FR2996057B1 - Composant microelectronique et son procede de realisation - Google Patents

Composant microelectronique et son procede de realisation

Info

Publication number
FR2996057B1
FR2996057B1 FR1359172A FR1359172A FR2996057B1 FR 2996057 B1 FR2996057 B1 FR 2996057B1 FR 1359172 A FR1359172 A FR 1359172A FR 1359172 A FR1359172 A FR 1359172A FR 2996057 B1 FR2996057 B1 FR 2996057B1
Authority
FR
France
Prior art keywords
producing
same
microelectronic component
microelectronic
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1359172A
Other languages
English (en)
Other versions
FR2996057A1 (fr
Inventor
Christoph Schelling
Ando Feyh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2996057A1 publication Critical patent/FR2996057A1/fr
Application granted granted Critical
Publication of FR2996057B1 publication Critical patent/FR2996057B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Pressure Sensors (AREA)
FR1359172A 2012-09-24 2013-09-24 Composant microelectronique et son procede de realisation Expired - Fee Related FR2996057B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012217133.9A DE102012217133A1 (de) 2012-09-24 2012-09-24 Mikroelektronisches Bauelement und entsprechendes Herstellungsverfahren

Publications (2)

Publication Number Publication Date
FR2996057A1 FR2996057A1 (fr) 2014-03-28
FR2996057B1 true FR2996057B1 (fr) 2017-06-23

Family

ID=50235200

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1359172A Expired - Fee Related FR2996057B1 (fr) 2012-09-24 2013-09-24 Composant microelectronique et son procede de realisation

Country Status (5)

Country Link
US (1) US9082882B2 (fr)
KR (1) KR20140040025A (fr)
CN (1) CN103663359B (fr)
DE (1) DE102012217133A1 (fr)
FR (1) FR2996057B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704314B2 (en) * 2007-12-06 2014-04-22 Massachusetts Institute Of Technology Mechanical memory transistor
DE102011083644A1 (de) * 2011-09-28 2013-03-28 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung mit beweglichem Gate und entsprechendes Herstellungsverfahren
CN106865485B (zh) * 2015-12-10 2021-09-21 联华电子股份有限公司 微机电结构及其制作方法
US9899527B2 (en) * 2015-12-31 2018-02-20 Globalfoundries Singapore Pte. Ltd. Integrated circuits with gaps
DE102016203239A1 (de) * 2016-02-29 2017-08-31 Robert Bosch Gmbh Mikromechanische Sensorvorrichtung und entsprechendes Herstellungsverfahren
CN106365106B (zh) * 2016-09-23 2018-09-04 杭州士兰集成电路有限公司 Mems器件及其制造方法
DE102018221102B4 (de) 2018-12-06 2020-06-25 Robert Bosch Gmbh Inertialsensor mit einem beweglichen Detektionselement eines Feldeffekttransistors und Verfahren zum Herstellen desselben
US11016055B2 (en) * 2019-07-09 2021-05-25 Globalfoundries Singapore Pte. Ltd. Sensors with a front-end-of-line solution-receiving cavity

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4332843C2 (de) * 1993-09-27 1997-04-24 Siemens Ag Verfahren zur Herstellung einer mikromechanischen Vorrichtung und mikromechanische Vorrichtung
DE69626972T2 (de) * 1996-07-31 2004-01-08 Stmicroelectronics S.R.L., Agrate Brianza Integrierter kapazitiver Halbleiter-Beschleunigungsmessaufnehmer sowie Verfahren zu seiner Herstellung
DE19844676C1 (de) 1998-09-29 2000-08-03 Siemens Ag Mikromechanischer Sensor auf Basis des Feldeffekts und dessen Verwendung
JP4825778B2 (ja) * 2007-11-16 2011-11-30 株式会社日立製作所 半導体装置およびその製造方法
US8459128B2 (en) * 2008-04-15 2013-06-11 Indian Institute Of Science Sub-threshold elastic deflection FET sensor for sensing pressure/force, a method and system thereof
FR2932791B1 (fr) 2008-06-23 2010-06-18 Commissariat Energie Atomique Procede de realisation d'une structure comportant un element mobile au moyen d'une couche sacrificielle heterogene.
US8823007B2 (en) 2009-10-28 2014-09-02 MCube Inc. Integrated system on chip using multiple MEMS and CMOS devices
DE102009029217A1 (de) * 2009-09-04 2011-03-10 Robert Bosch Gmbh Inertialsensor mit einem Feldeffekttransistor
US8614492B2 (en) * 2009-10-26 2013-12-24 International Business Machines Corporation Nanowire stress sensors, stress sensor integrated circuits, and design structures for a stress sensor integrated circuit
US8502279B2 (en) * 2011-05-16 2013-08-06 Globalfoundries Singapore Pte. Ltd. Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates
FR2977885A1 (fr) * 2011-07-12 2013-01-18 Commissariat Energie Atomique Procede de realisation d'une structure a electrode enterree par report direct et structure ainsi obtenue
US8525278B2 (en) * 2011-08-19 2013-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device having chip scale packaging

Also Published As

Publication number Publication date
CN103663359B (zh) 2017-06-09
CN103663359A (zh) 2014-03-26
US20140084349A1 (en) 2014-03-27
FR2996057A1 (fr) 2014-03-28
US9082882B2 (en) 2015-07-14
KR20140040025A (ko) 2014-04-02
DE102012217133A1 (de) 2014-03-27

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