BE832633A - Profilage des bords de pastilles semi- conductrices - Google Patents

Profilage des bords de pastilles semi- conductrices

Info

Publication number
BE832633A
BE832633A BE159371A BE159371A BE832633A BE 832633 A BE832633 A BE 832633A BE 159371 A BE159371 A BE 159371A BE 159371 A BE159371 A BE 159371A BE 832633 A BE832633 A BE 832633A
Authority
BE
Belgium
Prior art keywords
profiling
semi
edges
conductive pellets
pellets
Prior art date
Application number
BE159371A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE832633A publication Critical patent/BE832633A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
BE159371A 1974-08-21 1975-08-21 Profilage des bords de pastilles semi- conductrices BE832633A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49928874A 1974-08-21 1974-08-21

Publications (1)

Publication Number Publication Date
BE832633A true BE832633A (fr) 1975-12-16

Family

ID=23984661

Family Applications (1)

Application Number Title Priority Date Filing Date
BE159371A BE832633A (fr) 1974-08-21 1975-08-21 Profilage des bords de pastilles semi- conductrices

Country Status (7)

Country Link
JP (1) JPS5146076A (xx)
BE (1) BE832633A (xx)
CA (1) CA1038969A (xx)
DE (1) DE2536108A1 (xx)
FR (1) FR2282722A1 (xx)
GB (1) GB1471116A (xx)
IT (1) IT1040004B (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607298A (nl) * 1976-07-02 1978-01-04 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
FR2410366A1 (fr) * 1977-11-29 1979-06-22 Radiotechnique Compelec Transistor de type mesa et procede de realisation de ce transistor
JPS5895553A (ja) * 1981-12-01 1983-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd 耐熱衝撃性の改良されたハニカム触媒の製造方法
DE3422051C2 (de) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
JPH0777240B2 (ja) * 1989-01-20 1995-08-16 富士通株式会社 半導体装置の製造方法
JPH03129854A (ja) * 1989-10-16 1991-06-03 Toshiba Corp 半導体装置の製造方法
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren

Also Published As

Publication number Publication date
CA1038969A (en) 1978-09-19
GB1471116A (en) 1977-04-21
IT1040004B (it) 1979-12-20
FR2282722A1 (fr) 1976-03-19
DE2536108A1 (de) 1976-03-11
JPS5227033B2 (xx) 1977-07-18
JPS5146076A (ja) 1976-04-20

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