FR2994605B1 - Procede de fabrication de masques euv minimisant l'impact des defauts de substrat - Google Patents

Procede de fabrication de masques euv minimisant l'impact des defauts de substrat

Info

Publication number
FR2994605B1
FR2994605B1 FR1257892A FR1257892A FR2994605B1 FR 2994605 B1 FR2994605 B1 FR 2994605B1 FR 1257892 A FR1257892 A FR 1257892A FR 1257892 A FR1257892 A FR 1257892A FR 2994605 B1 FR2994605 B1 FR 2994605B1
Authority
FR
France
Prior art keywords
minimizing
impact
substrate defects
euv masks
manufacturing euv
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1257892A
Other languages
English (en)
Other versions
FR2994605A1 (fr
Inventor
Cyril Vannuffel
Jean-Louis Imbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1257892A priority Critical patent/FR2994605B1/fr
Priority to EP13179132.9A priority patent/EP2701005B1/fr
Priority to TW102128973A priority patent/TW201423257A/zh
Priority to JP2013169144A priority patent/JP2014039038A/ja
Priority to US13/970,252 priority patent/US9329472B2/en
Priority to KR1020130098363A priority patent/KR20140024230A/ko
Publication of FR2994605A1 publication Critical patent/FR2994605A1/fr
Application granted granted Critical
Publication of FR2994605B1 publication Critical patent/FR2994605B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0006—Industrial image inspection using a design-rule based approach

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
FR1257892A 2012-08-20 2012-08-20 Procede de fabrication de masques euv minimisant l'impact des defauts de substrat Expired - Fee Related FR2994605B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1257892A FR2994605B1 (fr) 2012-08-20 2012-08-20 Procede de fabrication de masques euv minimisant l'impact des defauts de substrat
EP13179132.9A EP2701005B1 (fr) 2012-08-20 2013-08-02 Procédé de fabrication de masques EUV minimisant l'impact des défauts de substrat
TW102128973A TW201423257A (zh) 2012-08-20 2013-08-13 使基板缺陷之影響達最小之極紫外線（ｅｕｖ）遮罩的製造方法
JP2013169144A JP2014039038A (ja) 2012-08-20 2013-08-16 基板の欠陥の影響を最小化するｅｕｖマスクの製作方法
US13/970,252 US9329472B2 (en) 2012-08-20 2013-08-19 Method for manufacturing EUV masks minimizing the impact of substrate defects
KR1020130098363A KR20140024230A (ko) 2012-08-20 2013-08-20 기판 결함들의 영향을 최소화하는 ｅｕｖ 마스크들을 제조하는 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1257892A FR2994605B1 (fr) 2012-08-20 2012-08-20 Procede de fabrication de masques euv minimisant l'impact des defauts de substrat

Publications (2)

Publication Number Publication Date
FR2994605A1 FR2994605A1 (fr) 2014-02-21
FR2994605B1 true FR2994605B1 (fr) 2014-08-22

Family

ID=46889320

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1257892A Expired - Fee Related FR2994605B1 (fr) 2012-08-20 2012-08-20 Procede de fabrication de masques euv minimisant l'impact des defauts de substrat

Country Status (6)

Country Link
US (1) US9329472B2 (fr)
EP (1) EP2701005B1 (fr)
JP (1) JP2014039038A (fr)
KR (1) KR20140024230A (fr)
FR (1) FR2994605B1 (fr)
TW (1) TW201423257A (fr)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
US9576099B2 (en) * 2014-03-03 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Minimizing harmful effects caused by reticle defects by re-arranging IC layout locally
CN103869598B (zh) * 2014-03-24 2017-05-10 上海华力微电子有限公司 离子注入层的光学临近效应修正方法
WO2015166570A1 (fr) * 2014-05-01 2015-11-05 ルネサスエレクトロニクス株式会社 Procédé et appareil de conception de topologie de circuit intégré à semi-conducteur
DE112016001162B4 (de) * 2015-03-12 2024-01-11 Bruker Nano, Inc. Verfahren zur Verbesserung einer Arbeitskennlinie und optischer Eigenschaften einer Fotomaske
US10416954B2 (en) * 2017-04-28 2019-09-17 Microsoft Technology Licensing, Llc Streaming of augmented/virtual reality spatial audio/video
DE102017212848A1 (de) 2017-07-26 2019-01-31 Carl Zeiss Sms Ltd. Verfahren und Vorrichtung zum Kompensieren von Defekten eines Maskenrohlings
US11119404B2 (en) * 2019-10-10 2021-09-14 Kla Corporation System and method for reducing printable defects on extreme ultraviolet pattern masks

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JP2001033941A (ja) * 1999-07-16 2001-02-09 Toshiba Corp パターン形成方法及び露光装置
FR2797060B1 (fr) * 1999-07-29 2001-09-14 Commissariat Energie Atomique Structure pour masque de lithographie en reflexion et procede pour sa realisation
JP3768786B2 (ja) * 2000-08-15 2006-04-19 株式会社ルネサステクノロジ ホトマスクの製造方法、ホトマスクブランクスの製造方法およびホトマスクの再生方法
US7226705B2 (en) * 2001-09-28 2007-06-05 Hoya Corporation Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
JP2004193269A (ja) * 2002-12-10 2004-07-08 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
US9002497B2 (en) * 2003-07-03 2015-04-07 Kla-Tencor Technologies Corp. Methods and systems for inspection of wafers and reticles using designer intent data
KR101022600B1 (ko) * 2004-06-22 2011-03-16 호야 가부시키가이샤 그레이 톤 마스크 블랭크, 그레이 톤 마스크 및 그 제조방법
US7303842B2 (en) * 2005-04-13 2007-12-04 Kla-Tencor Technologies Corporation Systems and methods for modifying a reticle's optical properties
FR2884965B1 (fr) * 2005-04-26 2007-06-08 Commissariat Energie Atomique Structure de blanc de masque ajustable pour masque euv a decalage de phase
FR2894691B1 (fr) * 2005-12-13 2008-01-18 Commissariat Energie Atomique Procede de fabrication de masque lithographique en reflexion et masque issu du procede
JP5042494B2 (ja) * 2005-12-22 2012-10-03 インテル コーポレイション 散乱光の角度分布を使ったマスクブランクの欠陥の検出および特性評価
JP4616864B2 (ja) * 2007-06-20 2011-01-19 株式会社日立ハイテクノロジーズ 外観検査方法及びその装置および画像処理評価システム
JP5046394B2 (ja) * 2007-08-07 2012-10-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、マスクの製造方法、及びマスクブランク用基板
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JP5155017B2 (ja) * 2008-05-29 2013-02-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
CN102804063B (zh) * 2009-06-19 2015-07-15 克拉-坦科技术股份有限公司 用于检测极紫外掩模基板上的缺陷的检验系统与方法
KR101812439B1 (ko) * 2009-07-16 2017-12-26 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크 및 전사용 마스크의 제조 방법
US9671685B2 (en) * 2009-12-31 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic plane check for mask processing
US8592102B2 (en) * 2009-12-31 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Cost-effective method for extreme ultraviolet (EUV) mask production
WO2011108470A1 (fr) * 2010-03-02 2011-09-09 旭硝子株式会社 Ébauche de masque du type réfléchissant pour lithographie aux euv, ainsi que procédé de production de celle-ci
JP5841710B2 (ja) * 2010-03-17 2016-01-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5537443B2 (ja) * 2011-01-04 2014-07-02 株式会社東芝 Ｅｕｖマスク用ブランクの良否判定方法及びｅｕｖマスクの製造方法
JP6000288B2 (ja) * 2011-03-15 2016-09-28 ケーエルエー−テンカー コーポレイション 反射性リソグラフィマスクブランクを検査し、マスク品質を向上させるための方法および装置
JP5684028B2 (ja) * 2011-03-31 2015-03-11 Hoya株式会社 転写用マスクの製造方法および半導体デバイスの製造方法
TWI588599B (zh) * 2011-04-06 2017-06-21 Ｈｏｙａ股份有限公司 空白光罩之表面處理方法、以及空白光罩之製造方法、以及光罩之製造方法
JP5758727B2 (ja) * 2011-07-15 2015-08-05 ルネサスエレクトロニクス株式会社 マスク検査方法、およびマスク検査装置
US8726202B2 (en) * 2012-04-13 2014-05-13 International Business Machines Corporation Mitigation of mask defects by pattern shifting
US8953869B2 (en) * 2012-06-14 2015-02-10 Kla-Tencor Corporation Apparatus and methods for inspecting extreme ultra violet reticles
US8932785B2 (en) * 2012-10-16 2015-01-13 Advanced Mask Technology Center Gmbh & Co. Kg EUV mask set and methods of manufacturing EUV masks and integrated circuits

Also Published As

Publication number Publication date
US20150024307A1 (en) 2015-01-22
JP2014039038A (ja) 2014-02-27
TW201423257A (zh) 2014-06-16
US9329472B2 (en) 2016-05-03
EP2701005B1 (fr) 2016-09-07
FR2994605A1 (fr) 2014-02-21
EP2701005A3 (fr) 2015-06-03
EP2701005A2 (fr) 2014-02-26
KR20140024230A (ko) 2014-02-28

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Year of fee payment: 5

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Effective date: 20180430