FI20115966A0 - Menetelmä piisubstraatin elinajan parantamiseksi - Google Patents

Menetelmä piisubstraatin elinajan parantamiseksi

Info

Publication number
FI20115966A0
FI20115966A0 FI20115966A FI20115966A FI20115966A0 FI 20115966 A0 FI20115966 A0 FI 20115966A0 FI 20115966 A FI20115966 A FI 20115966A FI 20115966 A FI20115966 A FI 20115966A FI 20115966 A0 FI20115966 A0 FI 20115966A0
Authority
FI
Finland
Prior art keywords
improving
life
silicon substrate
silicon
substrate
Prior art date
Application number
FI20115966A
Other languages
English (en)
Swedish (sv)
Other versions
FI126401B (fi
FI20115966A (fi
Inventor
Antti Haarahiltunen
Hele Savin
Marko Yli-Koski
Original Assignee
Aalto Korkeakoulusaeaetioe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aalto Korkeakoulusaeaetioe filed Critical Aalto Korkeakoulusaeaetioe
Priority to FI20115966A priority Critical patent/FI126401B/fi
Publication of FI20115966A0 publication Critical patent/FI20115966A0/fi
Priority to EP12836473.4A priority patent/EP2761666B1/en
Priority to CN201280054793.4A priority patent/CN105308757B/zh
Priority to US14/348,673 priority patent/US9306097B2/en
Priority to PCT/FI2012/050937 priority patent/WO2013045767A1/en
Publication of FI20115966A publication Critical patent/FI20115966A/fi
Application granted granted Critical
Publication of FI126401B publication Critical patent/FI126401B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FI20115966A 2011-09-30 2011-09-30 Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin FI126401B (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20115966A FI126401B (fi) 2011-09-30 2011-09-30 Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin
EP12836473.4A EP2761666B1 (en) 2011-09-30 2012-10-01 Method of decreasing an excess carrier induced degradation in a silicon substrate
CN201280054793.4A CN105308757B (zh) 2011-09-30 2012-10-01 用于减少硅衬底中的过量载流子引起的劣化的方法
US14/348,673 US9306097B2 (en) 2011-09-30 2012-10-01 Method for decreasing an excess carrier induced degradation in a silicon substrate
PCT/FI2012/050937 WO2013045767A1 (en) 2011-09-30 2012-10-01 Method for decreasing an excess carrier induced degradation in a silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20115966A FI126401B (fi) 2011-09-30 2011-09-30 Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin

Publications (3)

Publication Number Publication Date
FI20115966A0 true FI20115966A0 (fi) 2011-09-30
FI20115966A FI20115966A (fi) 2013-03-31
FI126401B FI126401B (fi) 2016-11-15

Family

ID=44718871

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20115966A FI126401B (fi) 2011-09-30 2011-09-30 Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin

Country Status (5)

Country Link
US (1) US9306097B2 (fi)
EP (1) EP2761666B1 (fi)
CN (1) CN105308757B (fi)
FI (1) FI126401B (fi)
WO (1) WO2013045767A1 (fi)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105008595B (zh) 2012-12-31 2018-04-13 Memc电子材料有限公司 通过直拉法制造铟掺杂硅
US9780252B2 (en) * 2014-10-17 2017-10-03 Tp Solar, Inc. Method and apparatus for reduction of solar cell LID
FR3074814B1 (fr) * 2017-12-12 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'extraction d'impuretes metalliques d'une plaquette de silicium cristallin
FR3074815B1 (fr) * 2017-12-12 2022-02-18 Commissariat Energie Atomique Procede d'extraction d'impuretes metalliques d'une plaquette de silicium cristallin
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JP2950728B2 (ja) * 1994-07-25 1999-09-20 大日本スクリーン製造株式会社 Ｂｔ処理装置及びｂｔ処理方法
US6133119A (en) * 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
US5760594A (en) 1996-09-30 1998-06-02 Vlsi Technology, Inc. Contamination monitoring using capacitance measurements on MOS structures
US6100167A (en) * 1997-05-29 2000-08-08 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron doped silicon wafers
US6482269B1 (en) 1997-05-29 2002-11-19 Memc Electronic Materials, Inc. Process for the removal of copper and other metallic impurities from silicon
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6249117B1 (en) * 1999-03-24 2001-06-19 Wafer Standards, Inc. Device for monitoring and calibrating oxide charge measurement equipment and method therefor
AU2001241919A1 (en) * 2000-03-03 2001-09-17 Midwest Research Institute A1 processing for impurity gettering in silicon
US20030104680A1 (en) * 2001-11-13 2003-06-05 Memc Electronic Materials, Inc. Process for the removal of copper from polished boron-doped silicon wafers
JP4877897B2 (ja) 2004-07-21 2012-02-15 シルトロニック・ジャパン株式会社 シリコンウェハの不純物の除去方法及び分析方法
JP2007095774A (ja) 2005-09-27 2007-04-12 Toshiba Ceramics Co Ltd 遷移金属不純物の洗浄除去方法
US7737004B2 (en) * 2006-07-03 2010-06-15 Semiconductor Components Industries Llc Multilayer gettering structure for semiconductor device and method
US8124502B2 (en) * 2008-10-23 2012-02-28 Applied Materials, Inc. Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
KR20110086833A (ko) * 2008-10-23 2011-08-01 어플라이드 머티어리얼스, 인코포레이티드 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비
US20110132444A1 (en) * 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof

Also Published As

Publication number Publication date
EP2761666A1 (en) 2014-08-06
EP2761666C0 (en) 2023-06-07
CN105308757A (zh) 2016-02-03
US20140238490A1 (en) 2014-08-28
FI126401B (fi) 2016-11-15
FI20115966A (fi) 2013-03-31
EP2761666A4 (en) 2015-07-01
WO2013045767A1 (en) 2013-04-04
EP2761666B1 (en) 2023-06-07
CN105308757B (zh) 2017-07-14
US9306097B2 (en) 2016-04-05

Similar Documents

Publication Publication Date Title
DK2732131T3 (da) Positioneringsfremgangsmåde
GB2492444B (en) Edge-exclusion spalling method for improving substrate reusability
GB2509683B (en) Flattened substrate surface for substrate bonding
TWI562366B (en) Manufacturing method of semiconductor device
BR112014007958A2 (pt) método
BR112014001237A2 (pt) método
BR112014001851A2 (pt) método
SG11201402630XA (en) Method for manufacturing soi wafer
EP2698426A4 (en) CELLULAR ADHESION PHOTOGRAPHING BASE MATERIAL
EP2532022A4 (en) METHOD FOR PRODUCING A GALLIUM NITRIDE WAFER
FI20125988A (fi) Menetelmä n-tyypin piisubstraatin modifioimiseksi
HK1201636A1 (en) Method of preparing the surface of metal substrates for organic photosensitive devices
GB2497664B (en) Substrates for semiconductor devices
FI20115966A0 (fi) Menetelmä piisubstraatin elinajan parantamiseksi
FI20115424A (fi) Menetelmä kohteen pinnan muokkaamiseksi
EP2775015A4 (en) METHOD OF MANUFACTURING A SIC-EINKRISTALL
TWI562219B (en) A method of manufacturing a sic substrate
EP2763517A4 (en) Substrate Preparation Process
DK2698366T3 (da) Fremgangsmåde til fremstilling af mandelonitrilforbindelse
IT1403828B1 (it) Procedimento per la stampa di un substrato
DK2782984T3 (da) Fremgangsmåde til fremstilling af biometan
EP2733125A4 (en) METHOD FOR MANUFACTURING A GLASS SUBSTRATE CARRYING A LAYERED FILM
SG11201401263PA (en) Method for manufacturing single-crystal silicon
SG11201403596PA (en) Method for manufacturing single-crystal silicon
EP2672508A4 (en) METHOD FOR MANUFACTURING SILICON WAFER ON INSULATION (SOI)

Legal Events

Date Code Title Description
FG Patent granted

Ref document number: 126401

Country of ref document: FI

Kind code of ref document: B