FR2914495B1 - Amelioration de la qualite d'une couche mince par recuit thermique haute temperature. - Google Patents

Amelioration de la qualite d'une couche mince par recuit thermique haute temperature.

Info

Publication number
FR2914495B1
FR2914495B1 FR0754131A FR0754131A FR2914495B1 FR 2914495 B1 FR2914495 B1 FR 2914495B1 FR 0754131 A FR0754131 A FR 0754131A FR 0754131 A FR0754131 A FR 0754131A FR 2914495 B1 FR2914495 B1 FR 2914495B1
Authority
FR
France
Prior art keywords
improving
quality
thin film
high temperature
recover high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0754131A
Other languages
English (en)
Other versions
FR2914495A1 (fr
Inventor
Konstantin Bourdelle
Nguyet Phuong Nguyen
Walter Schwarzenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0754131A priority Critical patent/FR2914495B1/fr
Priority to US11/873,299 priority patent/US7871900B2/en
Priority to KR1020097017835A priority patent/KR101423078B1/ko
Priority to EP08719378A priority patent/EP2130217B1/fr
Priority to CN2008800096825A priority patent/CN101641775B/zh
Priority to JP2010500380A priority patent/JP5354303B2/ja
Priority to PCT/IB2008/000736 priority patent/WO2008120074A1/fr
Publication of FR2914495A1 publication Critical patent/FR2914495A1/fr
Application granted granted Critical
Publication of FR2914495B1 publication Critical patent/FR2914495B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR0754131A 2007-03-29 2007-03-29 Amelioration de la qualite d'une couche mince par recuit thermique haute temperature. Active FR2914495B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0754131A FR2914495B1 (fr) 2007-03-29 2007-03-29 Amelioration de la qualite d'une couche mince par recuit thermique haute temperature.
US11/873,299 US7871900B2 (en) 2007-03-29 2007-10-16 Quality of a thin layer through high-temperature thermal annealing
EP08719378A EP2130217B1 (fr) 2007-03-29 2008-03-14 Amélioration de la qualité d'une couche mince par un recuit thermique haute température
CN2008800096825A CN101641775B (zh) 2007-03-29 2008-03-14 通过高温热退火改善薄层品质
KR1020097017835A KR101423078B1 (ko) 2007-03-29 2008-03-14 고온 열적 어닐링을 통한 박막 품질 개선방법
JP2010500380A JP5354303B2 (ja) 2007-03-29 2008-03-14 高温熱アニールによる薄層の質の向上
PCT/IB2008/000736 WO2008120074A1 (fr) 2007-03-29 2008-03-14 Amélioration de la qualité d'une couche mince par un recuit thermique haute température

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0754131A FR2914495B1 (fr) 2007-03-29 2007-03-29 Amelioration de la qualite d'une couche mince par recuit thermique haute temperature.

Publications (2)

Publication Number Publication Date
FR2914495A1 FR2914495A1 (fr) 2008-10-03
FR2914495B1 true FR2914495B1 (fr) 2009-10-02

Family

ID=38442599

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0754131A Active FR2914495B1 (fr) 2007-03-29 2007-03-29 Amelioration de la qualite d'une couche mince par recuit thermique haute temperature.

Country Status (7)

Country Link
US (1) US7871900B2 (fr)
EP (1) EP2130217B1 (fr)
JP (1) JP5354303B2 (fr)
KR (1) KR101423078B1 (fr)
CN (1) CN101641775B (fr)
FR (1) FR2914495B1 (fr)
WO (1) WO2008120074A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5493343B2 (ja) * 2008-12-04 2014-05-14 信越半導体株式会社 貼り合わせウェーハの製造方法
FR2968121B1 (fr) 2010-11-30 2012-12-21 Soitec Silicon On Insulator Procede de transfert d'une couche a haute temperature

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3412449B2 (ja) * 1997-05-29 2003-06-03 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
CN1118087C (zh) * 1999-09-27 2003-08-13 中国科学院半导体研究所 一种制备半导体衬底的方法
WO2002084725A1 (fr) * 2001-04-17 2002-10-24 California Institute Of Technology Procede utilisant un transfert de la couche au germanium au si pour applications photovoltaiques, et heterostructures realisees par ce procede
JP2003347176A (ja) * 2002-03-20 2003-12-05 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法
FR2839385B1 (fr) * 2002-05-02 2004-07-23 Soitec Silicon On Insulator Procede de decollement de couches de materiau
FR2874455B1 (fr) * 2004-08-19 2008-02-08 Soitec Silicon On Insulator Traitement thermique avant collage de deux plaquettes
JP3886959B2 (ja) * 2002-12-10 2007-02-28 エス オー アイ テック シリコン オン インシュレータ テクノロジーズ エス．アー． 材料複合体の製造方法
US20040262686A1 (en) * 2003-06-26 2004-12-30 Mohamad Shaheen Layer transfer technique
FR2858462B1 (fr) * 2003-07-29 2005-12-09 Soitec Silicon On Insulator Procede d'obtention d'une couche mince de qualite accrue par co-implantation et recuit thermique
KR20060030911A (ko) * 2003-07-29 2006-04-11 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 공동-임플란트 및 열적 아닐링에 의한 개선된 품질의 박층제조방법
JP4792694B2 (ja) * 2003-11-13 2011-10-12 セイコーエプソン株式会社 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置、電子機器
FR2867307B1 (fr) 2004-03-05 2006-05-26 Soitec Silicon On Insulator Traitement thermique apres detachement smart-cut
DE102004041378B4 (de) * 2004-08-26 2010-07-08 Siltronic Ag Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
CN101641775A (zh) 2010-02-03
US20080237804A1 (en) 2008-10-02
US7871900B2 (en) 2011-01-18
CN101641775B (zh) 2012-04-04
JP2010522980A (ja) 2010-07-08
KR101423078B1 (ko) 2014-07-25
EP2130217A1 (fr) 2009-12-09
WO2008120074A1 (fr) 2008-10-09
KR20100014859A (ko) 2010-02-11
EP2130217B1 (fr) 2012-09-26
FR2914495A1 (fr) 2008-10-03
JP5354303B2 (ja) 2013-11-27

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