JPS5745289A - Production of multidimentional semiconductor device - Google Patents
Production of multidimentional semiconductor deviceInfo
- Publication number
- JPS5745289A JPS5745289A JP55120371A JP12037180A JPS5745289A JP S5745289 A JPS5745289 A JP S5745289A JP 55120371 A JP55120371 A JP 55120371A JP 12037180 A JP12037180 A JP 12037180A JP S5745289 A JPS5745289 A JP S5745289A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etching
- zns film
- ion
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To facilitate the subsequent mask matching remarkably by interposing a process of selectively etching the surface of a substrate between a process of selectively doping impurities and a process of mounting electrodes. CONSTITUTION:A ZnS film 2 is formed over the entire surface of a substrate as a sheet plate 1 of a P type HgCdTe with a clean flat surface. Then, the ZnS film 2 is selectively etched away to form a window for ion implantation and then, the surface of the substrate exposed in the hole is scraped by about 1,000Angstrom in the thickness by etching. Then, N type layers 41, 42... are formed by implantation of a donner ion, for example, boron ion. Then, once the ZnS film 2 is removed entirely, a new ZnS film is applied over the entire surface of the substrate to form an insulation film 5 and a hole for mounting electrodes by positioning a mask based on the steps generated by etching. Finally, metal layers 61, 62... are applied by coating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55120371A JPS5745289A (en) | 1980-08-29 | 1980-08-29 | Production of multidimentional semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55120371A JPS5745289A (en) | 1980-08-29 | 1980-08-29 | Production of multidimentional semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5745289A true JPS5745289A (en) | 1982-03-15 |
Family
ID=14784537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55120371A Pending JPS5745289A (en) | 1980-08-29 | 1980-08-29 | Production of multidimentional semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745289A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62118152U (en) * | 1986-01-21 | 1987-07-27 | ||
US11434953B2 (en) | 2017-11-27 | 2022-09-06 | Ntn Corporation | Electric actuator |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5136088A (en) * | 1974-08-06 | 1976-03-26 | Telecommunications Sa | |
JPS5177077A (en) * | 1974-12-27 | 1976-07-03 | Suwa Seikosha Kk | Handotaisochino seizohoho |
-
1980
- 1980-08-29 JP JP55120371A patent/JPS5745289A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5136088A (en) * | 1974-08-06 | 1976-03-26 | Telecommunications Sa | |
JPS5177077A (en) * | 1974-12-27 | 1976-07-03 | Suwa Seikosha Kk | Handotaisochino seizohoho |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62118152U (en) * | 1986-01-21 | 1987-07-27 | ||
JPS6342108Y2 (en) * | 1986-01-21 | 1988-11-04 | ||
US11434953B2 (en) | 2017-11-27 | 2022-09-06 | Ntn Corporation | Electric actuator |
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