BE845696A - Procede de dopage de barreaux semi-conducteurs - Google Patents

Procede de dopage de barreaux semi-conducteurs

Info

Publication number
BE845696A
BE845696A BE170226A BE170226A BE845696A BE 845696 A BE845696 A BE 845696A BE 170226 A BE170226 A BE 170226A BE 170226 A BE170226 A BE 170226A BE 845696 A BE845696 A BE 845696A
Authority
BE
Belgium
Prior art keywords
doping process
semiconductor bar
bar doping
semiconductor
doping
Prior art date
Application number
BE170226A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE845696A publication Critical patent/BE845696A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE170226A 1975-09-01 1976-08-31 Procede de dopage de barreaux semi-conducteurs BE845696A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752538812 DE2538812A1 (de) 1975-09-01 1975-09-01 Verfahren zum dotieren von halbleiterstaeben

Publications (1)

Publication Number Publication Date
BE845696A true BE845696A (fr) 1977-02-28

Family

ID=5955319

Family Applications (1)

Application Number Title Priority Date Filing Date
BE170226A BE845696A (fr) 1975-09-01 1976-08-31 Procede de dopage de barreaux semi-conducteurs

Country Status (8)

Country Link
US (1) US4110586A (fr)
JP (1) JPS5230158A (fr)
BE (1) BE845696A (fr)
DE (1) DE2538812A1 (fr)
DK (1) DK366276A (fr)
FR (1) FR2321938A1 (fr)
IT (1) IT1066219B (fr)
NL (1) NL7608326A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270972A (en) * 1980-03-31 1981-06-02 Rockwell International Corporation Method for controlled doping semiconductor material with highly volatile dopant
DE3873173T2 (de) * 1987-05-25 1993-03-04 Shinetsu Handotai Kk Vorrichtung fuer hf-induktionsheizung.
MY109224A (en) * 1993-02-11 1996-12-31 Samsung Display Devices Co Ltd Mixed blue emitting phosphor.
US5887018A (en) * 1996-07-09 1999-03-23 Wm. Marsh Rice University Longitudinal electromagnetic levitator
CN1072686C (zh) * 1997-07-10 2001-10-10 中国科学院长春应用化学研究所 光固聚酯丙烯酸氨基甲酸酯的合成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL231978A (fr) * 1958-10-04
FR1297973A (fr) * 1960-07-04 1962-07-06 Wacker Chemie Gmbh Procédé de dopage, par exemple de corps semi-conducteurs
DK138779B (da) * 1966-06-15 1978-10-30 Siemens Ag Fremgangsmåde til digelfri zonesmeltning.
DE1519908A1 (de) * 1966-12-30 1970-07-02 Siemens Ag Vorrichtung zum Herstellen eines kristallinen Stabes durch tiegelfreies Zonenschmelzen
US3935059A (en) * 1969-07-21 1976-01-27 U.S. Philips Corporation Method of producing single crystals of semiconductor material by floating-zone melting
DE2141188C3 (de) * 1971-08-17 1979-09-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung für das tiegellose Zonenschmelzen
DE2338338C3 (de) * 1973-07-27 1979-04-12 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes

Also Published As

Publication number Publication date
US4110586A (en) 1978-08-29
NL7608326A (nl) 1977-03-03
JPS5230158A (en) 1977-03-07
DK366276A (da) 1977-03-02
FR2321938B1 (fr) 1979-05-04
FR2321938A1 (fr) 1977-03-25
IT1066219B (it) 1985-03-04
DE2538812A1 (de) 1977-03-03

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