FR2920912B1 - Procede de fabrication d'une structure par transfert de couche - Google Patents

Procede de fabrication d'une structure par transfert de couche

Info

Publication number
FR2920912B1
FR2920912B1 FR0757511A FR0757511A FR2920912B1 FR 2920912 B1 FR2920912 B1 FR 2920912B1 FR 0757511 A FR0757511 A FR 0757511A FR 0757511 A FR0757511 A FR 0757511A FR 2920912 B1 FR2920912 B1 FR 2920912B1
Authority
FR
France
Prior art keywords
substrate
donor substrate
recipient
manufacturing
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0757511A
Other languages
English (en)
Other versions
FR2920912A1 (fr
Inventor
Bouchet Brigitte Soulier
Sebastien Kerdiles
Walter Schwarzenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0757511A priority Critical patent/FR2920912B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to PCT/EP2008/062018 priority patent/WO2009034113A1/fr
Priority to EP08803985A priority patent/EP2195836A1/fr
Priority to CN2008801062027A priority patent/CN101803002B/zh
Priority to KR1020107007669A priority patent/KR101172585B1/ko
Priority to JP2010524479A priority patent/JP5231555B2/ja
Priority to US12/675,927 priority patent/US8420500B2/en
Publication of FR2920912A1 publication Critical patent/FR2920912A1/fr
Application granted granted Critical
Publication of FR2920912B1 publication Critical patent/FR2920912B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'une structure semiconductrice par transfert d'une couche (32) d'un substrat donneur (30) vers un substrat receveur (10), comprenant les étapes de :(a) création d'une zone de fragilisation (31) dans le substrat donneur (30) de manière à définir la couche (32),(b) traitement de la surface du substrat donneur (30) et/ou du substrat receveur (10), de manière à augmenter l'énergie de collage entre les deux substrats(c) collage par adhésion moléculaire du substrat donneur (30) sur le substrat receveur (10)(d) détachement du substrat donneur (30) selon la zone de fragilisation (31).Ce procédé est remarquable en ce que lors de l'étape (b), on contrôle le traitement de la surface du substrat de telle sorte que l'augmentation de l'énergie de collage entre le substrat donneur et le substrat receveur est, dans une région périphérique de ces substrats, inférieure à l'augmentation de l'énergie de collage dans la région centrale desdits substrats.
FR0757511A 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche Active FR2920912B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche
EP08803985A EP2195836A1 (fr) 2007-09-12 2008-09-11 Procédé de production de structure par transfert de couche
CN2008801062027A CN101803002B (zh) 2007-09-12 2008-09-11 通过层转移制造结构的方法
KR1020107007669A KR101172585B1 (ko) 2007-09-12 2008-09-11 층 전사에 의한 구조체 제조 방법
PCT/EP2008/062018 WO2009034113A1 (fr) 2007-09-12 2008-09-11 Procédé de production de structure par transfert de couche
JP2010524479A JP5231555B2 (ja) 2007-09-12 2008-09-11 層転写により構造を製造する方法
US12/675,927 US8420500B2 (en) 2007-09-12 2008-09-11 Method of producing a structure by layer transfer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0757511A FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche

Publications (2)

Publication Number Publication Date
FR2920912A1 FR2920912A1 (fr) 2009-03-13
FR2920912B1 true FR2920912B1 (fr) 2010-08-27

Family

ID=39092009

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0757511A Active FR2920912B1 (fr) 2007-09-12 2007-09-12 Procede de fabrication d'une structure par transfert de couche

Country Status (7)

Country Link
US (1) US8420500B2 (fr)
EP (1) EP2195836A1 (fr)
JP (1) JP5231555B2 (fr)
KR (1) KR101172585B1 (fr)
CN (1) CN101803002B (fr)
FR (1) FR2920912B1 (fr)
WO (1) WO2009034113A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
JP5859742B2 (ja) * 2011-04-28 2016-02-16 京セラ株式会社 複合基板
JP5976999B2 (ja) * 2011-05-30 2016-08-24 京セラ株式会社 複合基板
US8709914B2 (en) * 2011-06-14 2014-04-29 International Business Machines Corporation Method for controlled layer transfer
FR3032555B1 (fr) * 2015-02-10 2018-01-19 Soitec Procede de report d'une couche utile
FR3048548B1 (fr) 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US10504716B2 (en) * 2018-03-15 2019-12-10 Taiwan Semiconductor Manufacturing Company Ltd. Method for manufacturing semiconductor device and manufacturing method of the same
JP6705472B2 (ja) 2018-06-18 2020-06-03 Tdk株式会社 非可逆回路素子及びこれを用いた通信装置
CN110183221B (zh) * 2019-05-05 2021-11-30 南京中电熊猫磁电科技有限公司 超低温度磁导率稳定性的锰锌软磁铁氧体材料的制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2058132T3 (es) * 1986-12-19 1994-11-01 Applied Materials Inc Reactor para ataque en plasma intensificado por un campo magnetico.
US5298465A (en) * 1990-08-16 1994-03-29 Applied Materials, Inc. Plasma etching system
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP3294934B2 (ja) 1994-03-11 2002-06-24 キヤノン株式会社 半導体基板の作製方法及び半導体基板
FR2842649B1 (fr) * 2002-07-17 2005-06-24 Soitec Silicon On Insulator Procede d'augmentation de l'aire d'une couche utile de materiau reportee sur un support
JP3996557B2 (ja) * 2003-07-09 2007-10-24 直江津電子工業株式会社 半導体接合ウエーハの製造方法
JP2005347302A (ja) * 2004-05-31 2005-12-15 Canon Inc 基板の製造方法
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
KR100553713B1 (ko) * 2004-06-03 2006-02-24 삼성전자주식회사 플라즈마 식각 장치 및 이 장치를 이용한 포토 마스크의제조 방법
JP4520820B2 (ja) * 2004-10-27 2010-08-11 株式会社日立ハイテクノロジーズ 試料処理装置及び試料処理システム
US7919391B2 (en) * 2004-12-24 2011-04-05 S.O.I.Tec Silicon On Insulator Technologies Methods for preparing a bonding surface of a semiconductor wafer
KR101174871B1 (ko) * 2005-06-18 2012-08-17 삼성디스플레이 주식회사 유기 반도체의 패터닝 방법
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
US7781309B2 (en) * 2005-12-22 2010-08-24 Sumco Corporation Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method
JP2007251080A (ja) * 2006-03-20 2007-09-27 Fujifilm Corp プラスチック基板の固定方法、回路基板およびその製造方法

Also Published As

Publication number Publication date
JP5231555B2 (ja) 2013-07-10
CN101803002B (zh) 2013-01-09
US8420500B2 (en) 2013-04-16
KR101172585B1 (ko) 2012-08-08
CN101803002A (zh) 2010-08-11
FR2920912A1 (fr) 2009-03-13
JP2010539696A (ja) 2010-12-16
WO2009034113A1 (fr) 2009-03-19
EP2195836A1 (fr) 2010-06-16
KR20100068424A (ko) 2010-06-23
US20100304507A1 (en) 2010-12-02

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