IT1040004B - Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore - Google Patents

Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore

Info

Publication number
IT1040004B
IT1040004B IT25689/75A IT2568975A IT1040004B IT 1040004 B IT1040004 B IT 1040004B IT 25689/75 A IT25689/75 A IT 25689/75A IT 2568975 A IT2568975 A IT 2568975A IT 1040004 B IT1040004 B IT 1040004B
Authority
IT
Italy
Prior art keywords
lathes
marginal
slab
creation
semiconductor material
Prior art date
Application number
IT25689/75A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1040004B publication Critical patent/IT1040004B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
IT25689/75A 1974-08-21 1975-07-23 Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore IT1040004B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49928874A 1974-08-21 1974-08-21

Publications (1)

Publication Number Publication Date
IT1040004B true IT1040004B (it) 1979-12-20

Family

ID=23984661

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25689/75A IT1040004B (it) 1974-08-21 1975-07-23 Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore

Country Status (7)

Country Link
JP (1) JPS5146076A (it)
BE (1) BE832633A (it)
CA (1) CA1038969A (it)
DE (1) DE2536108A1 (it)
FR (1) FR2282722A1 (it)
GB (1) GB1471116A (it)
IT (1) IT1040004B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607298A (nl) * 1976-07-02 1978-01-04 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
FR2410366A1 (fr) * 1977-11-29 1979-06-22 Radiotechnique Compelec Transistor de type mesa et procede de realisation de ce transistor
JPS5895553A (ja) * 1981-12-01 1983-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd 耐熱衝撃性の改良されたハニカム触媒の製造方法
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
JPH0777240B2 (ja) * 1989-01-20 1995-08-16 富士通株式会社 半導体装置の製造方法
JPH03129854A (ja) * 1989-10-16 1991-06-03 Toshiba Corp 半導体装置の製造方法
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Also Published As

Publication number Publication date
FR2282722A1 (fr) 1976-03-19
GB1471116A (en) 1977-04-21
JPS5146076A (en) 1976-04-20
CA1038969A (en) 1978-09-19
JPS5227033B2 (it) 1977-07-18
DE2536108A1 (de) 1976-03-11
BE832633A (fr) 1975-12-16

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