FR2281650A1 - Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede - Google Patents

Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede

Info

Publication number
FR2281650A1
FR2281650A1 FR7427282A FR7427282A FR2281650A1 FR 2281650 A1 FR2281650 A1 FR 2281650A1 FR 7427282 A FR7427282 A FR 7427282A FR 7427282 A FR7427282 A FR 7427282A FR 2281650 A1 FR2281650 A1 FR 2281650A1
Authority
FR
France
Prior art keywords
photodiode
manufacturing
infrared radiation
sensitive
photodiode sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7427282A
Other languages
English (en)
Other versions
FR2281650B1 (fr
Inventor
Gerard David Cohen-Solal
Alain Gilles Lussereau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR7427282A priority Critical patent/FR2281650A1/fr
Priority to DE2517939A priority patent/DE2517939C2/de
Priority to US05/572,225 priority patent/US3988774A/en
Priority to GB22853/75A priority patent/GB1508027A/en
Priority to NL7506863.A priority patent/NL160991C/xx
Priority to JP50086241A priority patent/JPS5144396B2/ja
Publication of FR2281650A1 publication Critical patent/FR2281650A1/fr
Application granted granted Critical
Publication of FR2281650B1 publication Critical patent/FR2281650B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam
FR7427282A 1974-08-06 1974-08-06 Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede Granted FR2281650A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7427282A FR2281650A1 (fr) 1974-08-06 1974-08-06 Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
DE2517939A DE2517939C2 (de) 1974-08-06 1975-04-23 Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode
US05/572,225 US3988774A (en) 1974-08-06 1975-04-28 Process for producing a photodiode sensitive to infrared radiation
GB22853/75A GB1508027A (en) 1974-08-06 1975-05-23 Process for producing a photodiode sensitive to infrared radiation
NL7506863.A NL160991C (nl) 1974-08-06 1975-06-10 Werkwijze voor de vervaardiging van een voor infra- roodstralinggevoelige fotodiode.
JP50086241A JPS5144396B2 (fr) 1974-08-06 1975-07-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7427282A FR2281650A1 (fr) 1974-08-06 1974-08-06 Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede

Publications (2)

Publication Number Publication Date
FR2281650A1 true FR2281650A1 (fr) 1976-03-05
FR2281650B1 FR2281650B1 (fr) 1976-12-31

Family

ID=9142164

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7427282A Granted FR2281650A1 (fr) 1974-08-06 1974-08-06 Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede

Country Status (6)

Country Link
US (1) US3988774A (fr)
JP (1) JPS5144396B2 (fr)
DE (1) DE2517939C2 (fr)
FR (1) FR2281650A1 (fr)
GB (1) GB1508027A (fr)
NL (1) NL160991C (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018744B1 (fr) * 1979-05-01 1984-07-18 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Détecteurs de rayonnement
FR2665800A1 (fr) * 1990-08-07 1992-02-14 Mitsubishi Electric Corp Photodetecteur a substrat semiconducteur composite et procede de fabrication.

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
FR2376513A1 (fr) * 1976-12-31 1978-07-28 Radiotechnique Compelec Dispositif semiconducteur muni d'un film protecteur
JPS5455228A (en) * 1977-10-10 1979-05-02 Nippon Denso Co Ltd Fuel injection pump for internal combustion engine
US4170781A (en) * 1978-04-06 1979-10-09 The United States Of America As Represented By The Secretary Of The Army Photodiode and method of manufacture
JPS56169376A (en) * 1980-05-30 1981-12-26 New Japan Radio Co Ltd Light receiving semiconductor device
JPS5745289A (en) * 1980-08-29 1982-03-15 Fujitsu Ltd Production of multidimentional semiconductor device
US4376663A (en) * 1980-11-18 1983-03-15 The United States Of America As Represented By The Secretary Of The Army Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate
US4357620A (en) * 1980-11-18 1982-11-02 The United States Of America As Represented By The Secretary Of The Army Liquid-phase epitaxial growth of cdTe on HgCdTe
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
FR2604298B1 (fr) * 1986-09-19 1988-10-28 Commissariat Energie Atomique Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JP3029497B2 (ja) * 1991-12-20 2000-04-04 ローム株式会社 フォトダイオードアレイおよびその製造法
EP0635892B1 (fr) * 1992-07-21 2002-06-26 Raytheon Company Photodétecteur en HgCdTe stable au recuit et procédé pour sa fabrication
US5296384A (en) * 1992-07-21 1994-03-22 Santa Barbara Research Center Bake-stable HgCdTe photodetector and method for fabricating same
US5633526A (en) * 1992-11-01 1997-05-27 Rohm Co., Ltd. Photodiode array and method for manufacturing the same
JP2859789B2 (ja) * 1992-11-13 1999-02-24 ローム株式会社 フォトダイオードアレイおよびその製法
US20120181545A1 (en) * 2009-09-30 2012-07-19 Sharp Kabushiki Kaisha Semiconductor device and method for producing same, and display device provided with semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614435B2 (de) * 1967-02-23 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
DE1948884B2 (de) * 1969-09-27 1971-09-30 Verfahren zum beseitigen von inversionsschichten

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018744B1 (fr) * 1979-05-01 1984-07-18 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Détecteurs de rayonnement
FR2665800A1 (fr) * 1990-08-07 1992-02-14 Mitsubishi Electric Corp Photodetecteur a substrat semiconducteur composite et procede de fabrication.

Also Published As

Publication number Publication date
FR2281650B1 (fr) 1976-12-31
NL160991C (nl) 1979-12-17
JPS5136088A (fr) 1976-03-26
DE2517939A1 (de) 1976-02-26
JPS5144396B2 (fr) 1976-11-27
NL7506863A (nl) 1976-02-10
NL160991B (nl) 1979-07-16
US3988774A (en) 1976-10-26
GB1508027A (en) 1978-04-19
DE2517939C2 (de) 1982-06-09

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