IT1115628B - Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio - Google Patents

Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio

Info

Publication number
IT1115628B
IT1115628B IT21347/77A IT2134777A IT1115628B IT 1115628 B IT1115628 B IT 1115628B IT 21347/77 A IT21347/77 A IT 21347/77A IT 2134777 A IT2134777 A IT 2134777A IT 1115628 B IT1115628 B IT 1115628B
Authority
IT
Italy
Prior art keywords
epitaxial layer
silicon substrate
monocrystalline silicon
monocrystalline
silicon
Prior art date
Application number
IT21347/77A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1115628B publication Critical patent/IT1115628B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT21347/77A 1976-05-11 1977-03-17 Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio IT1115628B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68524876A 1976-05-11 1976-05-11

Publications (1)

Publication Number Publication Date
IT1115628B true IT1115628B (it) 1986-02-03

Family

ID=24751374

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21347/77A IT1115628B (it) 1976-05-11 1977-03-17 Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio

Country Status (5)

Country Link
JP (1) JPS52136568A (it)
DE (1) DE2711543A1 (it)
FR (1) FR2350877A1 (it)
GB (1) GB1515837A (it)
IT (1) IT1115628B (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (de) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten
FR2968316B1 (fr) * 2010-12-01 2013-06-28 Commissariat Energie Atomique Procede de preparation d'une couche de silicium cristallise a gros grains

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer

Also Published As

Publication number Publication date
GB1515837A (en) 1978-06-28
FR2350877A1 (fr) 1977-12-09
DE2711543A1 (de) 1977-11-24
JPS52136568A (en) 1977-11-15

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