FR3032555B1 - Procede de report d'une couche utile - Google Patents

Procede de report d'une couche utile Download PDF

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Publication number
FR3032555B1
FR3032555B1 FR1551046A FR1551046A FR3032555B1 FR 3032555 B1 FR3032555 B1 FR 3032555B1 FR 1551046 A FR1551046 A FR 1551046A FR 1551046 A FR1551046 A FR 1551046A FR 3032555 B1 FR3032555 B1 FR 3032555B1
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FR
France
Prior art keywords
deferring
useful layer
useful
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1551046A
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English (en)
Other versions
FR3032555A1 (fr
Inventor
Didier Landru
Oleg Kononchuk
Nadia Ben Mohamed
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1551046A priority Critical patent/FR3032555B1/fr
Priority to JP2016014598A priority patent/JP6606705B2/ja
Priority to CN201610076558.7A priority patent/CN105870048B/zh
Priority to US15/018,465 priority patent/US9922867B2/en
Publication of FR3032555A1 publication Critical patent/FR3032555A1/fr
Application granted granted Critical
Publication of FR3032555B1 publication Critical patent/FR3032555B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1551046A 2015-02-10 2015-02-10 Procede de report d'une couche utile Active FR3032555B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1551046A FR3032555B1 (fr) 2015-02-10 2015-02-10 Procede de report d'une couche utile
JP2016014598A JP6606705B2 (ja) 2015-02-10 2016-01-28 有用層を移動する方法
CN201610076558.7A CN105870048B (zh) 2015-02-10 2016-02-03 用于转移有用层的方法
US15/018,465 US9922867B2 (en) 2015-02-10 2016-02-08 Method for transferring a useful layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1551046 2015-02-10
FR1551046A FR3032555B1 (fr) 2015-02-10 2015-02-10 Procede de report d'une couche utile

Publications (2)

Publication Number Publication Date
FR3032555A1 FR3032555A1 (fr) 2016-08-12
FR3032555B1 true FR3032555B1 (fr) 2018-01-19

Family

ID=52737357

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1551046A Active FR3032555B1 (fr) 2015-02-10 2015-02-10 Procede de report d'une couche utile

Country Status (4)

Country Link
US (1) US9922867B2 (fr)
JP (1) JP6606705B2 (fr)
CN (1) CN105870048B (fr)
FR (1) FR3032555B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3061988B1 (fr) * 2017-01-13 2019-11-01 Soitec Procede de lissage de surface d'un substrat semiconducteur sur isolant
FR3063176A1 (fr) * 2017-02-17 2018-08-24 Soitec Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique
FR3074958B1 (fr) * 2017-12-08 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage par adhesion directe
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
FR3091620B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture
FR3113772B1 (fr) * 2020-08-25 2024-05-03 Commissariat Energie Atomique Procédé de transfert d’une couche mince sur un substrat receveur comportant des cavités et une région dépourvue de cavités en bordure d’une face de collage
FR3126809A1 (fr) * 2021-09-06 2023-03-10 Soitec Procede de transfert d’une couche utile sur une face avant d’un substrat support
FR3135820B1 (fr) * 2022-05-18 2024-04-26 Commissariat Energie Atomique Procédé de transfert d'une couche depuis un substrat source vers un substrat destination

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001525991A (ja) * 1997-05-12 2001-12-11 シリコン・ジェネシス・コーポレーション 制御された劈開プロセス
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
US7176108B2 (en) * 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
JP3886959B2 (ja) * 2002-12-10 2007-02-28 エス オー アイ テック シリコン オン インシュレータ テクノロジーズ エス．アー． 材料複合体の製造方法
EP1429381B1 (fr) * 2002-12-10 2011-07-06 S.O.I.Tec Silicon on Insulator Technologies Procédé de fabrication d'un matériau composé
JPWO2005006420A1 (ja) * 2003-07-15 2006-09-28 財団法人神奈川科学技術アカデミー 窒化物半導体素子並びにその作製方法
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US20060027459A1 (en) * 2004-05-28 2006-02-09 Lake Shore Cryotronics, Inc. Mesoporous silicon infrared filters and methods of making same
US9362439B2 (en) * 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
JP5271279B2 (ja) * 2007-02-08 2013-08-21 ソイテック 高熱消散基板を製造する方法
JP5096556B2 (ja) * 2007-04-17 2012-12-12 アイメック 基板の薄層化方法
JP5245380B2 (ja) * 2007-06-21 2013-07-24 信越半導体株式会社 Ｓｏｉウェーハの製造方法
FR2920912B1 (fr) * 2007-09-12 2010-08-27 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure par transfert de couche
FR2926674B1 (fr) * 2008-01-21 2010-03-26 Soitec Silicon On Insulator Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable
FR2987166B1 (fr) * 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche

Also Published As

Publication number Publication date
US9922867B2 (en) 2018-03-20
JP6606705B2 (ja) 2019-11-20
US20160233125A1 (en) 2016-08-11
CN105870048B (zh) 2020-09-04
FR3032555A1 (fr) 2016-08-12
JP2016149538A (ja) 2016-08-18
CN105870048A (zh) 2016-08-17

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