GB1471116A - Edge contouring of semiconductor wafers - Google Patents

Edge contouring of semiconductor wafers

Info

Publication number
GB1471116A
GB1471116A GB3354775A GB3354775A GB1471116A GB 1471116 A GB1471116 A GB 1471116A GB 3354775 A GB3354775 A GB 3354775A GB 3354775 A GB3354775 A GB 3354775A GB 1471116 A GB1471116 A GB 1471116A
Authority
GB
United Kingdom
Prior art keywords
junction
convex portion
aug
semi
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3354775A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1471116A publication Critical patent/GB1471116A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)

Abstract

1471116 Semi-conductor devices RCA CORPORATION 12 Aug 1975 [21 Aug 1974] 33547/75 Heading H1K A mesa formed in a semi-conductor wafer 10 and having a PN junction 20, has a side surface having a concave portion 34c extending from its top surface and a convex portion, the convex portion at the point 38<SP>1</SP> of termination of the junction, making an angle of less than 90 degrees with the upper surface of the junction. The radius of curvature of the convex portion increases with distance from the point 38<SP>1</SP> towards the upper surface 22, Fig. 3. As shown, Fig. 5, a further concave portion is provided below portion 34a, 34b of the side surface. The side surface shown in Fig. 5 is obtained by rapidly etching with a chemical etchant the upper exposed edge 38 of an intersecting groove pattern 34 formed, e.g. by laser. As shown in Fig. 3, the width of the grooves 34 is less than the width of the intersecting gaps 24 in superimposed layers 26, 28 respectively of silicon dioxide and a photoresist material. Thickness and specific resistance of layers 12, 14 and 16 are disclosed.
GB3354775A 1974-08-21 1975-08-12 Edge contouring of semiconductor wafers Expired GB1471116A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49928874A 1974-08-21 1974-08-21

Publications (1)

Publication Number Publication Date
GB1471116A true GB1471116A (en) 1977-04-21

Family

ID=23984661

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3354775A Expired GB1471116A (en) 1974-08-21 1975-08-12 Edge contouring of semiconductor wafers

Country Status (7)

Country Link
JP (1) JPS5146076A (en)
BE (1) BE832633A (en)
CA (1) CA1038969A (en)
DE (1) DE2536108A1 (en)
FR (1) FR2282722A1 (en)
GB (1) GB1471116A (en)
IT (1) IT1040004B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
EP0766324A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Semiconductor device and method of fabrication

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607298A (en) * 1976-07-02 1978-01-04 Philips Nv PROCESS FOR MANUFACTURING A DEVICE AND DEVICE MANUFACTURED ACCORDING TO THE PROCESS.
FR2410366A1 (en) * 1977-11-29 1979-06-22 Radiotechnique Compelec MESA TYPE TRANSISTOR AND METHOD FOR MAKING THIS TRANSISTOR
JPS5895553A (en) * 1981-12-01 1983-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd Manufacture of honeycomb structure catalyst having improved thermal shock resistance
DE3422051C2 (en) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silicon semiconductor component with an edge contour produced by etching technology and a method for producing this component
JPH0777240B2 (en) * 1989-01-20 1995-08-16 富士通株式会社 Method for manufacturing semiconductor device
JPH03129854A (en) * 1989-10-16 1991-06-03 Toshiba Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
EP0766324A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Semiconductor device and method of fabrication
US5923053A (en) * 1995-09-29 1999-07-13 Siemens Aktiengesellschaft Light-emitting diode having a curved side surface for coupling out light
US6025251A (en) * 1995-09-29 2000-02-15 Siemens Aktiengesellschaft Method for producing a plurality of semiconductor components

Also Published As

Publication number Publication date
CA1038969A (en) 1978-09-19
IT1040004B (en) 1979-12-20
BE832633A (en) 1975-12-16
FR2282722A1 (en) 1976-03-19
DE2536108A1 (en) 1976-03-11
JPS5227033B2 (en) 1977-07-18
JPS5146076A (en) 1976-04-20

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee