US3733222A - Method of removing inversion layers from semiconductor bodies of p-type conductivity - Google Patents
Method of removing inversion layers from semiconductor bodies of p-type conductivity Download PDFInfo
- Publication number
- US3733222A US3733222A US00074261A US3733222DA US3733222A US 3733222 A US3733222 A US 3733222A US 00074261 A US00074261 A US 00074261A US 3733222D A US3733222D A US 3733222DA US 3733222 A US3733222 A US 3733222A
- Authority
- US
- United States
- Prior art keywords
- inversion layers
- type conductivity
- semiconductor bodies
- semiconductor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/165—Transmutation doping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
Abstract
A METHOD OF REMOVING INVERSION LAYERS FROM THE SURFACE OF HIGH RESISTANCE SEMICONDUCTOR REGIONS OF PTYPE CONDUCTIVITY WHICH BORDER, IN A SEMICONDUCTOR BODY, ON A SEMICONDUCTOR REGION OF N-TYPE CONDUCTIVIGY AND ARE COVERED WITH AN OXIDE MASKING LAYER. THE METHOD ESSENTIALLY COMPRISES IRRADIATING THE SEMICONDUCTOR BODY WITH NEUTRONS.
Description
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691948884 DE1948884B2 (en) | 1969-09-27 | 1969-09-27 | PROCEDURE FOR REMOVING INVERSION LAYERS |
Publications (1)
Publication Number | Publication Date |
---|---|
US3733222A true US3733222A (en) | 1973-05-15 |
Family
ID=5746675
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US00074261A Expired - Lifetime US3733222A (en) | 1969-09-27 | 1970-09-22 | Method of removing inversion layers from semiconductor bodies of p-type conductivity |
Country Status (4)
Country | Link |
---|---|
US (1) | US3733222A (en) |
DE (1) | DE1948884B2 (en) |
FR (1) | FR2063040B3 (en) |
GB (1) | GB1318603A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2517939A1 (en) * | 1974-08-06 | 1976-02-26 | Telecommunications Sa | PROCESS FOR PRODUCING A PHOTODIOD SENSITIVE TO INFRARED RADIATION AND PHOTODIOD PRODUCED BY THIS PROCESS |
US3967982A (en) * | 1974-07-15 | 1976-07-06 | Siemens Aktiengesellschaft | Method of doping a semiconductor layer |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4348351A (en) * | 1980-04-21 | 1982-09-07 | Monsanto Company | Method for producing neutron doped silicon having controlled dopant variation |
US4469527A (en) * | 1981-06-19 | 1984-09-04 | Tokyo University | Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing |
US4526624A (en) * | 1982-07-02 | 1985-07-02 | California Institute Of Technology | Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2753488C2 (en) * | 1977-12-01 | 1986-06-19 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for the production of n-doped silicon by means of neutron irradiation |
-
1969
- 1969-09-27 DE DE19691948884 patent/DE1948884B2/en active Pending
-
1970
- 1970-09-22 US US00074261A patent/US3733222A/en not_active Expired - Lifetime
- 1970-09-23 GB GB4540970A patent/GB1318603A/en not_active Expired
- 1970-09-25 FR FR707034893A patent/FR2063040B3/fr not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3967982A (en) * | 1974-07-15 | 1976-07-06 | Siemens Aktiengesellschaft | Method of doping a semiconductor layer |
DE2517939A1 (en) * | 1974-08-06 | 1976-02-26 | Telecommunications Sa | PROCESS FOR PRODUCING A PHOTODIOD SENSITIVE TO INFRARED RADIATION AND PHOTODIOD PRODUCED BY THIS PROCESS |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4348351A (en) * | 1980-04-21 | 1982-09-07 | Monsanto Company | Method for producing neutron doped silicon having controlled dopant variation |
US4469527A (en) * | 1981-06-19 | 1984-09-04 | Tokyo University | Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing |
US4526624A (en) * | 1982-07-02 | 1985-07-02 | California Institute Of Technology | Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
Also Published As
Publication number | Publication date |
---|---|
DE1948884B2 (en) | 1971-09-30 |
FR2063040B3 (en) | 1973-06-29 |
FR2063040A7 (en) | 1971-07-02 |
DE1948884A1 (en) | 1971-04-08 |
GB1318603A (en) | 1973-05-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TELEFUNKEN ELECTRONIC GMBH, THERESIENSTRASSE 2, D- Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:LICENTIA PATENT-VERWALTUNGS-GMBH, A GERMAN LIMITED LIABILITY COMPANY;REEL/FRAME:004215/0210 Effective date: 19831214 |