FR2980279B1 - Procede de fabrication d'une structure composite a separer par exfoliation - Google Patents

Procede de fabrication d'une structure composite a separer par exfoliation

Info

Publication number
FR2980279B1
FR2980279B1 FR1158330A FR1158330A FR2980279B1 FR 2980279 B1 FR2980279 B1 FR 2980279B1 FR 1158330 A FR1158330 A FR 1158330A FR 1158330 A FR1158330 A FR 1158330A FR 2980279 B1 FR2980279 B1 FR 2980279B1
Authority
FR
France
Prior art keywords
exfoliation
separated
manufacturing
composite structure
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1158330A
Other languages
English (en)
Other versions
FR2980279A1 (fr
Inventor
Christophe Figuet
Christophe Gourdel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1158330A priority Critical patent/FR2980279B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to DE112012003902.5T priority patent/DE112012003902B4/de
Priority to SG11201400695YA priority patent/SG11201400695YA/en
Priority to US14/345,558 priority patent/US9646825B2/en
Priority to PCT/IB2012/001405 priority patent/WO2013041926A1/fr
Priority to CN201280045877.1A priority patent/CN103814436B/zh
Priority to KR1020147008089A priority patent/KR101962312B1/ko
Priority to TW101128670A priority patent/TWI569364B/zh
Publication of FR2980279A1 publication Critical patent/FR2980279A1/fr
Application granted granted Critical
Publication of FR2980279B1 publication Critical patent/FR2980279B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR1158330A 2011-09-20 2011-09-20 Procede de fabrication d'une structure composite a separer par exfoliation Active FR2980279B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1158330A FR2980279B1 (fr) 2011-09-20 2011-09-20 Procede de fabrication d'une structure composite a separer par exfoliation
SG11201400695YA SG11201400695YA (en) 2011-09-20 2012-07-18 Method for fabricating a composite structure to be separated by exfoliation
US14/345,558 US9646825B2 (en) 2011-09-20 2012-07-18 Method for fabricating a composite structure to be separated by exfoliation
PCT/IB2012/001405 WO2013041926A1 (fr) 2011-09-20 2012-07-18 Procédé pour fabriquer une structure composite destinée à être séparée par exfoliation
DE112012003902.5T DE112012003902B4 (de) 2011-09-20 2012-07-18 Verfahren zur Herstellung einer durch Abblättern abzutrennenden Verbundstruktur, zugehörige Verbundstruktur und Verfahren zum Trennen derselben
CN201280045877.1A CN103814436B (zh) 2011-09-20 2012-07-18 用于制造通过剥离来分离的复合结构的方法
KR1020147008089A KR101962312B1 (ko) 2011-09-20 2012-07-18 박리에 의해 분리될 복합 구조를 제조하기 위한 방법
TW101128670A TWI569364B (zh) 2011-09-20 2012-08-08 以剝落作用分離之複合結構之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158330A FR2980279B1 (fr) 2011-09-20 2011-09-20 Procede de fabrication d'une structure composite a separer par exfoliation

Publications (2)

Publication Number Publication Date
FR2980279A1 FR2980279A1 (fr) 2013-03-22
FR2980279B1 true FR2980279B1 (fr) 2013-10-11

Family

ID=46634471

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158330A Active FR2980279B1 (fr) 2011-09-20 2011-09-20 Procede de fabrication d'une structure composite a separer par exfoliation

Country Status (7)

Country Link
US (1) US9646825B2 (fr)
KR (1) KR101962312B1 (fr)
DE (1) DE112012003902B4 (fr)
FR (1) FR2980279B1 (fr)
SG (1) SG11201400695YA (fr)
TW (1) TWI569364B (fr)
WO (1) WO2013041926A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10005256B2 (en) * 2012-06-14 2018-06-26 The Boeing Company Selectively weakened stretched films
FR2995447B1 (fr) 2012-09-07 2014-09-05 Soitec Silicon On Insulator Procede de separation d'au moins deux substrats selon une interface choisie
FR2995444B1 (fr) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator Procede de detachement d'une couche
FR3036845B1 (fr) 2015-05-28 2017-05-26 Soitec Silicon On Insulator Procede de transfert d'une couche d'un substrat monocristallin
KR102388994B1 (ko) 2016-03-22 2022-04-22 실텍트라 게엠베하 분리될 고형체의 결합된 레이저 처리 방법
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
EP3551373A1 (fr) 2016-12-12 2019-10-16 Siltectra GmbH Procédé d'amincissement de couches de solides pourvues de composants
DE102017205635A1 (de) * 2017-04-03 2018-10-04 3D-Micromac Ag Verfahren und Fertigungssystem zur Herstellung mikroelektronischer Komponenten mit Schichtaufbau
CN110769967A (zh) 2017-04-20 2020-02-07 西尔特克特拉有限责任公司 用于打薄设有部件的固体层的方法
DE102018205529A1 (de) 2018-04-12 2019-10-17 Bundesanstalt für Materialforschung und -Prüfung (BAM) Filtersubstrat zur Filterung und optischen Charakterisierung von Mikropartikeln, Verfahren zur Herstellung des Filtersubstrats und Verwendung des Filtersubstrats

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811191A (en) 1994-12-27 1998-09-22 Ppg Industries, Inc. Multilayer antireflective coating with a graded base layer
EP1758169A3 (fr) * 1996-08-27 2007-05-23 Seiko Epson Corporation Méthode de séparation, procédé de transfert d'un dispositif à film mince, et dispositif d'affichage à cristaux liquides obtenu par application du procédé de transfert
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
US6728456B1 (en) 2002-10-11 2004-04-27 Eastman Kodak Company Waveguide with nanoparticle induced refractive index gradient
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
US7648741B2 (en) * 2005-05-17 2010-01-19 Eastman Kodak Company Forming a patterned metal layer using laser induced thermal transfer method
US8153282B2 (en) 2005-11-22 2012-04-10 Guardian Industries Corp. Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide
US8993410B2 (en) * 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
WO2009120983A2 (fr) 2008-03-27 2009-10-01 Rensselaer Polytechnic Institute Revêtement antireflet omnidirectionnel à large bande à facteur de réflexion ultra-faible
US8916769B2 (en) 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
US20100330731A1 (en) 2009-06-27 2010-12-30 Twin Creeks Technologies, Inc. Method to form a thin semiconductor lamina adhered to a flexible substrate
EP2513964B1 (fr) * 2009-12-15 2014-02-19 Soitec Procédé pour recycler un substrat
KR101063361B1 (ko) * 2010-05-06 2011-09-07 포항공과대학교 산학협력단 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판

Also Published As

Publication number Publication date
SG11201400695YA (en) 2014-04-28
DE112012003902T5 (de) 2014-07-31
WO2013041926A1 (fr) 2013-03-28
US9646825B2 (en) 2017-05-09
FR2980279A1 (fr) 2013-03-22
TWI569364B (zh) 2017-02-01
KR20140063742A (ko) 2014-05-27
US20140339681A1 (en) 2014-11-20
KR101962312B1 (ko) 2019-03-26
DE112012003902B4 (de) 2021-12-23
CN103814436A (zh) 2014-05-21
TW201320240A (zh) 2013-05-16

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