FR2997096B1 - Procede de formation d'un lingot en silicium de resistivite uniforme - Google Patents

Procede de formation d'un lingot en silicium de resistivite uniforme

Info

Publication number
FR2997096B1
FR2997096B1 FR1202826A FR1202826A FR2997096B1 FR 2997096 B1 FR2997096 B1 FR 2997096B1 FR 1202826 A FR1202826 A FR 1202826A FR 1202826 A FR1202826 A FR 1202826A FR 2997096 B1 FR2997096 B1 FR 2997096B1
Authority
FR
France
Prior art keywords
forming
silicon ingot
uniform resistivity
resistivity
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1202826A
Other languages
English (en)
Other versions
FR2997096A1 (fr
Inventor
Jordi Veirman
Sebastien Dubois
Nicolas Enjalbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1202826A priority Critical patent/FR2997096B1/fr
Priority to US14/437,955 priority patent/US9938639B2/en
Priority to PCT/FR2013/000276 priority patent/WO2014064347A1/fr
Priority to JP2015538521A priority patent/JP6682269B2/ja
Priority to KR1020157012616A priority patent/KR20150074048A/ko
Priority to EP13795544.9A priority patent/EP2912215A1/fr
Publication of FR2997096A1 publication Critical patent/FR2997096A1/fr
Application granted granted Critical
Publication of FR2997096B1 publication Critical patent/FR2997096B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Electrochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
FR1202826A 2012-10-23 2012-10-23 Procede de formation d'un lingot en silicium de resistivite uniforme Expired - Fee Related FR2997096B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1202826A FR2997096B1 (fr) 2012-10-23 2012-10-23 Procede de formation d'un lingot en silicium de resistivite uniforme
US14/437,955 US9938639B2 (en) 2012-10-23 2013-10-23 Method for forming a doped silicon ingot of uniform resistivity
PCT/FR2013/000276 WO2014064347A1 (fr) 2012-10-23 2013-10-23 Procede de formation d'un lingot en silicium dopé de resistivite uniforme.
JP2015538521A JP6682269B2 (ja) 2012-10-23 2013-10-23 一様な抵抗を有するドーピングされたシリコンインゴットを形成する方法
KR1020157012616A KR20150074048A (ko) 2012-10-23 2013-10-23 균일한 비저항의 도핑된 실리콘 잉곳을 형성하는 방법
EP13795544.9A EP2912215A1 (fr) 2012-10-23 2013-10-23 Procede de formation d'un lingot en silicium dopé de resistivite uniforme.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1202826A FR2997096B1 (fr) 2012-10-23 2012-10-23 Procede de formation d'un lingot en silicium de resistivite uniforme

Publications (2)

Publication Number Publication Date
FR2997096A1 FR2997096A1 (fr) 2014-04-25
FR2997096B1 true FR2997096B1 (fr) 2014-11-28

Family

ID=47429858

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1202826A Expired - Fee Related FR2997096B1 (fr) 2012-10-23 2012-10-23 Procede de formation d'un lingot en silicium de resistivite uniforme

Country Status (6)

Country Link
US (1) US9938639B2 (fr)
EP (1) EP2912215A1 (fr)
JP (1) JP6682269B2 (fr)
KR (1) KR20150074048A (fr)
FR (1) FR2997096B1 (fr)
WO (1) WO2014064347A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6187689B2 (ja) * 2014-06-02 2017-08-30 株式会社Sumco シリコンウェーハの製造方法
FR3028266B1 (fr) 2014-11-10 2016-12-23 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium monocristallin de type n a concentration en donneurs thermiques a base d'oxygene controlee
FR3045831B1 (fr) 2015-12-21 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'etalonnage d'un four de recuit utilise pour former des donneurs thermiques
JP6569613B2 (ja) * 2016-07-11 2019-09-04 株式会社Sumco シリコンウェーハの評価方法及び製造方法
FR3055563B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique
FR3059821B1 (fr) * 2016-12-05 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure de temperature
JP6669133B2 (ja) * 2017-06-23 2020-03-18 株式会社Sumco シリコンウェーハのサーマルドナー生成挙動予測方法、シリコンウェーハの評価方法およびシリコンウェーハの製造方法
JP6878188B2 (ja) * 2017-07-26 2021-05-26 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの抵抗率測定方法
US11739437B2 (en) * 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
AU2020328504A1 (en) 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Producing a ribbon or wafer with regions of low oxygen concentration

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1003510A (fr) 1947-01-15 1952-03-19 E Dervaux Ets Procédé de fabrication de soupapes pour moteurs à combustion interne
JPS58140132A (ja) * 1982-02-16 1983-08-19 Toshiba Corp Ｃｚ高抵抗ウエハの製造方法
JPH0810695B2 (ja) * 1986-10-02 1996-01-31 ソニー株式会社 半導体基板の製法
JPH085737B2 (ja) * 1990-10-17 1996-01-24 コマツ電子金属株式会社 半導体単結晶製造装置
DE4108394C2 (de) * 1991-03-15 1994-09-08 Komatsu Denshi Kinzoku Kk Verfahren zum Herstellen eines Siliziumsubstrats für eine Halbleitereinrichtung
JPH04298042A (ja) * 1991-03-27 1992-10-21 Komatsu Electron Metals Co Ltd 半導体の熱処理方法
JP2978607B2 (ja) * 1991-09-17 1999-11-15 新日本製鐵株式会社 シリコン単結晶の製造方法
JPH08133885A (ja) * 1994-11-11 1996-05-28 Komatsu Electron Metals Co Ltd 連続チャージ法による半導体単結晶の製造方法
JPH10167892A (ja) * 1996-12-13 1998-06-23 Komatsu Electron Metals Co Ltd シリコン単結晶の引き上げ方法
KR20000021737A (ko) 1998-09-30 2000-04-25 김영환 반도체웨이퍼 제조용 스테이지
WO2000055397A1 (fr) * 1999-03-16 2000-09-21 Shin-Etsu Handotai Co., Ltd. Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue
KR100525463B1 (ko) 2003-08-25 2005-11-04 재단법인서울대학교산학협력재단 중성자 변환 도핑에서의 레디얼 방향의 중성자속 균일화방법
TWI290182B (en) * 2004-01-27 2007-11-21 Sumco Techxiv Corp Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal
KR101045309B1 (ko) * 2004-02-03 2011-06-29 신에쯔 한도타이 가부시키가이샤 반도체 웨이퍼의 제조 방법 및 반도체 잉곳의 절단 위치결정 시스템
CN101228301A (zh) * 2005-05-19 2008-07-23 Memc电子材料有限公司 高电阻率硅结构和用于制备该结构的方法
US20070056504A1 (en) 2005-09-12 2007-03-15 Rexor Corporation Method and apparatus to produce single crystal ingot of uniform axial resistivity
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
US8779462B2 (en) * 2008-05-19 2014-07-15 Infineon Technologies Ag High-ohmic semiconductor substrate and a method of manufacturing the same
JP2010062466A (ja) * 2008-09-05 2010-03-18 Sumco Corp 垂直シリコンデバイス用シリコンウェーハ及びその製造方法、シリコン単結晶、並びに、垂直シリコンデバイス
FR2964459B1 (fr) 2010-09-02 2012-09-28 Commissariat Energie Atomique Procede de cartographie de la concentration en oxygene
FR2974180B1 (fr) * 2011-04-15 2013-04-26 Commissariat Energie Atomique Procede de determination de la concentration en oxygene interstitiel.
JP5772553B2 (ja) * 2011-12-06 2015-09-02 信越半導体株式会社 シリコン単結晶の評価方法およびシリコン単結晶の製造方法
FR3009380B1 (fr) * 2013-08-02 2015-07-31 Commissariat Energie Atomique Procede de localisation d'une plaquette dans son lingot

Also Published As

Publication number Publication date
JP6682269B2 (ja) 2020-04-15
US20150284875A1 (en) 2015-10-08
EP2912215A1 (fr) 2015-09-02
KR20150074048A (ko) 2015-07-01
WO2014064347A1 (fr) 2014-05-01
FR2997096A1 (fr) 2014-04-25
US9938639B2 (en) 2018-04-10
JP2016500641A (ja) 2016-01-14

Similar Documents

Publication Publication Date Title
FR2997096B1 (fr) Procede de formation d'un lingot en silicium de resistivite uniforme
FR2991320B1 (fr) Procede de preparation d'amines methylees
FR2980916B1 (fr) Procede de fabrication d'une structure de type silicium sur isolant
HUE057562T2 (hu) Szilícium nanoszálak elõállítására szolgáló eljárás
ZA201505891B (en) Process for production of hexamethylenediamine from 5 hydroxymethylfurfural
GB2504593B (en) Method of forming silicon
FR3005967B1 (fr) Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques
FR2975396B1 (fr) Procede de preparation de 5-hydroxymethylfurfural
EP2667403A4 (fr) Processus de fabrication d'un dispositif semiconducteur au carbure de silicium
FR2993882B1 (fr) Procede de preparation d'alkoxyhydroxybenzaldehyde sensiblement exempte d'alkyl-alkoxyhydroxybenzaldehyde
GB201120696D0 (en) Production of mono-cystalline silicon
FR2980491B1 (fr) Procede de traitement de surface d'un document de securite
IL223230B (en) Continuous process for the alkylation of cyclic tertiary amines
FR3003686B1 (fr) Procede de formation d'une couche de silicium contraint
FR2980795B1 (fr) Procede de preparation de galactomannanes cationiques
FR2957717B1 (fr) Procede de formation d'une structure de type metal-isolant-metal tridimensionnelle
FR2985992B1 (fr) Nouveau procede de preparation de silices precitees
FR2993808B1 (fr) Procede pour la pre-texturation d'une couche de polissage mecano-chimique
FR2977585B1 (fr) Procede de preparation d'esters
FR2983847B1 (fr) Procede de preparation de graphene
FR2977578B1 (fr) Procede de fabrication de carbure de silicium
FR2995913B1 (fr) Procede de formation d'une couche de silicium epitaxiee.
IL228900A0 (en) A process for the preparation of hexamethylenediamine
FR3011542B1 (fr) Procede pour la desoxydation du silicium
FR3011379B1 (fr) Procede de preparation d'un substrat de silicium recristallise a gros cristallites

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

ST Notification of lapse

Effective date: 20220605