DE1948884B2 - Verfahren zum beseitigen von inversionsschichten - Google Patents

Verfahren zum beseitigen von inversionsschichten

Info

Publication number
DE1948884B2
DE1948884B2 DE19691948884 DE1948884A DE1948884B2 DE 1948884 B2 DE1948884 B2 DE 1948884B2 DE 19691948884 DE19691948884 DE 19691948884 DE 1948884 A DE1948884 A DE 1948884A DE 1948884 B2 DE1948884 B2 DE 1948884B2
Authority
DE
Germany
Prior art keywords
procedure
inversion layers
inversion
layers
removing inversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691948884
Other languages
English (en)
Other versions
DE1948884A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE19691948884 priority Critical patent/DE1948884B2/de
Priority to US00074261A priority patent/US3733222A/en
Priority to GB4540970A priority patent/GB1318603A/en
Priority to FR707034893A priority patent/FR2063040B3/fr
Publication of DE1948884A1 publication Critical patent/DE1948884A1/de
Publication of DE1948884B2 publication Critical patent/DE1948884B2/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
DE19691948884 1969-09-27 1969-09-27 Verfahren zum beseitigen von inversionsschichten Pending DE1948884B2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19691948884 DE1948884B2 (de) 1969-09-27 1969-09-27 Verfahren zum beseitigen von inversionsschichten
US00074261A US3733222A (en) 1969-09-27 1970-09-22 Method of removing inversion layers from semiconductor bodies of p-type conductivity
GB4540970A GB1318603A (en) 1969-09-27 1970-09-23 Method of reducing or removing inversion layers
FR707034893A FR2063040B3 (de) 1969-09-27 1970-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691948884 DE1948884B2 (de) 1969-09-27 1969-09-27 Verfahren zum beseitigen von inversionsschichten

Publications (2)

Publication Number Publication Date
DE1948884A1 DE1948884A1 (de) 1971-04-08
DE1948884B2 true DE1948884B2 (de) 1971-09-30

Family

ID=5746675

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691948884 Pending DE1948884B2 (de) 1969-09-27 1969-09-27 Verfahren zum beseitigen von inversionsschichten

Country Status (4)

Country Link
US (1) US3733222A (de)
DE (1) DE1948884B2 (de)
FR (1) FR2063040B3 (de)
GB (1) GB1318603A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2433991A1 (de) * 1974-07-15 1976-02-05 Siemens Ag Verfahren zum dotieren einer halbleiterschicht
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
JPS57210635A (en) * 1981-06-19 1982-12-24 Tokyo Daigaku Manufacture of semiconductor device
US4526624A (en) * 1982-07-02 1985-07-02 California Institute Of Technology Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Also Published As

Publication number Publication date
DE1948884A1 (de) 1971-04-08
US3733222A (en) 1973-05-15
FR2063040B3 (de) 1973-06-29
FR2063040A7 (de) 1971-07-02
GB1318603A (en) 1973-05-31

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