | 2017-05-23 | 2019-06-21 | Soitec | Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence |
CN108987250B (zh) * | 2017-06-02 | 2021-08-17 | 上海新昇半导体科技有限公司 | 衬底及其制作方法 |
US10468486B2 (en) * | 2017-10-30 | 2019-11-05 | Taiwan Semiconductor Manufacturing Company Ltd. | SOI substrate, semiconductor device and method for manufacturing the same |
JP6834932B2 (ja) * | 2017-12-19 | 2021-02-24 | 株式会社Sumco | 貼り合わせウェーハ用の支持基板の製造方法および貼り合わせウェーハの製造方法 |
EP4210092A1 (fr) | 2018-06-08 | 2023-07-12 | GlobalWafers Co., Ltd. | Procédé de transfert d'une couche mince de silicium |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
FR3129029B1 (fr) | 2021-11-09 | 2023-09-29 | Soitec Silicon On Insulator | Procede de preparation d’un substrat support muni d’une couche de piegeage de charges |
FR3129028B1 (fr) | 2021-11-09 | 2023-11-10 | Soitec Silicon On Insulator | Procede de preparation d’un substrat support muni d’une couche de piegeage de charges |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0648686B2 (ja) * | 1988-03-30 | 1994-06-22 | 新日本製鐵株式会社 | ゲッタリング能力の優れたシリコンウェーハおよびその製造方法 |
JP3076202B2 (ja) * | 1994-07-12 | 2000-08-14 | 三菱マテリアルシリコン株式会社 | Eg用ポリシリコン膜の被着方法 |
JPH10335615A (ja) * | 1997-05-22 | 1998-12-18 | Harris Corp | 半導体デバイスに関する改良 |
KR100434537B1 (ko) * | 1999-03-31 | 2004-06-05 | 삼성전자주식회사 | 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법 |
JP3676958B2 (ja) * | 1999-12-28 | 2005-07-27 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
AU2002322966A1 (en) * | 2002-03-20 | 2003-09-29 | Ecole Polytechnique Federale De Lausanne (Epfl) | Process for manufacturing mems |
FR2838865B1 (fr) | 2002-04-23 | 2005-10-14 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee |
US7535100B2 (en) * | 2002-07-12 | 2009-05-19 | The United States Of America As Represented By The Secretary Of The Navy | Wafer bonding of thinned electronic materials and circuits to high performance substrates |
KR100524197B1 (ko) * | 2003-04-29 | 2005-10-27 | 삼성전자주식회사 | 매엽식 반도체 소자 제조장치 및 이를 이용한 게이트 전극및 콘택 전극의 연속 형성방법 |
US7112509B2 (en) * | 2003-05-09 | 2006-09-26 | Ibis Technology Corporation | Method of producing a high resistivity SIMOX silicon substrate |
WO2005031842A2 (fr) * | 2003-09-26 | 2005-04-07 | Universite Catholique De Louvain | Procede de fabrication d'une structure semiconductrice multicouche a pertes ohmiques reduites |
JP2007056336A (ja) * | 2005-08-25 | 2007-03-08 | Tokyo Electron Ltd | 基板処理装置,基板処理装置の基板搬送方法,プログラム,プログラムを記録した記録媒体 |
US20070190681A1 (en) | 2006-02-13 | 2007-08-16 | Sharp Laboratories Of America, Inc. | Silicon-on-insulator near infrared active pixel sensor array |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
US20070286956A1 (en) * | 2006-04-07 | 2007-12-13 | Applied Materials, Inc. | Cluster tool for epitaxial film formation |
FR2933233B1 (fr) * | 2008-06-30 | 2010-11-26 | Soitec Silicon On Insulator | Substrat de haute resistivite bon marche et procede de fabrication associe |
FR2953640B1 (fr) * | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
-
2011
- 2011-03-22 FR FR1152353A patent/FR2973159B1/fr active Active
-
2012
- 2012-03-06 TW TW101107519A patent/TWI458020B/zh active
- 2012-03-09 SG SG2012016770A patent/SG184651A1/en unknown
- 2012-03-19 KR KR1020120027527A patent/KR101379885B1/ko active IP Right Grant
- 2012-03-20 CN CN201210074558.5A patent/CN102693933B/zh active Active
- 2012-03-21 JP JP2012064056A patent/JP5726796B2/ja active Active
- 2012-03-21 US US13/426,190 patent/US8765571B2/en active Active
- 2012-03-22 EP EP12160793A patent/EP2503592A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US8765571B2 (en) | 2014-07-01 |
EP2503592A1 (fr) | 2012-09-26 |
CN102693933A (zh) | 2012-09-26 |
JP2012199550A (ja) | 2012-10-18 |
JP5726796B2 (ja) | 2015-06-03 |
TW201239990A (en) | 2012-10-01 |
KR20120107863A (ko) | 2012-10-04 |
FR2973159A1 (fr) | 2012-09-28 |
CN102693933B (zh) | 2016-12-14 |
SG184651A1 (en) | 2012-10-30 |
TWI458020B (zh) | 2014-10-21 |
KR101379885B1 (ko) | 2014-04-01 |
US20120244687A1 (en) | 2012-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2973159B1 (fr) | Procede de fabrication d'un substrat de base | |
FR2957716B1 (fr) | Procede de finition d'un substrat de type semi-conducteur sur isolant | |
FR2944986B1 (fr) | Procede de polissage mecano-chimique d'un substrat | |
FR2973158B1 (fr) | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences | |
FR2969391B1 (fr) | Procédé de fabrication d'un dispositif oled | |
FR2969664B1 (fr) | Procede de clivage d'un substrat | |
FR2969521B1 (fr) | Procede pour former des trous de passage dans un substrat a haute temperature | |
FR2962429B1 (fr) | Procede de fabrication d'un composant amortissant les vibrations | |
FR2977069B1 (fr) | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire | |
FR2985089B1 (fr) | Transistor et procede de fabrication d'un transistor | |
FR2981871B1 (fr) | Procede de polissage d'un substrat | |
FR2994605B1 (fr) | Procede de fabrication de masques euv minimisant l'impact des defauts de substrat | |
FR2985734B1 (fr) | Composition de biocombustible et procede de fabrication d'un biocombustible | |
FR2964973B1 (fr) | Composition de polissage mecano-chimique concentrable stabilisee et procede de polissage d'un substrat l'utilisant | |
FR2963349B1 (fr) | Procede de fabrication de polyamide | |
FR2957339B1 (fr) | Procede de fabrication d'un microsysteme electromecanique | |
FR2984595B1 (fr) | Procede de fabrication d'un empilement mos sur un substrat en diamant | |
FR2990953B1 (fr) | Procede et installation de preparation d'un substrat de methanisation | |
FR2991207B1 (fr) | Procede de fabrication d'un materiau thermoelectrique | |
FI20115966A0 (fi) | Menetelmä piisubstraatin elinajan parantamiseksi | |
EP2763517A4 (fr) | Procédé de fabrication de substrat | |
FR2981064B1 (fr) | Procede de preparation d'un materiau sur un substrat par voie sol-gel | |
FR2960094B1 (fr) | Procede de fabrication de puces semiconductrices | |
FR2985262B1 (fr) | Procede de fabrication d'un film polyester bietire | |
EP2733125A4 (fr) | Procédé de fabrication d'un substrat de verre portant un film en couches |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20130109 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
PLFP | Fee payment |
Year of fee payment: 14 |