EP2695183A1 - Procédé de liaison permanente de plaquettes de semi-conducteurs - Google Patents

Procédé de liaison permanente de plaquettes de semi-conducteurs

Info

Publication number
EP2695183A1
EP2695183A1 EP11714257.0A EP11714257A EP2695183A1 EP 2695183 A1 EP2695183 A1 EP 2695183A1 EP 11714257 A EP11714257 A EP 11714257A EP 2695183 A1 EP2695183 A1 EP 2695183A1
Authority
EP
European Patent Office
Prior art keywords
reservoir
layer
contact surface
reaction
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11714257.0A
Other languages
German (de)
English (en)
Inventor
Thomas PLACH
Kurt Hingerl
Markus Wimplinger
Christoph FLÖTGEN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EV Group E Thallner GmbH
Original Assignee
EV Group E Thallner GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EV Group E Thallner GmbH filed Critical EV Group E Thallner GmbH
Publication of EP2695183A1 publication Critical patent/EP2695183A1/fr
Withdrawn legal-status Critical Current

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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Definitions

  • the present invention relates to a method for bonding a first contact surface of a first substrate to a second contact surface of a second substrate according to claim 1.
  • the goal of permanent or irreversible bonding of substrates is to create as strong and, in particular, irrevocable connection, ie a high bonding force, between the two contact surfaces of the substrates.
  • irrevocable connection ie a high bonding force
  • the bonding process must therefore be designed in such a way that active elements, such as transistors, which are already present on the structure wafers during the bonding process.
  • the compatibility criteria include above all the purity of certain chemical elements (especially in CMOS structures), mechanical strength, especially by thermal tensions.
  • the reduction of the bending force leads to a gentler handling of the structural wafers, and thus to a reduction in the probability of failure due to direct mechanical bending.
  • Object of the present invention is therefore to provide a method for the careful production of a permanent B onds with the highest possible bond strength at the same time as possible lowest possible temperature.
  • the basic idea of the present invention is to provide a reservoir for receiving a first starting material on at least one of the substrates, which, after the contacting or production of a temporary bond between the substrates, has a second starting material, that in the other
  • Substrate present reacts and thereby forms an irreversible or permanent B ond between the substrates.
  • Contact surface usually finds a cleaning of the substrate or substrates
  • the surface layer consists at least predominantly of a native material, in particular of oxide material, preferably of native silicon dioxide.
  • a layer of native material can be made particularly thin, so that the reactions provided according to the invention (first starting material or first group with the second starting material or the second group), in particular diffusion processes, because of the reduced distances between the
  • a growth layer in which the deformation according to the invention takes place or the first reactant (or the first group) reacts with the present in the reaction layer of the second substrate second reactant (or the second group).
  • the first starting material (or the first group) and the second starting material (or the second group) it is possible to thin the growth layer between the reaction layer of the second substrate and the reservoir before contacting the substrates, as a result, the distance between the reactants is reduced and at the same time the deformation / formation of the invention On a growth layer is favored.
  • the growth layer is at least partially, in particular predominantly, vorzugswei se completely removed by the thinning.
  • the growth layer grows in the reaction of the first reactant with the second reactant, even if it was completely removed.
  • Growth layer may be provided prior to contacting the contact surfaces, in particular by passivation of the reaction layer of the second substrate, preferably by application of N? , Forming gas or an inert atmosphere or under vacuum or by amorphizing.
  • N? Forming gas or an inert atmosphere or under vacuum or by amorphizing.
  • a treatment with plasma which contains forming gas, in particular predominantly of forming gas, has proved particularly suitable.
  • forming gas are gases to understand the
  • the remainder of the mixture consists of an inert gas such as nitrogen or argon.
  • the formation of the reservoir, in particular by plasma activation, according to the invention is chosen so that B lasen Struktur is avoided.
  • ions of gas molecules are used for the plasma activation, which are suitable at the same time for the reaction with the second educt, in particular corresponding to the first educt. This ensures that any by-products which could be formed in the reaction of the first starting material with the second starting material are avoided.
  • the size of the reservoir is set according to the invention so that pores of the substrate at the contact surface between the substrates can be completely closed by means of the growth of the growth layer.
  • the size must be small enough to absorb as little as possible excess first starting material which can not react with the reaction layer. As a result, B lase formation is largely avoided or excluded.
  • an in-situ processing is carried out in order to store a very pure starting material in the reservoir and to exclude non-reactive species as far as possible.
  • the bond strengths are below the permanent bond strengths, at least by a factor of 2 to 3,
  • the pre-B ondGoodn of pure, non-activated, hydrophilic Si il silicon with about 100mJ / m 2 and of pure, plasma-activated hydrophilized silicon with about 200- 300mJ / m mentioned.
  • the prebonds between the substrates wetted with molecules come mainly through the van der Waals
  • Suitable substrates according to the invention are those substrates whose
  • Material is able to react as educt with another feed reactant to a product with a higher molar volume, whereby the formation of a growth layer on the substrate is effected.
  • Particularly advantageous are the fol lowing combinations, wherein j ewei ls inks from the arrow the starting material and right of the arrow the product / the products is called, without naming the reactant supplied reactant educt or by-products in detail:
  • Fe-Fe 3 C Fe 7 C 3 , Fe 2 C.
  • III-V GaP, GaAs, InP, InSb, InAs, GaSb, GaN, AlN, InN, Al x GaI.
  • Nonlinear optics LiNb0 3 , LiTa0 3 , KDP (H 2 P0 4 ) - solar cells: CdS, CdSe, CdTe, CuInSe 2 , CuInGaSe 2 , CuInS 2 ,
  • the reservoir (or reservoirs) is provided on at least one of the wafers, directly at the respective contact surface, in which a certain amount of at least one of the wafers
  • fed educts for the volume expansion reaction is storable.
  • Educts can therefore be, for example, O 2 , O 3 , H 2 O, N 2 , NH 3 , H 2 O 2, etc. Due to the expansion, in particular due to oxide growth, due to the endeavor of the reaction partners to lower the system energy, any gaps, pores, voids between the contact surfaces are minimized and the bond force is correspondingly increased by approximating the distances between the substrates in these regions. In the best case, the existing gaps, pores and cavities are completely closed, so that the entire B onding Assembly increases and thus the B ondkraft according to the invention increases accordingly.
  • the contact surfaces usually show a roughness with a
  • R q square roughness
  • the reaction according to the invention is suitable for growing the growth layer by 0.1 to 0.3 nm in a conventional wafer surface of a circular wafer having a diameter of 200 to 300 mm with 1 monolayer (ML) of water.
  • the reservoir it is therefore provided in particular to store at least 2 ml, preferably at least 5 ml, more preferably at least 10 ml of fluid, in particular water, in the reservoir.
  • Particularly preferred is the formation of the reservoir by
  • Plasmabeaufschlagung as by the Plasmabeaufschlung also a smoothing of the contact surface and a hydrophilization as synergy effects are effected.
  • the smoothing of the surface by plasma activation is predominantly achieved by a viscous flow of the material of the surface layer.
  • the increase in the hydrophilicity is effected in particular by the proliferation of silicon-silicon compounds, preferably by cracking S i-O compounds present on the surface, such as S i-O-Si, in particular according to the following reaction:
  • Another side effect is that the pre-B ond strength, in particular by a factor of 2 to 3, is improved.
  • the formation of the reservoir in the cavity is not at the first contact surface of the first substrate (and optionally a second substrate)
  • Reservoirs in the surface layer on the second contact surface of the second substrate s) takes place, for example, by plasma activation of the first substrate coated with a native oxide, in particular silicon dioxide.
  • a native oxide in particular silicon dioxide.
  • the second surface of the second substrate is activated or created an additional reservoir, for which apply the features described for the first reservoir analog.
  • Plasma activation is performed in a vacuum chamber to adjust the conditions required for the plasma.
  • N 2 gas, 0 2 gas or argon gas N 2 gas, 0 2 gas or argon gas
  • Reservoir with a depth of up to 10 nm, preferably up to 5 microns, more preferably to 3 nm of the treated surface, in this case of the first contact surface is prepared. According to the invention, any one can
  • Particle species atoms and / or molecule e, are used, which are suitable. to create the reservoir.
  • those atoms and / or molecule e are used, which are suitable. to create the reservoir.
  • those atoms and / or molecule e are used, which are suitable. to create the reservoir.
  • those atoms and / or molecule e are used, which are suitable. to create the reservoir.
  • Used molecules that creates the reservoir with the required properties are above all the pore size, pore distribution and pore density.
  • the relevant properties are above all the pore size, pore distribution and pore density.
  • Gas mixtures such as air or forming gas consisting of 95% Ar and 5% H 2 are used.
  • the following ions are present in the reservoir during the plasma treatment: ⁇ +, N 2 +, 0+, 0 2 +, Ar +.
  • the first educt is absorbable.
  • the surface layer and, correspondingly, the reservoir can extend into the reaction layer.
  • Plasma species that can react with the reaction layer and at least partially, preferably predominantly consist of the first starting material.
  • the second starting material is Si / Si, a ⁇ -plasma species would be advantageous.
  • Oxygen ions are advantageously used, since they can react with Si to form silicon oxide and therefore do not react again
  • the preferred bonding to silicon prevents oxygen gas after bonding to a
  • the formation of the reservoir is based on the following considerations:
  • the pore size is less than 10 nm, preferably less than 5 nm, more preferably less than 1 nm, even more preferably less than 0.5 nm, most preferably less than 0.2 nm.
  • the pore density is preferably directly proportional to the density of the particles which generate the pores by impaction, most preferably even by the partial pressure of the impact species variable, and depending on the treatment time and the parameters, in particular of the plasma system used.
  • the pore distribution preferably has at least one region of greatest pore concentration below the surface, by variation of the parameters of several such regions, which become one, preferably
  • the near-surface region has a pore density during the blast, which is almost identical to the pore density near the surface. After the end of the plasma treatment, the pore density at the surface due to
  • the pore distribution in the thickness direction has a steep fl at with respect to the surface and a flatter, but steadily decreasing fl at with respect to the b ble (cf.
  • the reservoir can be achieved through targeted use and combination of
  • FIG. 7 shows a representation of
  • Concentration of injected nitrogen atoms by plasma as a function of the penetration depth into a silicon oxide layer.
  • Plasma activation allows a reservoir with one possible
  • the reservoir prefferably be filled with the formation of the reservoir by applying the reservoir as a coating to the first substrate, the coating already comprising the first educt.
  • the reservoir is in the form of a porous layer with a porosity in the nanometer range or as a channel-emitting layer with a channel thickness of less than 10 nm, more preferably less than 5 nm, even more preferably less than 2 nm, with the greatest advantage one than 1 nm. Al with the greatest preference klei ner than 0.5 nm conceivable.
  • Exposing the reservoir to a gaseous atmosphere in particular atomic gas, molecular gas, gas mixtures,
  • Hydrogen peroxide vapor-containing atmosphere and Suitable starting materials are the following compounds: ⁇ + , 0 2 , 0 3 , N 2 , NH 3 , H 2 0, H 2 0 2 and / or NH 4 OH.
  • hydrogen peroxide has the advantage of having a greater oxygen to hydrogen ratio. Furthermore, hydrogen peroxide has the advantage of having a greater oxygen to hydrogen ratio. Furthermore dissociated
  • the formation of the growth layer and strengthening of the irreversible bond by diffusion of the first starting material into the reaction layer are carried out.
  • Another advantageous heat-treating method is dielectric heating by microwaves. It is particularly advantageous if the irreversible bond has a B ondsource of greater than 1, 5 J / m 2 , in particular greater than 2 J / m 2 , preferably greater than 2.5 J / m 2 .
  • the bond strength can be increased in a particularly advantageous manner in that, in the reaction according to the invention, a product having a larger molar volume than the molar volume of the second starting material is formed in the reaction layer.
  • a product having a larger molar volume than the molar volume of the second starting material is formed in the reaction layer.
  • an increase in the second substrate is effected, whereby gaps between the contact surfaces can be separated by the fiction, contemporary chemical reaction mar.
  • the distance between tween the contact surfaces so the average distance is reduced and minimized dead space.
  • reaction layer of an ox idierbaren material in particular predominantly, preferably in wesentl vol ital, from S i, Ge, InP, G aP or GaN or one of the other in the above list alternatively mentioned material.
  • a growth layer in particular predominantly of native oxide material, preferably
  • Silica dioxide is provided.
  • the growth layer is subject to a by the reaction of the invention caused growth.
  • the growth takes place starting from the transition Si-S i0 2 by new formation of amorphous Si0 2 and thereby induced deformation, in particular bulging, the
  • Substrates is increased. Particularly advantageous is a temperature between 200 and 400 ° C, preferably in about 200 ° C and 1 50 ° C,
  • the growth layer can be divided into several recruiting oak.
  • the growth layer may at the same time be a reservoir formation layer of the second substrate, one more time, the reaction eliminating the reservoir.
  • the growth layer and / or the surface layer has an average thickness A between 0, 1 nm and 5 nm before the formation of the irreversible surface.
  • Growth layer and / or the surface layer through, in particular by diffusion of the first starting material through the growth layer and / or the surface layer h through the reaction layer. Furthermore, the activation of the surface can cause diffusion through the generation of
  • thinning can play a decisive role, since the reaction can be further accelerated and / or the temperature can be further reduced.
  • the thinning can be carried out in particular by etching, preferably in a moist atmosphere, more preferably in situ.
  • the thinning is carried out in particular by dry etching, preferably in situ. In situ here means the implementation in one and the same chamber in which at least one previous and / or a subsequent step is / are carried out. Wet etching takes place with chemicals in the vapor phase, while dry etching with chemicals takes place in the liquid state.
  • the growth layer consists of silica
  • it can be etched with hydrofluoric acid or dilute hydrofluoric acid.
  • the growth layer consists of pure Si, can be etched with KOH.
  • the formation of the reservoir is carried out in a vacuum.
  • contamination of the reservoir with undesirable materials or compounds can be avoided.
  • the filling of the reservoir takes place by one or more of the following steps:
  • the reservoir is preferably in a thickness between 0, 1nm and 25nm, more preferably between 0, 1nm and 15nm, with even greater magnitude between 0. 1 nm and 10 nm, most preferably between 0, 1 nm and 5 ⁇ m. Furthermore, according to an embodiment of the invention, it is advantageous if the distance B between the reservoir and the container is greater
  • the distance B may according to the invention influenced by the thinning or hergestel l t.
  • An apparatus for carrying out the method according to the invention is provided with a chamber for forming the reservoir and a chamber, in particular separately provided for filling the reservoir and a,
  • the filling of the reservoir can also take place directly via the atmosphere, ie either in a chamber which can be opened to the atmosphere or simply on a structure, which does not have a jacket but can handle the wafer semi-automatically and / or fully automatically.
  • FIG. 1 a shows a first step of the method according to the invention
  • Figure 1 b an al ternative first step of the invention
  • FIGa and 2b further steps of the process according to the invention for
  • FIG. 3 shows the steps according to FIG. 1, FIG. 2 a and FIG.
  • FIG. 4 shows an embodiment of the invention for forming a
  • Figure 5 is an enlarged view of the two
  • Figure 6 is a further enlarged representation of the expiring at the interface between the two contact surfaces
  • FIG. 7 shows a diagram of the generation according to the invention
  • FIG. 1 a which shows only a section of the at or immediate bar after the pre-B ond step between a first
  • the first substrate 1 and the second substrate 2 are held by the attractive force of the hydrogen bonds between the OH groups present on the surface and the H 2 O molecules and between the H 2 O molecules alone.
  • the hydrophilicity toward the first contact surface 3 is increased in a preceding step by a plasma treatment of the first contact surface 3.
  • the second contact surface 4 is additionally assigned to a plasma treatment
  • a reservoir 5 is present in the surface layer 6 consisting of native silicon dioxide, and in the alternative embodiment according to FIG. 1 b a second,
  • a growth layer 8 is provided on the second substrate 2, which may be at least partially the reservoir formation layer 6 'at the same time. Accordingly, I can add another growth layer between the
  • Reservoirbil training layer 6 'and the reaction layer 7' may be provided.
  • Plasma treatment is the reservoir 5 (and possibly the reservoir 5 ')
  • the reservoir may also contain reduced species of the ions present in the plasma process, in particular 0 2 , N 2 , H 2 , Ar.
  • the Kunststoffe en 3, 4 have after Kon clocking in the i n the figures l a or 1 b shown Stadi to still a rel fariv far distance.
  • the existing bond strength is relatively low and is approximately between 100 mJ / cm 2 and 300 mJ / cm 2 , in particular over 200 raJ / cm 2 .
  • the previous plasma activation plays a decisive role, in particular because of the increased hydrophilicity of the plasma-activated first contact surface 3 and a smoothing effect caused by the plasma activation.
  • Prebond The process shown in FIG. 1, called Prebond, can be any process shown in FIG. 1, called Prebond.
  • FIGS. 2a and 2b show a hydrophilic B ond, wherein the S iOS i bridge comes about with elimination of water through -OH terminated surfaces.
  • the processes in FIGS. 2a and 2b last about 300 hours at room temperature. B ei 50 ° C approx. 60 h.
  • the state in Fig. 2b occurs without manufacture ment of Reservoirs 5 (or the reservoirs 5, 5 ') at the temperatures mentioned not on.
  • H 2 0 molecules are formed which provide at least partially for further filling in the reservoir 5, as far as free space is available.
  • the remaining H 2 O molecules are removed.
  • about 3 to 5 individual layers of OH groups or H 2 O are present, and from the step according to FIG. 1 to step 2 , 1 to 3 monolayers of H 2 O are removed or taken up in the reservoir 5.
  • the temperature is preferred with a maximum of 500 ° C, more preferably ma imal 300 ° C, even more preferably with a maximum of 200 ° C, most preferably with a maximum of 100 ° C not increased above room temperature to provide an irreversible bond between the first and second contact surfaces.
  • relatively low temperatures are only possible because the reservoir 5 (and optionally the reservoir 5 ') comprises the first starting material for the reaction shown in FIGS. 5 and 6:
  • a growth layer 8 is provided, which may be identical to the surface layer 6 * .
  • a further growth layer 8' is also provided between the first contact surface 3 and a further reaction layer 7 'corresponding to the reaction layer 7, wherein the reactions in the
  • volume at the interface between the surface layer 6 'and the reaction layer 7 grows in the form a growth layer 8, wherein due to the goal s of minimizing the Gibbs free enthalpy enthalpy takes place an increased growth in areas where gaps 9 between the contact surfaces 3, 4 are present. Due to the increase in volume of
  • H 2 0 molecules diffuse as the first starting material from the reservoir 5 to the reaction layer 7 (and possibly from the reservoir 5 'to the reaction layer 7'). This diffusion can either be via a direct contact of the native oxide layers
  • silicon dioxide ie a chemical compound having a larger molar volume than pure silicon
  • the silica grows at the interface of the reaction layer 7 with the growth layer 8 (or the interface of the reaction layer 7 'with the growth layer 8') and thereby deforms the formed as a native oxide growth layer 8, in the direction of the gaps 9. Again H 2 O molecules are needed from the reservoir.
  • Welding contributes, in contrast to the partially non-welded products in the prior art, fundamentally to increase the bonding force.
  • the type of bond between the two welded together native silicon oxide surfaces is a mixed form of koval entern and ionic moiety.
  • Reaction layer 7 (and optionally 7 ') consists of silicon and each of a thin as possible native oxide layer as a growth layer 8 (and optionally 8').
  • a thin native oxide layer is for two reasons
  • the growth layer 8 is very thin, in particular by additional thinning, so that it is formed by the newly formed reaction product 10 on the reaction layer 7 to the surface layer 6, which is likewise formed as a native oxide layer
  • opposite substrate 1 can bulge out, mainly in areas of the nano-gaps 9. Furthermore, are as short as possible
  • the first substrate 1 also consists of a silicon layer and an existing, as thin as possible native oxide layer as the surface layer 6, in which at least partially or completely the reservoir 5 is formed.
  • the reservoir 5 (and possibly the reservoir 5 '), according to the invention, at least the amount of first starting material required to close the nano-gaps 9 is filled up, thereby providing an optimum

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Abstract

La présente invention concerne un procédé de liaison d'une première surface de contact (3) d'un premier substrat (1) et d'une deuxième surface de contact (4) d'un deuxième substrat (2). Le procédé comprend les étapes suivantes, notamment dans l'ordre suivant : - formation d'un réservoir (5) dans une couche superficielle (6) contre la première surface de contact (3), ladite couche superficielle (6) étant constituée au moins principalement d'un matériau oxyde natif, - remplissage au moins partiel du réservoir (5) avec un premier produit de départ ou d'un premier groupe de produits de départ, – mise en contact de la première surface de contact (3) avec la deuxième surface de contact (4) pour former une pré-liaison, - formation d'une liaison permanente entre la première et la deuxième surfaces de contact (3, 4), au moins partiellement renforcée par réaction du premier produit de départ avec un deuxième produit de départ contenu dans une couche réactionnelle (7) du deuxième substrat.
EP11714257.0A 2011-04-08 2011-04-08 Procédé de liaison permanente de plaquettes de semi-conducteurs Withdrawn EP2695183A1 (fr)

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SG192180A1 (en) 2013-08-30
TW201250785A (en) 2012-12-16
WO2012136267A1 (fr) 2012-10-11
KR101794390B1 (ko) 2017-12-01
TWI543237B (zh) 2016-07-21
US10825793B2 (en) 2020-11-03
CN103477420A (zh) 2013-12-25
JP2014516470A (ja) 2014-07-10
US20140017877A1 (en) 2014-01-16
CN103477420B (zh) 2016-11-16

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