FR2996056B1 - Composant microelectronique vertical et son procede de fabrication - Google Patents

Composant microelectronique vertical et son procede de fabrication

Info

Publication number
FR2996056B1
FR2996056B1 FR1359006A FR1359006A FR2996056B1 FR 2996056 B1 FR2996056 B1 FR 2996056B1 FR 1359006 A FR1359006 A FR 1359006A FR 1359006 A FR1359006 A FR 1359006A FR 2996056 B1 FR2996056 B1 FR 2996056B1
Authority
FR
France
Prior art keywords
manufacturing
same
microelectronic component
vertical microelectronic
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1359006A
Other languages
English (en)
Other versions
FR2996056A1 (fr
Inventor
Christoph Schelling
Walter Daves
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2996056A1 publication Critical patent/FR2996056A1/fr
Application granted granted Critical
Publication of FR2996056B1 publication Critical patent/FR2996056B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7788—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
FR1359006A 2012-09-21 2013-09-19 Composant microelectronique vertical et son procede de fabrication Active FR2996056B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012217073.1A DE102012217073A1 (de) 2012-09-21 2012-09-21 Vertikales mikroelektronisches Bauelement und entsprechendes Herstellungsverfahren

Publications (2)

Publication Number Publication Date
FR2996056A1 FR2996056A1 (fr) 2014-03-28
FR2996056B1 true FR2996056B1 (fr) 2017-06-23

Family

ID=50235186

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1359006A Active FR2996056B1 (fr) 2012-09-21 2013-09-19 Composant microelectronique vertical et son procede de fabrication

Country Status (5)

Country Link
US (1) US9525056B2 (fr)
KR (1) KR20140038897A (fr)
CN (1) CN103681836B (fr)
DE (1) DE102012217073A1 (fr)
FR (1) FR2996056B1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9263555B2 (en) * 2014-07-03 2016-02-16 Globalfoundries Inc. Methods of forming a channel region for a semiconductor device by performing a triple cladding process
US10468406B2 (en) * 2014-10-08 2019-11-05 Northrop Grumman Systems Corporation Integrated enhancement mode and depletion mode device structure and method of making the same
US9515179B2 (en) * 2015-04-20 2016-12-06 Semiconductor Components Industries, Llc Electronic devices including a III-V transistor having a homostructure and a process of forming the same
CN106611781A (zh) * 2015-10-27 2017-05-03 上海新昇半导体科技有限公司 量子阱器件及其形成方法
CN105762078B (zh) * 2016-05-06 2018-11-16 西安电子科技大学 GaN基纳米沟道高电子迁移率晶体管及制作方法
US10170616B2 (en) * 2016-09-19 2019-01-01 Globalfoundries Inc. Methods of forming a vertical transistor device
US10936756B2 (en) 2017-01-20 2021-03-02 Northrop Grumman Systems Corporation Methodology for forming a resistive element in a superconducting structure
EP3404701A1 (fr) * 2017-05-15 2018-11-21 IMEC vzw Procédé permettant de définir une région de canal dans un dispositif à transistor vertical
JP7009954B2 (ja) * 2017-11-24 2022-01-26 日産自動車株式会社 半導体装置及びその製造方法
CN111816701A (zh) * 2019-04-12 2020-10-23 广东致能科技有限公司 一种半导体器件及其制造方法
CN117317001A (zh) * 2019-04-12 2023-12-29 广东致能科技有限公司 一种半导体器件及其制造方法
US20220223726A1 (en) * 2019-04-12 2022-07-14 Guangdong Zhineng Technologies, Co. Ltd. High electron mobility transistor (hemt) and method of manufacturing the same
CN113140628B (zh) * 2020-01-17 2023-09-29 广东致能科技有限公司 一种半导体器件及其制造方法
EP3944340A4 (fr) 2020-04-13 2022-08-24 Guangdong Zhineng Technology Co., Ltd. Dispositif à semi-conducteur en forme d'ailette, son procédé de fabrication et son utilisation
CN113611741B (zh) * 2021-08-02 2023-04-28 电子科技大学 一种具有鳍状结构的GaN HMET器件
CN113921609A (zh) * 2021-09-27 2022-01-11 深圳大学 一种垂直氮化镓场效应晶体管及其制备方法
CN116960175B (zh) * 2023-09-19 2023-12-12 广东致能科技有限公司 一种准垂直型半导体器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2842832B1 (fr) 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
DE102004058431B4 (de) * 2003-12-05 2021-02-18 Infineon Technologies Americas Corp. III-Nitrid Halbleitervorrichtung mit Grabenstruktur
US7098093B2 (en) * 2004-09-13 2006-08-29 Northrop Grumman Corporation HEMT device and method of making
JP2007335677A (ja) * 2006-06-15 2007-12-27 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いたノーマリオフ型電界効果トランジスタ及びその製造方法
JP5208463B2 (ja) * 2007-08-09 2013-06-12 ローム株式会社 窒化物半導体素子および窒化物半導体素子の製造方法
US8188513B2 (en) * 2007-10-04 2012-05-29 Stc.Unm Nanowire and larger GaN based HEMTS
CN101853882B (zh) * 2009-04-01 2016-03-23 台湾积体电路制造股份有限公司 具有改进的开关电流比的高迁移率多面栅晶体管
EP2317542B1 (fr) 2009-10-30 2018-05-23 IMEC vzw Dispositif de semi-conducteurs et son procédé de fabrication
US8637360B2 (en) * 2010-04-23 2014-01-28 Intersil Americas Inc. Power devices with integrated protection devices: structures and methods

Also Published As

Publication number Publication date
KR20140038897A (ko) 2014-03-31
CN103681836A (zh) 2014-03-26
FR2996056A1 (fr) 2014-03-28
DE102012217073A1 (de) 2014-03-27
US20140084299A1 (en) 2014-03-27
US9525056B2 (en) 2016-12-20
CN103681836B (zh) 2018-11-16

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