IT1027470B - Procedimento per l assottigliamento di uno strato di materiale semicon duttore - Google Patents

Procedimento per l assottigliamento di uno strato di materiale semicon duttore

Info

Publication number
IT1027470B
IT1027470B IT67299/75A IT6729975A IT1027470B IT 1027470 B IT1027470 B IT 1027470B IT 67299/75 A IT67299/75 A IT 67299/75A IT 6729975 A IT6729975 A IT 6729975A IT 1027470 B IT1027470 B IT 1027470B
Authority
IT
Italy
Prior art keywords
thinning
procedure
layer
semicon ductor
ductor material
Prior art date
Application number
IT67299/75A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US440664A external-priority patent/US3890215A/en
Priority claimed from US440656A external-priority patent/US3898141A/en
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT1027470B publication Critical patent/IT1027470B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/617—Electrolytic etching of Group III-V materials
IT67299/75A 1974-02-08 1975-02-05 Procedimento per l assottigliamento di uno strato di materiale semicon duttore IT1027470B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US440664A US3890215A (en) 1974-02-08 1974-02-08 Electrochemical thinning of semiconductor devices
US440656A US3898141A (en) 1974-02-08 1974-02-08 Electrolytic oxidation and etching of III-V compound semiconductors

Publications (1)

Publication Number Publication Date
IT1027470B true IT1027470B (it) 1978-11-20

Family

ID=27032501

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67299/75A IT1027470B (it) 1974-02-08 1975-02-05 Procedimento per l assottigliamento di uno strato di materiale semicon duttore

Country Status (4)

Country Link
JP (1) JPS50115775A (it)
DE (1) DE2505277A1 (it)
FR (1) FR2260868A1 (it)
IT (1) IT1027470B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247373A (en) * 1978-06-20 1981-01-27 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor device
DE2906701A1 (de) * 1979-02-21 1980-09-04 Siemens Ag Iii-v-halbleiter-leistungs-mesfet mit verbesserter waermeableitung und verfahren zur herstellung eines solchen transistors
DE3805752A1 (de) * 1988-02-24 1989-08-31 Fraunhofer Ges Forschung Anisotropes aetzverfahren mit elektrochemischem aetzstop

Also Published As

Publication number Publication date
JPS50115775A (it) 1975-09-10
DE2505277A1 (de) 1975-08-14
FR2260868A1 (en) 1975-09-05

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