IT1403828B1 - Procedimento per la stampa di un substrato - Google Patents

Procedimento per la stampa di un substrato

Info

Publication number
IT1403828B1
IT1403828B1 ITUD2010A000223A ITUD20100223A IT1403828B1 IT 1403828 B1 IT1403828 B1 IT 1403828B1 IT UD2010A000223 A ITUD2010A000223 A IT UD2010A000223A IT UD20100223 A ITUD20100223 A IT UD20100223A IT 1403828 B1 IT1403828 B1 IT 1403828B1
Authority
IT
Italy
Prior art keywords
printing
procedure
substrate
Prior art date
Application number
ITUD2010A000223A
Other languages
English (en)
Inventor
Andrea Baccini
Marco Galiazzo
Original Assignee
Applied Materials Italia Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Italia Srl filed Critical Applied Materials Italia Srl
Priority to ITUD2010A000223A priority Critical patent/IT1403828B1/it
Priority to TW100143413A priority patent/TW201234622A/zh
Priority to PCT/EP2011/071181 priority patent/WO2012072579A1/en
Priority to CN2011104030638A priority patent/CN102529467A/zh
Publication of ITUD20100223A1 publication Critical patent/ITUD20100223A1/it
Application granted granted Critical
Publication of IT1403828B1 publication Critical patent/IT1403828B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Screen Printers (AREA)
ITUD2010A000223A 2010-12-02 2010-12-02 Procedimento per la stampa di un substrato IT1403828B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITUD2010A000223A IT1403828B1 (it) 2010-12-02 2010-12-02 Procedimento per la stampa di un substrato
TW100143413A TW201234622A (en) 2010-12-02 2011-11-25 Method for printing a substrate
PCT/EP2011/071181 WO2012072579A1 (en) 2010-12-02 2011-11-28 Method for printing a substrate
CN2011104030638A CN102529467A (zh) 2010-12-02 2011-12-02 用于印刷基板的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUD2010A000223A IT1403828B1 (it) 2010-12-02 2010-12-02 Procedimento per la stampa di un substrato

Publications (2)

Publication Number Publication Date
ITUD20100223A1 ITUD20100223A1 (it) 2012-06-03
IT1403828B1 true IT1403828B1 (it) 2013-10-31

Family

ID=43737502

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUD2010A000223A IT1403828B1 (it) 2010-12-02 2010-12-02 Procedimento per la stampa di un substrato

Country Status (3)

Country Link
CN (1) CN102529467A (it)
IT (1) IT1403828B1 (it)
WO (1) WO2012072579A1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2863441A1 (en) * 2013-10-21 2015-04-22 Applied Materials Italia S.R.L. Method for producing a backside contact in a solar cell device and solar cell device
CN106104812A (zh) * 2014-05-14 2016-11-09 应用材料意大利有限公司 太阳能电池装置及制造太阳能电池装置的方法
CN108198903A (zh) * 2017-12-28 2018-06-22 南京日托光伏科技股份有限公司 一种背面镀膜处理的mwt太阳能电池的制备方法
CN113035998A (zh) * 2021-02-08 2021-06-25 江苏日托光伏科技股份有限公司 一种mwt电池正负电极点丝网印刷方式
CN113921622B (zh) * 2021-09-30 2024-04-05 中国科学院苏州纳米技术与纳米仿生研究所 电池片基板、光伏电池、光伏电池组件及其组装方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
EP0881694A1 (en) 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
NL1010635C2 (nl) * 1998-11-23 2000-05-24 Stichting Energie Werkwijze voor het vervaardigen van een metallisatiepatroon op een fotovoltaïsche cel.
JP4235326B2 (ja) * 1999-11-25 2009-03-11 リコーマイクロエレクトロニクス株式会社 印刷方法及び印刷装置
JP2004155185A (ja) * 2002-10-18 2004-06-03 Ngk Spark Plug Co Ltd はんだペースト印刷方法、はんだペースト印刷装置、はんだ印刷層を有する配線基板の製造方法
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
JP2006224370A (ja) * 2005-02-16 2006-08-31 Sharp Corp スクリーン印刷方法およびその方法を用いて製造された太陽電池
WO2006129817A1 (en) * 2005-05-31 2006-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and manufacturing method of antenna
US7851696B2 (en) * 2006-12-08 2010-12-14 Q-Cells Se Solar cell
JP5111063B2 (ja) * 2007-11-12 2012-12-26 シャープ株式会社 光電変換素子及びその製造方法
NL2001015C2 (nl) * 2007-11-19 2009-05-20 Energieonderzoek Ct Nederland Werkwijze voor het fabriceren van een achterzijde-gecontacteerde fotovoltaïsche cel, en achterzijde-gecontacteerde fotovoltaïsche cel die is gemaakt door een dergelijke werkwijze.
EP2068369A1 (en) 2007-12-03 2009-06-10 Interuniversitair Microelektronica Centrum (IMEC) Photovoltaic cells having metal wrap through and improved passivation
JP2009158575A (ja) * 2007-12-25 2009-07-16 Sharp Corp 光電変換装置および光電変換装置の製造方法
NL2003482C2 (nl) * 2009-09-14 2011-03-15 Stichting Energie Zonnecel en samenstel van een aantal zonnecellen.

Also Published As

Publication number Publication date
WO2012072579A1 (en) 2012-06-07
CN102529467A (zh) 2012-07-04
ITUD20100223A1 (it) 2012-06-03

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