IT1022419B - Metodo per orbare secondo una deter minata configurazione uno strato di ossido contenente silicio su un substrato - Google Patents
Metodo per orbare secondo una deter minata configurazione uno strato di ossido contenente silicio su un substratoInfo
- Publication number
- IT1022419B IT1022419B IT27844/74A IT2784474A IT1022419B IT 1022419 B IT1022419 B IT 1022419B IT 27844/74 A IT27844/74 A IT 27844/74A IT 2784474 A IT2784474 A IT 2784474A IT 1022419 B IT1022419 B IT 1022419B
- Authority
- IT
- Italy
- Prior art keywords
- orbating
- oxide layer
- layer containing
- substrate according
- containing silicon
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4577173A GB1451623A (en) | 1973-10-01 | 1973-10-01 | Method of prov8ding a patterned layer of silicon-containing oxide on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1022419B true IT1022419B (it) | 1978-03-20 |
Family
ID=10438531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT27844/74A IT1022419B (it) | 1973-10-01 | 1974-09-27 | Metodo per orbare secondo una deter minata configurazione uno strato di ossido contenente silicio su un substrato |
Country Status (6)
Country | Link |
---|---|
US (1) | US3969543A (it) |
JP (1) | JPS5062437A (it) |
DE (1) | DE2445714A1 (it) |
FR (1) | FR2246890B1 (it) |
GB (1) | GB1451623A (it) |
IT (1) | IT1022419B (it) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929682A1 (de) * | 1979-07-04 | 1981-01-15 | Bbc Brown Boveri & Cie | Verfahren zum aetzen von silizium- substraten und substrat zur durchfuehrung des verfahrens |
JPS589323A (ja) * | 1981-07-10 | 1983-01-19 | Nippon Telegr & Teleph Corp <Ntt> | 微細レジストパタンの形成方法 |
US4560641A (en) * | 1982-03-26 | 1985-12-24 | Hitachi, Ltd. | Method for forming fine multilayer resist patterns |
US4473676A (en) * | 1982-06-14 | 1984-09-25 | Eastman Kodak Company | Polymer compositions having a low coefficient of friction |
US4404276A (en) * | 1982-06-14 | 1983-09-13 | Eastman Kodak Company | Polymer compositions containing crosslinked silicone polycarbinol and having a low coefficient of friction |
USRE32514E (en) * | 1982-06-14 | 1987-10-06 | Eastman Kodak Company | Polymer compositions having a low coefficient of friction |
JPS58219734A (ja) * | 1982-06-14 | 1983-12-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法およびそれに用いる感光性材料 |
DE3334095A1 (de) * | 1983-09-21 | 1985-04-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum aetzen tiefer graeben in siliziumscheiben mit glatter oberflaeche |
US4702990A (en) * | 1984-05-14 | 1987-10-27 | Nippon Telegraph And Telephone Corporation | Photosensitive resin composition and process for forming photo-resist pattern using the same |
US4892617A (en) * | 1984-08-22 | 1990-01-09 | American Telephone & Telegraph Company, At&T Bell Laboratories | Processes involving lithographic materials |
US4665010A (en) * | 1985-04-29 | 1987-05-12 | International Business Machines Corporation | Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer |
JP2552648B2 (ja) * | 1985-12-02 | 1996-11-13 | 東京応化工業 株式会社 | ポジ型ホトレジストパタ−ンの安定化方法 |
US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
US5057396A (en) * | 1988-09-22 | 1991-10-15 | Tosoh Corporation | Photosensitive material having a silicon-containing polymer |
US5128170A (en) * | 1989-05-11 | 1992-07-07 | Kanegafunchi Kagaku Kogyo Kabushiki Kaisha | Method for manufacturing medical device having a highly biocompatible surface |
EP0911088A3 (de) * | 1997-10-21 | 2002-07-31 | Roche Diagnostics GmbH | Verfahren zur Beschichtung von Oberflächen |
TWI245774B (en) * | 2001-03-01 | 2005-12-21 | Shinetsu Chemical Co | Silicon-containing polymer, resist composition and patterning process |
TW594416B (en) * | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
JP4557497B2 (ja) * | 2002-03-03 | 2010-10-06 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物 |
JP2004038142A (ja) | 2002-03-03 | 2004-02-05 | Shipley Co Llc | ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物 |
US7189490B2 (en) * | 2002-10-21 | 2007-03-13 | Shipley Company, L.L.C. | Photoresists containing sulfonamide component |
JP2004177952A (ja) * | 2002-11-20 | 2004-06-24 | Rohm & Haas Electronic Materials Llc | 多層フォトレジスト系 |
EP1422565A3 (en) * | 2002-11-20 | 2005-01-05 | Shipley Company LLC | Multilayer photoresist systems |
US20040229159A1 (en) * | 2003-02-23 | 2004-11-18 | Subbareddy Kanagasabapathy | Fluorinated Si-polymers and photoresists comprising same |
TWI317458B (en) * | 2003-03-03 | 2009-11-21 | Rohm & Haas Elect Mat | Polymers and photoresists comprising same |
US7713753B2 (en) * | 2008-09-04 | 2010-05-11 | Seagate Technology Llc | Dual-level self-assembled patterning method and apparatus fabricated using the method |
US8968869B2 (en) | 2010-06-30 | 2015-03-03 | 3M Innovative Properties Company | Curable-on-demand polysiloxane coating composition |
CN102959024B (zh) | 2010-06-30 | 2016-08-24 | 3M创新有限公司 | 可固化聚硅氧烷涂层组合物 |
CN102985503A (zh) | 2010-06-30 | 2013-03-20 | 3M创新有限公司 | 包含双重反应性硅烷官能团的可固化组合物 |
US9006357B2 (en) | 2011-12-29 | 2015-04-14 | 3M Innovative Properties Company | Curable polysiloxane composition |
WO2013101477A1 (en) | 2011-12-29 | 2013-07-04 | 3M Innovative Properties Company | Curable polysiloxane coating composition |
WO2013101742A1 (en) | 2011-12-29 | 2013-07-04 | 3M Innovative Properties Company | Curable-on-demand polysiloxane coating composition |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272670A (en) * | 1965-08-27 | 1966-09-13 | Stanford Research Inst | Two-stable, high-resolution electronactuated resists |
US3726710A (en) * | 1970-09-02 | 1973-04-10 | Union Carbide Corp | Silicon paper release compositions |
DE2207495A1 (de) * | 1971-02-20 | 1972-08-24 | Dainippon Printing Co Ltd | Flachdruckplatten und Verfahren zu ihrer Herstellung |
GB1316711A (en) * | 1971-03-15 | 1973-05-16 | Mullard Ltd | Methods of producing films comprising siliceous material |
DE2302148C2 (de) * | 1972-01-18 | 1983-02-10 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zur Herstellung eines Phosphorsilicatglasschichtmusters |
GB1409327A (en) * | 1973-01-10 | 1975-10-08 | Dow Corning Ltd | Process for treating surfaces |
US3847771A (en) * | 1973-03-30 | 1974-11-12 | Scm Corp | Uv and laser curing of pigmented polymerizable binders |
US3873499A (en) * | 1973-11-29 | 1975-03-25 | Dow Corning | Fast curing mercaptoalkyl vinyl siloxane resins |
-
1973
- 1973-10-01 GB GB4577173A patent/GB1451623A/en not_active Expired
-
1974
- 1974-09-25 DE DE19742445714 patent/DE2445714A1/de not_active Ceased
- 1974-09-26 US US05/509,493 patent/US3969543A/en not_active Expired - Lifetime
- 1974-09-27 IT IT27844/74A patent/IT1022419B/it active
- 1974-10-01 FR FR7433042A patent/FR2246890B1/fr not_active Expired
- 1974-10-01 JP JP49112362A patent/JPS5062437A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US3969543A (en) | 1976-07-13 |
GB1451623A (en) | 1976-10-06 |
DE2445714A1 (de) | 1975-04-10 |
FR2246890A1 (it) | 1975-05-02 |
FR2246890B1 (it) | 1979-02-16 |
JPS5062437A (it) | 1975-05-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1022419B (it) | Metodo per orbare secondo una deter minata configurazione uno strato di ossido contenente silicio su un substrato | |
CA952661A (en) | Method for coating a substrate | |
AU502578B2 (en) | Passivation layer for semiconductor device | |
NO740017L (no) | Fremgangsmåte ved fremstilling av en anordning for overføring av bilder til et underlag. | |
IT1026142B (it) | Procedimento per produrre strati di carburo di silicio su un sostrato di silicio | |
IT1022509B (it) | Metodo di attacco di uno strato di ossido di silicio per produrre un bordo rastremato sullo stesso | |
IT1046128B (it) | Procedimento per formare uno strato passivante con almeno un apertura di contatto | |
IT1048278B (it) | Metodo per formare un ossido nativo stabile su semiconduttori composti basati su arseniuro di gallio | |
FR2279222A1 (fr) | Procede pour doper une couche semiconductrice | |
CA974659A (en) | Charged coupled devices using a thin insulated semiconductor layer | |
CH540993A (de) | Verfahren zum Erzeugen einer Oxydschicht auf einem Silizium-Substrat | |
CA958819A (en) | Apparatus for aligning a mask with respect to a semiconductor substrate | |
IT1054461B (it) | Substrato di nastro per stampatrice | |
IT1039516B (it) | Dispositivo per la formazione di una pellicola di ossido metallico su di una superficie vetrosa | |
IT948377B (it) | Dispositivo di vaporizzazione per applicare uno strato metallico su un sostrato oblungo | |
IT1020026B (it) | Metodo di deposito di uno strato epitassiale | |
IT947271B (it) | Dispositivo per applicare uno strato di rivestimento | |
FR2275510A1 (fr) | Procede pour revetir un substrat | |
CA948075A (en) | Method of depositing a layer of semiconductor material | |
AU498873B2 (en) | Semiconductor device with sunken insulator layer | |
IT1006472B (it) | Rivestimento protettivo per dispositivi semiconduttori | |
IT1027470B (it) | Procedimento per l assottigliamento di uno strato di materiale semicon duttore | |
CA999224A (en) | Methods and means for bonding an elastomer layer to a substrate | |
IT946902B (it) | Substrato di spinello accresciuto secondo il metodo czochralski modi ficato superficialmente per mezzo di un metodo di diffusione a sta to solido e metodo relativo | |
IT1115628B (it) | Processo per formare uno strato epitassiale di silicio monocristallino su un substrato di silicio |