FR2063040A7 - - Google Patents
Info
- Publication number
- FR2063040A7 FR2063040A7 FR7034893A FR7034893A FR2063040A7 FR 2063040 A7 FR2063040 A7 FR 2063040A7 FR 7034893 A FR7034893 A FR 7034893A FR 7034893 A FR7034893 A FR 7034893A FR 2063040 A7 FR2063040 A7 FR 2063040A7
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/165—Transmutation doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691948884 DE1948884B2 (de) | 1969-09-27 | 1969-09-27 | Verfahren zum beseitigen von inversionsschichten |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2063040A7 true FR2063040A7 (de) | 1971-07-02 |
FR2063040B3 FR2063040B3 (de) | 1973-06-29 |
Family
ID=5746675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR707034893A Expired FR2063040B3 (de) | 1969-09-27 | 1970-09-25 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3733222A (de) |
DE (1) | DE1948884B2 (de) |
FR (1) | FR2063040B3 (de) |
GB (1) | GB1318603A (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2433991A1 (de) * | 1974-07-15 | 1976-02-05 | Siemens Ag | Verfahren zum dotieren einer halbleiterschicht |
FR2281650A1 (fr) * | 1974-08-06 | 1976-03-05 | Telecommunications Sa | Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede |
DE2753488C2 (de) * | 1977-12-01 | 1986-06-19 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4348351A (en) * | 1980-04-21 | 1982-09-07 | Monsanto Company | Method for producing neutron doped silicon having controlled dopant variation |
JPS57210635A (en) * | 1981-06-19 | 1982-12-24 | Tokyo Daigaku | Manufacture of semiconductor device |
US4526624A (en) * | 1982-07-02 | 1985-07-02 | California Institute Of Technology | Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
-
1969
- 1969-09-27 DE DE19691948884 patent/DE1948884B2/de active Pending
-
1970
- 1970-09-22 US US00074261A patent/US3733222A/en not_active Expired - Lifetime
- 1970-09-23 GB GB4540970A patent/GB1318603A/en not_active Expired
- 1970-09-25 FR FR707034893A patent/FR2063040B3/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1318603A (en) | 1973-05-31 |
DE1948884A1 (de) | 1971-04-08 |
DE1948884B2 (de) | 1971-09-30 |
FR2063040B3 (de) | 1973-06-29 |
US3733222A (en) | 1973-05-15 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |