IT1004414B - Procedimento per preparare silicio oppure un altro materiale semicon duttore con elevato grado di purez za - Google Patents

Procedimento per preparare silicio oppure un altro materiale semicon duttore con elevato grado di purez za

Info

Publication number
IT1004414B
IT1004414B IT49666/74A IT4966674A IT1004414B IT 1004414 B IT1004414 B IT 1004414B IT 49666/74 A IT49666/74 A IT 49666/74A IT 4966674 A IT4966674 A IT 4966674A IT 1004414 B IT1004414 B IT 1004414B
Authority
IT
Italy
Prior art keywords
purez
procedure
another
high degree
preparing silicon
Prior art date
Application number
IT49666/74A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2315469A external-priority patent/DE2315469C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1004414B publication Critical patent/IT1004414B/it

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is ac
    • G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices
    • G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only
    • G05F1/45—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load
    • G05F1/455—Regulating voltage or current wherein the variable actually regulated by the final control device is ac using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load with phase control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
IT49666/74A 1973-03-28 1974-03-26 Procedimento per preparare silicio oppure un altro materiale semicon duttore con elevato grado di purez za IT1004414B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2315469A DE2315469C3 (de) 1973-03-28 1973-03-28 Verfahren und Vorrichtung zum Herstellen von hochreinem Halbleitermaterial

Publications (1)

Publication Number Publication Date
IT1004414B true IT1004414B (it) 1976-07-10

Family

ID=5876210

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49666/74A IT1004414B (it) 1973-03-28 1974-03-26 Procedimento per preparare silicio oppure un altro materiale semicon duttore con elevato grado di purez za

Country Status (4)

Country Link
US (1) US3941900A (it)
JP (1) JPS5839574B2 (it)
BE (1) BE806098A (it)
IT (1) IT1004414B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5320756A (en) * 1976-08-09 1978-02-25 Matsushita Electric Ind Co Ltd Oscillator device
DE2753567C3 (de) * 1977-12-01 1982-04-15 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen
DE2928456C2 (de) * 1979-07-13 1983-07-07 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von hochreinem Silicium
JPS60248006A (ja) * 1984-05-24 1985-12-07 Nec Corp 発振器
JPH0691367B2 (ja) * 1985-03-08 1994-11-14 株式会社東芝 電圧制御形発振器
JPH0521020Y2 (it) * 1985-12-05 1993-05-31
JPS62224181A (ja) * 1986-03-26 1987-10-02 Toshiba Corp 副搬送波処理回路
DE3674000D1 (de) * 1986-06-25 1990-10-11 Mania Gmbh Verfahren und vorrichtung zum elektrischen pruefen von leiterplatten.
JPS6348164U (it) * 1986-09-16 1988-04-01
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
TWI464292B (zh) * 2008-03-26 2014-12-11 Gtat Corp 塗覆金之多晶矽反應器系統和方法
RU2499081C2 (ru) * 2008-03-26 2013-11-20 ДжиТиЭйТи Корпорейшн Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы
JP5481886B2 (ja) * 2008-03-27 2014-04-23 三菱マテリアル株式会社 多結晶シリコン製造装置
DE102008002184A1 (de) * 2008-06-03 2009-12-10 Wacker Chemie Ag Vorrichtung zur Umformung elektrischer Energie zur konduktiven Erhitzung von Halbleitermaterial in Stabform
ES2331283B1 (es) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas.
DE212009000165U1 (de) * 2008-12-09 2012-02-10 Aeg Power Solutions Gmbh Vorrichtung zur Stromversorgung eines CVD-Prozesses bei der Siliziumabscheidung
DE202009003325U1 (de) 2009-03-11 2009-06-18 Aeg Power Solutions Gmbh Vorrichtung zum Zünden und zur Inbetriebnahme von Siliziumstäben
DE202010017531U1 (de) * 2010-05-17 2012-10-04 Centrotherm Sitec Gmbh Vorrichtung zum Anlegen einer Spannung an eine Vielzahl von Siliziumstäben in einem CVD-Reaktor
DE102011077970A1 (de) * 2011-06-22 2012-12-27 Wacker Chemie Ag Vorrichtung und Verfahren zur Temperaturbehandlung von korrosiven Gasen
KR101311739B1 (ko) * 2013-01-14 2013-10-14 주식회사 아이제이피에스 폴리실리콘 제조장치
EP2765698B1 (de) * 2013-02-06 2018-10-24 Siemens Aktiengesellschaft Anordnung zum Zünden von Dünnstäben aus elektrisch leitfähigem Material, insbesondere von Siliziumdünnstäben
JP6036946B2 (ja) * 2015-08-26 2016-11-30 住友電気工業株式会社 炭化珪素単結晶の製造方法および製造装置
PL3648553T3 (pl) * 2017-06-27 2021-09-13 Canon Anelva Corporation Urządzenie do obróbki plazmowej

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL218408A (it) * 1954-05-18 1900-01-01
DE1061593B (de) * 1956-06-25 1959-07-16 Siemens Ag Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke
NL123477C (it) * 1958-05-16
NL256255A (it) * 1959-11-02
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3686475A (en) * 1971-03-04 1972-08-22 Gen Motors Corp Control circuit for a liquid vaporizing tool

Also Published As

Publication number Publication date
US3941900A (en) 1976-03-02
JPS501977A (it) 1975-01-10
BE806098A (fr) 1974-02-01
JPS5839574B2 (ja) 1983-08-31

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