FR2246890B1 - - Google Patents

Info

Publication number
FR2246890B1
FR2246890B1 FR7433042A FR7433042A FR2246890B1 FR 2246890 B1 FR2246890 B1 FR 2246890B1 FR 7433042 A FR7433042 A FR 7433042A FR 7433042 A FR7433042 A FR 7433042A FR 2246890 B1 FR2246890 B1 FR 2246890B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7433042A
Other versions
FR2246890A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2246890A1 publication Critical patent/FR2246890A1/fr
Application granted granted Critical
Publication of FR2246890B1 publication Critical patent/FR2246890B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
FR7433042A 1973-10-01 1974-10-01 Expired FR2246890B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4577173A GB1451623A (en) 1973-10-01 1973-10-01 Method of prov8ding a patterned layer of silicon-containing oxide on a substrate

Publications (2)

Publication Number Publication Date
FR2246890A1 FR2246890A1 (fr) 1975-05-02
FR2246890B1 true FR2246890B1 (fr) 1979-02-16

Family

ID=10438531

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7433042A Expired FR2246890B1 (fr) 1973-10-01 1974-10-01

Country Status (6)

Country Link
US (1) US3969543A (fr)
JP (1) JPS5062437A (fr)
DE (1) DE2445714A1 (fr)
FR (1) FR2246890B1 (fr)
GB (1) GB1451623A (fr)
IT (1) IT1022419B (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929682A1 (de) * 1979-07-04 1981-01-15 Bbc Brown Boveri & Cie Verfahren zum aetzen von silizium- substraten und substrat zur durchfuehrung des verfahrens
JPS589323A (ja) * 1981-07-10 1983-01-19 Nippon Telegr & Teleph Corp <Ntt> 微細レジストパタンの形成方法
US4560641A (en) * 1982-03-26 1985-12-24 Hitachi, Ltd. Method for forming fine multilayer resist patterns
JPS58219734A (ja) * 1982-06-14 1983-12-21 Matsushita Electric Ind Co Ltd 半導体装置の製造方法およびそれに用いる感光性材料
US4473676A (en) * 1982-06-14 1984-09-25 Eastman Kodak Company Polymer compositions having a low coefficient of friction
US4404276A (en) * 1982-06-14 1983-09-13 Eastman Kodak Company Polymer compositions containing crosslinked silicone polycarbinol and having a low coefficient of friction
USRE32514E (en) * 1982-06-14 1987-10-06 Eastman Kodak Company Polymer compositions having a low coefficient of friction
DE3334095A1 (de) * 1983-09-21 1985-04-11 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum aetzen tiefer graeben in siliziumscheiben mit glatter oberflaeche
US4702990A (en) * 1984-05-14 1987-10-27 Nippon Telegraph And Telephone Corporation Photosensitive resin composition and process for forming photo-resist pattern using the same
US4892617A (en) * 1984-08-22 1990-01-09 American Telephone & Telegraph Company, At&T Bell Laboratories Processes involving lithographic materials
US4665010A (en) * 1985-04-29 1987-05-12 International Business Machines Corporation Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer
JP2552648B2 (ja) * 1985-12-02 1996-11-13 東京応化工業 株式会社 ポジ型ホトレジストパタ−ンの安定化方法
US4732841A (en) * 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
US5057396A (en) * 1988-09-22 1991-10-15 Tosoh Corporation Photosensitive material having a silicon-containing polymer
EP0397130B1 (fr) * 1989-05-11 1995-04-19 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Dispositif médical ayant une surface hautement biocompatible et sa méthode de fabrication
US6465054B2 (en) * 1997-10-21 2002-10-15 Roche Diagnostics Gmbh Process for coating surfaces
TWI245774B (en) * 2001-03-01 2005-12-21 Shinetsu Chemical Co Silicon-containing polymer, resist composition and patterning process
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP4557497B2 (ja) * 2002-03-03 2010-10-06 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物
JP2004038142A (ja) 2002-03-03 2004-02-05 Shipley Co Llc ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物
AU2003287194A1 (en) * 2002-10-21 2004-05-13 Shipley Company L.L.C. Photoresists containing sulfonamide component
EP1422566A1 (fr) * 2002-11-20 2004-05-26 Shipley Company, L.L.C. Systèmes de photoréserves à couches multiples
JP2004206082A (ja) * 2002-11-20 2004-07-22 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
US20040229159A1 (en) * 2003-02-23 2004-11-18 Subbareddy Kanagasabapathy Fluorinated Si-polymers and photoresists comprising same
KR101112482B1 (ko) * 2003-03-03 2012-02-24 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Ｓｉ-폴리머 및 이를 포함하는 포토레지스트
US7713753B2 (en) * 2008-09-04 2010-05-11 Seagate Technology Llc Dual-level self-assembled patterning method and apparatus fabricated using the method
US8841399B2 (en) 2010-06-30 2014-09-23 3M Innovative Properties Company Curable composition comprising dual reactive silane functionality
US8968868B2 (en) 2010-06-30 2015-03-03 3M Innovative Properties Company Curable-on-demand composition comprising dual reactive silane functionality
EP2588550A1 (fr) 2010-06-30 2013-05-08 3M Innovative Properties Company Composition de revêtement de polysiloxane durcissable
CN104470983A (zh) 2011-12-29 2015-03-25 3M创新有限公司 可固化聚硅氧烷组合物
CN104080838B (zh) 2011-12-29 2016-08-17 3M创新有限公司 可按需固化的聚硅氧烷涂料组合物
CN105164184A (zh) 2011-12-29 2015-12-16 3M创新有限公司 可固化聚硅氧烷涂料组合物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3272670A (en) * 1965-08-27 1966-09-13 Stanford Research Inst Two-stable, high-resolution electronactuated resists
US3726710A (en) * 1970-09-02 1973-04-10 Union Carbide Corp Silicon paper release compositions
DE2207495A1 (de) * 1971-02-20 1972-08-24 Dainippon Printing Co Ltd Flachdruckplatten und Verfahren zu ihrer Herstellung
GB1316711A (en) * 1971-03-15 1973-05-16 Mullard Ltd Methods of producing films comprising siliceous material
US3877980A (en) * 1972-01-18 1975-04-15 Philips Corp Methods of producing phosphosilicate glass patterns
GB1409327A (en) * 1973-01-10 1975-10-08 Dow Corning Ltd Process for treating surfaces
US3915824A (en) * 1973-03-30 1975-10-28 Scm Corp Uv and laser curing of the polymerizable binder
US3873499A (en) * 1973-11-29 1975-03-25 Dow Corning Fast curing mercaptoalkyl vinyl siloxane resins

Also Published As

Publication number Publication date
US3969543A (en) 1976-07-13
JPS5062437A (fr) 1975-05-28
FR2246890A1 (fr) 1975-05-02
IT1022419B (it) 1978-03-20
GB1451623A (en) 1976-10-06
DE2445714A1 (de) 1975-04-10

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