DK366276A - Fremgangsmade til dotering af halvlederstave - Google Patents
Fremgangsmade til dotering af halvlederstaveInfo
- Publication number
- DK366276A DK366276A DK366276A DK366276A DK366276A DK 366276 A DK366276 A DK 366276A DK 366276 A DK366276 A DK 366276A DK 366276 A DK366276 A DK 366276A DK 366276 A DK366276 A DK 366276A
- Authority
- DK
- Denmark
- Prior art keywords
- salmon
- sticks
- doping
- procedure
- salmon sticks
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752538812 DE2538812A1 (de) | 1975-09-01 | 1975-09-01 | Verfahren zum dotieren von halbleiterstaeben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK366276A true DK366276A (da) | 1977-03-02 |
Family
ID=5955319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK366276A DK366276A (da) | 1975-09-01 | 1976-08-13 | Fremgangsmade til dotering af halvlederstave |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4110586A (da) |
| JP (1) | JPS5230158A (da) |
| BE (1) | BE845696A (da) |
| DE (1) | DE2538812A1 (da) |
| DK (1) | DK366276A (da) |
| FR (1) | FR2321938A1 (da) |
| IT (1) | IT1066219B (da) |
| NL (1) | NL7608326A (da) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4270972A (en) * | 1980-03-31 | 1981-06-02 | Rockwell International Corporation | Method for controlled doping semiconductor material with highly volatile dopant |
| EP0292920B1 (en) * | 1987-05-25 | 1992-07-29 | Shin-Etsu Handotai Company Limited | Rf induction heating apparatus |
| MY109224A (en) * | 1993-02-11 | 1996-12-31 | Samsung Display Devices Co Ltd | Mixed blue emitting phosphor. |
| US5887018A (en) * | 1996-07-09 | 1999-03-23 | Wm. Marsh Rice University | Longitudinal electromagnetic levitator |
| CN1072686C (zh) * | 1997-07-10 | 2001-10-10 | 中国科学院长春应用化学研究所 | 光固聚酯丙烯酸氨基甲酸酯的合成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL231978A (da) * | 1958-10-04 | |||
| FR1297973A (fr) * | 1960-07-04 | 1962-07-06 | Wacker Chemie Gmbh | Procédé de dopage, par exemple de corps semi-conducteurs |
| DK138779B (da) * | 1966-06-15 | 1978-10-30 | Siemens Ag | Fremgangsmåde til digelfri zonesmeltning. |
| DE1519908A1 (de) * | 1966-12-30 | 1970-07-02 | Siemens Ag | Vorrichtung zum Herstellen eines kristallinen Stabes durch tiegelfreies Zonenschmelzen |
| US3935059A (en) * | 1969-07-21 | 1976-01-27 | U.S. Philips Corporation | Method of producing single crystals of semiconductor material by floating-zone melting |
| DE2141188C3 (de) * | 1971-08-17 | 1979-09-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung für das tiegellose Zonenschmelzen |
| DE2338338C3 (de) * | 1973-07-27 | 1979-04-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Dotieren beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
-
1975
- 1975-09-01 DE DE19752538812 patent/DE2538812A1/de active Pending
-
1976
- 1976-07-27 NL NL7608326A patent/NL7608326A/xx unknown
- 1976-08-13 DK DK366276A patent/DK366276A/da unknown
- 1976-08-26 US US05/717,959 patent/US4110586A/en not_active Expired - Lifetime
- 1976-08-30 IT IT51073/76A patent/IT1066219B/it active
- 1976-08-31 BE BE170226A patent/BE845696A/xx unknown
- 1976-08-31 FR FR7626210A patent/FR2321938A1/fr active Granted
- 1976-09-01 JP JP51105411A patent/JPS5230158A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1066219B (it) | 1985-03-04 |
| DE2538812A1 (de) | 1977-03-03 |
| BE845696A (fr) | 1977-02-28 |
| JPS5230158A (en) | 1977-03-07 |
| FR2321938A1 (fr) | 1977-03-25 |
| US4110586A (en) | 1978-08-29 |
| FR2321938B1 (da) | 1979-05-04 |
| NL7608326A (nl) | 1977-03-03 |
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