FR3019188B1 - Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation - Google Patents

Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation

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Publication number
FR3019188B1
FR3019188B1 FR1452629A FR1452629A FR3019188B1 FR 3019188 B1 FR3019188 B1 FR 3019188B1 FR 1452629 A FR1452629 A FR 1452629A FR 1452629 A FR1452629 A FR 1452629A FR 3019188 B1 FR3019188 B1 FR 3019188B1
Authority
FR
France
Prior art keywords
germe
nucleation
growing
hollow
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1452629A
Other languages
English (en)
Other versions
FR3019188A1 (fr
Inventor
Berangere Hyot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1452629A priority Critical patent/FR3019188B1/fr
Priority to PCT/EP2015/056011 priority patent/WO2015144602A1/fr
Priority to KR1020167030024A priority patent/KR102386004B1/ko
Priority to CN201580026550.3A priority patent/CN106414817B/zh
Priority to US15/128,815 priority patent/US10781534B2/en
Priority to EP15711194.9A priority patent/EP3122922A1/fr
Publication of FR3019188A1 publication Critical patent/FR3019188A1/fr
Application granted granted Critical
Publication of FR3019188B1 publication Critical patent/FR3019188B1/fr
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1452629A 2014-03-27 2014-03-27 Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation Active FR3019188B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1452629A FR3019188B1 (fr) 2014-03-27 2014-03-27 Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation
PCT/EP2015/056011 WO2015144602A1 (fr) 2014-03-27 2015-03-20 Procédé de croissance d' éléments allongés (nanofils, microfils) parallèles à partir d'un substrat comportant pour chaque élément allongé un germe formé dans un creux d'une couche de nucléation ou d'un plot de nucléation
KR1020167030024A KR102386004B1 (ko) 2014-03-27 2015-03-20 각각의 길쭉한 요소에 대해 결정핵생성 층이나 결정핵생성 패드의 캐비티 내에 형성된 시드를 포함하는 기판으로부터 평행한 길쭉한 요소(나노와이어, 마이크로와이어)를 성장시키기 위한 방법
CN201580026550.3A CN106414817B (zh) 2014-03-27 2015-03-20 生长并行伸长型元件(纳米丝、微丝)的方法
US15/128,815 US10781534B2 (en) 2014-03-27 2015-03-20 Method for growing parallel elongate elements (nanowires, microwires) from a substrate comprising, for each elongate element, a seed formed in a cavity of a nucleation layer or a nucleation pad
EP15711194.9A EP3122922A1 (fr) 2014-03-27 2015-03-20 Procédé de croissance d' éléments allongés (nanofils, microfils) parallèles à partir d'un substrat comportant pour chaque élément allongé un germe formé dans un creux d'une couche de nucléation ou d'un plot de nucléation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1452629A FR3019188B1 (fr) 2014-03-27 2014-03-27 Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation

Publications (2)

Publication Number Publication Date
FR3019188A1 FR3019188A1 (fr) 2015-10-02
FR3019188B1 true FR3019188B1 (fr) 2017-11-24

Family

ID=50976881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1452629A Active FR3019188B1 (fr) 2014-03-27 2014-03-27 Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation

Country Status (6)

Country Link
US (1) US10781534B2 (fr)
EP (1) EP3122922A1 (fr)
KR (1) KR102386004B1 (fr)
CN (1) CN106414817B (fr)
FR (1) FR3019188B1 (fr)
WO (1) WO2015144602A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
US11967350B1 (en) * 2022-01-31 2024-04-23 Ceremorphic,inc. System and method for current controlled nanowire memory device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP2005101475A (ja) * 2003-08-28 2005-04-14 Hitachi Cable Ltd Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法
TWI500072B (zh) 2004-08-31 2015-09-11 Sophia School Corp 發光元件之製造方法
GB2436398B (en) 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
GB0701069D0 (en) * 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
WO2008105535A1 (fr) * 2007-03-01 2008-09-04 Nec Corporation Dispositif semi-conducteur et son procédé de fabrication
US8896100B2 (en) 2007-09-03 2014-11-25 Sophia School Corporation III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
US20090315120A1 (en) * 2008-06-24 2009-12-24 Lucian Shifren Raised facet- and non-facet 3d source/drain contacts in mosfets
US8349715B2 (en) * 2010-01-29 2013-01-08 International Business Machines Corporation Nanoscale chemical templating with oxygen reactive materials
US9385095B2 (en) * 2010-02-26 2016-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. 3D semiconductor package interposer with die cavity
TWI534431B (zh) * 2010-04-28 2016-05-21 加州太平洋生物科學公司 形成具有官能性島狀區之奈米級孔洞的方法
EP2562135A1 (fr) * 2011-08-22 2013-02-27 ETH Zurich Procédé de fabrication et d'alignement de nanofils et applications d'un tel procédé
CN104205294B (zh) * 2012-02-14 2017-05-10 六边钻公司 基于氮化镓纳米线的电子器件
US9773724B2 (en) * 2013-01-29 2017-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and semiconductor device packages
JP6227128B2 (ja) * 2013-06-07 2017-11-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
US9455211B2 (en) * 2013-09-11 2016-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out structure with openings in buffer layer
US9384879B2 (en) * 2014-01-15 2016-07-05 International Business Machines Corporation Magnetic multilayer structure
US9640422B2 (en) * 2014-01-23 2017-05-02 Intel Corporation III-N devices in Si trenches

Also Published As

Publication number Publication date
KR20160138520A (ko) 2016-12-05
US20170101723A1 (en) 2017-04-13
KR102386004B1 (ko) 2022-04-12
US10781534B2 (en) 2020-09-22
FR3019188A1 (fr) 2015-10-02
CN106414817B (zh) 2020-11-03
EP3122922A1 (fr) 2017-02-01
CN106414817A (zh) 2017-02-15
WO2015144602A1 (fr) 2015-10-01

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