BE831381A - Procede de dopage d'une couche de semi-conducteur - Google Patents

Procede de dopage d'une couche de semi-conducteur

Info

Publication number
BE831381A
BE831381A BE158309A BE158309A BE831381A BE 831381 A BE831381 A BE 831381A BE 158309 A BE158309 A BE 158309A BE 158309 A BE158309 A BE 158309A BE 831381 A BE831381 A BE 831381A
Authority
BE
Belgium
Prior art keywords
doping
semiconductor layer
semiconductor
layer
Prior art date
Application number
BE158309A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE831381A publication Critical patent/BE831381A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE158309A 1974-07-15 1975-07-15 Procede de dopage d'une couche de semi-conducteur BE831381A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2433991A DE2433991A1 (de) 1974-07-15 1974-07-15 Verfahren zum dotieren einer halbleiterschicht

Publications (1)

Publication Number Publication Date
BE831381A true BE831381A (fr) 1975-11-03

Family

ID=5920613

Family Applications (1)

Application Number Title Priority Date Filing Date
BE158309A BE831381A (fr) 1974-07-15 1975-07-15 Procede de dopage d'une couche de semi-conducteur

Country Status (6)

Country Link
US (1) US3967982A (fr)
JP (1) JPS5140074A (fr)
BE (1) BE831381A (fr)
DE (1) DE2433991A1 (fr)
FR (1) FR2279222A1 (fr)
IT (1) IT1039205B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2552621C3 (de) * 1975-11-24 1979-09-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes
US4277307A (en) * 1977-10-17 1981-07-07 Siemens Aktiengesellschaft Method of restoring Si crystal lattice order after neutron irradiation
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
DE3044723C2 (de) * 1980-11-27 1984-01-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines mit einer niederohmigen aktiven Halbleiterschicht versehenen hochohmigen Substratkörpers
JPS57210635A (en) * 1981-06-19 1982-12-24 Tokyo Daigaku Manufacture of semiconductor device
US4526624A (en) * 1982-07-02 1985-07-02 California Institute Of Technology Enhanced adhesion of films to semiconductors or metals by high energy bombardment
DE3511363A1 (de) * 1985-03-28 1986-10-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bereichen mit einstellbarer, gleichfoermiger dotierung in siliziumkristallscheiben durch neutronenbestrahlung sowie verwendung dieses verfahrens zur herstellung von leistungsthyristoren
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
DE3942387A1 (de) * 1989-12-21 1991-06-27 Florian Fischer Transportsystem, insbesondere zum transportieren von siliziumeinkristallen durch das becken eines forschungsreaktors
US5212100A (en) * 1991-12-04 1993-05-18 Texas Instruments Incorporated P-well CMOS process using neutron activated doped N-/N+ silicon substrates
TW330318B (en) * 1997-01-28 1998-04-21 Ind Tech Res Inst The BJT device and its producing method
US6372041B1 (en) 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
WO2001004940A1 (fr) * 1999-07-13 2001-01-18 Gan Semiconductor, Inc. Procede de dopage de substrats en nitrure de gallium (gan) et substrat en gan dope ainsi produit
GB9916370D0 (en) * 1999-07-14 1999-09-15 Koninkl Philips Electronics Nv Manufacture of semiconductor devices and material
US9887087B1 (en) * 2014-07-08 2018-02-06 Michael Keith Fuller Semiconductor and other materials by thermal neutron transmutation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1194374A (fr) * 1957-04-12 1959-11-09
DE1948884B2 (de) * 1969-09-27 1971-09-30 Verfahren zum beseitigen von inversionsschichten

Also Published As

Publication number Publication date
FR2279222A1 (fr) 1976-02-13
FR2279222B1 (fr) 1979-04-06
IT1039205B (it) 1979-12-10
JPS5140074A (fr) 1976-04-03
DE2433991A1 (de) 1976-02-05
US3967982A (en) 1976-07-06

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