FR2997096B1 - Procede de formation d'un lingot en silicium de resistivite uniforme - Google Patents
Procede de formation d'un lingot en silicium de resistivite uniformeInfo
- Publication number
- FR2997096B1 FR2997096B1 FR1202826A FR1202826A FR2997096B1 FR 2997096 B1 FR2997096 B1 FR 2997096B1 FR 1202826 A FR1202826 A FR 1202826A FR 1202826 A FR1202826 A FR 1202826A FR 2997096 B1 FR2997096 B1 FR 2997096B1
- Authority
- FR
- France
- Prior art keywords
- forming
- silicon ingot
- uniform resistivity
- resistivity
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D21/00—Arrangements of monitoring devices; Arrangements of safety devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Electrochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mining & Mineral Resources (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1202826A FR2997096B1 (fr) | 2012-10-23 | 2012-10-23 | Procede de formation d'un lingot en silicium de resistivite uniforme |
US14/437,955 US9938639B2 (en) | 2012-10-23 | 2013-10-23 | Method for forming a doped silicon ingot of uniform resistivity |
KR1020157012616A KR20150074048A (ko) | 2012-10-23 | 2013-10-23 | 균일한 비저항의 도핑된 실리콘 잉곳을 형성하는 방법 |
EP13795544.9A EP2912215A1 (fr) | 2012-10-23 | 2013-10-23 | Procede de formation d'un lingot en silicium dopé de resistivite uniforme. |
JP2015538521A JP6682269B2 (ja) | 2012-10-23 | 2013-10-23 | 一様な抵抗を有するドーピングされたシリコンインゴットを形成する方法 |
PCT/FR2013/000276 WO2014064347A1 (fr) | 2012-10-23 | 2013-10-23 | Procede de formation d'un lingot en silicium dopé de resistivite uniforme. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1202826A FR2997096B1 (fr) | 2012-10-23 | 2012-10-23 | Procede de formation d'un lingot en silicium de resistivite uniforme |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2997096A1 FR2997096A1 (fr) | 2014-04-25 |
FR2997096B1 true FR2997096B1 (fr) | 2014-11-28 |
Family
ID=47429858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1202826A Expired - Fee Related FR2997096B1 (fr) | 2012-10-23 | 2012-10-23 | Procede de formation d'un lingot en silicium de resistivite uniforme |
Country Status (6)
Country | Link |
---|---|
US (1) | US9938639B2 (fr) |
EP (1) | EP2912215A1 (fr) |
JP (1) | JP6682269B2 (fr) |
KR (1) | KR20150074048A (fr) |
FR (1) | FR2997096B1 (fr) |
WO (1) | WO2014064347A1 (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106463403B (zh) * | 2014-06-02 | 2020-05-05 | 胜高股份有限公司 | 硅晶片及其制造方法 |
FR3028266B1 (fr) | 2014-11-10 | 2016-12-23 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium monocristallin de type n a concentration en donneurs thermiques a base d'oxygene controlee |
FR3045831B1 (fr) * | 2015-12-21 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'etalonnage d'un four de recuit utilise pour former des donneurs thermiques |
JP6569613B2 (ja) * | 2016-07-11 | 2019-09-04 | 株式会社Sumco | シリコンウェーハの評価方法及び製造方法 |
FR3055563B1 (fr) * | 2016-09-08 | 2018-09-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique |
FR3059821B1 (fr) * | 2016-12-05 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de mesure de temperature |
JP6669133B2 (ja) | 2017-06-23 | 2020-03-18 | 株式会社Sumco | シリコンウェーハのサーマルドナー生成挙動予測方法、シリコンウェーハの評価方法およびシリコンウェーハの製造方法 |
JP6878188B2 (ja) * | 2017-07-26 | 2021-05-26 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの抵抗率測定方法 |
US11739437B2 (en) * | 2018-12-27 | 2023-08-29 | Globalwafers Co., Ltd. | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
US11885036B2 (en) | 2019-08-09 | 2024-01-30 | Leading Edge Equipment Technologies, Inc. | Producing a ribbon or wafer with regions of low oxygen concentration |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1003510A (fr) | 1947-01-15 | 1952-03-19 | E Dervaux Ets | Procédé de fabrication de soupapes pour moteurs à combustion interne |
JPS58140132A (ja) * | 1982-02-16 | 1983-08-19 | Toshiba Corp | Cz高抵抗ウエハの製造方法 |
JPH0810695B2 (ja) * | 1986-10-02 | 1996-01-31 | ソニー株式会社 | 半導体基板の製法 |
JPH085737B2 (ja) * | 1990-10-17 | 1996-01-24 | コマツ電子金属株式会社 | 半導体単結晶製造装置 |
DE4108394C2 (de) * | 1991-03-15 | 1994-09-08 | Komatsu Denshi Kinzoku Kk | Verfahren zum Herstellen eines Siliziumsubstrats für eine Halbleitereinrichtung |
JPH04298042A (ja) * | 1991-03-27 | 1992-10-21 | Komatsu Electron Metals Co Ltd | 半導体の熱処理方法 |
JP2978607B2 (ja) * | 1991-09-17 | 1999-11-15 | 新日本製鐵株式会社 | シリコン単結晶の製造方法 |
JPH08133885A (ja) * | 1994-11-11 | 1996-05-28 | Komatsu Electron Metals Co Ltd | 連続チャージ法による半導体単結晶の製造方法 |
JPH10167892A (ja) * | 1996-12-13 | 1998-06-23 | Komatsu Electron Metals Co Ltd | シリコン単結晶の引き上げ方法 |
KR20000021737A (ko) | 1998-09-30 | 2000-04-25 | 김영환 | 반도체웨이퍼 제조용 스테이지 |
EP1087041B1 (fr) * | 1999-03-16 | 2009-01-07 | Shin-Etsu Handotai Co., Ltd | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
KR100525463B1 (ko) | 2003-08-25 | 2005-11-04 | 재단법인서울대학교산학협력재단 | 중성자 변환 도핑에서의 레디얼 방향의 중성자속 균일화방법 |
TWI290182B (en) * | 2004-01-27 | 2007-11-21 | Sumco Techxiv Corp | Method for predicting precipitation behavior of oxygen in silicon single crystal, determining production parameter thereof, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal |
WO2005076333A1 (fr) * | 2004-02-03 | 2005-08-18 | Shin-Etsu Handotai Co., Ltd. | Procede de fabrication d’une plaquette semi-conductrice et systeme pour determiner la position de decoupe de lingot semi-conducteur |
US7521382B2 (en) * | 2005-05-19 | 2009-04-21 | Memc Electronic Materials, Inc. | High resistivity silicon structure and a process for the preparation thereof |
US20070056504A1 (en) | 2005-09-12 | 2007-03-15 | Rexor Corporation | Method and apparatus to produce single crystal ingot of uniform axial resistivity |
JP4631717B2 (ja) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
US8779462B2 (en) * | 2008-05-19 | 2014-07-15 | Infineon Technologies Ag | High-ohmic semiconductor substrate and a method of manufacturing the same |
JP2010062466A (ja) * | 2008-09-05 | 2010-03-18 | Sumco Corp | 垂直シリコンデバイス用シリコンウェーハ及びその製造方法、シリコン単結晶、並びに、垂直シリコンデバイス |
FR2964459B1 (fr) * | 2010-09-02 | 2012-09-28 | Commissariat Energie Atomique | Procede de cartographie de la concentration en oxygene |
FR2974180B1 (fr) * | 2011-04-15 | 2013-04-26 | Commissariat Energie Atomique | Procede de determination de la concentration en oxygene interstitiel. |
JP5772553B2 (ja) * | 2011-12-06 | 2015-09-02 | 信越半導体株式会社 | シリコン単結晶の評価方法およびシリコン単結晶の製造方法 |
FR3009380B1 (fr) * | 2013-08-02 | 2015-07-31 | Commissariat Energie Atomique | Procede de localisation d'une plaquette dans son lingot |
-
2012
- 2012-10-23 FR FR1202826A patent/FR2997096B1/fr not_active Expired - Fee Related
-
2013
- 2013-10-23 KR KR1020157012616A patent/KR20150074048A/ko not_active Application Discontinuation
- 2013-10-23 JP JP2015538521A patent/JP6682269B2/ja not_active Expired - Fee Related
- 2013-10-23 WO PCT/FR2013/000276 patent/WO2014064347A1/fr active Application Filing
- 2013-10-23 US US14/437,955 patent/US9938639B2/en not_active Expired - Fee Related
- 2013-10-23 EP EP13795544.9A patent/EP2912215A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US9938639B2 (en) | 2018-04-10 |
JP2016500641A (ja) | 2016-01-14 |
US20150284875A1 (en) | 2015-10-08 |
JP6682269B2 (ja) | 2020-04-15 |
KR20150074048A (ko) | 2015-07-01 |
FR2997096A1 (fr) | 2014-04-25 |
EP2912215A1 (fr) | 2015-09-02 |
WO2014064347A1 (fr) | 2014-05-01 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 7 |
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PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 9 |
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ST | Notification of lapse |
Effective date: 20220605 |