FR2867307B1 - Traitement thermique apres detachement smart-cut - Google Patents

Traitement thermique apres detachement smart-cut

Info

Publication number
FR2867307B1
FR2867307B1 FR0402340A FR0402340A FR2867307B1 FR 2867307 B1 FR2867307 B1 FR 2867307B1 FR 0402340 A FR0402340 A FR 0402340A FR 0402340 A FR0402340 A FR 0402340A FR 2867307 B1 FR2867307 B1 FR 2867307B1
Authority
FR
France
Prior art keywords
detachment
smart
cut
heat treatment
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0402340A
Other languages
English (en)
Other versions
FR2867307A1 (fr
Inventor
Nicolas Daval
Takeshi Akatsu
Nguyet Phuong Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0402340A priority Critical patent/FR2867307B1/fr
Priority to FR0409980A priority patent/FR2867310B1/fr
Priority to US11/059,122 priority patent/US7276428B2/en
Priority to US11/058,992 priority patent/US7285495B2/en
Priority to EP05737041A priority patent/EP1726039A1/fr
Priority to JP2007501319A priority patent/JP4876067B2/ja
Priority to PCT/FR2005/000543 priority patent/WO2005086228A1/fr
Priority to PCT/FR2005/000541 priority patent/WO2005086226A1/fr
Priority to JP2007501318A priority patent/JP2007526644A/ja
Priority to CN200580014164A priority patent/CN100592493C/zh
Priority to EP05737045A priority patent/EP1721333A1/fr
Priority to KR1020067020808A priority patent/KR100910687B1/ko
Priority to JP2007501320A priority patent/JP4876068B2/ja
Priority to CNA2005800071260A priority patent/CN1930674A/zh
Priority to CN2005800141634A priority patent/CN1950937B/zh
Priority to PCT/FR2005/000542 priority patent/WO2005086227A1/fr
Priority to EP05737043A priority patent/EP1733423A1/fr
Priority to KR1020067020815A priority patent/KR100860271B1/ko
Priority to US11/179,713 priority patent/US7449394B2/en
Publication of FR2867307A1 publication Critical patent/FR2867307A1/fr
Priority to US11/233,318 priority patent/US20060014363A1/en
Priority to US11/357,883 priority patent/US7282449B2/en
Application granted granted Critical
Publication of FR2867307B1 publication Critical patent/FR2867307B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
FR0402340A 2004-03-05 2004-03-05 Traitement thermique apres detachement smart-cut Expired - Lifetime FR2867307B1 (fr)

Priority Applications (21)

Application Number Priority Date Filing Date Title
FR0402340A FR2867307B1 (fr) 2004-03-05 2004-03-05 Traitement thermique apres detachement smart-cut
FR0409980A FR2867310B1 (fr) 2004-03-05 2004-09-21 Technique d'amelioration de la qualite d'une couche mince prelevee
US11/058,992 US7285495B2 (en) 2004-03-05 2005-02-16 Methods for thermally treating a semiconductor layer
US11/059,122 US7276428B2 (en) 2004-03-05 2005-02-16 Methods for forming a semiconductor structure
PCT/FR2005/000542 WO2005086227A1 (fr) 2004-03-05 2005-03-07 Technique d’amelioration de la qualite d’une couche mince prelevee
PCT/FR2005/000543 WO2005086228A1 (fr) 2004-03-05 2005-03-07 Traitement thermique apres detachement smart-cut
PCT/FR2005/000541 WO2005086226A1 (fr) 2004-03-05 2005-03-07 Traitement thermique d’amelioration de la qualite d’une couche mince prelevee
JP2007501318A JP2007526644A (ja) 2004-03-05 2005-03-07 採取薄膜の品質改善熱処理方法
CN200580014164A CN100592493C (zh) 2004-03-05 2005-03-07 智能剥离分开后的热处理
EP05737045A EP1721333A1 (fr) 2004-03-05 2005-03-07 Technique d'amelioration de la qualite d'une couche mince prelevee
EP05737041A EP1726039A1 (fr) 2004-03-05 2005-03-07 Traitement thermique apres detachement smart-cut
JP2007501320A JP4876068B2 (ja) 2004-03-05 2005-03-07 スマートカット（登録商標）剥離後の熱処理方法
CNA2005800071260A CN1930674A (zh) 2004-03-05 2005-03-07 用于改进所剥离薄层质量的热处理
CN2005800141634A CN1950937B (zh) 2004-03-05 2005-03-07 用于改善剥离薄层的质量的方法
JP2007501319A JP4876067B2 (ja) 2004-03-05 2005-03-07 採取薄膜の品質改善処理方法
EP05737043A EP1733423A1 (fr) 2004-03-05 2005-03-07 TRAITEMENT THERMIQUE D’AMELIORATION DE LA QUALITE D’UNE COUCHE MINCE PRELEVEE
KR1020067020815A KR100860271B1 (ko) 2004-03-05 2005-03-07 분기되는 박층의 품질 향상법
KR1020067020808A KR100910687B1 (ko) 2004-03-05 2005-03-07 스마트 컷 분리 후 열처리
US11/179,713 US7449394B2 (en) 2004-03-05 2005-07-11 Atomic implantation and thermal treatment of a semiconductor layer
US11/233,318 US20060014363A1 (en) 2004-03-05 2005-09-21 Thermal treatment of a semiconductor layer
US11/357,883 US7282449B2 (en) 2004-03-05 2006-02-17 Thermal treatment of a semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0402340A FR2867307B1 (fr) 2004-03-05 2004-03-05 Traitement thermique apres detachement smart-cut

Publications (2)

Publication Number Publication Date
FR2867307A1 FR2867307A1 (fr) 2005-09-09
FR2867307B1 true FR2867307B1 (fr) 2006-05-26

Family

ID=34855097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0402340A Expired - Lifetime FR2867307B1 (fr) 2004-03-05 2004-03-05 Traitement thermique apres detachement smart-cut

Country Status (7)

Country Link
US (1) US7285495B2 (fr)
EP (1) EP1726039A1 (fr)
JP (1) JP4876068B2 (fr)
KR (1) KR100910687B1 (fr)
CN (3) CN100592493C (fr)
FR (1) FR2867307B1 (fr)
WO (1) WO2005086228A1 (fr)

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US6717213B2 (en) * 2001-06-29 2004-04-06 Intel Corporation Creation of high mobility channels in thin-body SOI devices
WO2005013318A2 (fr) * 2003-07-29 2005-02-10 S.O.I.Tec Silicon On Insulator Technologies Procede d’obtention d’une couche mince de qualite accrue par co-implantation et recuit thermique
FR2858462B1 (fr) * 2003-07-29 2005-12-09 Soitec Silicon On Insulator Procede d'obtention d'une couche mince de qualite accrue par co-implantation et recuit thermique
KR100956711B1 (ko) * 2003-12-16 2010-05-06 인터내셔널 비지네스 머신즈 코포레이션 실리콘-온-절연체 웨이퍼의 컨투어화 된 절연체 층 및 이의제조 프로세스
FR2898431B1 (fr) * 2006-03-13 2008-07-25 Soitec Silicon On Insulator Procede de fabrication de film mince
US20070281440A1 (en) * 2006-05-31 2007-12-06 Jeffrey Scott Cites Producing SOI structure using ion shower
FR2914495B1 (fr) 2007-03-29 2009-10-02 Soitec Silicon On Insulator Amelioration de la qualite d'une couche mince par recuit thermique haute temperature.
FR2923079B1 (fr) * 2007-10-26 2017-10-27 S O I Tec Silicon On Insulator Tech Substrats soi avec couche fine isolante enterree
WO2009084311A1 (fr) * 2007-12-27 2009-07-09 Sharp Kabushiki Kaisha Dispositif à semi-conducteur, substrat doté d'une couche mince semi-conductrice monocristalline et leurs procédés de fabrication
JP5303957B2 (ja) * 2008-02-20 2013-10-02 株式会社デンソー グラフェン基板及びその製造方法
US8133800B2 (en) * 2008-08-29 2012-03-13 Silicon Genesis Corporation Free-standing thickness of single crystal material and method having carrier lifetimes
JP5493343B2 (ja) * 2008-12-04 2014-05-14 信越半導体株式会社 貼り合わせウェーハの製造方法
US20110207306A1 (en) * 2010-02-22 2011-08-25 Sarko Cherekdjian Semiconductor structure made using improved ion implantation process
US8008175B1 (en) 2010-11-19 2011-08-30 Coring Incorporated Semiconductor structure made using improved simultaneous multiple ion implantation process
US8558195B2 (en) 2010-11-19 2013-10-15 Corning Incorporated Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process
US8196546B1 (en) 2010-11-19 2012-06-12 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process
CN102184882A (zh) * 2011-04-07 2011-09-14 中国科学院微电子研究所 一种形成复合功能材料结构的方法
FR2978604B1 (fr) * 2011-07-28 2018-09-14 Soitec Procede de guerison de defauts dans une couche semi-conductrice
FR2980916B1 (fr) * 2011-10-03 2014-03-28 Soitec Silicon On Insulator Procede de fabrication d'une structure de type silicium sur isolant
FR2982071B1 (fr) * 2011-10-27 2014-05-16 Commissariat Energie Atomique Procede de lissage d'une surface par traitement thermique
CN103165511B (zh) * 2011-12-14 2015-07-22 中国科学院上海微系统与信息技术研究所 一种制备goi的方法
CN103165512A (zh) * 2011-12-14 2013-06-19 中国科学院上海微系统与信息技术研究所 一种超薄绝缘体上半导体材料及其制备方法
CN105140171B (zh) * 2015-08-26 2018-06-29 中国科学院上海微系统与信息技术研究所 一种绝缘体上材料的制备方法
CN105957831A (zh) * 2016-07-06 2016-09-21 中国科学院上海微系统与信息技术研究所 一种用于制造支撑衬底上的单晶材料薄层结构的方法
CN107195534B (zh) * 2017-05-24 2021-04-13 中国科学院上海微系统与信息技术研究所 Ge复合衬底、衬底外延结构及其制备方法
CN109427538B (zh) * 2017-08-24 2021-04-02 中国科学院上海微系统与信息技术研究所 一种异质结构的制备方法
CN112204710B (zh) * 2018-12-28 2024-07-09 富士电机株式会社 半导体装置及制造方法
CN111722321A (zh) * 2020-01-19 2020-09-29 中国科学院上海微系统与信息技术研究所 一种光膜转换器及其制备方法
FR3108440A1 (fr) * 2020-03-23 2021-09-24 Soitec Procédé de préparation d’une couche mince
CN111834520B (zh) * 2020-06-29 2021-08-27 中国科学院上海微系统与信息技术研究所 一种表面均匀性优化的压电单晶薄膜制备方法

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Also Published As

Publication number Publication date
JP4876068B2 (ja) 2012-02-15
FR2867307A1 (fr) 2005-09-09
CN1950938A (zh) 2007-04-18
CN1930674A (zh) 2007-03-14
CN100592493C (zh) 2010-02-24
EP1726039A1 (fr) 2006-11-29
KR20070088279A (ko) 2007-08-29
KR100910687B1 (ko) 2009-08-04
US20050196936A1 (en) 2005-09-08
CN1950937B (zh) 2010-06-16
CN1950937A (zh) 2007-04-18
US7285495B2 (en) 2007-10-23
JP2007526646A (ja) 2007-09-13
WO2005086228A1 (fr) 2005-09-15

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