JPS5062437A - - Google Patents
Info
- Publication number
- JPS5062437A JPS5062437A JP49112362A JP11236274A JPS5062437A JP S5062437 A JPS5062437 A JP S5062437A JP 49112362 A JP49112362 A JP 49112362A JP 11236274 A JP11236274 A JP 11236274A JP S5062437 A JPS5062437 A JP S5062437A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4577173A GB1451623A (en) | 1973-10-01 | 1973-10-01 | Method of prov8ding a patterned layer of silicon-containing oxide on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5062437A true JPS5062437A (ja) | 1975-05-28 |
Family
ID=10438531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49112362A Pending JPS5062437A (ja) | 1973-10-01 | 1974-10-01 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3969543A (ja) |
JP (1) | JPS5062437A (ja) |
DE (1) | DE2445714A1 (ja) |
FR (1) | FR2246890B1 (ja) |
GB (1) | GB1451623A (ja) |
IT (1) | IT1022419B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5615046A (en) * | 1979-07-04 | 1981-02-13 | Bbc Brown Boveri & Cie | Method of etching silicon substrate* silicon substrate having etching mask and method of manufacturing pressure sensor |
JPS589323A (ja) * | 1981-07-10 | 1983-01-19 | Nippon Telegr & Teleph Corp <Ntt> | 微細レジストパタンの形成方法 |
JPS58219734A (ja) * | 1982-06-14 | 1983-12-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法およびそれに用いる感光性材料 |
JPS62129849A (ja) * | 1985-12-02 | 1987-06-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジストパタ−ンの安定化方法 |
JP2013532223A (ja) * | 2010-06-30 | 2013-08-15 | スリーエム イノベイティブ プロパティズ カンパニー | オンデマンド型硬化性ポリシロキサンコーティング組成物 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4560641A (en) * | 1982-03-26 | 1985-12-24 | Hitachi, Ltd. | Method for forming fine multilayer resist patterns |
US4473676A (en) * | 1982-06-14 | 1984-09-25 | Eastman Kodak Company | Polymer compositions having a low coefficient of friction |
US4404276A (en) * | 1982-06-14 | 1983-09-13 | Eastman Kodak Company | Polymer compositions containing crosslinked silicone polycarbinol and having a low coefficient of friction |
USRE32514E (en) * | 1982-06-14 | 1987-10-06 | Eastman Kodak Company | Polymer compositions having a low coefficient of friction |
DE3334095A1 (de) * | 1983-09-21 | 1985-04-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum aetzen tiefer graeben in siliziumscheiben mit glatter oberflaeche |
US4702990A (en) * | 1984-05-14 | 1987-10-27 | Nippon Telegraph And Telephone Corporation | Photosensitive resin composition and process for forming photo-resist pattern using the same |
US4892617A (en) * | 1984-08-22 | 1990-01-09 | American Telephone & Telegraph Company, At&T Bell Laboratories | Processes involving lithographic materials |
US4665010A (en) * | 1985-04-29 | 1987-05-12 | International Business Machines Corporation | Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer |
US4732841A (en) * | 1986-03-24 | 1988-03-22 | Fairchild Semiconductor Corporation | Tri-level resist process for fine resolution photolithography |
US5057396A (en) * | 1988-09-22 | 1991-10-15 | Tosoh Corporation | Photosensitive material having a silicon-containing polymer |
EP0397130B1 (en) * | 1989-05-11 | 1995-04-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Medical device having highly biocompatible surface and method for manufacturing the same |
US6465054B2 (en) * | 1997-10-21 | 2002-10-15 | Roche Diagnostics Gmbh | Process for coating surfaces |
TWI245774B (en) * | 2001-03-01 | 2005-12-21 | Shinetsu Chemical Co | Silicon-containing polymer, resist composition and patterning process |
TW594416B (en) * | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
JP4557497B2 (ja) * | 2002-03-03 | 2010-10-06 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物 |
JP2004038142A (ja) | 2002-03-03 | 2004-02-05 | Shipley Co Llc | ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物 |
AU2003287194A1 (en) * | 2002-10-21 | 2004-05-13 | Shipley Company L.L.C. | Photoresists containing sulfonamide component |
EP1422566A1 (en) * | 2002-11-20 | 2004-05-26 | Shipley Company, L.L.C. | Multilayer photoresist systems |
JP2004206082A (ja) * | 2002-11-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 多層フォトレジスト系 |
US20040229159A1 (en) * | 2003-02-23 | 2004-11-18 | Subbareddy Kanagasabapathy | Fluorinated Si-polymers and photoresists comprising same |
KR101112482B1 (ko) * | 2003-03-03 | 2012-02-24 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. | Si-폴리머 및 이를 포함하는 포토레지스트 |
US7713753B2 (en) * | 2008-09-04 | 2010-05-11 | Seagate Technology Llc | Dual-level self-assembled patterning method and apparatus fabricated using the method |
US8841399B2 (en) | 2010-06-30 | 2014-09-23 | 3M Innovative Properties Company | Curable composition comprising dual reactive silane functionality |
EP2588550A1 (en) | 2010-06-30 | 2013-05-08 | 3M Innovative Properties Company | Curable polysiloxane coating composition |
CN104470983A (zh) | 2011-12-29 | 2015-03-25 | 3M创新有限公司 | 可固化聚硅氧烷组合物 |
CN104080838B (zh) | 2011-12-29 | 2016-08-17 | 3M创新有限公司 | 可按需固化的聚硅氧烷涂料组合物 |
CN105164184A (zh) | 2011-12-29 | 2015-12-16 | 3M创新有限公司 | 可固化聚硅氧烷涂料组合物 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3272670A (en) * | 1965-08-27 | 1966-09-13 | Stanford Research Inst | Two-stable, high-resolution electronactuated resists |
US3726710A (en) * | 1970-09-02 | 1973-04-10 | Union Carbide Corp | Silicon paper release compositions |
DE2207495A1 (de) * | 1971-02-20 | 1972-08-24 | Dainippon Printing Co Ltd | Flachdruckplatten und Verfahren zu ihrer Herstellung |
GB1316711A (en) * | 1971-03-15 | 1973-05-16 | Mullard Ltd | Methods of producing films comprising siliceous material |
US3877980A (en) * | 1972-01-18 | 1975-04-15 | Philips Corp | Methods of producing phosphosilicate glass patterns |
GB1409327A (en) * | 1973-01-10 | 1975-10-08 | Dow Corning Ltd | Process for treating surfaces |
US3915824A (en) * | 1973-03-30 | 1975-10-28 | Scm Corp | Uv and laser curing of the polymerizable binder |
US3873499A (en) * | 1973-11-29 | 1975-03-25 | Dow Corning | Fast curing mercaptoalkyl vinyl siloxane resins |
-
1973
- 1973-10-01 GB GB4577173A patent/GB1451623A/en not_active Expired
-
1974
- 1974-09-25 DE DE19742445714 patent/DE2445714A1/de not_active Ceased
- 1974-09-26 US US05/509,493 patent/US3969543A/en not_active Expired - Lifetime
- 1974-09-27 IT IT27844/74A patent/IT1022419B/it active
- 1974-10-01 FR FR7433042A patent/FR2246890B1/fr not_active Expired
- 1974-10-01 JP JP49112362A patent/JPS5062437A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5615046A (en) * | 1979-07-04 | 1981-02-13 | Bbc Brown Boveri & Cie | Method of etching silicon substrate* silicon substrate having etching mask and method of manufacturing pressure sensor |
JPS589323A (ja) * | 1981-07-10 | 1983-01-19 | Nippon Telegr & Teleph Corp <Ntt> | 微細レジストパタンの形成方法 |
JPS58219734A (ja) * | 1982-06-14 | 1983-12-21 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法およびそれに用いる感光性材料 |
JPS62129849A (ja) * | 1985-12-02 | 1987-06-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジストパタ−ンの安定化方法 |
JP2013532223A (ja) * | 2010-06-30 | 2013-08-15 | スリーエム イノベイティブ プロパティズ カンパニー | オンデマンド型硬化性ポリシロキサンコーティング組成物 |
Also Published As
Publication number | Publication date |
---|---|
FR2246890B1 (ja) | 1979-02-16 |
US3969543A (en) | 1976-07-13 |
FR2246890A1 (ja) | 1975-05-02 |
IT1022419B (it) | 1978-03-20 |
GB1451623A (en) | 1976-10-06 |
DE2445714A1 (de) | 1975-04-10 |